Abstract: The invention is a mechanically or electro-mechanically driven phase shifter for radio frequencies. It is a device for phase shifting a signal propagating through a transmission line by moving a conductive construct between an active line and a ground plane of the transmission line. The conductive construct capacitively couples with either the active line and/or the ground plane, forming a capacitive shunt that reflects a significant part of the signal. The remaining portion of the signal is reflected at a terminated end of the transmission line, resulting in substantially no signal loss. The reflectance of the conductive constructs is determined by its capacitance to active line and ground, by its length, and by the step in the field-distribution at the interface between air-suspended and sledge-suspended sections.

Abstract: The present invention provides a switched-line phase shifter (300) for creating a differential phase shift between switched transmission paths (302, 304). A switched-line phase shifter (300) incorporates Schiffman sections (306, 308) of lengths which are non-integer multiples of quarter-wavelength. The lengths of the Schiffman sections (306, 308) are chosen such that no isolation points, which result from frequencies at which the effective electrical length of one of the transmission paths (302, 304) is an integer multiple of &lgr;/2, occur over the operating frequency range of the phase shifter (300). The present invention also provides a space-efficient implementation of a switched-line phase shifter (600) which utilizes switches (640, 642, 644) between Schiffman subsections (610, 630) to alternately combine and isolate the Schiffman subsections (610, 630) thereby alternately creating effective Schiffman sections of greater and lesser length respectively.

Abstract: A meander line includes a electrically conductive plate, a plurality of transmission line sections supported with respect to the conductive plate, wherein the plurality of sections includes a first section located relatively closer and parallel to the conductive plate to have a relatively lower characteristic impedance with the conductive plate and a second section located parallel to and at a relatively greater distance from the conductive plate than the first section to have a relatively higher characteristic impedance with the conductive plate, and connector means for interconnecting the first and second sections and maintaining an impedance mismatch therebetween.

Abstract: A phased array antenna phase shifter having one or more serially connected stages, the stages allowing a transmission signal to pass through to a radiating element. Each of the stages have three or more delay lines for imparting a different respective delay on the transmission signal and a network of switches to select which of the delay lines within the stage will carry the transmission signal. As the signal is passed through each of the stages, the signal will experience the cumulative delays from the stages of the phase shifter. The delay lines in each stage comprise delay lines of different respective lengths, a delay is imparted on the transmission signal as it passed along the length of the selected delay line. The network of switches comprises micro electromechanical systems (MEMS) switches.

Abstract: A non-mechanical electrically adjustable delay device which does not suffer from interruptions in impedance inherent in multiple-tap delay lines. The wide band electrical delay line is capable of delaying a wide band of signals without significant distortion, e.g., up into the microwave range, and allows continuous transmission of a signal between the input port and the output port. The exemplary wide band electrical delay line comprises two transmission lines, preferably parallel to one another, and having different propagation velocities. A plurality of electrical cross connect circuits are connected between the two transmission lines. The electrical cross connect circuits are spaced along the lengths of the two transmission lines, e.g., preferably to form evenly spaced distances therebetween. The total delay through the wide band electrical delay line is adjusted by selectively activating an appropriate one of the plurality of cross connect circuits between the two transmission lines.

Abstract: A broad band phase shifter of the present invention can be used in a microstrip conductor and includes a power divider disposed along a microstrip conductor. The power divider has first and second outputs. A reference transmission line is disposed on the microstrip conductor and connected to the first output of the power divider. A phase shift filter device is disposed on the microstrip conductor and connected to the second output of the power divider. The phase shift filter device comprises a 180 degree phase shift coupled line structure formed of a first substantially linear 90 degree phase shift parallel line section, and a second substantially linear 90 degree phase shift parallel line section coupled to the first parallel. line section. The first and second 90 degree phase shift parallel line sections have parallel lines that are spaced about five mils apart. The first and second 90 degree phase shift parallel line sections also have parallel lines that are offset to each other.

Abstract: A microwave phase shifter includes bias regulating circuits generating a gate bias of an FET switch element by processing a control voltage generated by the power-source voltage of an external system and applied to the FET switch element in a transformation process. The off-level of the gate bias is set near the pinch-off voltage. As a result, even when the control voltage of the FET switch element which switches the phase shift amount is restricted due to the circumstance of the system power-source, the off-level of the FET element can be set at a potential near the pinch-off voltage and can suppress delay in the rise of the phase shifter output because the off-level exceeds the pinch-off voltage.

