Abstract: A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract area.

Abstract: A inspecting device for a semiconductor wafer comprises: a holding unit which holds a wafer; an aligner unit which detects a cutout position and a center position of the wafer held by the holding unit and obtains position determining data of the wafer; an observing unit for magnifying and observing fine patterns on the wafer, the observing unit being disposed at a position where the wafer held by the holding unit can be observed; a moving unit which relatively moves the holding unit with respect to the observing unit; and a control unit which controls the moving unit to move the holding unit based on the obtained position data so that the fine patterns at a desired position can be observed.

Abstract: A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask.

Abstract: The invention concerns a method for evaluating pattern defects on a wafer surface, comprising the following steps: acquiring the surface data of a plurality of individual image fields (4) of a series-produced wafer (1); storing the data in a reference data set and making it available as reference data for the inspection of further wafers of the same series; inspecting, successively in time, the individual image fields (4) on the surface of a wafer (1) presently being examined; retrieving from the reference data set a reference datum corresponding to the respective individual image field (4) presently being inspected; comparing the surface of each individual image field (4) currently being inspected to the corresponding reference datum; if one or more deviations are identified, subsequently classifying the deviations into critical and noncritical defects in terms of the functionality of the chip; and simultaneously updating or adding to the reference data set.

Abstract: The invention concerns a light source having an apparatus for measuring the brightness of the illumination system of an optical viewing device, for example a microscope, in which at least one light sensor (3a) for measuring the intensity of the lamp (1) is arranged, for example, next to the optical waveguide (2). That measurement can be passed on to the user (9), either acoustically or visually, via an electronic unit (4) which compares the measurement to a definable threshold value.

Abstract: Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents.

Abstract: The present invention provides techniques, including a method and system, for inspecting for defects in a circuit pattern on a semi-conductor material. One specific embodiment provides a trial inspection threshold setup method, where the initial threshold is modified after a defect analysis of trial inspection stored data. The modified threshold is then used as the threshold in actual inspection.

Abstract: A component transfer apparatus is provided. The component transfer apparatus comprises a pick and place machine having a component feed source and a movable pick head having access to the component feed source. A component alignment detector is directed toward the component feed source and a controller is coupled to the component alignment detector. The controller contains instructions which, when executed by the controller, cause the controller to compare the detected component alignment with a known component alignment.

Abstract: A method of identifying non-conforming groups of items within a package, the package containing a plurality of groups of items, comprises obtaining a reference signal corresponding to a package containing conforming groups of items, obtaining a signal corresponding to each of the plurality of groups of items in the package, comparing the signal corresponding to each of the plurality of groups of items with the reference signal, determining whether any of the plurality of groups of items is nonconforming, and segregating the package based on whether the package contains a nonconforming group of items.

Abstract: A method of inspecting for defects in the shape of an object, using an inspected image obtained from an object to be inspected, comprising the steps of: setting a reference image of a reference model for determining the defect in shape of the object to be inspected; obtaining the imaged image from the object to be inspected; comparing the corresponding whole or local area of the reference image with the inspected image in terms of brightness; and determining as to whether or not the object is defective in shape. According to the present invention, the shape defect inspection does not rely upon the skilled person's experience, can reduce time required for inspection, and can be made for the whole area of the inspection area.

Abstract: An optical inspection system (10) for comparing surface structures of test and reference objects comprises a laser (12), a photorefractive crystal (24) and a detector (30). A refractive index grating corresponding to a diffraction pattern of a surface structure of the reference object is present within the photorefractive crystal (24) and acts as a spatial filter for light diffracted by surface structures of the test objects. If a surface structure of a test object matches that of the reference object, little or no light reaches the detector (30). If the surface structure of a text object differs from that of the reference object, light of greater power reaches the detector (30). The system (10) provides a simple pass/fail comparison test and light incident on the detector (30) requires no interpretation or other processing. The system (10) may be adapted to allow simple imaging of an edge of an object.

Abstract: A wavelength detector includes a beam splitter block that taps off two spatially separated beams and a linear filter in an optical path of one of the two beams. The linear filter may be provided on the beam splitter block. The linear filter may be a notch anti-reflective filter in the optical path of the application beam. One or both of the beams may be focused on to their respective detectors.

