Abstract: A precision resistor exhibiting a temperature coefficient of resistance which is very low and which is virtually independent of time, and capable of accepting high power, comprises a resistive foil applied to a substrate by means of an appropriate cement, wherein the coefficient of thermal expansion of the substrate is either at zero or as close to zero as is possible, and wherein the resistivity versus temperature characteristic of the foil selected is adjusted so as to compensate for the thermal strain induced change in resistance which results when the temperature of the assembly changes, and the device is reacting to the application of power virtually without creating a transient phenomenon due to the flow of heat. Also a method for producing such a precision resistor.

Abstract: A PTC thermistor device includes a heat conductive ceramic case having an aperture at one end and a groove recessed from the aperture; a plate-like PTC thermistor body having electrodes thereon, with a first major portion mounted in the groove in such a manner that a clearance is formed between an outer peripheral surface of the plate-like PTC thermistor body and the groove, and having a second minor portion extending outwardly from the groove; a heat resisting binding agent filled in the clearance, for conducting heat from the plate-like PTC thermistor body to the heat conductive ceramic case and for bonding the electrodes with the heat conductive ceramic case; electrode plates connecting a power source to the PTC thermistor body and having a portion extending into the aperture of the heat conductive ceramic case; and a heat resisting binding agent for sealing a space between the extended portion of the electrode plates and the aperture of the heat conductive ceramic case, such that stability against tempera

Abstract: A magnetoelectric transducer includes a high mobility semiconductor thin film formed on a layer such as an alumina film. Processing to form the device is improved by simultaneous patterning of the semiconductor thin film and an electrode layer. Improved resistance to the effects of heat are obtained by using a highly heat conductive substrate. Integrally with the substrate there may be formed an element such as a series resistor for temperature compensation of the magnetic sensor of the transducer.

Abstract: In a heating system for heating a ceramic body suitably adapted for, but not limited to, a detector to measure the oxygen concentration of a gaseous mixture such as automobile exhaust gas by using the principle of an oxygen concentration cell made of an oxygen ion conductive solid electrolyte body with electrodes mounted on opposite surfaces thereof, the inventive heater or detector and the method use AC voltage electrode means provided on the solid electrolyte body to apply an AC voltage thereto for heating the heater or detector.

Abstract: A heating element comprises a resistor comprising a plurality of fine particles or thin films having a negative temperature coefficient of electrical resistance, and highly resistant region layers interposed between the fine particles or thin films, at least two separate electrodes arranged in contact with different particles or layers of the resistor, and means for applying across said electrodes an AC electric voltage, said means operable at AC frequencies which are not lower than a frequency whose complex impedance characteristics which when graphed in the manner shown in FIG. 4 hereof correspond to point B of said graphed complex impedance characteristics. This heating element has the following merits that it can be formed into an optional shape, is low in the power consumption, can be rapidly heated, has temperature self-adjusting performance and temperature detecting performance and is excellent in the durability.

Abstract: The disclosed heater with solid electrolyte has a resistor embedded in or tightly secured to a solid electrolyte and an AC power source connected to the resistor, so that heat is generated both in the resistor by an alternating current from the AC power source and in the solid electrolyte by an alternating current flowing therethrough depending on the temperature-sensitive resistance of the solid electrolyte being heated by the resistor.

Abstract: A fluid leakage detecting element comprises a heat generating resistive member and a temperature compensating resistive member disposed on a substrate. Each of the resistive members is prepared in the form of a paste of a metal which has a high temperature coefficient and a high thermal conductivity and whose melting point is higher than the baking temperature of the substrate. These resistive members are printed in thick film form on the substrate which is sufficiently electrical insulating and has a high thermal conductivity.

Abstract: Improved structure for measuring the air flow in large conduits, such as those used to supply air conditioning and heating ducts, by sampling substantially all of the cross sectional area of the conduit in a given transverse plane to obtain an average electrical signal which is compared with a reference signal to obtain a measured voltage corresponding to average flow.

Abstract: A system for extending the temperature range over which diffused semiconductor strain sensing devices specifically can be used includes a semiconductor chip having a base material and a semiconductor device formed in the base material. Biasing potential is applied to the base material and excitation potential applied to the diffused device. The biasing potential and the excitation potential are selected relative to one another to permit a predetermined variation in the semiconductor device characteristic with temperature over an extended temperature range. In the semiconductor strain sensing application, this predetermined characteristic is the impedance of the device. In this way, compensation for the variation of the characteristic can be applied to extend the useful temperature range for the semiconductor device.