Abstract: In a semiconductor phase shifter, a high-pass signal path and a low-pass signal path are connected in parallel between an input terminal and an output terminal. The high-pass signal path in constructed by first and second transmission lines connected to the input and output terminals and having an effective length of &lgr;/4, where &lgr; is a wavelength of propagating signals, at least one first field effect transistor connected between the first and second transmission lines, and at least two third transmission lines each connected of the first field effect transistor and to a ground terminal. The low-pass signal path is constructed by fourth and fifth transmission lines connected to the input and output terminals and having an effective length of &lgr;/4, at least one sixth transmission line connected between the fourth and fifth transmission lines, and at least two second field effect transistors each connected to the sixth transmission line and to the ground terminal.

Abstract: A phase modulator for communication applications is constructed in so as to be easily implemented by way of MMIC technology. A phase modulator section is followed by a saturated amplifier section so as to provide substantially constant amplitude for all bits or states. The phase modulator section is a bi-phase shift keyed or quadrature-phase shift keyed modulator constructed in accordance with the present invention for discretely varying the phase of an input carrier signal between two or four possible phase states, respectively. The bi-phase shift keyed modulator includes at least a first pair of first and second transmission line segments and a pair of switches which each serve as a single-pole double-throw switch for operatively connecting one of the pair of transmission line segments between an input associated with the first switch, and an output associated with the second switch.

Abstract: A phase shifting microwave circuit is implemented on a gallium-arsenide-based monolithic microwave integrated circuit chip (MMIC) having time-delay means and digital phase shift means and operable in a first mode to time-delay an input RF microwave signal in response to an at least one control signal to cause a corresponding shift in phase of the signal at an output of the circuit, and operable in a second mode to time-delay and phase delay the input RF microwave signal in response to a plurality of control signals to cause a shift in phase of the signal at the output of the circuit corresponding to the sum of the phase shifts caused by each of the individual time-delays and digital phase delay.

Abstract: A phase shifter/modulator which provides linear phase control of a microwave continuous wave carrier signal. Linear phase shift range in excess of 360 degrees is provided as a result of linear variation in control voltage. A reference signal, at a subharmonic of the output carrier signal frequency, is injected into a highly linear fractional range reflection type phase shifter. This fractional phase modulated signal is input to a field effect transistor (FET) based frequency/phase multiplier. The frequency/phase multiplier translates the subharmonic reference signal to the desired output carrier frequency with the full 360 degree phase shift range imposed on the output carrier signal.

Abstract: The stripline-slotline digital phase shifter is located between a ground plane associated with a patch antenna and another ground plane associated with the other patch antenna, or other output circuits. It is comprised of a section of stripline adjacent to a slot in ground plane associated with the receiving patch antenna which transitions an input electromagnetic signal to a plurality of oval slotlines, called bit circuits, of varying lengths which form a delay circuit by shifting the phase of the input electromagnetic signal. The varying lengths of slotline are switched into and out of the circuit to provide a predetermined amount of delay and the phase adjusted electromagnetic signal is transitioned to portion of stripline adjacent to a slot associated with the transmission patch antenna or other output circuits.

Abstract: A phase shifting electric circuit (1) comprises units for conveying an input signal (V1) from a main signal input (12) to a main signal output (11). The circuit (1) has a first signal path (18), from the input (12) to the output (11), along which a connectable and disconnectable first active unit (3) is arranged and also a second signal path (19) along which a connectable and disconnectable second active unit (4) and a 180 degrees phase shifting unit (2) are arranged. By a method a selection is made which of the active units (3,4) is to be in a connected condition after which control signals (U1,U2) to the units (3,4) sets them in a connected and disconnected condition respectively with the outcome of a transmission from the output (11), depending on the selection, either a non-phase shifted signal (V1') or a 180 degrees phase shifted signal (V2'). Depending on the function of the active units (3,4) the signal (V1',V2') can also be affected in other respects than its relative phase.