Abstract: A system for optical detection of kinetic samples. The system includes a dual set of detectors linked to a single processor. The time of signal integration is different for each detector, allowing one detector to have a higher sensitivity by integrating over a longer time period while the second detector using shorter integration periods is able to measure kinetic events.

Abstract: In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.

Abstract: A method is disclosed for evaluating isolated and aperiodic structure on a semiconductor sample. A probe beam from a coherent laser source is focused onto the structure in a manner to create a spread of angles incidence. The reflected light is monitored with an array detector. The intensity or polarization state of the reflected beam as a function of radial position within the beam is measured. Each measurement includes both specularly reflected light as well as light that has been scattered from the aperiodic structure into that detection position. The resulting output is evaluated using an aperiodic analysis to determine the geometry of the structure.

Abstract: A pattern test device has a reference data generator for generating reference pattern data and setting a first sub-area or a second sub-area in a mask area depending on the accuracy for the pattern test. A threshold selecting section selects first or second threshold depending on the test location residing in the first sub-area or second sub-area, whereby the judgement section judges presence or absence of a defect in the mask area while using the first or second threshold to compare therewith difference data between the test pattern data and the reference pattern data.

Abstract: An automated game ball inspection apparatus and system for determining quality of surface treatments applied to the surface of game balls. The inspection system includes an imaging system including a detector for creating and providing an image signal of the ball being inspected to an analyzer. The inspection system also includes an environmental modification device to account for contours on the spherical surface of the ball such that the imaging system can create and analyze still images of the ball. A sorter or reject device, may be provided to act upon the ball based on an output signal from the analyzer.

Abstract: A dimension measuring method of measuring a dimension of a pattern on a photomask. This method comprises acquiring, using an optical microscope, an image containing the pattern on the photomask, acquiring a simulated image from photomask design data corresponding to the acquired image, and comparing the image with the simulated image based on a determination condition. If the comparison result does not satisfy the determination condition, the operation of acquiring the simulated image and comparing the image acquired by the optical microscope with the simulated image is repeated after a pattern dimension included in the photomask design data is changed, until the comparison result satisfies the determination condition.

Abstract: A defect detection system to check any defect in the pattern to be checked by comparing a pattern to be checked with a reference pattern includes an edge detection means for detecting a pattern edge of the pattern to be checked by scanning a substrate by laser beams and detecting reflected light thereof. After the relative position between the substrate and the imaging means is adjusted so that the pattern edge of the pattern to be checked is substantially aligned with one side of CCD pixels, an image of the pattern to be checked is picked up. Therefore, the defect detection system corrects misalignment less than one pixel between a pattern to be checked and a reference pattern to prevent occurrence of a false defect.

Abstract: An automated game ball inspection apparatus and system for determining quality of surface treatments applied to the surface of game balls. The inspection system includes an imaging system including a detector for creating and providing an image signal of the ball being inspected to an analyzer. The inspection system also includes an environmental modification device to account for contours on the spherical surface of the ball such that the imaging system can create and analyze still images of the ball. A sorter or reject device, may be provided to act upon the ball based on an output signal from the analyzer.

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.

Abstract: An automated game ball inspection apparatus and system for determining quality of surface treatments applied to the surface of game balls. The inspection system includes an imaging system including a detector for creating and providing an image signal of the ball being inspected to an analyzer. The inspection system also includes an environmental modification device to account for contours on the spherical surface of the ball such that the imaging system can create and analyze still images of the ball. A sorter or reject device, may be provided to act upon the ball based on an output signal from the analyzer.

Abstract: A test structure includes a plurality of lines and a plurality of contact openings defined in the lines. A method for determining contact opening dimensions includes providing a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines; illuminating at least a portion of the contact openings with a light source; measuring light reflected from the illuminated portion of the contact openings to generate a reflection profile; and determining a dimension of the contact openings based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in the lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the contact openings. The detector is adapted to measure light reflected from the illuminated portion of the contact openings to generate a reflection profile.