Abstract: An ohmic resistor of the bulk resistance type having a large mass of semiconductor material and remarkably stable resistivity at the operating temperature is made up of a rectangular parallelepiped of silicon doped by at least two substances, one substance being of the acceptor type and the other being of the donor type. The resistor then has much higher stability within the temperature range of -50.degree. C. to +200.degree. C. A second substance of the donor type (consisting of caesium, for example, while the first consists of gold) permits a further improvement in stability.

Abstract: A precision resistor using a resistance metal film etched into a long serpentine strip cemented to a substrate. This substrate is a composite of rigid materials and plastics. The composite thermal coefficient of expansion of the substrate is given a non-linearity which in turn induces a stress related non-linear resistance change in the cemented film when the temperature changes. This stress-induced non-linear change is of approximately the same shape as the inherent non-linearity of the resistance versus temperature of the metal film, but opposite in polarity, over a wide range of resistor operating temperatures. Over that range, a much closer approximation to complete temperature compensation is obtained than previously.

Abstract: A semiconductor pressure detection device is provided which is adapted to detect pressure using resistors formed in the surface area of a semiconductor substrate and having a piezo-effect. A diode is formed in the surface area of the semiconductor substrate and a drive voltage corresponding to a temperature variation is supplied to a bridge circuit through the diode.

Abstract: A circuit technique is disclosed for compensating for changes in the resistance of an integrated circuit resistor in an epitaxial bed, which is exposed to temperature changes. The resistance of an integrated circuit resistor is a function of the temperature at which is operates. The invention is based on the recognition that the resistance of the resistor is also a function of the potential difference between the body of the resistor and the epitaxial bed itself. Temperature compensation is achieved by connecting a temperature sensing circuit to the epitaxial bed, which has a voltage output which varies inversely with respect to the temperature coefficient of resistance of the resistor. Thus, the net change in the resistance of the resistor as it undergoes a temperature change, approximates zero.

Abstract: A tapered resistor device which includes generally a tapered resistive film comprising a semiconducting material or other suitable material with a negative temperature coefficient of resistivity is provided. It is apparent with reference to the curves which show the variation of .DELTA.E that large energy savings are possible at the narrow end of the taper with relatively small concomitant degradation in the temperature profile of the region of interest. It is therefore seen that employing a material with a negative temperature coefficient of resistivity provides an improvement in reducing power usage according to the principles of the instant invention.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.

Abstract: Disclosed is a resistor comprising a nonconductive substrate on which is disposed a rectangularly-shaped coating of resistive material having a negative TCR. Oppositely disposed along the longer sides of the coating is a pair of elongated, parallel strips of resistive material having a positive TCR. Electrical connection is made to the opposed ends of the coating and to an end of each strip. The strips and electrical connections are so disposed that at low temperatures, current flow is predominantly across a relatively wide, short path in the coating between the strips, and at higher temperatures, current flow is predominantly along a longer, narrower path in the coating which is parallel to the strips.

Abstract: Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.

Abstract: A polycrystalline film having an electrical resistivity independent of temperature is disclosed. The film has substantially only one crystalline phase. The crystals forming that phase are of a semiconductive material supersaturated with a deep level dopant and have average dimensions from about 200 to 10,000 angstroms. At least about 10 atomic percent of the deep level dopant is dispersed within the semiconductive material crystals forming the one crystalline phase. The film is useful in making an electrical resistor whose resistance value is independent of temperature from about 4.degree. Kelvin to approximately 373.degree. Kelvin. Aging effects limit utility at significantly higher temperatures.

Abstract: An electrically conductive fibre formed from a thermoplastic organic polymer and having a zero or positive temperature coefficient of resistance. It is produced by the sequential steps of embedding and/or dispersing electrically conductive carbon particles into an outer region of the fibre, removing at least some of any free, unadhered carbon particles, if any are present, from the surface of the fibre by washing, and heating the fibre to a temperature whereby its temperature coefficient of resistance becomes zero or is converted to a positive value.

Abstract: A switching point, for telephone switching, and a matrix are provided. They use thermoconductor materials i.e. materials capable of a sudden change in conductivity at a certain temperature, as V O.sub.2. The basic switching point comprises a resistive layer with a significant Joule effect, an insulating layer and a layer of V O.sub.2, deposited one on top of the other on the same substrate, using thin layer technology. Two elements connected in series enable a logic inverter to be formed. Three thermoconductive elements enable a telephone wire switching point to be formed between two conductors with a middle point connected to earth.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.