Abstract: An analog phase modulator is provided for linearly phase modulating a high carrier frequency input signal in proportion to an applied bias signal. A first variable reactance network, including at least a pair of variable reactance devices separated by an approximately 1/4 wave length transmission line segment, is capacitively coupled to an in-phase port of a power divider network, and a second identical variable reactance network is capacitively coupled to a quadrature phase shifted port of the power divider network. A bias source signal is applied to each of the first and second variable reactance networks through identical bias filters, each including a high impedance transmission line segment serially connected between the bias source and the variable reactance network, and a low impedance transmission line segment shunt segment at the juncture of the high impedance transmission line segment and the bias source input port.

Abstract: A split power control circuit includes a solid state switch and a circuit or circuit element, such as a relatively large resistance or reactance connected between an RF signal line and ground. In order to provide relatively more precise control and thus relatively finer adjustment of the RF signal line, the RF signal line is split into a plurality of branches, with the switched control circuit or element connected to one or more of the branches. In another embodiment of the present invention, a solid state switch and serially connected circuit or circuit element, such as a resistance or reactance, are connected between an RF signal line and ground. The gate terminal of the solid state switch is capacitively coupled to the switch terminal (i.e. drain or source) connected to the RF signal line, forcing the gate bias element to become a fixed, rather than switched, load, thereby minimizing errors due to the gate biasing element and enabling tuning reactances to be used to compensate for such gate loads.

Abstract: A load line type phase displacement unit which is capable of reducing the time which is required for designing the system and increasing the system fabrication efficiency by simply adjusting a phase difference of an input signal by adjusting the length of a stub after the impedances of a main line and a stub are made identical with a characteristic impedance. The unit a main line unit having a main line having a characteristic impedance Z.sub.0 and an identical impedance Z.sub.c and a plurality of stubs having an impedance Z.sub.c of the main line and an identical impedance and being capable of changing a phase difference of an input signal, and a sub-line unit having a stub having an impedance which is identical with the characteristic impedance Z.sub.0 of the main line and a sub-line which is connected in parallel with the stub for compensating for error information based on the malfunction of the main line unit.

Abstract: An electrically controllable impedance matching device for matching an impedance of a signal output from a signal generator in an RF (Radio Frequency) amplifier. The impedance matching device includes a 3-dB directional coupler having a coupling terminal, a through terminal, an isolation terminal being an output terminal, and an input terminal connected to the signal generator; a first phase shifter connected to the coupling terminal, for shifting a phase of the signal according to a control signal; a second phase shifter connected to the through terminal, for shifting the phase of the signal according to the control signal; and controller for generating the control signal.

Abstract: A phase shifter circuit shifts the phase of a voltage varying RF signal at high RF power levels by using a diode arrangement of back to back diode sets connected in series to reduce the change in capacitive reactance of the diode arrangement. The diode arrangement is connected to a phase adjustment port of a phase shifting device which shifts the phase of the RF signal according to the capacitive reactance level at the phase adjustment port. A control circuit for each back to back diode set can be used to provide independent adjustment of each diode set to balance capacitive reactance responses between the diode sets to further reduce the change in capacitive reactance. In certain embodiments, the phase shifter circuit uses a ninely (90) degree hybrid coupler with two phase adjustment ports, a zero (0) degree port and a -90 degree port.

Abstract: A split power control circuit includes a solid state switch and a circuit or circuit element, such as a relatively large resistance or reactance connected between an RF signal line and ground. In order to provide relatively more precise control and thus relatively finer adjustment of the RF signal line, the RF signal line is split into a plurality of branches, with the switched control circuit or element connected to one or more of the branches. In another embodiment of the present invention, a solid state switch and serially connected circuit or circuit element, such as a resistance or reactance, are connected between an RF signal line and ground. The gate terminal of the solid state switch is capacitively coupled to the switch terminal (i.e. drain or source) connected to the RF signal line, forcing the gate bias element to become a fixed, rather than switched, load, thereby minimizing errors due to the gate biasing element and enabling tuning reactances to be used to compensate for such gate loads.

Abstract: A method and apparatus for accomplishing a 90.degree. relative phase shift employing a high characteristic impedance outer leg of length .lambda./2 and a low characteristic impedance through leg of length .lambda./4. The high characteristic impedance outer leg is directly connected to the input and the output. The low characteristic impedance through leg is connected to the input and output with first and second diode paths. When the first and second diode paths are in the on state, the low characteristic impedance through leg receives a majority of the input power. Because of the impedance disparity between the high characteristic impedance outer leg and low characteristic impedance through leg, only a small amount of power is routed through the high characteristic impedance outer leg when the first and second diode paths are in the on state and the combined signal phase is not substantially effected.