Abstract: Method and apparatus for automatically optically inspecting electrical circuits by matching portions of an electrical circuit being inspected to corresponding portions in a reference, wherein an adaptive spatial tolerance representing a permissible deviation in the location of corresponding portions is applied to a portion. The spatial tolerances for each portion is in part a function of a characteristic of the portion, for example one or more of: the proximity of the portion to other portions of predetermined type, a spatial location of the portion in an electrical circuit, a material from which the portion is formed, the color of the portion and the intensity of light reflected by the portion. Non-defective matching portions an electrical circuit being inspected and in a reference must be separated by a distance which is less than the adaptive spatial tolerance.

Abstract: An image lens distortion correcting method having step (A) for printing an arbitrary image I1 in a computer; step (B) for photographing the printed image I1 with a camera having a lens distortion and obtaining a photographed image I2 in the computer; step (C) for obtaining a parameter &thgr; such that the image I1 is artificially distorted with the parameter &thgr; and an obtained distorted image I1ud equals with the photographed image 2; and step (D) for using the obtained parameter &thgr; to correct the image photographed by the camera. Thereby, (1) no correspondence point needs to be given, (2) no special tool or object is used, and (3) all points on the image are used, so that an internal parameter can automatically be obtained with high precision, and image lens distortion can be corrected with high precision.

Abstract: In a machine-vision system for inspecting a part or either object, the invention provides a method and apparatus providing illumination with high-speed changing and/or automatic adjustment of not only the illumination's angle, but also the dispersion, intensity, and/or color. Optionally, a light source emits polarized light, a machine-vision imager obtains an image, and a processor receives the image and generates a quality parameter based on the image. One or more of the various means described selectively direct the light in a predetermined pattern based on its polarization and based on the quality parameter of the image. A machine-vision method includes setting one or more illumination parameters, illuminating the object based on the one or more illumination parameters, obtaining an image of the illuminated object, generating a quality parameter based on an image quality of a predetermined region of interest in the image, and iterating using a different illumination parameter.

Abstract: A surface inspection method of the invention includes scanning an inspection surface taking surface measurements. Determinations of various noise levels in the surface are made based on variations in the surface measurements. A dynamic threshold is then determined. The dynamic threshold adapts to the noise levels in the inspection surface to provide a varying threshold that can provide areas of high and low defect sensitivity on the same inspection surface. Defects are then identified by comparing surface measurements with the dynamic threshold. Additionally, the invention includes a surface inspection method that uses signal-to-noise ratios to identify defects. Such a method scans an inspection surface to obtain surface measurements. Noise levels associated with the inspection surface are then determined. Signal-to-noise ratios are determined for the surface measurements. The signal-to-noise ratios are compared with a signal-to-noise ratio threshold value.

Abstract: An automated banking machine is able to receive currency bills therein during a deposit transaction. A sensing assembly can sense radiation that is at least one of reflected from and transmitted through, a received bill. At least one computer is associated with the sensing assembly. The condition of a received bill can be determined as geniune, suspect, or counterfeit. A each respective suspect and counterfeit bill can be correlated to a respective bill depositor. The correlating data can include depositor image data and bill image data. The machine is further able to dispense deposited bills.

Abstract: A soldering inspection apparatus is configured to allow focus areas of vertical and lateral images to coincide with each other. The apparatus includes an illumination module provided with a plurality of light emitting devices and provided at a top thereof with an opening through which light reflected by the subject passes. The apparatus also includes a first photographing unit to photograph a vertical image of the subject through the opening, a plurality of second photographing units to photograph lateral images of the subject through the opening, and a light path unit disposed between the illumination module and the first and second photographing units, and designed to control a progressing path of the light passed through the opening.

Abstract: In a method for inspecting positions and types of defects on wafers with circuit patterns in a semiconductor manufacturing process, inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, electrification of the circuit pattern is prevented, and the area to be exposed to an electron beam is controlled evenly and at a desired voltage. During inspection of the positions and types of defects on a wafer using a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts in the defects of a captured image.

