Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

Abstract: An electronic testing apparatus is provided. The electronic testing apparatus includes a testing paper having a first reaction line and a second reaction line; a circuit board, having a light source, a first detector, a second detector equipped thereon, the light source being disposed between the first detector and the second detector; and a light shelter, defining a first chamber, a second chamber, and a third chamber, in which there is a first slit configured between the first chamber and the second chamber, and a second slit configured between the second chamber and the third chamber. The first chamber, the second chamber, and the third chamber respectively shelter the first detector, the light source, and the second detector. The first detector detects a reflected light of the light projected to the first window through the first slit by the light source, and the second detector detects a reflected light of the light projected to the second window through the second slit by the light source.

Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

Abstract: A method and device for determining the temperature of a sample, wherein a probing light beam is directed onto the sample whereby at least two partial beams of the probing light pass through paths of different lengths inside the sample by backscattering or reflecting the beams from at least two different depths in the sample, returning the partial beams to an analysis unit, and producing an interference pattern in the analysis unit by means of an interferometric device which uses one light beam as a reference for evaluating the interference pattern in an evaluating unit, wherein the signal intensity of the partial beam is determined counter to the optical path and the temperature displacement and temperature of the sample are determined by the temperature adjustment of the signal intensity.

Abstract: The present invention provides a reflector having a light-diffusing property which suppresses inter-object reflection over a wide angle, and giving particularly high reflectance in an intended range of viewing angle; and to provide a reflection type liquid crystal display device using the same. The reflector includes a plurality of light-reflective concave portions. Each of the concave portions is formed so that an inclination angle (an angle between a plane tangential to a point on a concave surface and the surface of the base material) is maximum on a side portion of the curved surface, and so that the direction of the side portion having the maximum inclination angle is on a far side from a view point of an observer.