Abstract: A phase shifter transmission line includes a semiconductor layer 20; a first conductor region 42 on the semiconductor layer 20; a first doped region 24 and 30 in the semiconductor layer adjacent the first conductor region; and a variable bias voltage coupled to the first conductor region 42 for varying an effective dielectric constant in the transmission line.

Abstract: A phase shifter includes a transmission line and a plurality of varactor diodes connected in parallel to the transmission line. The varactor diodes have a high enough density that they uniformly load the transmission line. By controlling the reverse biasing of the varactor diodes, the phase shift produced by the phase shifter can be controlled.

Abstract: A high-frequency circuit device includes a varactor diode having a first terminal and a second terminal, a first strip line connected to the first terminal of the varactor diode, a voltage being applied to the varactor diode via the first terminal, a second strip line having a first end connected to the second terminal of the varactor diode, and a second open end. The second strip line has a length so as to obtain an equivalent strip line length taking into capacitances of the varactor diode and the second strip line. The equivalent strip line length determines a characteristic of the high-frequency circuit device.

Abstract: A phase shifter, which can switch between a phase delay circuit and a phase leading circuit consisting of inductors and capacitors, is constituted by disposing FETs having inductors or capacitors arranged in parallel with the source and drain electrodes of each FET connected and controlling a bias voltage to be applied to the gate electrodes of the FETs to switch between the on and off conditions of the FETs. Thus, a phase shifter obtained has a small frequency characteristic.

Abstract: There is provided a small size phase shifter which can shift a phase by 180 degrees wherein the accuracy of preset phase is less dependent on frequency. The phase shifter comprises first to fourth switches provided between a first line pair and a second line pair. By turning the first and second switches ON and the third and fourth switches OFF, a signal inputted to the first line pair is outputted from the second line pair in phase. By turning the first and second switches OFF and the third and fourth switches ON, a signal inputted to the first line pair is outputted from the second line pair out of phase. A small-size phase shifter which has the accuracy of preset phase less dependent on frequency can then be obtained.

Abstract: A binary phase shift keyed (BPSK) modulator (200) used for digital phase modulation is shown. Phase shift is achieved by electrically switching an RF input signal (201) through either a direct signal path (203) or through a half wave transmission signal path (205) to shift its phase by 180 degrees. Both the data signal (211) and its complement (213) are used to turn on one of PIN diodes (207, 209) while simultaneously turning off the other diode with reverse bias. This technique allows for obtaining maximum diode isolation. The BPSK modulator (200) has the advantages of very low insertion loss, dc coupling for low frequency modulation components and high performance with minimum parts.

Abstract: The microwave impedance across an aperture in a conductive shield member of a transmission structure is varied as a microwave signal transits the aperture. The impedance is changed by positioning a variable impedance device across the aperture. A slit divides the shield member into two portions to facilitate the application of a modulating signal (56) across the device.

Abstract: A multi-function, balanced phase shifter and switch having a particular application as a balanced switched low-noise amplifier. The switch includes a hybrid input coupler that couples a first input signal at a first input port and a second input signal at a second input port into a first path and a second path of the switch. Each of the first path and the second path include at least one amplifier and a phase shifter. The phase shifters include a hybrid coupler and two switching devices that are simultaneously switched on or off by a single control signal. Output from the two paths are applied to an output hybrid coupler that couples the output from the two paths into first and second output ports of the switch. By controlling the two control signals applied to the phase shifters to selectively switch the switching devices on and off, signals at the input ports can be selectively amplified and switched to the output ports in a balanced, low-noise manner.

Abstract: A phase shifter having a single or monolithic ferroelectric material and a lurality of ferroelectric transmission lines formed thereon, each having a different effective physical length and associated delay or phase shift. The plurality of different lengths of ferroelectric transmission lines has a voltage source associated therewith for applying a predetermined bias voltage, resulting in a change in permitivity in the ferroelectric substrate material. The different lengths of ferroelectric transmission line formed on the single substrate have a predetermined relationship between their effective physical linear lengths. By selectively activating the different lengths of ferroelectric transmission line by applying a bias voltage in different combinations, a desired or predetermined phase shift is obtained. The single or monolithic ferroelectric substrate used greatly reduces the overall length of the ferroelectric phase shifter.

