Abstract: A method of inspecting a substrate is disclosed. The method of inspecting a substrate, comprises: obtaining phase data per projecting part with regard to a substrate, by projecting pattern beam onto the substrate having a target object formed thereon through a plurality of projecting parts in sequence; obtaining height data per projecting part with regard to the substrate by using the phase data per the projecting part; compensating tilt of the height data by using the height data per projecting part; modifying the tilt-compensated height data per projecting part; and obtaining integrated height data by using the modified height data.

Abstract: A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.

Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.

Abstract: An apparatus includes a probe tip configured to contact the mask, a cantilever configured to mount the probe tip wherein the cantilever includes a mirror, an optical unit having a light source projecting a light beam on the mirror and a light detector receiving a reflected light beam from the mirror, and an electrical power supply configured to connect the probe tip. The apparatus further includes a computer system configured to connect the optical unit, the electrical power supply, and the stage. The electrical power supply provides an electrical current to the probe tip and heats the probe tip to a predetermined temperature. The heated probe tip repairs a defect by smoothing and reducing a dimension of the defect, and inducing structural deformations of multilayer that cancel out the distortion (of multilayer) caused by buried defects using the heated probe tip as a thermal source canning the defect.

Abstract: Various embodiments for substrate inspection are provided.

Abstract: The present invention provides a detection method which allows specific defects that would occur on a wafer surface to be detected more reliably. A method of detecting a specific defect of the present invention includes the steps of: acquiring a light point map which is in-plane position information of a light point detected in a position corresponding to a defect on a surface of a wafer by irradiating the surface of the wafer with light (S101); specifying a determination region where a specific defect is expected to be formed and a reference region which is a given region other than the determination region in the light point map, and calculating a ratio of a light point density of the determination region to a light point density of the reference region (S102); and determining whether or not the specific defect is formed based on the calculated ratio (S103).

Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Abstract: A defect inspecting apparatus inspects defects of a sample having a pattern formed on the surface. The defect inspecting apparatus is provided with a stage which has a sample placed thereon and linearly moves and turns; a light source; an illuminating optical system, which selects a discretionary wavelength region from the light source and epi-illuminates the sample surface through a polarizer and an objective lens; a detecting optical system, which obtains a pupil image, by passing through reflection light applied by the illuminating optical system from the surface of the sample through the objective lens and an analyzer which satisfies the cross-nichols conditions with the polarizer; and a detecting section which detects defects of the sample by comparing the obtained pupil image with a previously stored pupil image. Conformity of the pattern on a substrate to be inspected can be judged in a short time.

Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.

Abstract: A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.

Abstract: The present invention provides a detection apparatus for detecting a foreign particle on a substrate, including a plate having a first pattern on a first face, a second pattern laid out on a second face different from the first face, a driving mechanism configured to bring the substrate and the plate into contact with each other, a measurement unit configured to measure a relative position deviation between the first pattern and the second pattern in a state in which the substrate and the plate are in contact with each other, and a processing unit configured to execute processing for detecting a foreign particle on the substrate based on the position deviation measured by the measurement unit.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract: A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer.

Abstract: Provided herein is an apparatus, including a photon detector array; and a processing means configured for processing photon-detector-array signals corresponding to a first set of photons scattered from surface features of an article focused in a first focal plane and a second set of photons scattered from surface features of an article focused in a second focal plane, wherein the processing means is further configured for distinguishing foreign surface features of the article from foreign native features of the article.

Abstract: The three dimensional (3-D) locations of splices in pre-preg tows placed by an automatic fiber placement machine to form a laminated composite structure are mapped to allow visualization of alignment patterns in the splices.

Abstract: An appearance inspection apparatus analyzes a difference in detection characteristics of detection signals obtained by detectors to flexibly meet various inspection purposes without changing a circuit or software. The apparatus includes a signal synthesizing section that synthesizes detection signals from the detectors in accordance with a set condition. An input operating section sets a synthesizing condition of the detection signal by the signal synthesizing section, and an information display section displays a synthesizing map structured based on a synthesized signal which is synthesized by the signal synthesizing section in accordance with a condition set by the input operating section.

