Abstract: An image of a portion of a semiconductor die is obtained that shows one or more structures in a first process layer and one or more structures in a second process layer. Using machine learning, a first region is defined on the image that at least partially includes the one or more structures in the first process layer. Also using machine learning, a second region is defined on the image that at least partially includes the one or more structures in the second process layer. An overlay offset between the one or more structures in the first process layer and the one or more structures in the second process layer is calculated using the first region and the second region.

Abstract: Systems and methods of dispersion compensation in an optical device are disclosed. A holographic optical element may include a set of different holograms in a grating medium. Each hologram in the set may have a corresponding grating vector with a grating frequency and direction. The directions of the grating vectors may vary as a function of the grating frequency. Different holograms in the set may diffract light in a particular direction so that the light emerges from a boundary of the grating medium in a single given direction regardless of wavelength. A prism may be used to couple light into the grating medium. The prism may be formed using materials having dispersion properties that are similar to the dispersion properties of the grating material. The prism may have an input face that receives perpendicular input light. The prism may include multiple portions having different refractive indices.

Abstract: A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

Abstract: An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: The present application provides a temperature control method, an apparatus, an electronic device and a storage medium for an etching workbench. A real-time temperature of an etching workbench and a real-time temperature of a temperature control fluid are acquired firstly; then, a temperature control instruction is determined according to the real-time temperature of the etching workbench, the real-time temperature of the temperature control fluid and a limit temperature; and finally, in response to the temperature control instruction, a target operating temperature of the etching workbench is stabilized within a preset range by a circulating temperature control fluid loop.

Abstract: There is provided an electronic device including a light source module, an image sensor and a processor. The light source module projects a first pattern and a second pattern toward a moving direction. The image sensor captures an image of the first pattern and an image of the second pattern. The processor calculates one-dimensional depth information according to the image of the first pattern and calculates two-dimensional depth information according to the image of the second pattern.

Abstract: An optical element and a lithographic apparatus including the optical element. The optical element includes a first member having a curved optical surface and a heat transfer surface, and a second member that comprises at least one recess, the at least one recess sealed against the heat transfer surface to form at least one closed channel between the first member and the second member to allow fluid to flow therethrough for thermal conditioning of the curved optical surface. In an embodiment, one or more regions of the heat transfer surface exposed to the at least one closed channel are positioned along a curved profile similar to that of the curved optical surface.

Abstract: Embodiments provide image display systems and methods for one or more camera calibration using a two-sided diffractive optical element (DOE). More specifically, embodiments are directed to determining intrinsic parameters of one or more cameras using a single image obtained using a two-sided DOE. The two-sided DOE has a first pattern on a first surface and a second pattern on a second surface. Each of the first and second patterns may be formed by repeating sub-patterns that are lined when tiled on each surface. The patterns on the two-sided DOE are formed such that the brightness of the central intensity peak on the image of the image pattern formed by the DOE is reduced to a predetermined amount.

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: An immersion liquid supply and recovery device (2) with new-type pumping and drainage cavities includes pumping and drainage openings, pumping and drainage cavities, and sealed pumping and drainage channels, wherein the pumping and drainage cavities are in communication with an immersion flow field by means of the multiple pumping and drainage openings, and the pumping and drainage openings in communication with the different pumping and drainage cavities are circumferentially distributed in a crossed manner; at least two pumping and drainage cavities are provided, and each of the pumping and drainage cavities is in communication with an immersion liquid recovery system by one sealed pumping and drainage channel respectively; and the communication points of the pumping and drainage cavities and the sealed pumping and drainage channels are evenly arranged in the circumferential direction of the pumping and drainage cavities.

Abstract: In some embodiments, the present disclosure relates to a process tool that includes a lithography apparatus arranged over a wafer chuck and an immersion hood apparatus laterally around the lithography apparatus. The lithography apparatus includes a photomask arranged between a light source and a lens. The immersion hood apparatus comprises input piping, output piping, and extractor piping. The input piping is arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck. The output piping is arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck. The extractor piping is arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.

Abstract: A system for positioning, a stage system, a lithographic apparatus, a method for positioning and a method for manufacturing a device in which use is made of a stage system. The stage system has a plurality of air bearing devices. Each air bearing device has: a gas bearing body which has a free surface, a primary channel which extends through the bearing body and has an inlet opening in the free surface, and a secondary channel system which extends through the bearing body and which has a plurality of discharge openings in the free surface. The flow resistance in the secondary channel system can be higher than the flow resistance in the primary channel.