Abstract: A phase shifter includes first and second single pole double throw switches, a low-pass filter, and a high-pass filter. The first switch has an input terminal and first and second output terminals, and the second switch has first and second input terminals and an output terminal. The low-pass filter is interposed between the first output terminal of the first switch and the first input terminal of the second switch and includes FETs as capacitors. The high-pass filter is interposed between the second output terminal of the first switch and the second input terminal of the second switch and includes a plurality of FETs as capacitors. The input terminal of first switch and the output terminal of the second switch are an input terminal and an output terminal of the phase shifter, respectively. Each of the high-pass filter and the low-pass filter produces two different phase quantities by the on-off switching of the FETs. Therefore, four different phase quantities are obtained in the phase shifter, i.e.

Abstract: A switched line phase shifter includes at least three transmission lines having different electrical lengths disposed between an input terminal and an output terminal and connectable in parallel to each other, at least three input side FET switches for connecting and disconnecting the input terminal and the input ends of the transmission lines, and at least three output side FET switches for connecting and disconnecting the output terminal and the output ends of the transmission lines. As many signal transmission paths as transmission lines are produced between the input terminal and the output terminal by controlling the input side and the output side FET switches. When one of the signal transmission paths is selected as a reference and a signal is transmitted through the remaining at least two signal transmission paths, at least two different phase shift quantities are obtained in the phase shifter.

Abstract: A low current vector modulator for continuously varying the amplitude and polarity of an RF signal includes first and second hybrid couplers electrically connected at their input ports to an RF source. The characteristic impedance of the hybrid couplers is twice the impedance of the RF source. First and second PIN diodes are electrically coupled to 0.degree. and 90.degree. phase ports of the first hybrid coupler, respectively, and third and fourth PIN diodes are electrically coupled to 0.degree. and 90.degree. phase ports of the second hybrid coupler, respectively. The first and second PIN diodes and the third and fourth PIN diodes also are electrically connected respectively to first and second biasing sources. Varying the biasing provided by the first and second biasing sources varies the amplitude and phase of first and second output signals generated by the first and second hybrid couplers.

Abstract: A switched line type 90.degree. phase shifter includes two single pole double throw switches, a reference transmission line having an electrical length of .alpha. connected between output terminals of the first and the second single pole double throw switches, a phase difference producing transmission line having an electrical length of (90.degree.+.alpha.) at a usage frequency, connected between other output terminals of the first and the second single pole double throw switches, and a phase inverting circuit switchablely connected for serial connection to and between two parts of the reference transmission line, which two parts produce the entirety of the reference transmission line, the one terminal of the first single pole double throw switch is an input terminal of the entire terminal and one terminal of the second single pole double throw switch is an output terminal.

Abstract: A loaded line phase shifter includes a semiconductor substrate; a main transmission line one-quarter wavelength long disposed on the semiconductor substrate; loaded lines connected to opposite ends of the main line; first and second FETs with drain electrodes connected to the other ends of the loaded lines and grounded source electrodes; and a resonant circuit including a third FET and an inductor connected between the drain electrodes of said first and second FETs. A desired phase shift quantity of the phase shifter is determined by the characteristic impedance of the main line, the reactance components of the loaded lines, and the off-capacitances of the FETs. When the resonant circuit is closed in this structure, the susceptance of the loaded lines and the first and second FETs is equal to zero, resulting in a phase shift quantity equivalent to half of the phase shift quantity obtained when the resonant circuit is opened.

Abstract: A reflection phase shifter includes a 3 dB directional coupler having opposite first and second ends, a reflection circuit connected between the first and second ends of the 3 dB directional coupler, a first resonant circuit connected between a node connecting the first end of the 3 dB directional coupler and the reflection circuit and ground, and a second resonant circuit connected between a node connecting the second end of the 3 dB directional coupler and the reflection circuit and ground. Each resonant circuit comprises an FET and an inductor connected between source and drain electrodes of the FET. In this reflection phase shifter, when the resonant circuits are open, the first and second ends of the 3 dB directional coupler are connected to the reflection circuit. On other hand, when the resonant circuits are short-circuited, the first and second ends of the 3 dB directional coupler are grounded. As a result, three different phases, i.e.

