Abstract: An apparatus is described. The apparatus includes a substrate and one or more sensor components formed on the substrate. And, the apparatus includes one or more electrical circuits formed on the substrate electrically coupled with at least one of the one or more sensor components formed on the substrate.

Abstract: An apparatus senses a pressure of a fluid from a fluid medium. The apparatus has a port body with a peripheral wall surrounding an interior channel. The interior channel extends between a diaphragm on the port body and an opening for receiving the fluid. A strain gauge is disposed on the port body. The strain gauge has two or more resistors connected between input/output pads and ground pads. The resistors are spaced substantially equidistant from the ground pad to reduce mobile ion migration.

Abstract: Disclosed is a micro sensor. Particularly, disclosed is a micro sensor capable of changing a resistance value of a resistance unit connected to a sensor electrode depending on a sensing material, the resistance unit having at least two resistors.

Abstract: Embodiments relate generally to systems and methods for adjusting a temperature coefficient of the offset voltage (TCO) for a pressure sensor, the method comprising assembling the pressure sensor, wherein the sensor comprises a plurality of resistive elements; determining the TCO distribution for the sensor; increasing the resistance of one of a stress induced resistor or a leadout resistor of a first resistor; and decreasing the resistance of one of the stress induced resistor or the leadout resistor of the first resistor to adjust the TCO of the sensor.

Abstract: A force sensor is disclosed. The force sensor includes a force-sensitive structure that compensates for temperature and other environmental changes through the use of a strain-sensitive element and one or more reference elements. An array of such force-sensitive structures forms a force-sensing layer.

Abstract: Embodiments are directed to a strain sensor having a thermally conductive element and methods related to the use thereto. In one aspect, an embodiment includes a substrate. A first strain-sensitive element may be positioned on a first surface of the substrate and a second strain-sensitive element may be positioned on a second surface of the substrate. The embodiment may further include a thermally conductive post positioned within the substrate and extending beyond at least one of the first or second surfaces. The embodiment may further include a thermally conductive plate separated from the substrate and attached to the thermally conductive post.

Abstract: A force detector includes a first base part, a second base part, and a pressure detection unit provided between the first base part and the second base part and including a piezoelectric element that outputs a signal in response to an external force, wherein the pressure detection unit has a first member having a portion in contact with the first base part, a second member having a portion in contact with the second base part, and a third member connecting the first member and the second member, a first longitudinal elastic modulus of at least a part of the first member is lower than a third longitudinal elastic modulus of the third member, and a second longitudinal elastic modulus of at least a part of the second member is lower than the third longitudinal elastic modulus of the third member.

Abstract: There is provided a pressure sensor which includes: a diaphragm having an inside surface facing to a fluid-tight space, the diaphragm including a diaphragm film that is part of the inside surface and deformable in response to a pressure application, and a diaphragm film support that is part of the inside surface and constitutes a periphery of the diaphragm film; a strain sensor bonded to the inside surface so as to lie partially on the periphery and having plural strain gauges thereon; and a depression formed on the inside surface, when defining an x-direction oriented from center of the inside surface to a position bonded of the strain sensor and a y-direction perpendicular to the x-direction on the inside surface, the depression extending a certain length in the y-direction, the depression being adjacent to or a certain distance apart from an edge of the strain sensor in the y-direction.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to interconnect reliability structures and methods of manufacture. The structure includes: a plurality of resistors; and a voltmeter configured to sense a relative difference in resistance of the plurality of resistors indicative of at least one of a via-depletion and line-depletion.

Abstract: A field-effect transistor power device includes a source electrode, a drain electrode, a wide gap semiconductor including a channel region and a drift region, the channel region and the drift region forming a series current path between the source electrode and the drain electrode, a gate insulating film that covers the channel region, and a gate electrode formed on the gate insulating film. In the series current path which is electrically conducting when the field-effect transistor power device is in an ON state, any region other than the channel region has an ON resistance exhibiting a positive temperature dependence, and the channel region has an ON resistance exhibiting a negative temperature dependence. A ratio ?Ron/Ron(?30° C.) is 50% or less.

Abstract: First and second resistors (sensing elements) are connected in series between first and second potentials. The junction point voltage between the first and second resistor is supplied to an inverting input of a first operational amplifier. The non-inverting input is supplied with a reference voltage Vref generated by third and fourth resistors. A feedback resistor is connected between output and inverting input of the operational amplifier OP1. The difference between a temperature coefficient of resistance TCR of the sensing elements and a temperature coefficient of sensitivity TCS is equalized to a temperature coefficient of resistance of the feedback resistor. Further, the reference voltage is unchanged in accordance with the detected physical quantity or temperature variation.