Abstract: The present invention provides an imprint apparatus for performing an imprint process of transferring a pattern onto a substrate by curing a resin on the substrate while the resin is in contact with a mold, and removing the mold from the cured resin, including a detection unit configured to detect a foreign particle existing on the substrate, wherein the detection unit includes an obtaining unit configured to irradiate a surface of the substrate with light, and obtain light from the surface of the substrate, and a specification unit configured to specify a shot region where a foreign particle existing on the substrate is positioned, based on the light obtained by the obtaining unit.

Abstract: An optical measurement apparatus including a light irradiation portion configured to irradiate light onto a sample flowing through a flow path in a detachable chip; a light detection portion configured to detect optical information emitted from the sample when irradiated with the light by the light irradiation portion; and a judgment portion configured to judge an exchange period of the chip based on the optical information detected by the light detection portion.

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract: An inspection apparatus includes a work stage part, an optical module, and an optical module moving part. The work stage part receives a board. The work stage part includes work stages disposed in parallel. The optical module includes a projecting part disposed over the board, an image capturing part disposed at a side portion of the projecting part to receive the grating pattern light and capture a reflection image, and an optical path changing part changing a path of the grating pattern light and guiding the grating pattern light to the image capturing part so that the grating pattern light is downwardly incident into the image capturing part. The optical module moving part is disposed over and coupled to the optical module to move the optical module. Thus, time may be reduced and a space may be secured, required for inspecting a board.

Abstract: A defect inspecting method is provided which comprises a pre-scan defect inspecting process including a pre-scan irradiating step for casting irradiation light onto the surface of a sample, a pre-scan detecting step for detecting the scattered lights, and a pre-scan defect information collecting step for obtaining information on preselected defects present on the sample surface on the basis of the scattered lights; a near-field defect inspecting process including a near-field irradiating step in which the distance between the sample surface and a near-field head is adjusted so that the sample surface is irradiated, a near-field detecting step for detecting near-field light response, and a near-field defect information collecting step for obtaining information on the preselected defects on the basis of the near-field light response; and a merging process for inspecting defects present on the sample surface by merging the pieces of information on the preselected defects.

Abstract: There is provided an exposure condition determining method for determining an exposure condition for an exposure-objective substrate having a plurality of semiconductor pattern features formed by predetermined exposure on a surface thereon, the method including, irradiating an illumination light onto a surface of a substrate, which has the pattern features, detecting a diffracted light from the plurality of semiconductor pattern features of the substrate irradiated with the illumination light, and determining the exposure condition based on a variation in brightness of the detected diffracted light.

Abstract: An inspecting method and apparatus for inspecting a substrate surface includes illuminating a light to the substrate surface having a film, detection of a scattered light or reflected light from a plurality of positions of the substrate surface to obtain a plurality of electrical signals, comparison of the plurality of electrical signals and a database which indicates a relationship between the electrical signals and surface roughness, and calculation of a surface roughness value based on the result of comparison.

Abstract: A system for inspecting a depth relative to a layer using a sensor with a fixed focal plane. A focus sensor senses the surface of the substrate and outputs focus data. In setup mode the controller scans a first portion of the substrate, receives the focus data and XY data, and stores correlated XYZ data for the substrate. In inspection mode the controller scans a second portion of the substrate, receives the focus data and XY data, and subtracts the stored Z data from the focus data to produce virtual data. The controller feeds the virtual data plus an offset to the motor for moving the substrate up and down during the inspection, thereby holding the focal plane at a desired Z distance.

Abstract: When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.

