Abstract: A substrate inspection apparatus for inspecting a substrate, on which a measurement object is formed, is shown. The substrate inspection method includes measuring a substrate, on which a measurement object is formed, generating a plane equation of the substrate, and acquiring a region of the measurement object formed on the substrate. After, by considering a height of measurement object a region of the measurement object is converted into a substrate plane by plane equation,. Then, the measurement object is inspected based on a region of the measurement object converted into a substrate plane by plane equation and a region of the measurement object by reference data. Therefore, an offset value of a measurement object is acquired according to a tilted pose of the substrate, and a distortion of measurement data is compensated by using the offset value, to improve a measurement credibility of a measurement object.

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: A system for performing alignment of two wafers is disclosed. The system comprises an optical coherence tomography system and a wafer alignment system. The wafer alignment system is configured and disposed to control the relative position of a first wafer and a second wafer. The optical coherence tomography system is configured and disposed to compute coordinate data for a plurality of alignment marks on the first wafer and second wafer, and send that coordinate data to the wafer alignment system.

Abstract: An aspect of the invention provides a defect inspection apparatus being able to accurately inspect a micro foreign matter or defect at a high speed for an inspection target substrate in which a repetitive pattern and a non-repetitive pattern are mixed. In a foreign matter anti-adhesive means 180, a transparent plate 187 is placed on a placement table 34 through a frame 185. In the foreign matter anti-adhesive means 180, a shaft 181 which is rotatably supported by two columnar supports 184 fixed onto a base 186 is coupled to a motor 182 by a coupling 183. The shaft 181 is inserted into a part of a frame 185 between the two columnar supports 184 such that the frame 185 and the transparent plate 187 are turnable about the shaft 181. Therefore, the whole of the frame 185 is opened and closed in a Z-direction about the shaft 181, and a wafer 1 on the placement table 34 can be covered with the frame 185 and the transparent plate 187.

Abstract: A method and apparatus of inspecting a defect of a surface of a sample in which a laser beam is irradiated on a sample surface so that at least a part of an illumination field of the laser beam illuminates a first area of the sample surface, a plurality of scattered light rays from the first area caused by the irradiation is detected with a plurality of detectors, detection errors of inclination of an illumination apparatus and a sensor for the plurality of scattered light rays detected by the plurality of detectors are corrected, at least one of adding and averaging the corrected plurality of scattered light rays, and a defect on the sample surface is determined based on the plurality of scattered light rays in accordance with the correction of errors of inclination of the illumination apparatus and the sensor.

Abstract: A defect inspection apparatus for inspecting a surface of a sample includes a stage for holding the sample, an illumination optical system that irradiates a laser beam to form a linear illuminated area on the surface of the sample, a detection optical system, and a signal processing system. The detection optical system includes a detector device having a plurality of pixels for detecting light scattered from the linear illuminated area of the surface of the sample, and that outputs in parallel a plurality of detection signals having mutually different sensitivities acquired from the plurality of pixels of the detector device. The signal processing system selects an unsaturated detection signal from the plurality of detection signals and detects a defect in accordance with the selected detection signal.

Abstract: A method and apparatus for detecting defects are provided for detecting defects or foreign matter on an object to be inspected. The apparatus includes a movable stage for mounting a specimen, an illumination system for irradiating a circuit pattern with light from an inclined direction, and an image-forming optical system for forming an image of an irradiated detection area on a detector from the upward and oblique directions. With this arrangement, diffracted light and scattered light caused on the circuit pattern through the illumination by the illumination system is collected. A spatial filter is provided on a Fourier transform surface for blocking the diffracted light from a linear part of the circuit pattern. The scattered and reflected light received by the detector is converted into an electrical signal. The converted electrical signal of one chip is compared with that of the other adjacent chip.

Abstract: Methods for real-time contamination, environmental, or physical monitoring of a photomask. An attribute of a photomask is monitored using a sensor of an electronics package attached to the photomask. The methods further include generating one or more sensor signals relating to the monitored attribute with the sensor and transmitting the one or more sensor signals from the electronics package to a control system.

Abstract: A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image.

Abstract: A specified position in an array structure in which a reference pattern is displayed repetitively through reference pattern counting is identified. In an array structure image, the pattern detection estimating area generated from a starting point, the address of the starting point, and a unit vector are compared with a pattern detected position found in pattern matching with the reference pattern image, to execute pattern counting while determining correct detection, oversights, wrong detection, etc. Array structure images are photographed sequentially while moving the visual field with the use of an image shifting deflector to continue the pattern counting started at the starting point to identify the ending point specified with an address. If the ending point is not reached only with use of the image shifting deflector, the visual field moving range of the image shifting deflector is moved with use of a specimen stage.

