Abstract: A self terminating supported printed circuit strain gauge structure has a printed circuit including at least one strain gauge, interconnecting circuitry interconnecting the strain gauge to a connector circuit arrangement of a connector for connecting the circuit to a PC board. The entire circuit including the strain gauge, the interconnecting circuitry and the connector arrangement is formed on a single contiguous flexible dielectric substrate. The interconnecting circuitry and the connector elements are formed of a highly conductive material at least partially overplated onto the strain gauge printed circuit. A resilient support layer is laminated to the surface of the base substrate opposite the circuit to form a spring support structure for reinforcing and supporting the strain gauge circuit.

Abstract: An electrical circuit such as a Wheatstone bridge has a conductive strip extending between a current input terminal and a current output terminal and includes two resistors having a connecting part therebetween, a conductive segment extending between the connecting part and a measuring terminal, the connecting part being formed as a wider portion of the conductive strip in the direction of the conductive segment, the conductive segment having an adjusting portion between the connecting part and the measuring terminal.

Abstract: A load cell utilizable in a weighing apparatus. The load cell is fabricated by forming a strain gauge pattern (4) of a copper-nickel alloy on a surface of a strain inducing element (1) by the use of a sputtering technique and subsequently heat-treating the strain gauge pattern under an oxygen-free atmosphere, wherein the weight ratio of copper and nickel is chosen to be of a value effective to permit the temperature dependent coefficient of resistance of the strain gauge pattern (4), which undergoes shrinkage and expansion together with the strain inducing element (1), to be substantially zero. In this way, the load cell can be obtained which is not affected by a change in temperature and which gives a high measurement precision.

Abstract: A semiconductor accelerometer comprising a semiconductor base member and an acceleration response member having a semiconductor beam integrally extending from the base member and a semiconductor weight integrally formed at a tip end of the beam so as to deflect the semiconductor beam when the weight is subjected to acceleration. At least one gauge diffusion resistor is formed in the semiconductor beam. The at least one gauge diffusion resistor includes a contact diffusion region which is formed at each end of the at least one gauge diffusion resistor and which has a diffusion concentration higher than that of the at least one gauge diffusion resistor. The contact diffusion region formed at each end of the at least one gauge diffusion resistor is connected to a wiring conductor.

Abstract: This is to introduce a strain sensor of high quality and excellent durability. This strain sensor is composed of a basic metal body, a crystallized glass layer formed over the surface of the basic metal body, and a resistance element that changes its resistance value by strain changes and is built on the glass layer surface. By this structure, where the crystallized glass layer fired at a high temperature is employed, both of the composition, the basic metal body and the glass layer, are fused with each other at the boundary plane, making their adhesion very strong. No peeling between the basic metal body and the glass layer will take place even under the severe environmental conditions such as high temperature and heavy load.

Abstract: A strain gage includes four gages that constitute a bridge circuit, and at least one resistance device which is used to adjust the offset voltage of the bridge circuit formed by the four gages. The resistance device is disposed on the strain gage between one of the gages making up the bridge circuit and a terminal thereof. Finally, each resistance device disposed on the strain gage has a series of resisting elements which vary in size and which are connected in parallel fashion.

Abstract: An improved wind tunnel six component balance having an outer shell assembly that receives a tubular inner rod and an axial member that is received within the interior of the tubular inner rod. The forward and aft ends of the outer shell assembly are connected to the inner rod. The loads imposed on the forward and aft ends of the outer shell assembly are transferred to the inner rod and into the tunnel support system. The central annular section of the outer shell assembly is connected to the axial adapters (four each and into the central disk of the axial member. The principal areas of the axial element are the central disk member, the flexures (two sets forward and two sets aft), the forward and aft gauged sections, and the forward and aft disk members. Normal force, side force, and rolling moment are carried by the outer forward webs of the outer shell assembly. The axial member will transfer the majority of the axial force then the forward and aft outer shell webs.

Abstract: A load cell includes a deformable member having a chamber therein extending parallel to the direction of force. A plate on the deformable member extends transversely to the direction of force and to the axis of the chamber. The plate is welded to the deformable member such that it covers the chamber. The plate and welding carry the structural loads of the deformable member. Strain gauges are positioned on the interior sides of the chamber.

Abstract: A piezoresistive device, in which separation grooves having a cross section defined by four (111) planes and including side walls of a silicon oxide film are formed in a surface area of a semiconductor substrate having a surface of (100) plane, and at least one piezoresistor having an inversed triangular cross section defined by one (100) plane and two (111) planes is formed in the surface area of the semiconductor substrate and is surrounded by the separation grooves for separating the piezoresistor from the semiconductor substrate.