Abstract: An inspection device inspecting for a defect based on an image of wafer surface includes an imaging device obtaining an image data of a wafer subjected to inspection, a storage circuit storing an image data of a wafer for comparison reference, an image comparison unit comparing the image data of the wafer subjected to inspection and the image data of the wafer for comparison reference using a pre-set inspection condition, an acquiring circuit acquiring the WIP data of the wafer subjected to inspection, and a WIP data operating unit setting the inspection condition based on the obtained WIP data.

Abstract: A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution.

Abstract: A system for measuring the spatial dimensions of a three-dimensional object employs a lens and at least two detectors. The combination of which defines two or more object planes. The combination of the lens and the detectors define an optical axis that is normal to the object planes and passes through a focal point of the lens. At least a first and a second photodetector are optically aligned with the object through the lens. The first and second photodetectors or array of detectors are further parallel with the surface but have differing elevations relative to that surface. In addition, the first and second photodetectors are capable of motion relative to said object. Electrical output from the first and from the second photodetectors is provided to a processor that determines a distance of the object from the lens and thereby a height of the object. This system is particularly suited for measuring the spatial dimensions of solder balls mounted to a surface of a ball grid array (BGA) electronic package.

Abstract: A system comprising a plurality of comparison samples configured to substantially simulate the appearance of a keratinous element. Each comparison sample may be configured to substantially simulate both a color and an appearance characteristic other than color of the keratinous element.

Abstract: A method and apparatus for detection of a particular material, such as photoresist material, on a sample surface. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light detector. The light intensity is converted to a numerical value and transmitted electronically to a logic circuit which determines the proper disposition of the sample. The logic circuit controls a sample-handling robotic device which sequentially transfers samples to and from a stage for testing and subsequent disposition. The method is particularly useful for detecting photo-resist material on the surface of a semiconductor wafer.

Abstract: A method for optical part shape measurement of a bare metal part to determine acceptability of the manufactured part. A variable level light source illuminates the part which is mounted on positioning equipment that allows the part to be moved from one position to another. Localized variations in light level are first determined and are compared with a reflectivity model of the part to determine optimization of the setup. Light level and viewing orientation of the part are adjusted to optimize the quality of test data obtained. Data quality is reviewed to ascertain a confidence factor for each location on the part's surface. Using both the reflectivity model and quality test results, data acquired for specified areas of the part is either accepted or rejected. Light level and part orientation are changed based upon how a reflectivity map of the part changes with each adjustment. New and acceptable data are now acquired for those areas of the part where data was previously discarded.

Abstract: An inspection system and a method for using the inspection system, wherein the inspection system includes a collimated light source defining a source optical path, the collimated light source being operable to cause a collimated light beam to propagate along the source optical path, a sensing device defining a sensor optical path, the sensor optical path being substantially perpendicular to the source optical path, a reflecting device disposed within the source optical path to receive the collimated light beam, the reflecting device causing a reflected collimated light beam to propagate along the sensor optical path to the sensing device and a retention mount, the retention mount being disposed within the sensor optical path such that when a component is retained within the retention mount, the component blocks at least a portion of the reflected collimated light beam.

Abstract: Patterns on the surface of a workpiece are inspected by calculating characteristic quantities of the patterns, classifying detected defects automatically in clusters; calculating an occurrence distribution function for each cluster, and estimating the clusters automatically from the condition of a mass of defects that occurred in a characteristic space, if the defect occurrence distribution is unknown. Some of the defects in each of the clusters are reinspected after the classifying.

Abstract: A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of the test and reference surfaces. The test and reference images are converted into sets of geometric constructs, or “primitives,” that are used to approximate features of the images. Next, the sets of test and reference primitives are compared to determine whether the set of test primitives is different from the set of reference primitives. If such a difference exists, then the difference data is used to generate defect parameters, which are then compared to a knowledge base of defect reference data. Based on this comparison, the ADC system characterizes the defect and estimates a degree of confidence in the characterization.

Abstract: A magnetic head positioning apparatus for adjusting the position of a head member relative to its support member by determining the boundary lines for the edge portion of the head body and the center of the pivot in the support member. Luminance variations near the boundary line between areas different in light reflections are derivated so as to determine the position of the boundary line with a high accuracy at a distance shorter than the unit block pitch of the camera photodetectors used to detect the image of the head body and the support member.