Abstract: A surface inspection apparatus and a surface inspection method aim to securely deal with finer repetition pitch without shortening the wavelength of illumination light. To this end, the apparatus includes a unit illuminating repetitive pattern(s) formed on the substrate surface to be inspected with linearly polarized light, a unit setting to an oblique angle an angle between the direction of an intersecting line of a vibration plane of the linearly polarized light on the substrate surface and the repetition direction of repetitive pattern(s), a unit extracting a polarized light component perpendicular to the vibration plane of the linearly polarized light, from light having been emitted from the repetitive pattern(s) in a specular direction, and a unit detecting a defect of the repetitive pattern(s) according to the light intensity of the polarized light component.

Abstract: A rotary actuator position sensor comprises a target with a target surface coupled to a rotatable shaft and a sensor positioned to face the target surface. The target surface is configured to vary the distance between the target surface and the position sensor as the shaft is shifted from one rotational position to another. The sensor provides an analog output signal that corresponds to distance to the target and therefore to the rotational position of the shaft. A controller processes a signal corresponding to the sensor output signal to determine the rotational position. The controller can control the rotation of the shaft from one rotational position to another. The position sensor can be used in a wafer processing system with the controller also controlling movement of a wafer cassette holder into and out of wet tanks and between tanks. The controller can also control an optional agitator and front to back and back to front movement of the shaft.

Abstract: One of the broader forms of the present disclosure involves a method of enhanced defect inspection. The method includes providing a substrate having defect particles and providing a fluid over the substrate and the defect particles, the fluid having a refractive index greater than air. The method further includes exposing the substrate and the defect particles to incident radiation through the fluid, and detecting, through the fluid, radiation reflected or scattered by the defect particles.

Abstract: A pattern inspection apparatus is provided to compare images of regions, corresponding to each other, of patterns that are formed so as to be identical and judge that non-coincident portions in the images are defects. The pattern inspection apparatus is equipped with an image comparing section which plots individual pixels of an inspection subject image in a feature space and detects excessively deviated points in the feature space as defects. Defects can be detected correctly even when the same patterns in images have a brightness difference due to a difference in the thickness of a film formed on a wafer.

Abstract: Wafer edge inspection approaches are disclosed wherein an imaging device captures at least one image of an edge of a wafer. The at least one image can be analyzed in order to identify an edge bead removal line. An illumination system having a diffuser can further be used in capturing images.

Abstract: A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.

Abstract: An inspection region is specified using the design information to perform region division for measurement through a scatterometry method. The obtained detection data is classified by pattern into a periodic region and a non-periodic region. A spectroscopic characteristic is detected by an optical sensor to extract features. The extracted features are compared with features stored in a feature map database for each region to evaluate a state of a patterned medium.

Abstract: A method of evaluating a silicon wafer includes obtaining first surface distribution information indicating an surface distribution of photoluminescence intensity on a surface of a silicon wafer; after obtaining the first surface distribution information, subjecting the silicon wafer to a thermal oxidation treatment, and then obtaining second surface distribution information indicating an surface distribution of photoluminescence intensity on the surface of the silicon wafer; obtaining difference information for the first surface distribution information and third surface distribution information, with the third surface distribution information having been obtained by correcting the second surface distribution information with a correction coefficient of less than 1; and based on the difference information obtained, evaluating an evaluation item selected from the group consisting of absence or presence of oxygen precipitates and surface distribution of oxygen precipitates in the silicon wafer being evaluated.

Abstract: An apparatus for inspecting a substrate surface is provided, which includes illumination optics for irradiating the substrate surface linearly with rectilinearly polarized light from an oblique direction, detection optics for acquiring images of the substrate surface, each of the images being formed by the light scattered from the light-irradiated substrate surface, and means for comparing an image selected as an inspection image from the plurality of substrate surface images that the detection optics has acquired to detect defects, and another image selected from the plural images of the substrate surface as a reference image different from the inspection image; the illumination optics being formed with polarization control means for controlling a polarizing direction of the light according to a particular scanning direction of the substrate or a direction orthogonal to the scanning direction.

Abstract: A detector detects radiation from a mask to form an image, but the focal plane of the image is in front of the mask. Any particles arranged on the mask will be in focus. However, the pattern on the mask will be out of focus. It is therefore possible to detect the existence and location of particles on a mask having an arbitrary pattern. The depth of field of the detector is small and the focal plane is no further from the surface of the patterning device than two times the depth of field.