Abstract: A strain gage transducer system, such as a load cell based weighing system, is protected against moisture related errors by an electrically conducting guard circuit for terminals and other parts subject to wet or humid conditions. The guard circuit is connected to an electrical potential close to a potential of signal terminals in a strain gage bridge, for instance to a center tap in a power supply for the strain gage bridge.

Abstract: The pressure sensor is formed of semiconductor material which is formed on insulating support, i.e., as a semiconductor-on-silicon. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.

Abstract: A strain gauge primarily designed for dynamic measurements and requiring very little force to produce a change in length. The strain gauge is alternately concave and convex in shape, such as a sinusoidal curve with nodes of low resistance on the convex portions and strain gauges of high resistance on the concave portions. The gauge is unbonded and can be stretched with very little force. The strain gauge is utilized in an instrument to monitor infant respiration and detect episodes of apnea.

Abstract: A low level strain gage transducer including housing which supports a strain member having a fixed end member and a free end member in the form of a cup, the free end member supported by a folded arm arrangement including one or more arms which permits the element being monitored for strain forces to pivot with respect to the cup so as to to accommodate any mis-alignment forces applied to the cup that would otherwise generate bending forces resulting in erroneous strain measurements.

Abstract: A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.

Abstract: A piezoresistive pressure transducer employing a sapphire force collector diaphragm having piezoresistive films of silicon epitaxially formed on a major surface thereof, preferably in a Wheatstone bridge pattern. The silicon piezoresistive film is preferably of a thickness of from 1,000 to 60,000 angstroms and is doped with boron in the range of from 5.times.10.sup.17 to 9.times.10.sup.20 atoms/cc. Electrical lead traces and electrical contact pads are also formed on the major surface of the force collector diaphragm. The diaphragm is mounted on a pressure cell base having a cavity in the upper surface thereof, the diaphragm enclosing the cavity so as to form a chamber with the piezoresistive silicon films within said chamber. The diaphragm is hermetically bonded by a ceramic glass to the base in a vacuum such that the chamber provides a vacuum pressure reference.

Abstract: A pressure sensor including a ceramic diaphragm which is deformable in response to a pressure applied thereto, a ceramic base associated with a periphery of the ceramic diaphragm, for supporting the ceramic diaphragm, and at least one resistor formed on the ceramic diaphragm. Resistance values of the resistor are adapted to vary depending upon a magnitude of deformation of the ceramic diaphragm, and thereby represent the pressure applied to the ceramic diaphragm. The ceramic diaphragm and the ceramic base consist of a co-fired body obtained by co-firing an unfired diaphragm member and an unfired base member.

Abstract: A transducer element particularly adapted for use in an apnea detection system is formed of resilient conductive material having an electrical impedance which varies in response to breathing movement of an infant. A control detects the varying impedance and generates an alarm signal whenever variations caused by breathing movements fall below a predetermined level.

Abstract: A sensor is provided for detecting a physical quantity such as fluid pressure and acceleration of a mass and converting same into electrical signals. The sensor has a diaphragm made of a metal deformable by the physical quantity, a layered constructed insulating means of an insulating material which is formed on the diaphragm by means of a physical vapor desposition process, wherein the layered constructed insulating means has at least two insulating material layers, a strain gauge formed on the layered constructed insulating means opposite the diaphragm by means of a physical vapor deposition process, and a contact zone on the strain gauge to provide an electrical connection for a physical quantity sensing device to the sensor. Due to the layered construction of the insulating means, the thickness of the insulating means as a whole may be reduced below that of a single layer insulating means and maintain good insulative properties particularly at excessive strain.

Abstract: A foot operated control device including electrical force sensing devices functional to sense forces applied to the control device and to produce electrical signals proportional to the force applied, the electrical signals being adapted to operate electrically responsive hydraulic control valves.

Abstract: A load cell comprises a distortion generating body including first and second arms each of which has a thickness y and which are arranged in parallel, and thin deformable portions of a thickness x, which are coupled to the two ends of each of the first and second arms and each of which has flat and curved surfaces facing each other, a height of the distortion generating body, a distance between both of the thin deformable portions coupled with both ends of each of the first and second arms, and a radius of curvature of the curved surface of the thin deformable portions being set to predetermined values H, D, and R, respectively, strain gauges insulatively formed on the flat surfaces of the thin deformable portions coupled with both ends of the first arm, and leading portions connecting the strain gauges to form a bridge circuit.