Abstract: The present invention relates to circuit defect detection, classification, and review in the wafer stage of the integrated circuit semiconductor device manufacturing process. The method of processing integrated circuit semiconductor dice on a wafer in a manufacturing process for dice comprises the steps of visually inspecting the dice on the wafer to determine defects thereon, summarizing the number, types, and ranges of sizes of the defects of the dice on the wafer, and determining if the wafer is acceptable to proceed in the manufacturing process.

Abstract: A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile.

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract: A data management system for reviewing at least one layer of at least one semiconductor wafer is connected to a first inspection device and a second inspection device. The system includes a server which is connected to the first and second inspection devices. A review station is connected to the server. In use, the first inspection device scans at least one layer of at least one semiconductor wafer so as to yield a first set of detected defects. In addition, the second inspection device scans at least one layer of at least one semiconductor wafer so as to yield a second set of detected defects. The first and second sets of detected defects are uploaded into a database in the server. The review station is then used to extract a sample of the first and second sets of detected defects from the database using at least one defect sampling condition.

Abstract: The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer comprised of a plurality of grating structures, each of the grating structures being comprised of a plurality of features, each of the grating structures having a different critical dimension, illuminating at least one of the grating structures, measuring light reflected off of at least one of the grating structures to generate an optical characteristic trace for the grating structure, and determining the presence of residual photoresist material between the features of the grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from a library. In some embodiments, the grating structures are arranged in a linear array.

Abstract: A method for characterizing a misprocessed wafer includes providing a wafer having a grating structure; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to generate a reflection profile; and characterizing a misprocessed condition of the wafer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grating structure. The detector is adapted to measure light reflected from the grating structure to generate a reflection profile. The data processing unit is adapted to characterize a misprocessed condition of the wafer based on the reflection profile.

Abstract: A scanning exposure apparatus and method for synchronously moving a mask and a substrate with respect to an exposing radiation flux to project an image of a mask pattern on the mask onto the substrate, includes an alignment sensor detecting the initial rotational angle of the mask relative to the substrate, a mask position detector, a substrate position detector, a calculation unit processing the position signals of the mask and the substrate in accordance with the projection ratio of the projection optical system and the initial rotational angle of the mask relative to the substrate to derive a positional deviation of the mask stage relative to the substrate stage, and a controller controlling the mask stage movement and the substrate stage movement to eliminate the positional deviation.

Abstract: An automated game ball inspection apparatus and system for determining quality of surface treatments applied to the surface of game balls. The inspection system includes an imaging system including a detector for creating and providing an image signal of the ball being inspected to an analyzer. The inspection system also includes an environmental modification device to account for contours on the spherical surface of the ball such that the imaging system can create and analyze still images of the ball. A sorter or reject device, may be provided to act upon the ball based on an output signal from the analyzer.

Abstract: In a substrate inspecting apparatus comprising a projecting section (4) in which light sources (8), (9) and (10) are provided for emitting colored lights of R, G and B in directions having different elevation angles, one or two color components which is/are greater than the mean value of the intensities of color components is/are extracted for an inspecting region including a soldered portion. Inclined surfaces adapted to the light sources (8), (9) and (10) are converted into monochromatic shaded images by the extraction processing. A boundary position between the inclined surfaces adapted to the light sources (8) and (9) are converted into one shaded image having a mixed color of red and green and the boundary position between the inclined surfaces adapted to the light sources (9) and (10) is converted into a different shaded image.

Abstract: A semiconductor wafer examination system can accurately and reliably detects defects of semiconductor wafers. The semiconductor wafer examination system 1 comprises a defect classification device for automatically classifying defects of semiconductor wafers on the basis of defect detection parameters and a knowledge base and a classification support device for supporting the operation of the defect classification device. The defect detection parameters define the permissible deviation of the surface image of a defective semiconductor wafer from that of a normal semiconductor wafer. The knowledge base contains data for the types of defects that can occur in semiconductor wafers and data for showing the characteristics of each type. The classification support device prepares data on isolated defective areas that are used for selecting and/or altering the defect detection parameters and preparing the knowledge base.