Abstract: A system and method determine an approximate structure of an object on a substrate. This may be applied in model based metrology of microscopic structures to assess critical dimension or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, including the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.

Abstract: A surface inspection apparatus for observing an edge portion of an object to be inspected includes an illumination device that irradiates an illumination light to the edge portion; and an observation device that forms an image of an observation region of the edge portion illuminated with the illumination light. The illumination device emits a first irradiation beam and a second irradiation beam as the illumination light. The first irradiation beam is incident at approximately right angles to the edge portion for compensating brightness of the image and the second irradiation beam is obliquely incident laterally to the observation region of the edge portion for generating a shadow depending on a surface state of the observation region.

Abstract: An inspection method and an inspection system, the inspection system includes: (i) a first group of sensors, for sensing light components of a first light band of an image of an area of an inspected object, and for generating first detection signals reflecting sensed light components of the first light band; (ii) a second group of sensors, for sensing light components of a second light band of the image of the area of the inspected object, wherein the second light band differs from the first light band, and for generating second detection signals reflecting sensed light components of the second light band; (iii) optics, for projecting the image of the area of the inspected object towards the first group of sensors and towards the second array of sensors; and (iv) a processing unit, coupled to the first and second group of sensors, for detecting defects based on the first or second detection signals.

Abstract: A defect inspection apparatus for inspecting defects on an inspecting object includes an illuminator which irradiates a beam of light on the inspecting object, a photo-detector which detects rays of light from the inspecting object due to the irradiation of the light beam by the illuminator, a defect detector which detects a defect by processing a signal obtained through detection by the photo-detector, a characteristic quantity calculator which calculates a characteristic quantity related to a size of the defect, and a defect size calculator which uses a relation between size and characteristic quantity which is calculated by an optical simulation and calculates a size of the detected defect.

Abstract: An inspection method and an inspection device, or apparatus each capable of conducting composition analysis of a defect detected by elastic or stokes scattered light, an inspection surface or defect on the surface of the inspection surface, or a defect on the surface of the inspection object and its internal composition. A surface inspection method for optically detecting elastic or stokes scattering or inelastic or anti-stokes scattered light from inside the surface of the inspection object, for detecting existence of defects of the inspection object and features of the defects, for detecting positions of the detected defects on the surface of the inspection object, classifying and analyzing the detected defects in accordance with their features on the basis of the positions of the defects and the features of the defects or the classification result of the defects.

Abstract: There are provided a surface inspection device and a surface inspection method which can inspect a surface of a test object with uniform detection sensitivity. A surface inspection device includes a test object moving stage, a lighting device, an inspection coordinate detection device, a light detector, an A/D converter, and a foreign object/defect determination unit. The lighting device is configured to change a dimension of a light spot in a circumferential direction based on a position of the light spot in a radial direction obtained by the inspection coordinate detection device. The density of irradiation light intensity of the light spot is made constant while the light spot is being moved for scanning between an outer peripheral portion and a central portion on the test object.

Abstract: The invention is directed to find a false defect from defect candidates and obtain a threshold with which the false defect can be eliminated by the smallest number of review times. Defect candidates are reviewed and selected as a defect or a false defect. By deleting a defect candidate having a characteristic quantity equal to or less than that of the false defect from a map or displaying it in another sign, the false defect can be determined visually. Since the defect candidate having the characteristic quantity equal to or less than that of the selected false defect is deleted from the map or displayed in another sign, the defect candidates unnecessary to set a threshold are not reviewed. The number of defect candidates to be reviewed can be largely reduced as compared with that in the conventional technique. Further, by repeating the above work, the threshold is automatically calculated, and an inspection result map with the threshold is displayed, so that a re-inspection is unnecessary.

Abstract: Provided is a method for processing a wafer edge portion using photolithograph equipment. The method includes placing a wafer on a support plate, inspecting a bead removal state of an edge portion of the wafer placed on the support plate, and exposing the edge portion of the wafer placed on the support plate to light. The inspecting of the bead removal state is performed by capturing first images from the wafer placed on the support plate and inspecting the first images.

Abstract: Method of determining defects in a substrate, the method comprising: scanning a scan range of the substrate with a sensor, the sensor projecting a beam of radiation on the substrate; measuring the fraction of the intensity of the radiation reflected from different substrate areas along the scan range; determining the variations of the measured fraction across the scan range; determining from the variations whether any defects are present in the substrate.