Abstract: A strain gauge for compensating the creep of a support and a process for obtaining a strain gauge. The gauge is bonded to a support and includes a piezoresistive pattern etched on one face of a flexible film. A layer of a material subject to relaxation is deposited on the other face of the film. The relaxation layer is bonded to a test piece of the same material as the support. A constant force is applied for producing a creep on the test piece and the resistance of gauge as a function of time is measured. The thickness of the relaxation layer is adjusted to cancel out the evolution of the resistance of the gauge.

Abstract: The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.

Abstract: A cantilever beam transducer which is formed by a batch technique utilizing conventional semiconductor processes. The cantilever beam structure has a central aperture which is rectangular in configuration and which is bounded by thinned rib or thinned area sections on either side of the aperture. Each of these areas accommodate a piezoresistive bridge structure which may include a longitudinal and transverse piezoresistive sensor both of which are located on the same surface of the beam within the thinned areas. The resultant cantilever structure has minimum cross-axis sensitivity while the thin ribbed areas enable it to be deflected in directions perpendicular to the main beam surfaces. The cantilever structure further includes top and bottom glass sheets which are anodically bonded to the cantilever structure and which serve as bidirectional stops to prevent excessive forces from damaging the beam.

Abstract: A strain sensor including a ceramic substrate deformable in response to a stress exerted thereon, and an electrically resistive layer formed on the ceramic substrate, so that a strain of the ceramic substrate caused by the stress is detected as a change in a resistance value of the electrically resistive layer. The electrically resistive layer has a composition which includes a dielectric material selected from the group consisting of glasses and ceramics, and at least one principal electrically conductive component in the form of a powder selected from the group consisting of: borides, carbides and nitrides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W; borides of Y, Sc and lanthanide series; BN; B.sub.4 C; BSi; SiC; and Si.sub.3 N.sub.4.

Abstract: An isometric control device or the like of the type having an elastic beam and strain guages attached to the surface of the beam characterized by at least a first group of three strain guages (D, F, G) each having an operative axis thereof inclined with a single predetermined angle with respect to the main axis (z) of said beam (10), and the strain gauges disposed at a first predetermined level along said beam (10).

Abstract: A semi-conductor type accelerometer features the provision of four piezo resistors on the surface of a flexible beam which interconnects the main body portion with a weight or mass which is adapted to cause the beam to flex under the application of an accelerative force. The resistors are subject to essentially the same ambient conditions whereby thermally induced drift is obviated while a high output for a given amount of beam flexure is obtained.

Abstract: A force detecting device includes an insulative strain element, strain sensors, and leads. The insulative strain element is electrically insulative at least at its surface. The strain sensors are formed of a piezoresistive thin film and deposited as a piezoresistive thin film pattern on the surface of the insulative strain element integrally therewith. The leads are formed of a highly conductive thin film and deposited as a highly conductive thin film pattern on the surface of the insulative strain element integrally therewith.

Abstract: A strain gage wherein neutral impurity atoms forming neither donors nor acceptors are doped in a silicon substrate and a diffused resistance element is formed in the doped region, thereby decreasing the temperature coefficient of resistivity without changing the resistivity and decreasing the temperature coefficient of piezoresistance coefficient with no effect on the piezoresistance coefficient which governs the sensitivity of the strain gage.

Abstract: There is disclosed an electromechanical semiconductor transducer which is composed of a substrate of a first compound semiconductor and layers of second to fifth compound semiconductors grown on the substrate. The compound semiconductor contains at least one element such as aluminum, gallium, and arsenic selected from Groups III and V of the periodic table. The transducer converts mechanical strain into electrical signals.

Abstract: The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.

Abstract: A force measuring device includes a rigid base plate and a first diaphragm symmetrical about a central normal axis and arranged in spaced parallel relationship to the base plate. An elastic connection between the base plate and a peripheral rim of said first diaphragm hermetically closes a cavity formed between the base plate and first diaphragm. A first projection is formed, for force introduction to the device, on an outer surface of the first diaphragm and extends along the central normal axis; a second projection extends from an inner surface along the central normal axis toward the base plate. A displacement sensor is arranged in the cavity between the base plate and second projection for sensing any displacement therebetween upon force application to the device, to generate an electrical signal indicative of the force applied.

Abstract: A resistor-adjusting apparatus is provided for adjusting resistors of a load-cell scale which has a load cell, having a resistance bridge circuit, for generating an electrical signal corresponding to a load weight, and an A/D converting section for converting the electrical signal supplied from the load cell into a digital signal corresponding to the load weight. A thin-film resistor for adjusting temperature characteristic, which is connected to the bridge circuit, is provided on the load cell so as to be exposed. The resistor-adjusting apparatus comprises a resistor adjustor for removing part of the thin-film resistor in response to a control signal and thus adjusting a resistance thereof, and a control unit for supplying, to the resistor adjustor, a control signal corresponding to digital signals that are generated by the A/D converting section in response to a predetermined load weight at different temperatures, causing the resistor adjustor to change the resistance of the thin film resistor.