Abstract: An exposure machine and an exposure method are provided in some embodiments of the present disclosure. The exposure machine includes: a detection module, configured to detect whether there are attachments on the surface of a reticle; a cleaning device, configured to clean the attachments on the surface of the reticle; and an exposure module, configured to expose the reticle having no attachments detected.

Abstract: An exposure apparatus including an obtainment unit configured to obtain, for each of a plurality of exposure regions on a substrate, surface positions in a height direction in the exposure region, and a control unit configured to control, based on the obtained surface positions, driving of a substrate stage in the height direction, wherein the control unit obtains an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region from the obtained surface positions obtained, and for a first exposure region for which information related to the approximate surface does not exceed a predetermined range, controls the driving based on a correction value related to the driving obtained from an approximate surface approximately representing a cross-sectional shape of a surface of the exposure region that has been exposed prior to the first exposure region.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Abstract: Embodiments of a continuous dust accumulation monitoring system comprise an enclosure adapted for use in electrical hazardous locations, a sample area for collecting ambient dust, a dust accumulation sensor assembly installed in the enclosure configured to generate a signal based on the amount of ambient dust collected on the sample area and a circuit board within the enclosure configured to receive the signal from the dust accumulation sensor assembly. The continuous dust accumulation monitoring system may be connected to system control hardware.

Abstract: A system, computer program product, and method are presented for automatically executing chaos experiments on computing resources, applications, and services through automatically establishing and meeting core requirements for each chaos experiment. The method includes receiving a trigger signal configured to establish one or more condition s to execute one or more chaos experiments on at least a portion of one or more landing zones. The one or more chaos experiments are configured to operationally stress one or more of one or more infrastructure resources, one or more services, and one or more computing applications. The method also includes determining, automatically, the technical support coverage for the execution of the one or more chaos experiments. The method further includes executing, automatically, subject to the technical support coverage determination, the one or more chaos experiments.

Abstract: A projection device includes: a plurality of light sources arranged in a first direction; a spatial modulation element that modulates incident light into image information and emits the image information; a lens that changes an optical path of light emitted from each of the plurality of light sources such that the light emitted from each light source reaches substantially the same region of an incident surface of the spatial modulation element; and a first reflective optical member that deflects the light emitted from the lens toward the spatial modulation element, the first reflective optical member having a shape that reflects light emitted from the lens so as to be incident on an arbitrary point on the incident surface of the spatial modulation element at a predetermined reference incident angle.

Abstract: The present invention provides an exposure apparatus for performing scanning exposure on each of a plurality of shot regions in a substrate, comprising: a stage configured to hold the substrate; a driver configured to drive the stage; and a controller configured to control the scanning exposure on each of the plurality of shot regions while controlling the driver in accordance with a driving profile, wherein the driving profile includes a first section in which the stage is driven at a constant acceleration in a first direction, a second section in which the stage is driven at a constant acceleration in a second direction opposite to the first direction, and a connection section connecting the first section and the second section, and a period in which the scanning exposure is performed includes at least a part of the connection section.

Abstract: A substrate holder for use in a lithographic apparatus, the substrate holder including: a main body; a plurality of first burls provided on a first side of the main body and having end surfaces to support a substrate, wherein the first burls each include CrN; and a plurality of second burls provided on a second side of the main body.

Abstract: A lithographic apparatus includes an illumination system to produce a beam of radiation, a support to support a patterning device to impart a pattern on the beam, a projection system to project the patterned beam onto a substrate, and a metrology system that includes a radiation source to generate radiation, an optical element to direct the radiation toward a target, a detector to receive a first and second radiation scattered by the target and produce a first and second measurement respectively based on the received first and second radiation, and a controller. The controller determines a correction for the first measurement, an error between the correction for the first measurement and the first measurement, and a correction for the second measurement based on the correction for the first measurement, the second measurement, and the error. The lithographic apparatus uses the correction to adjust a position of a substrate.