Abstract: A defect inspection apparatus emits light to a test object, detects reflected of scattered light from the test object and detects a defect in the test object The apparatus comprises a temperature-controlled part accommodating section that accommodates parts having a need for controlling a temperature, which is out of a plurality of parts in the defect inspection apparatus. A first temperature measuring instrument measures a temperature in the temperature-controlled part accommodating section; and a temperature control unit controls a temperature of the interior of the temperature-controlled part accommodating section at a prescribed temperature according to the temperature measured by the first temperature measuring instrument. Accordingly, a defect inspection apparatus can efficiently perform temperature control without involving an enlarged size can be achieved.

Abstract: An apparatus for inspecting an edge of a substrate. A light source produces a light beam, and a two-dimensional beam deflector receives the light beam and creates a semi-annular scanning beam. A first flared parabolic surface receives the semi-annular scanning beam and directs the semi-annular scanning beam onto the edge of the substrate, thereby creating specularly reflected light from the edge of the substrate. A second flared parabolic surface receives and directs the specularly reflected light to a detector. The detector receives the directed specularly reflected light and produces signals. An analyzer analyzes the signals and detects defects at the edge of the substrate.

Abstract: An inspection device for inspecting defects of an inspection object including a light source for irradiating a luminous flux to the inspection object; an optical system for guiding reflected light from the inspection object; a photoelectric image sensor having a plurality of photoelectric cells arranged, for converting the light guided to detection signals; a detection signal transfer unit having channels each constituted by a signal correction unit, a converter and an image formation unit, and corresponding to each of a plurality of regions formed by dividing the photoelectric image sensor, respectively; and an image synthesis unit for forming an image of the surface of the object by synthesizing partial images outputted; the inspection device inspecting defects of the object by processing the synthesized image; whereby it becomes possible to correct a detection signal from said photoelectric cell close to a predetermined reference target value.

Abstract: A producing method of a wired circuit board includes the steps of applying light from above the wired circuit board toward the wired circuit board, and sensing pattern reflected light which is the light reflected by a conductive pattern, table reflected light which is the light reflected by a support table via an insulating layer exposed from the conductive pattern, and foreign-matter reflected light which is the light reflected by a foreign matter present on the insulating layer to inspect the conductive pattern and the foreign matter based on a contrast therebetween. A reflectance of the table reflected light is in a range of 30 to 70%, and a reflectance of the foreign-matter reflected light is in a range of not more than 10%.

Abstract: An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer.

Abstract: When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.

Abstract: A wafer surface inspection method and apparatus of high sensitivity, and free from performance degradation in terms of cleanliness, coordinate repeatability of foreign particles and the like. Gas for cooling is sprayed onto a laser irradiation position on the wafer surface to prevent an increase in temperature of the foreign particles and to suppress break-down of the foreign particles.

Abstract: A pattern inspection apparatus includes a light source, a stage configured to mount thereon a substrate with a pattern formed thereon, a first laser measuring unit configured to measure a position of the stage by using a laser beam, a sensor configured to capture a pattern image obtained from the pattern, formed on the substrate, irradiated by light from the light source, an optical system configured to focus the pattern image on the sensor, a second laser measuring unit configured to measure a position of the optical system by using a laser beam, a correction unit configured to correct a captured pattern image by using a difference between the position of the stage and the position of the optical system, and an inspection unit configured to inspect whether there is a defect of the pattern by using a corrected pattern image.

Abstract: An inspection system may include, but is not limited to: an illumination subsystem for directing light to an inspection specimen comprising: a power attenuator subsystem configured for altering the power level of a light beam emitted by the illumination subsystem; and a power attenuation control subsystem configured to provide control signals to the power attenuator subsystem according to a detected level of light scattering by the inspection specimen upon illumination by the illumination subsystem. A method for scatterometry inspection may include, but is not limited to: directing light having a power level to an inspection specimen from a light source; detecting light scattered from the specimen; and modifying a power level of one or more intermediate light beams within the light source according to a level of light scattering by the specimen upon illumination by the light source.

Abstract: The present invention is to lessen work burden on a user, to eliminate determination error, to prevent a substrate from being damaged, and to prevent prolonged working time by automatically determining whether or not a particle to be removed is present. A particle inspection and removal apparatus of the present invention includes a particle information acquisition section acquiring particle information on a particle adhering onto a substrate surface, a particle removal section removing the particle adhering onto the substrate surface, a comparison section comparing a threshold set for each of regions of the substrate surface with the particle information on each of the region obtained by the particle information acquisition section, and a particle removal control section controlling the particle removal section to remove the particle on the substrate surface based on a comparison result of the comparison section.

Abstract: In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.