Abstract: The present invention provides an inspection method for inspecting defects of wafer surface. The method includes: encircling peripheral region of the wafer surface by a first light source set and a second light source set; using a control module to control the first light source set and the second light source set to irradiate the light alternately from different directions; using an image pick-up module to receive a scattered light image during each time when the first light source set or the second light source set irradiates the light on the wafer surface; and then using a process module to obtain an enhanced and clear defect image of wafer surface by processing each of the scattered light images.

Abstract: Systems and methods are provided for inspecting an object surface. An illumination source illuminates the object surface. An optic intercepts scattered light from the illuminated object surface and projects a real image of an area of the object surface. A sensor receives the projected real image. A computer system, coupled to the sensor, stores and analyzes the real image. The real image is processed to detect particles located on the object surface. This arrangement is particularly useful for detecting contaminants or defects on a reticle of a lithography device.

Abstract: In a method and apparatus for optically inspecting a magnetic disk, irradiating the surface of the sample with a light by rotating and moving the sample in the direction orthogonal to the center axis of the rotation, detecting the regular reflection light from the surface of the sample, detecting the scattered light in the vicinity of the regular reflection light from the surface of the sample by separating the scattered light from the regular reflection light, detecting the scattered light scattered in the direction at a higher angle with respect to the normal direction of the surface of the sample, and detecting the defects by processing the detection signal of the regular reflection light, the detection signal of the scattered light in the vicinity of the regular reflection light, and the detection signal of the scattered light in the high angle direction.

Abstract: A system may include a support configured to rotatably support a wafer. The system may also include an imager for generating an image of a wafer, where the image includes a first coordinate reference. The system may also include a profiler for generating a profile of the wafer, where the profile includes a second coordinate reference. The system may further include control programming for locating at least one structural feature of an edge of the wafer recognizable by both the imager and the profiler for allowing the first coordinate reference to be mapped to the second coordinate reference. The wafer used in calibration may have discrete edge features detectable in an edge imager and in an edge profiler.

Abstract: Setting a spatial filter requires repeatedly confirming a scan image through visual inspection by an operator and adjusting the spatial filter. A setting state is also dependent on the operator. Therefore, in the present invention, a scattered light image (beam image) and a diffracted light image (Fourier image) are simultaneously observed, and an intensity profile of the scattered light image (beam image) and an intensity profile of the diffracted light image (Fourier image) are simultaneously monitored. A field of view of a diffracted light image is scanned with only one spatial filter, and a state change with respect to the intensity profiles in the absence of insertion of the spatial filter is detected. A setting condition for a spatial filter is determined on the basis of the detected state change.

Abstract: A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: An observation device (1) for observing a portion near the end of a wafer (10), comprising an imaging section (40) for Imaging an image near the end of a wafer (10) from the extending direction of the wafer (10), and an image processing section (50) for detecting the edge of a film formed on the surface of the wafer (10) is further provided, as an illumination section for illuminating a portion near the end of a wafer (10), with an epi-illumination source (48) for illuminating a portion near the end of a wafer (10) via an observation optical system (41), and a diffusion illumination source (31) arranged to face the surface of the wafer (10) and illuminate a portion near the end of a wafer (10) using diffused light.

Abstract: One of the broader forms of the present disclosure involves a method of enhanced defect inspection. The method includes providing a substrate having defect particles and providing a fluid over the substrate and the defect particles, the fluid having a refractive index greater than air. The method further includes exposing the substrate and the defect particles to incident radiation through the fluid, and detecting, through the fluid, radiation reflected or scattered by the defect particles.

Abstract: A defect inspecting apparatus inspects defects of a sample having a pattern formed on the surface. The defect inspecting apparatus is provided with a stage which has a sample placed thereon and linearly moves and turns; a light source; an illuminating optical system, which selects a discretionary wavelength region from the light source and epi-illuminates the sample surface through a polarizer and an objective lens; a detecting optical system, which obtains a pupil image, by passing through reflection light applied by the illuminating optical system from the surface of the sample through the objective lens and an analyzer which satisfies the cross-nichols conditions with the polarizer; and a detecting section which detects defects of the sample by comparing the obtained pupil image with a previously stored pupil image. Conformity of the pattern on a substrate to be inspected can be judged in a short time.

