With Temperature Compensation Patents (Class 338/3)
  • Patent number: 4333349
    Abstract: There is disclosed a balancing network for a piezoresistive semiconductor bridge configuration. The balancing network comprises a plurality of series resistors arranged in series with the sensing elements in the bridge configuration. Each resistor differs from the previous one according to a power of two to form a binary ladder arrangement. The individual resistors are associated with terminals to allow the transducer manufacturer to selectively short one or more resistors to provide zero balance compensation. The resistors are located on the nonactive portion of the semiconductor substrate and are fabricated by the same techniques employed for fabrication of the semiconductor piezoresistive sensing elements to assure temperature tracking of the unit with the desired temperature operating range.
    Type: Grant
    Filed: October 6, 1980
    Date of Patent: June 8, 1982
    Assignee: Kulite Semiconductor Products, Inc.
    Inventors: Joseph R. Mallon, Anthony D. Kurtz
  • Patent number: 4325048
    Abstract: An improved deformable flexure element (10) for use in strain gage tranducers and a process for making the element are disclosed. By appropriate selection of materials and gage geometries in accordance with the invention, the zero and span temperature coefficients of the transducer are reduced substantially to zero. Improved processes for producing such flexure elements are disclosed.
    Type: Grant
    Filed: February 29, 1980
    Date of Patent: April 13, 1982
    Assignee: Gould Inc.
    Inventors: Hooshmand Zaghi, Thomas C. Tisone
  • Patent number: 4320664
    Abstract: A semiconductor pressure sensor employing the piezoresistive effect of single crystal silicon resistors to measure the flexure of a semiconductor diaphragm. In the preferred embodiment, a Wheatstone bridge composed of a first pair of resistors disposed on the center of the diaphragm and a second pair of resistors disposed on the periphery of the diaphragm is employed. Due to the nature of the diaphragm flexure, the first and second pairs of resistors exhibit piezoresistivity in opposite directions enabling pressure measurement with greater sensitivity. The diaphragm is mounted on and supported by a silicon clamp ring. The diaphragm and the clamp ring together form a unitary semiconductor structure.
    Type: Grant
    Filed: February 25, 1980
    Date of Patent: March 23, 1982
    Assignee: Texas Instruments Incorporated
    Inventors: Larry A. Rehn, Roy W. Tarpley
  • Patent number: 4264889
    Abstract: A pressure transducer has at least one pressure transmitting space filled with liquid, a space for a pressure to be sensed connected to the pressure transmitting space through a diaphragm, and a pressure sensitive element in the pressure transmitting space for transducing a pressure transmitted from the space for the pressure to be sensed to the pressure transmitting space through the diaphragm to an electrical signal. A printed circuit board wired to electrically connect terminals of the pressure sensitive element is arranged closely to the element and thin temperature sensitive elements for temperature-compensating the pressure sensitive element are arranged on the printed circuit board.
    Type: Grant
    Filed: January 18, 1980
    Date of Patent: April 28, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Yoshimi Yamamoto, Mitsuo Ai, Yoshitaka Matsuoka, Takeo Nagata, Tsutomu Okayama, Akira Ikegami
  • Patent number: 4166269
    Abstract: A temperature compensated piezoresistive transducer includes a silicon body having a major top surface and an under surface. The body has generally parallel spaced first and second elongate slots formed therein extending through said top and under surfaces to define a center portion between said slots and first and second outer portions at the outward edge of the respective slots. The center portion is adapted to receive pressure to be measured. The body has an additional slot extending through the top and bottom surfaces and extending around the first, second and center portions to define the outer periphery of a transducer membrane with portions of the body remaining to integrally support the membrane. Plural piezoresistive elements having elongate and transverse dimensions are formed on the membrane. The elements are arrayed to receive compressive and tensile stress when pressure is applied.
    Type: Grant
    Filed: March 6, 1978
    Date of Patent: August 28, 1979
    Assignee: Signetics Corporation
    Inventors: Mark L. Stephens, Paul R. Gray
  • Patent number: 4157528
    Abstract: Subterranean earth formations containing energy values are subjected to hydraulic fracturing procedures to enhance the recovery of the energy values. These fractures are induced in the earth formation by pumping liquid into the wellbore penetrating the earth formation until the pressure of the liquid is sufficient to fracture the earth formation adjacent to the wellbore. The present invention is directed to a transducer which is positionable within the wellbore to generate a signal indicative of the fracture initiation useful for providing a timing signal to equipment for seismic mapping of the fracture as it occurs and for providing a measurement of the pressure at which the fracture is initiated.
    Type: Grant
    Filed: November 8, 1977
    Date of Patent: June 5, 1979
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Lowell Z. Shuck