Abstract: A wafer cleaning system and method are provided. A brush element is configured to clean a backside of the wafer. The backside has a clear area and an unclear area, and some contaminants are located in the unclear area. A control device performs a first cleaning process to the brush element when the brush element is located at the clear area, and the control device performs a second cleaning process when the brush element is located at the unclear area. The contaminants are cleaned by an enhanced cleaning process. Since the contaminants are cleaned, the backside of the wafer is flatter, and quality of the exposed photoresist on the wafer is improved.

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract: A LIDAR system is disclosed. The system has a laser light projection system to simultaneously project at least two laser light beams. The system also has a deflector to project the at least two laser light beams toward a field of view of the LIDAR system. Each of the at least two laser light beams has an energy density below an eye safe level. A total combined energy density of the at least two laser light beams is above an eye safe level. Further, the at least two laser light beams projected from the deflector are separated from one another by an angular spacing ranging from 2.5 mrad to 6 mrad.

Abstract: Imprint apparatus brings pattern region of mold into contact with imprint material on shot region of substrate, aligns the shot region and the pattern region with each other, and cures the imprint material. The apparatus includes light irradiator which irradiates the imprint material with light. In state that the imprint material on the shot region and the pattern region are in contact and the pattern region is flat, the light irradiator performs preliminary exposure of irradiating the imprint material with the light to increase viscosity of the imprint material. In the preliminary exposure, the light irradiator irradiates the imprint material with the light under illuminance distribution determined such that illuminance in contact beginning region where the imprint material and the pattern region begin to contact is lower than illuminance in certain region different from the contact beginning region.

Abstract: An apparatus comprising: a position monitoring system configured to determine the position of the substrate with respect to a projection system configured to project a radiation beam through an opening in the projection system and onto a substrate, wherein a component of the position monitoring system is located beneath the projection system in use; and a baffle disposed between the opening and the component.

Abstract: A number of unit cells of a digital-to-analog converter (DAC) may be simultaneously activated to generate an analog signal. However, while each unit cell may be generally the same, there may be variations such as non-linearity or noise in the analog output depending on which unit cells are activated for a given digital signal value. For example, as additional unit cells are activated for increased values of the analog signal, the fill order in which the unit cells are activated may affect the linearity/noise of the DAC. The decision units may be programmable to select which branches of the fractal DAC to activate, changing the fill order based on a fill-selection signal. The fill order may be set by a fill controller via the fill-selection signal to account for manufacturing variations, gradients in the supply voltage, output line routing, and/or environmental factors such as temperature.

Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

Abstract: A method of cleaning a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a first exposure device. The surface of the reticle is cleaned in the first exposure device by irradiating the surface of the reticle with an extreme ultraviolet (EUV) radiation for a predetermined irradiation time. After the cleaning, the reticle is transferred to a second exposure device for lithography operation.

Abstract: The present invention discloses a double-sided synchronous scanning device. A scanning channel is formed between two scanning components; two backlight plates are respectively used to provide backlight for an opposite-side scanning component and fixed with the same-side scanning component; one side of each backlight plate facing the scanning channel is provided with a light guide groove corresponding to a light inlet of the corresponding scanning component; a backlight source is arranged in the light guide groove. When the two scanning components work synchronously, because the backlight plates always need to provide backlight for the opposite-side scanning component, and the reflected light generated by the backlight plates on a scanned sample enters the light inlet of the same-side scanning component, which will affect the image scanning effect.

Abstract: Reflectometer, spectrophotometer, ellipsometer, and polarimeter systems having a supercontinuum laser source of coherent electromagnetic radiation over a range of between 400 nm to between 4400 nm and 18000 nm, and another source of wavelengths to provide between 400 nm and as high as at least 50000 nm; a stage for supporting a sample and a detector of electromagnetic radiation, wherein the source provides a beam of electromagnetic radiation which interacts with a sample and enters a detector system optionally incorporating a wavelength modifier, where the detector system can be functionally incorporated with combinations of gratings and/or combination dichroic beam splitter-prisms, which can be optimized as regards wavelength dispersion characteristics to direct wavelengths in various ranges to various detectors that are well suited to detect them.