Abstract: A high-performance strain gauge has a high gauge factor and a decreased temperature coefficient of resistance (TCR). The strain gauge has a laminated structure that includes a first layer formed of a positive TCR material and a second layer formed of a negative TCR material.

Abstract: A temperature compensation element for a high-temperature strain gage and the method of fabricating the same. Preferably, the element is a “dummy” strain gage not mechanically attached to the substrate. The element is encapsulated in an insulative material and used to compensate an active high-temperature strain gage and wired in a half-bridge configuration. The temperature compensation element and high-temperature strain gage are fabricated using the method of the present invention. This method includes temporarily adhering the element to a heat sink, encapsulated in an insulative material and then removed from the heat sink. Next, the element is either stacked or placed near the active gage. Ideally, the element and the active gage have substantially similar heat transfer and electrical properties.

Abstract: A motion sensor for sensing motion or acceleration of a body, such as the type used in onboard automotive and aerospace safety control system, navigational system or active suspension control system. The motion sensor includes a support frame, a bridge projecting from the support frame, and a proof mass suspended from the support frame by the bridge so as to enable the proof mass to respond to an input force imposed on the motion sensor. The bridge is provided with a strain sensing element that generates an acceleration signal in response to a deflection of the proof mass. The motion sensor further includes a structural feature capable of compensating for mechanically and thermally induced strains imposed on the motion sensor by generating a compensation signal in response to such strains.

Abstract: Apparatus for charging a battery (5) includes a battery compartment for accommodating the battery in a manner such that its electrical terminals are in contact with a pair of electrodes. The electrodes are connectable to respective poles of a controllable source of electrical energy. A resistive strain gauge (15) for monitoring mechanical deformation of the battery is attached to an elastic surface within the battery compartment, against which surface the battery is pressed when it is located in the battery compartment. In a particular embodiment, one of the electrodes (9) is a sprung metallic sheet and the elastic surface is located on this sheet.

Abstract: Apparatus for recharging a battery includes a compartment for accommodating the battery in a manner such that its electrical terminals are in contact with a pair of electrodes. The electrodes are connectable to respective poles of a controllable source of electrical energy. A strain gauge is positioned so as to make contact with a wall of the battery when the battery is in place in the compartment. The strain gauge includes a foil which carries a resistive element, each of the two extremities of the resistive element being connected to an electrical device via a separate contact wire, whereby the coefficient of thermal expansion of the strain gauge is substantially equal to that of the wall of the battery. The material of one of the contact wires, at its juncture with the resistive element, has a different Seebeck coefficient to the material of the other contact wire at its juncture with the respective element.

Abstract: A pressure transducer has a cylindrical body with a thread formed on at least part of the outer surface. A resistance element is wound in the thread and an internal bore receives pressurized fluid. The resistance element is strained by application of pressure to vary its resistance.

Abstract: An electrical circuit such as a Wheatstone bridge has a conductive strip extending between a current input terminal and a current output terminal and includes two resistors having a connecting part therebetween, a conductive segment extending between the connecting part and a measuring terminal, the connecting part being formed as a wider portion of the conductive strip in the direction of the conductive segment, the conductive segment having an adjusting portion between the connecting part and the measuring terminal.

Abstract: A load cell utilizable in a weighing apparatus. The load cell is fabricated by forming a strain gauge pattern (4) of a copper-nickel alloy on a surface of a strain inducing element (1) by the use of a sputtering technique and subsequently heat-treating the strain gauge pattern under an oxygen-free atmosphere, wherein the weight ratio of copper and nickel is chosen to be of a value effective to permit the temperature dependent coefficient of resistance of the strain gauge pattern (4), which undergoes shrinkage and expansion together with the strain inducing element (1), to be substantially zero. In this way, the load cell can be obtained which is not affected by a change in temperature and which gives a high measurement precision.

Abstract: A strain gage includes four gages that constitute a bridge circuit, and at least one resistance device which is used to adjust the offset voltage of the bridge circuit formed by the four gages. The resistance device is disposed on the strain gage between one of the gages making up the bridge circuit and a terminal thereof. Finally, each resistance device disposed on the strain gage has a series of resisting elements which vary in size and which are connected in parallel fashion.

