Abstract: A method for measuring semiconductor constituent element content utilizes the steps of: obtaining a film thickness of an SiGeC layer formed on a semiconductor substrate by evaluation using spectroscopic ellipsometry; measuring infrared absorption spectrum of the SiGeC layer; and obtaining a C content of the SiGeC layer based on the film thickness and the infrared absorption spectrum of the SiGeC layer. The method: obtaining an apparent Ge content of the SiGeC layer by evaluation using spectroscopic ellipsometry; and obtaining an actual Ge content of the SiGeC layer based on the apparent Ge content and the C content. The constituent element content of the SiGeC layer can be easily and accurately measured according to the above-mentioned method.

Abstract: Receptor molecules are anchored on a solid or fluid flat substrate, these being able to selectively bind other atoms or molecules. The substrate surface is then ellipsometrically measured in that the change of the state of polarization, undergone by the linearly polarized light with the reflection on the substrate, is acquired. Subsequently, the substrate with the receptor molecules anchored thereon, for coupling the atoms or molecules to be determined, are exposed to the latter, after which an ellipsometrical measurement is again effected. The changes in the state of polarization are compared to values evaluated by way of reference samples, after which a qualitative and quantitative determination of the coupled atoms or molecules is effected.