Abstract: The use of one or more multi-gate (e.g., dual-gate) FETs are employed in an RF or microwave delay line. The carrier drift velocity in each multi-gate FET is controlled in accordance with the variable magnitude of a delay-control voltage applied between its drain and source, thereby controlling the time delay experienced by an RF or microwave signal traveling between spaced first and second gates of a multi-gate FET. The gates of a plurality of multi-gate FETs may be serially-coupled through amplifying circuits to produce a delay chain in which the total delay is the sum of the delays of all the multi-gate FETs in the chain. A single delay-control voltage, which can be continuously variable, may be used to control the total delay provided by all multi-gate FETs in the chain. Alternatively, a separate delay-control voltage, which can be independently continuously variable, may be used for independently controlling the delay provided by each individual multi-gate FET in the chain.

Abstract: A nonlinear impedance transformer comprising a plurality of scaled L-C sections. The first section has its inductance and capacitance values selected to establish a characteristic impedance approximately equal to the output impedance of the local oscillator. The last section has its inductance and capacitance values selected to establish an output impedance which substantially matches the input impedance of whatever device to which the nonlinear impedance transformer is coupled. The impedance of each section is scaled logarithmically between the values of the input and output impedances. An FET driver can be integrated on the same substrate as integrated versions of the nonlinear impedance transformer. In such a case, the input impedance of the first section is set to the output impedance of the FET, i.e., about 10 ohms.

Abstract: A microwave phase shifter has a plurality of sequentially arranged, independently-actuatable sectiions, the total phase shift is the sum of all of the sections. The phase shifter has a common substrate, supporting several switching elements, with at least one switching element being assigned to each phase section; the switching elements are fastened to the common substrate with the element connections are all substantially in a first plane above the substrate. A first layer of a dielectric material is affixed adjacent to the first plane. Phase shift elements, such as microstriplines of a known length or inductive patterns of conductor, imparting the desired section phase shift, are fabricated upon a surface of the first dielectric layer furthest from the substrate, and are interconnected to and from the sections, or onto or off of the phase shifter at this level.

Abstract: An improved 180.degree. phase shifter bit that uses embedded switches to selectively connect the RF input and RF output to a loosely coupled transmission line segment and a pi section of transmission line. A hybrid coupler is selected having characteristic impedance of less than 50 ohms and having coupling of less than -3 db. The result of this coupling choice is extremely low insertion loss. The resultant impedance mismatch is compensated for by providing oversized field effect transistors that allow RF signal in both the grounded coupler and the pi section of transmission lines that are 180.degree. out of phase. The RF signal present in both the coupler and pi section of the transmission line results in a cancellation effect allowing recovery of the input/output impedance over an approximately one octave bandwidth.

Abstract: The invention relates to a switchable bidirectional phase shift network exhibiting a desired differential insertion phase suitable for use as a phase bit in a multi-bit phase shifter. The design is economical in its use of components--six field effect transistors, three inductors and no capacitors, and provides in one switching state a band pass network of low insertion phase and in the other switching state a low pass network of high insertion phase. The rate of change of insertion phase over a range of operating frequencies is substantially equal for the two states.

Abstract: An analog variable phase shifter comprises a phase shift circuit and associated active inlet and outlet matching circuits. The phase shift circuit includes a transistor with negative feedback, and the inlet and outlet matching circuits are of the type used for matching a wideband microwave signal amplifier over the entire range of frequency variation in the microwave signals applied to the amplifier.

Abstract: To compensate for nonlinear distortions in analog optical communication transmission systems, caused by laser chirps and the chromatic dispersion of the optical fiber, an equalizer in the form of an LC component is known, whose capacitance is formed by a variable capacitance diode. If this equalizer is to be adjusted for considerable signal distortions (long transmission path length), it must operate at great capacitance, which reduces its bandwidth. In order to be able to equalize large bandwidth signals (e.g. 600 MHz) containing considerable distortions, the invention indicates an LC chain circuit with LC components of the known type, as the equalizer. Further developments of this solution concern the appropriate polarizing of the variable capacitance diode and maintaining the frequency response constant, when adjusting the equalization.