Abstract: A semiconductor pressure sensor chip has a pattern including first diffusion sections in which external connection contacts are formed. Resistors are connected to the first diffusion sections through second diffusion sections in a bridge circuit such that the distances between a contact and the second diffusion sections connected to a first diffusion section where the contact is disposed are equal. This arrangement reduces drift of the offset voltage with changes in temperature, thus providing a high precision semiconductor pressure sensor with an improved yield.

Abstract: A strain gage or a measuring transducer equipped with such a strain gage has, for supporting the measuring grid structure, a backing made of a polyphenylenesulfide film. Such a backing assures a plurality of desirable characteristics simultaneously and equally well for each characteristic.

Abstract: A pressure transducer circuit is provided which includes a bridge arrangement of piezoresistors which are connected to a diaphragm that is sensitive to a pressure which is monitored. The output of the sensor bridge is provided to a preamplifier which is, in turn, associated with an attenuation network and compensation circuitry. The transducer incorporates a plurality of temperature sensitive resistors within the compensation circuit and these temperature sensitive resistors are produced at the same time and during the same manufacturing step as the piezoresistors of the bridge arrangement. In addition, they are produced using the same dopant and are implanted or diffused in the same semiconductor layer as the piezoresistors. The pressure transducer circuit incorporates a plurality of trimmable resistors which are adjusted during a calibration stage to compensate for temperature variations and nonlinearity of the numerous components in the circuit.

Abstract: This invention provides a semiconductor film pressure sensor in which the pressure-sensitive resistance layers are made of an n-type polycrystalline silicon layer, and a method of manufacturing the sensor. In the semiconductor film pressure sensor of the invention, the pressure-sensitive resistance layers are formed on a diaphragm, and in addition a coarsely adjusting pattern and a finely adjusting pattern for zero point adjustment and the resistors of a temperature compensating circuit are formed on the diaphragm using the same n-type polycrystalline silicone layer. In formation of the n-type polycrystalline silicone layer, the substrate temperature is held at 500.degree. to 600.degree. C. The coarsely adjusting pattern and finely adjusting pattern for zero point adjustment, and the resistors of the temperature compensating circuit are formed in the same step as the pressure-sensitive resistance layers.

Abstract: In a pressure transmitter, a central region of an isolator diaphragm with a substantially flat shape at an undeflected position near room temperature has a depressed shape at a deflected position at a colder temperature. The isolator diaphragm is over a shaped concavity in a transmitter body with a concave shape which corresponds to the depressed diaphragm shape to reduce output error.

Abstract: A low-cost, quickly prototyped sensor circuit assembly comprises a sensor integrated circuit and an amplifier circuit, wherein all adjustable system resistors are located on the sensor integrated circuit in the form of adjustable thin-film resistive elements whose manufacture requires no new mask layers. An assembly method comprises trimming the sensor and amplifier circuit as a matched pair.

Abstract: A load cell comprises a distortion generating body including first and second arms each of which has a thickness y and which are arranged in parallel, and thin deformable portions of a thickness x, which are coupled to the two ends of each of the first and second arms and each of which has flat and curved surfaces facing each other, a height of the distortion generating body, a distance between both of the thin deformable portions coupled with both ends of each of the first and second arms, and a radius of curvature of the curved surface of the thin deformable portions being set to predetermined values H, D, and R, respectively, strain gauges insulatively formed on the flat surfaces of the thin deformable portions coupled with both ends of the first arm, and leading portions connecting the strain gauges to form a bridge circuit.

Abstract: A cantilever beam transducer which is formed by a batch technique utilizing conventional semiconductor processes. The cantilever beam structure has a central aperture which is rectangular in configuration and which is bounded by thinned rib or thinned area sections on either side of the aperture. Each of these areas accommodate a piezoresistive bridge structure which may include a longitudinal and transverse piezoresistive sensor both of which are located on the same surface of the beam within the thinned areas. The resultant cantilever structure has minimum cross-axis sensitivity while the thin ribbed areas enable it to be deflected in directions perpendicular to the main beam surfaces. The cantilever structure further includes top and bottom glass sheets which are anodically bonded to the cantilever structure and which serve as bidirectional stops to prevent excessive forces from damaging the beam.

Abstract: First and second piezo reistances are disposed on a flexible member which supports a mass member on a semiconductor base and are arranged to be responsive to the amount of flexure thereof. The flexible member has a predetermined uniform thickness. Second and third piezo resistances are arranged on a separate compensation member which projects from the base. This member is subject to essentially no flexure and has exactly the same uniform thickness as the flexible one. The four piezo resistances are connected to define a bridge circuit the output of which is indicative of the force which induces the flexure of the flexible member.