Abstract: A surface defect inspection apparatus includes a light source that emits light to a first position on a surface of a target at an angle inclined with respect to the surface of the target, a first photodetector that detects first reflected light of the light from the light source, the first reflected light being reflected at the first position, a second photodetector that detects second reflected light of the light from the light source, the second reflected light being reflected at a second position, the second position being closer to the light source than the first position and being separated from the surface of the target by a given distance, and a determining unit that determines whether or not foreign matter is present on the surface of the target on a basis of detection results obtained from the first photodetector and the second photodetector.

Abstract: In an inspection subject substrate, there is a problem that a defect signal is overlooked due to scattered light from a pattern and sensitivity decreases in an irregular circuit pattern part. The inventors propose a defect inspection method, characterized by comprising: an illumination step of guiding light emitted from a light source to a predetermined area on an inspection subject substrate under a plurality of predetermined optical conditions; a detection step of obtaining an electric signal by guiding scattered light components propagating in a predetermined range of azimuthal angle and in a predetermined range of elevation angle to a detector for each of a plurality of scattered light distributions occurred correspondingly to the plurality of optical conditions in the predetermined area; and a defect determination step of determining a defect based on the plurality of electric signals obtained in the detection step.

Abstract: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

Abstract: A device detects underfill voids and solder ball defects via laser generation and laser detection of an ultrasonic wave at the top surface of flip chips. High resolution is provided by using small laser spot sizes and closely-spaced laser beams of wavelengths that are absorbed near the surface of the semiconductor. Improved spatial resolution and rejection of unwanted scattered waves can be attained by limiting the time frame of the ultrasonic waveform to the time required for the first longitudinal wave reflection from the bottom of the flip chip. The laser beam spacing can be reduced by using probe and detection beams of different wavelengths. Resolution of less than 100 ?m features was demonstrated for silicon flip chips.

Abstract: According to one embodiment, a method of detecting a defect of a semiconductor exposure mask includes acquiring a background intensity from a surface height distribution of the mask, acquiring a standard background intensity distribution from the background intensity, making light of an arbitrary wavelength incident on the mask, and acquiring an image at a position of interest of the mask, acquiring background intensity raw data, based on a signal intensity of the acquired image at the position of interest and a mean value of image intensity data in a peripheral area of the position of interest, finding a correction coefficient of the signal intensity, based on a ratio of the background intensity raw data to the standard background intensity distribution, correcting the signal intensity by multiplying the signal intensity.

Abstract: In a defect inspection system using a plurality of detectors such as an upright detector and an oblique detector, if illumination light and wafer height are adjusted to the detection field of view of one detector, a defocused image is detected by other remaining detectors, resulting in degradation of the detection sensitivity. The present invention solves this problem. When a plurality of detectors such as an upright detector and an oblique detector are used in the defect inspection system, the reduction of the inspection sensitivity can be prevented by correcting the field positions of the other remaining detectors with respect to the field of view of the one detector. Further, the variation in optical axis for each inspection system due to the variation in parts and assembly errors can be reduced.

Abstract: A measuring apparatus measuring a surface shape of a target includes a projection optical system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, an optical imaging system to cause the reflected line beam to form an image on a receiving surface of the imaging device to acquire a shape of the line beam on the target, and a splitting mechanism to split the reflected line beam so as to acquire the shape of the line beam on the target at different positions in an extending direction of the line beam and guide the split reflected line beams to the imaging device. A plurality of segments are set on the receiving surface while each segment in which at least one region is set as a reception region is partitioned into a plurality of regions, and the optical imaging system causes the split reflected line beams to form images on the reception regions in the different segments, respectively.

Abstract: A method and apparatus for detecting defects are provided for detecting defects or foreign matter on an object to be inspected. The apparatus includes a movable stage for mounting a specimen, an illumination system for irradiating a circuit pattern with light from an inclined direction, and an image-forming optical system for forming an image of an irradiated detection area on a detector from the upward and oblique directions. With this arrangement, diffracted light and scattered light caused on the circuit pattern through the illumination by the illumination system is collected. A spatial filter is provided on a Fourier transform surface for blocking the diffracted light from a linear part of the circuit pattern. The scattered and reflected light received by the detector is converted into an electrical signal. The converted electrical signal of one chip is compared with that of the other adjacent chip.

Abstract: The present invention provides an imprint apparatus for performing an imprint process of transferring a pattern onto a substrate by curing a resin on the substrate while the resin is in contact with a mold, and removing the mold from the cured resin, including a detection unit configured to detect a foreign particle existing on the substrate, wherein the detection unit includes an obtaining unit configured to irradiate a surface of the substrate with light, and obtain light from the surface of the substrate, and a specification unit configured to specify a shot region where a foreign particle existing on the substrate is positioned, based on the light obtained by the obtaining unit.