Abstract: A highly sensitive strain gage containing a thin discontinuous metal layer whose conduction effect is based predominantly on the tunnel effect and which is applied uniformly onto a thin, nonmetallic, dielectric or semiconducting substrate such as uniaxially oriented or partially crystalline plastic film, an ordered ultrathin layer or a silicone-coated plastic film, the diffusion processes in the applied metal layer being reduced and its structural stability improved as a result of interaction of the substrate with the metal layer.

Abstract: A strain sensitive element for use in a system for converting mechanical movement of relatively movable portions of the element into electrical signals, includes a substantially planar substrate comprising an N-type silicon crystal material wherein the substrate includes one or more grooves extending into the substrate defining an integral hinge portion between at least two relatively movable parts. At least one unitary strain gage extends across a groove without any separate support so that the strain gage and the hinge portion are spaced apart. The strain gage is a unitary member derived from the same silicon crystal material of the substrate and comprises P-type silicon material. The strain gage is joined to two of the relatively movable parts of the substrate. At least one unitary conductor extends across a groove without separate support so that the conductor and the hinge portion are spaced apart.

Abstract: A stylus switch is activated automatically when the tip of the stylus is pressed against a digitizer tablet with sufficient force. The pressure switch includes a transducer in the form of an ink layer having electrical resistance which varies as a function of the pressure applied thereon. Electrodes of conductive ink contact the ink layer of the transducer, providing a circuit element including a variable resistance. The current which flows between the two conductive ink electrodes varies as a function of the force with which the stylus tip is pressed against the data tablet, thus providing an analog output which can be detected as a function of pressure or which can be detected to determine when the pressing force exceeds a predetermined value. Processing of the data representing the coordinates of the stylus tip is enabled only when the tip is being pressed with at least a predetermined force, i.e. the amount of force applied by a stylus user during writing.

Abstract: Thin film strain gauge system consisting of an elastically deformable flexible metallic substrate on which an electrically insulating layer of a plasma-polymerized material, in particular of Si:N:O:C:H-containing compounds and thereon a structured resistance layer as well as an electrically readily conducting layer having a structure for the electrical contacting are provided.

Abstract: A microbridge air flow sensor having a silicon nitride diaphragm formed on the surface of a single crystal silicon wafer. A rectangular 500 angstrom thick sacrificial layer was deposited on the silicon surface before the silicon nitride to define the exact position of the diaphragm. A series of etches from the backside of the wafer is performed to fabricate the device. A first silicon anisotropic etch from the backside is stopped at the sacrificial layer. A sacrificial layer selective etch is applied from the backside first pit to the sacrificial layer to remove all of the rectangular sacrificial layer. Anisotropic etch is again applied into the space created by the removed sacrificial layer whereby the second etch attacks the silicon exposed by the removal of the sacrificial layer and etches downward forming a second anisotropic etch pit. Thus all the etches are from the backside of the silicon wafer.

Abstract: A strain gauge has two metallic resistance layers, contact layers associated therewith, and a support for holding the strain gauge. A partially conductive insulation layer is disposed between the two resistance layers.

Abstract: This process consists of etching a substrate perpendicular to its surface in order to form a recess communicating therewith and in which can move laterally the flexible beam, the communication zone representing the image of the gauge to be produced, placing on the substrate surface a mask provided with an opening facing said recess and extending partly over the beam, passing through the opening a particle beam able to form a deposit of piezoresistive material constituting the gauge and electric contacts, said beam being oriented obliquely with respect to the substrate surface, eliminating the mask and producing electrical conductors on the upper and lower faces of the beam in order to supply current to the gauge.

Abstract: Force or pressure measuring device. Between a support member and a force or pressure introduction member elastomeric material is provided which strongly adheres to the two members and is in contact with at least one pressure sensor. With a preferred embodiment the support member is in a potlike form while the force or pressure introduction member is in the form of a piston received by the support member and forming a very narrow gap to the cylindrical surface thereof which gap is essentially completely filled by said elastomeric material.