Abstract: A method is provided for characterizing a mask having a structure, comprising the steps of: —illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, —capturing said diffraction pattern, —determining the intensities of the maxima of the adjacent diffraction orders, —determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided.

Abstract: To process a signal from a plurality of detectors without being affected by a variation in the height of a substrate, and to detect more minute defects on the substrate, a defect inspection device is provided with a photoelectric converter having a plurality of rows of optical sensor arrays in each of first and second light-collecting/detecting unit and a processing unit for processing a detection signal from the first and the second light-collecting/detecting unit to determine the extent to which the positions of the focal points of the first and the second light-collecting/detecting unit are misaligned with respect to the surface of a test specimen, and processing the detection signal to correct a misalignment between the first and the second light-collecting/detecting unit, and the corrected detection signal outputted from the first and the second light-collecting/detecting unit are combined together to detect the defects on the test specimen.

Abstract: A method and an inspection system may be provided. The inspection system may include (a) a hybrid sensor that may include a monochromatic portion that is arranged to obtain a monochromatic image of a first area of an object; a multiple-color portion that is arranged to obtain a multi-colored image of a second area of the object; wherein the monochromatic portion comprises monochromatic sensing elements that sense radiation of a same frequency band; wherein the multiple-color portion comprises color sensing elements of different types, wherein different types of color sensing elements are associated with different frequency bands; (b) a storage element arranged to store the monochromatic image and the multiple-color image; and (c) a defect detection module arranged to detect defects by processing at least one of the monochromatic image and the multiple-color image.

Abstract: In a first platen gap, a light emitting amount is decided to obtain a light receiving amount for inspection as a first light emitting amount for inspection. Subsequently, in a second platen gap, a light emitting amount is decided to obtain a light receiving amount for inspection as a second light emitting amount for inspection. An inspection on dot forming is performed, using a smaller light emitting amount for inspection between the first and second light emitting amounts for inspection, and using the platen gap in which the smaller light emitting amount for inspection is decided.

Abstract: The present invention provides an evaluation substrate for evaluating a foreign object defect included in an organic material, a defect examination method and defect detection device. The evaluation substrate of the present invention includes a substrate, a first film arranged on the substrate, and a second film arranged on the first film, wherein a film containing an organic material is formed on the second film; the first film being set lower than an etching rate of the second film with respect to an etchant used in etching the second film, the first film having the same or a smaller detection lower limit value of an optically detectable defect than a detection lower limit value of a defect of the second film; and a thickness of the second film being set to a value near an optically measured lowest or minimum Haze value.

Abstract: Disclosed is a final defect inspection system, which including a host device, a microscope, a bar code scanner, a support tool, a signal transceiver and an electromagnetic pen. The bar code scanner scans a bar code on a circuit board provided on the support plate. The host device selects data and a circuit layout diagram from the database corresponding to the bar code. The signal transceiver and the electromagnetic pen are electrically connected to the host device. The electromagnetic pen is used to make a mark on a scrap region of the circuit board where any defect is visually found through the microscope. The signal transceiver receives and transmits the positions of the mark to the host device such that the host device calculates the coordinate of a scrap region based on a relative position between an original point and the positions of the mark.

Abstract: The present invention provides a method and apparatus for inspecting a surface of a substrate. The apparatus includes: a rotatable stage on which a substrate to be inspected is placed; an inspection optical system having an illumination light source for emitting light to a substrate placed on the stage and a detector for detecting light from the substrate which is irradiated with the light from the illumination light source; an A/D converter for amplifying and A/D converting signals output from the detector in the inspection optical system; and a defect detector for detecting defects in a surface of the substrate by processing signals output from the detector and converted by the A/D converter and classifying the defected defects. The defect detector extracts micro defects in the surface of the substrate by processing the signals output from the detector, and detects linear defects existing discretely in a linear region.