Abstract: In a circuit for a sensor the output signal of which is dependent not only on the variable to be determined but also on the temperature, an amplifier having a temperture-dependent amplification factor is connected to the output of the sensor, and the output of the amplifier is connected to an adder circuit to which a temperature-dependent voltage can be fed. The amplifier is preferably a differential amplifier within the feedback branch of which a temperature-dependent resistor is inserted. The adder circuit is preferably formed by another differential amplifier to the inputs of which the output signal of the differential amplifier with temperature-dependent amplification, the temperature-dependent voltage and a substantially temperature-independent voltage can be fed via resistors.

Abstract: A pressure sensor in which a Ni-Si-B amorphous alloy strain gauge is covered and protected from the external impact and dust in the air by a protective film.

Abstract: A temperature compensation scheme for a piezoresistive pressure sensor utilizing resistors with carefully chosen temperature coefficients of resistivity to provide a totally passive network.

Abstract: A pressure sensing device including a single crystal of silicon configured to have a diaphram portion, a frame portion and associated circuitry formed on the crystal is described. Piezo-resistive elements on the boundary of the frame and the diaphram portions of the crystal respond to changes in pressure. The piezo-resistive elements, associated elements, and connecting conducting paths are formed by thin film and/or doping techniques to provide a monolithically integrated circuit. The elements are passive and require only application of input voltages and detection of output signals to provide an operative component. Trimmable resistors are provided for compensation and resistive adjustment, and at least one resistive element provides temperature compensation.

Abstract: A pressure transducer of the type employing a pressure-responsive diaphragm (11) with silicon piezoresistive strain gauges epitaxially deposited thereon is provided with integral digital thermal compensation of span shift and zero shift. The strain gauges are connected in a bridge circuit (30), and a differential voltage across the bridge circuit is amplified by an instrumentation amplifier (46). A temperature sensitive resistor (36) is deposited on the pressure-responsive diaphragm. This resistor is connected in a bridge circuit (35) the output of which is connected to an analog-to-digital (A/D) converter (54) which generates a digital number corresponding to the measured temperature of the piezoresistive strain gauges. This digital number is used to address pre-programmed correction data stored in a programmable read only memory (PROM) (53). The numerical correction data from the PROM is converted by a digital-to-analog (D/A) converter (55) to an analog correction signal.

Abstract: A load cell and a method of correcting the same are provided wherein a beam member on which an insulator film is formed is prevented from being trimmed by a laser beam upon laser trimming thereof. The load cell comprises a span resistor member and a zero point resistor member both formed separately of the beam member and including a span temperature correcting thin film resistor and a zero point balance temperature correcting thin film resistor, respectively, each of which has a temperature coefficient and is formed on a substrate. The resistor members are applied to the insulator film on the beam member and the thin film resistors are connected to a bridge circuit. The thin film resistors are trimmed with a laser beam to correct the span temperature correcting thin film resistor and the zero point balance temperature correcting thin film resistor for temperature. The substrates intercept a laser beam upon laser trimming of the thin film resistors.

Abstract: A pressure transducer, which includes a silicon diaphragm with ion-implanted resistors in Wheatstone Bridge configuration and in insulating layer covering the diaphragm, is provided with temperature compensation for differences in thermal expansion coefficients of the layers by depositing a layer of aluminum onto the central portion of the diaphragm.

Abstract: A piezoresistive transduction element for incorporation into a pressure transducer includes a plate defining a diaphragm zone and preferably of silicon with piezoresistances diffused into it, an insulating plate of a glass material and a base plate. The plates are preferably connected to each other by anodic connections in a series of steps. The base plate is made of a material having substantially the same coefficient of thermal expansion as that of the material of the plate which defines the diaphragm zone. Furthermore, the dimensions of the base plate are matched to those of the diaphragm plate. By these measures the deformation forces exerted by the base plate and diaphragm plate on the insulating plate upon changes in temperature are of substantially the same magnitude and therefore there is minimum bending of the diaphragm plate. A symmetrical transduction element is created which has minimum zero point displacement and minimum sensitivity changes in use.

Abstract: A load cell has four strain gauge resistors formed through an insulation layer on the beam body having a strain generating section, a conductive pattern for forming a bridge circuit by coupling the strain gauge resistors compensation resistance sections for compensating the bridge balance and span of the bridge circuit is provided. A section of the conductive pattern except the section coupled to the strain gauge resistors is disposed at a position sufficiently isolated from the strain gauge resistors.

Abstract: A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current.

Abstract: A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source.