Abstract: The present invention relates to an atomic force microscope for evaluating a surface of a sample, comprising a sample holder, having a first zone suitable for receiving the sample mounted in a stationary manner, a probe having a tip able to be positioned facing the surface of the sample, the microscope being configured to allow an adjustment of a position of the tip relative to the surface, and a support, the sample holder having at least one second zone, separate from the first zone and stationary relative to the support, the sample holder being deformable so as to allow a relative movement of the first zone with respect to the second zone, and the microscope comprising a detector able to detect a movement of the first zone relative to the second zone.

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

Abstract: In one embodiment, a method of fabricating a device having at least two features of differing heights comprises: depositing a resist over a substrate; determining a topography pattern for the at least two features of the device; determining an exposure pattern for the at least two features of the device; exposing a first area of the resist with a first dose of light, the first area corresponding to a first feature of the at least two features; exposing a second area of the resist with a second dose of light that is different from the first dose of light, the second area corresponding to a second feature of the at least two features; and developing the resist.

Abstract: Providing a substrate cleaning device and a substrate cleaning method having high detergency. Provided is a substrate cleaning device including: a substrate rotating mechanism that rotates a substrate; and a first nozzle and a second nozzle that eject an ultrasonic cleaning solution toward a predetermined surface of the substrate that is rotated, wherein the first nozzle and the second nozzle are held in one casing.

Abstract: An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.

Abstract: The present invention provides an exposure apparatus that exposes a substrate via an original, including an illumination optical system configured to illuminate the original, and a projection optical system configured to project a pattern of the original onto the substrate, wherein the illumination optical system illuminates the original by illumination light which includes a first portion that enters an incident pupil of the projection optical system and a second portion which enters a region outside the incident pupil, and the first portion and the second portion are separated from each other on an incident pupil plane of the projection optical system.

Abstract: A method of predicting deflection of a pellicle which will occur during movement of the pellicle in a lithographic apparatus, the method including receiving parameters regarding properties of the pellicle and receiving parameters regarding the expected movement of the pellicle. The parameters are applied to a model which predicts deflection of the pellicle as a function of those parameters. The model includes a plurality of sub-models which relate to different components of deflection of the pellicle. An output of the model may be used to predict.

Abstract: A method for process control in the manufacture of semiconductor devices including performing metrology on at least one Design of Experiment (DOE) semiconductor wafer included in a lot of semiconductor wafers, the lot forming part of a batch of semiconductor wafer lots, generating, based on the metrology, one or more correctables to a process used to manufacture the lot of semiconductor wafers and adjusting, based on the correctables, the process performed on at least one of; other semiconductor wafers included in the lot of semi-conductor wafers, and other lots of semiconductor wafers included in the batch.

Abstract: An optical lens for use in a media feed device, having a first lens surface and a second lens surface, wherein the first lens is provided to be facing an object to be observed and the second lens surface is provided to be facing away from the object to be observed. At least one channel opening onto the first lens surface is present, wherein the at least one channel runs through the optical lens and at least one section of a media line is formed in the at least one, channel or, if a plurality of channels are formed, at least one of the plurality of channels opens up outside a highest point in alignment with a line that is vertical with respect to the first lens surface and to the surface of the earth.

Abstract: A method of processing a wafer is provided. The method includes providing a reference plate below the wafer. The reference plate includes a reference pattern. The reference plate is imaged to capture an image of the reference pattern by directing light through the wafer. A first pattern is aligned using the image of the reference pattern. The first pattern is applied to a working surface of the wafer based on the aligning.

Abstract: Methods are provided for performing a surgical procedure using optical coherence tomography (OCT) including extracting lenticular material from within a capsular bag of the eye of a patient; placing a replacement lens within the capsular bag after extraction of the lenticular material from the capsular bag; acquiring a plurality of OCT images that visualize the placement of the replacement lens within the capsular bag; and determining from the plurality of OCT images a degree of contact of the posterior surface of the replacement lens with the posterior portion of the capsular bag.

Abstract: A projection system includes a first and second optical system including an optical element. The optical element has a first transmissive surface, a reflection surface, and a second transmissive surface. The second transmissive surface has a convex shape an aspheric shape. An effective light ray range of the second transmissive surface has a first end close to an optical axis of the reflection surface in a first axis direction along a first axis perpendicular to the optical axis and a second end far from the optical axis. A first radius of curvature at the first end is greater than a second radius of curvature at the second end, and a first center of curvature of the first radius of curvature is farther than a second center of curvature of the second radius of curvature from the first end.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion clement for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.