Abstract: A method for achieving mechanical and electrical interconnection of first and second bodies of which the first has at least one conductive element its surface intended to face the second and the second has a through-hole for electrical connection provided with a metallic coating intended for electrical connections to the conductive element of the first body includes applying layers of vitreous glue to corresponding surface portions of the first and second bodies. Moreover, a coating of conductive material in a vitreous matrix is deposited by the thick film technique on the surface of the second body intended to face the first, adjacent the through hole with the coating extending at least partly into the hole and electrically connected to the metallic coating of this hole. The bodies are then joined bring the respective layers of glue into contact with each other and the conductive coating of the second body into contact with the conductive element of the first.

Abstract: A pressure detector has a cylindrical housing projecting into an atmosphere the pressure of which to be measured, a pressure chamber formed within the housing, to which is the pressure to be measured is introduced, a metallic diaphragm formed on a surface of one portion of a wall defining the pressure chamber, which deforms in accordance with changes in the pressure which is to be measured, and a strain gauge provided in the diaphragm for generating an output signal corresponding to the strain generated due to the deformation of the diaphragm. The strain gauge is composed of a diamond monocrystal plate and a diamond semiconductor film formed on the diamond monocrystal plate. On the diamond monocrystal plate are piled a titanium film, a platinum film, and a gold film, in sequence. The gold film is joined to the diaphragm by brazing.

Abstract: A scale wherein a platform is mounted on and is movable and/or deformable with reference to a base in response to the application of a load, such as the weight of a person standing on the platform. A strain gauge is mounted on a plate-like carrier on the base or directly at the underside of the platform, and its resistor is a thick film conductor whose resistance changes proportionally with the magnitude of the load which is applied to the platform. Such change of resistance is used to change the position of a pointer with reference to a scale which is calibrated to indicate the magnitude of the applied load.

Abstract: A glass header structure for a pressure transducer employs a cylindrical member fabricated from a borosilicate glass having a thermal expansion coefficient which matches silicon. The glass header has a central aperture which extends from the top to the bottom surface. Positioned about the central aperture are four smaller apertures located at 90 degree intervals and each containing an elongated terminal pin. The pins are of a nail head configuration with a flat top head of a larger diameter than the diameter of the apertures and of the main pin body. Affixed to the flat top surfaces of the terminal pins by means of ball bonding are wires which connect to the terminal areas of a semiconductor pressure transducer which is mounted over the central aperture of the header.

Abstract: A measurement transformer has a pressure chamber which is sealed off by a membrane (2). On the membrane (2) there is seated a ram (16) which rests against a central part (7) of a spring plate (6). The central part (7) is connected by means of two flexural beam sections (9, 10) with the edge of the spring plate (6). Furthermore, web sections (13, 14, 15) connect the central part (7) to the edge part (8). For the adjustment of the measurement transformer the web sections (13, 14, 15) can be cut through. The more web sections (13, 14, 15) are cut through, the easier it is for the central part (7) to be displaced relative to the edge part (8). Wire strain gauges (11, 12) on the beam sections (9, 10) register this displacement.

Abstract: An electrical resistor having a resistance layer 4 of a cermet material applied to a support 1 as well as contact layers 5 associated with said resistance layer 4, the resistor being subjected to heat treatment. A metallic, electrically non-conductive layer 3 is arranged between support 1 and resistance layer 4.

Abstract: A multiposition precision joystick type control device having a transducer mode in which an actuator button is movable in any lateral direction away from a neutral position to cause flexure of flexible bar mechanism along one or both of two orthogonally related axes, there being a set of transducers for sensing such flexure and providing a coordinate-related signal to apparatus to be controlled, the control device having a depress mode in which the actuator button is axially depressed for actuation of a switch and thereby providing an alternate controlling function. Overload mechanism including a spring loaded articulated connection between the actuator button and the flexible bar mechanism limits the degree of flexure which can be imparted to the flexible bar mechanism by movement of the actuator button in any lateral direction from its neutral position to prevent damage to the sets of transducers.

Abstract: The force measuring device comprises two plates arranged essentially parallel to each other and having therein between an elastomeric material into which a pressure sensor is embedded.

Abstract: A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.

Abstract: A stylus switch is activated automatically when the tip of the stylus is pressed against a digitizer tablet with sufficent force. The pressure switch inlcudes a transducer in the form of an ink layer having electrical resistance which varies as a function of the pressure applied thereon. Electrodes of conductive ink contact the ink layer of the transducer, providing a circuit element including a variable resistance. The current which flows between the two conductive ink electrodes varies as a function of the force with which the stylus tip is pressed against the data tablet, thus providing an analog output which can be detected as a function of pressure or which can be detected to determine when the pressing force exceeds a predetermined value. Processing of the data representing the coordinates of the stylus tip is enabled only when the tip is being pressed with at least a predetermined force, i.e. the amount of force applied by a stylus user during writing.