Abstract: In a device for measuring forces by means of an anti-friction bearing which is provided with strain gauges at various measurement points, which serve to detect overroll extensions, two strain gauges connected as a half-bridge are used in each case, which are adapted to materials with different coefficients of expansion. By the use of such different strain gauges, temperatures and forces can be measured with one and the same measuring device, while force-dependent alternating-voltage fractions appearing at the center tapping of the half-bridge are filtered out of the total signal by a filter.

Abstract: A thin-film strain gauge and a method for producing it are proposed; the strain gauge is advantageously capable of integration into a thin-film circuit. The strain gauge comprises an elastically deformable spring element in combination with at least one elongation-sensitive resistor. The resistor disposition (R1-R4), the low-impedance connections (L11-L42) between the various resistance regions and the associated connection tracks (L5-L8) are applied in a vacuum process, preferably by cathode sputtering. The low-impedance connections (L11-L42) and the connection tracks (L5-L8) are of material which, although different from the material making up the actual resistance region, still has approximately the same temperature coefficient of resistance, so as to preclude errors caused by temperature.

Abstract: A resistance bridge circuit is temperature compensated, for both zero error and sensitivity, over a predetermined temperature range by connecting a first compensating resistance in series with one resistor of the bridge, and a second compensating resistance in parallel with the same or an adjacent resistor of the bridge, to reduce zero error, the positions and values of the first and second resistances being determined from measurements, at a plurality of temperature levels, of the voltage levels and resistance values of the bridge, and on the arrangement of proposed external connections to the bridge. Third and fourth compensating resistances are connected in series and parallel respectively with the bridge as a whole, the values of the third and fourth resistances being dependent on measurements as aforesaid and on the proposed external connections. The four compensating resistances are the only compensating elements required to provide a predetermined zero error and sensitivity.

Abstract: A hybrid transducer employing a ceramic substrate having on a surface a suitable geometry for defining an active or clamped area, a semiconductor strain gage is positioned on said substrate within said active area and connections are made to said gage by conductors printed on said substrate by thick or thin film techniques. Thick film printing techniques or thin film deposition techniques are employed to print the conductors, terminal areas, compensating resistors and stop members.

Abstract: A weight detection circuit for a load cell scale which connects an operational amplifier directly to an-output of a bridge circuit of a load cell so as to simplify a conventional differential amplifier, thereby enabling simplification of the overall weight detection circuit to result in a reduction in manufacturing cost. Furthermore, a bias resistance is connected directly to the bridge circuit for the load cell thereby also to simplify the bias circuit to lead to a further reduction in manufacturing cost.

Abstract: A transducer operating on the strain gauge principle having integral temperature compensation and calibration resistors is disclosed. In the presently preferred embodiment, a silicon dioxide layer is disposed on a silicon substrate. Platinum alloy strain gauge resistors are disposed on the silicon dioxide layer and form a Wheatstone bridge circuit configuration. Laser trimable chromium nitride, platinum alloy and gold temperature compensation and calibration resistors are formed on the silicon dioxide layer from the same films used to form the strain gauge, adhesion layers, conductors and bonding pads, to permit the transducer to be calibrated such that its electrical characteristics are in conformance to specified tolerances when the transducer is subjected to temperature variations.

Abstract: A three-wire static strain gage apparatus utilizing a switching unit in combination with a Wheatstone bridge circuit to make strain gage measurements which are temperature corrected by switching to a temperature gage to measure the strain gage circuit's temperature at the time of the strain measurement.

Abstract: A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

Abstract: A strain gage transducer wherein a plurality of strain gages are mounted on surface portions of a beam. The beam finds a plurality of thermal conductivity paths for conducting heat from the strain gages. The physical configuration defined by the beam for the first thermal conductivity path differs from that defined by the beam for the second thermal conductivity path, while yet the paths are arranged to be substantially identical in effective thermal conductivity so that dissipation of heat from the strain gages is substantially similar. In the illustrated embodiment, such differential beam configuration is provided by inclusion in the beam of one or more cavities. In one form, at least one cavity extends fully through the beam, and in another form, at least one cavity defines a recess extending only partially through the beam. In the illustrated embodiment, the cavity structure may be used to control the heat sink characteristics of the different portions of the beam.

Abstract: A measurement circuit and calibration technique for temperature compensating a half-bridge-high-temperature strain gage, capable of providing data which is independent of cable resistance variations.The need for a compensating resistor is eliminated and the cable conductors are removed from the measurement circuit. The output signal is easily and accurately converted to a measurement of strain without the need for auxiliary measurement required with prior art circuitry.