Abstract: A data processing and controlling portion calculates the amounts of coordinate deviations between the artificial defects on the standard sample and the detected defects, checks the sensitivity (instrumental sensitivity (luminance, brightness, or the like)), and proceeds to execution of hardware corrections. If the coordinate deviation is less than a certain value, software corrections are carried out. In the case of the software corrections, coordinate corrections are made for the whole standard sample. The amounts of coordinate deviations are computed and checked. If the amounts of coordinate deviations are outside a tolerance, coordinate corrections are made for each region obtained by dividing the standard sample.

Abstract: An inspection system (9) includes an idler wheel (61) that is coupled to a fabrication system (8) and is in contact with a backing layer (65) of an applied material (64), A rotation sensor (63) monitors the idler wheel (61) and generates a rotational signal. A controller (24) is coupled to the rotation sensor (63) and determines a characteristic of one or more flaws and FOD (19) on a composite structure (12) in response to the rotation signal.

Abstract: In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.

Abstract: A method for inspecting an object and an inspection system, the system includes: at least one primary light source followed by at least one illumination path imaging lens adapted to direct at least one primary light beam towards an area of an inspected object; at least one secondary light source followed by at least one collimating component and at least one concentrating component adapted to direct at least one secondary light beam towards the area; wherein the at least one primary light beam and the at least one secondary light beam illuminate the area such that substantially each point within an imaged portion of the area is illuminated over a large angular range characterized by substantially uniform intensity; a collection path that comprises an image sensor, a beam splitter path and a collection path imaging lens; wherein the beam splitter is positioned between the area and between the collection path imaging lens; and wherein the at least one collimating component defines a central aperture through whi

Abstract: A method for verifying the internal microstructure of interconnects in flip-chip applications includes providing a microelectronic assembly comprising the following: a substrate hosting an array of flip-chip attach pads and one or more process control pads; a flip chip having an array of solder bumps in contact with the array of flip-chip attach pads; and one or more representative solder bumps contacting the one or more process control pads. The representative solder bumps have a substantially similar or identical chemical composition as the array of solder bumps. A reflow cycle is then applied to the microelectronic assembly to melt and solidify the array of solder bumps on the flip-chip attach pads and melt and solidify the representative solder bumps on the process control pads. The surface texture of the representative solder bumps is then optically inspected to determine an internal microstructure of the array of solder bumps.

Abstract: An optical equipment for inspecting and addressing a specimen is disclosed. The optical equipment comprises an optical device and a processing module. The optical device comprises a light source, a sample inspecting device and an address detecting device. The sample inspecting device comprises a first objective lens and a first detector. A beam is focused on a sample placed in an inspected site of a specimen by the first objective lens. The address detecting device comprises a second objective lens and a second detector. A beam is focused on the address coding site by the second objective lens. The processing module controls the beam to be focused on the sampling points of the inspected site to generate first optical signals, and simultaneously controls the beam of the light source to be focused on the corresponding address codes of the address coding site to generate second optical signals.

Abstract: An inspecting apparatus and method including first and second illuminating units for illuminating a surface of a specimen to be inspected with different incident angles and first and second detecting optical units arranged at different elevation angle directions to the surface of the specimen for detecting images of the specimen illuminated by the first and second illuminating units.

Abstract: A method and equipment which includes an illustrated-spot illumination-distribution data table for storing an illumination distribution within an illustrated spot and which calculates a coordinate position for a particle or a defect and the diameter of the particle on the basis of detection light intensity data about the particle or defect and the illustrated-spot illumination-distribution data table. Thus, even when the illumination distribution within the illustrated spot based on an actual illumination optical system is not a Gaussian distribution, the calculation of the particle diameter of the detected particle or defect and the calculation of a coordinate position on the surface of an object to be inspected can be attained with an increased accuracy.