Abstract: In a reciprocal microwave phase shifter of microstrip technology, a Ferrite substrate carries, on one side, a ground plane (PM) and, on the other, a microstrip line (LM). The lateral branches (CG2 and CD2) cooperating with a base (CC) to define a magnetic circuit come into direct contact with the Ferrite substrate (SF), be being, for example, equipped with a recess (ED2) in line with the passage of the microstrip line (LM).

Abstract: A digitally controlled distributed phase shifter is comprised of N phase shifters. Digital control is achieved by using N binary length-weighted electrodes located on the top surface of a waveguide. A control terminal is attached to each electrode thereby allowing the application of a control signal. The control signal is either one or two discrete bias voltages. The application of the discrete bias voltages changes the modal index of a portion of the waveguide that corresponds to a length of the electrode to which the bias voltage is applied, thereby causing the phase to change through the underlying portion of the waveguide. The digitally controlled distributed phase shift network has a total phase shift comprised of the sum of the individual phase shifters.

Abstract: A phase shifting circuit (10) which is especially suitable for use as a 180.degree. phase bit for an antenna element in a phased radar antenna array includes a first transmission line (16) connected between first and second diodes (22,24), which are connected to input and output terminals (12,14) respectively. Second and third transmission lines (18,20) are connected in series with each other between the input and output terminals (12,14). A third diode (26) is connected between the junction (28) of the second and third transmission lines (18,20) and ground. The first transmission line (16) is less than one-quarter wavelength long at the operating frequency of the circuit (10), whereas the second and third transmission lines (18,20) are each approximately three-eighths wavelength long. Forward biasing the diodes (22,24,26) causes substantially all of the signal to propagate from the input terminal (12) to the output terminal (14) through the first transmission line (16), producing minimum phase shift.

Abstract: A reflection-type phase shifter employs an artificial delay line which is constructed of high impedance transmission line sections for the series inductive elements in the transmission line. Each junction between inductances in the transmission line is associated with a separate FET pair. The FET pair includes a first FET having the source to drain path coupled between the junction and a point of reference potential. The gate electrode of the first FET is coupled via the source to drain path of a second FET to the point of reference potential. The gate electrode of the second FET is coupled to one terminal of a resistor which is of a larger value compared to the ON resistance of the FET. This resistor has another terminal coupled to a control voltage source.

Abstract: A phased array waveguide antenna having a plurality of longitudinally extending parallel waveguides arranged in rows and columns, and electrically controlled phase shifter strips disposed in longitudinally extending slots centrally located in respective columns of waveguides. The electrically controlled phase shifter strips include conductive patches that are selectively conductively connected together by microwave diodes to provide for variable susceptances.

Abstract: A broadband phase shifter and vector modulator includes two artificial transmission lines interconnected by FETs to selectively produce and sum incremental phase shifts of an input signal. A number of low pass filter sections are connected in series to form the first of the two artificial transmission lines and a number of high pass filter sections are connected in series to form the second artificial transmission line. Use of low pass and high pass filters equalizes transit times of each phasor through the phase shifter so as to maintain the proper phase relationship between the phasors over a broad bandwidth. Each of the two artificial transmission lines are coupled to a transistor circuit connecting corresponding low and high pass filter sections. The phase shifter operates by selectively summing the output variable-amplitude phase-shifted signals generated within the transmission lines to produce an output signal having a phase shift between 0.degree. and 360.degree..

Abstract: A digital phase shift apparatus having a pair of single gate FETs which are connected in a common source configuration. Transmission line segments which respectively connect the sources and drains of the FET pair, provides a phase shift to an applied RF signal. The operating FET provides signal gain as well as switch the signal path length.

Abstract: The present invention comprises a novel semiconductor device which further comprises a nonlinear transmission-line structure. The semiconductor device is that of a very long narrow voltage-dependent capacitor, such as a semiconductor diode or MOS capacitor, where the anode and cathode electrodes comprise the conductors of a transmission line and the depletion region comprises the dielectric of the transmission line. An input signal is applied at one end of the long, narrow structure. Such signal application results in the launch of a traveling wave traveling along the transmission-line structure. At the far end of the transmission-line structure, the signal is coupled out and applied to a load. The temporal and spatial modulation of the depletion capacitance of the semiconductor device as the traveling wave travels along the transmission-line structure results in temporal compression of the input signal.