Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: A spintronic device includes a first ferromagnetic layer. The first ferromagnetic layer includes a first direction of magnetic polarization. Furthermore, the spintronic device includes a second ferromagnetic layer. The second ferromagnetic layer includes a second direction of magnetic polarization opposite to the first direction. Furthermore, the spintronic device includes a long spin lifetime layer. Furthermore, the spintronic device includes a first tunnel barrier layer disposed between the first ferromagnetic layer and the long spin lifetime layer. Furthermore, the spintronic device includes a second tunnel barrier layer disposed between the second ferromagnetic layer and the long spin lifetime layer.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: In one general approach, an apparatus includes a sensor having an active tunnel magnetoresistive region, magnetic shields flanking the active tunnel magnetoresistive region, and gaps between the active tunnel magnetoresistive region and the magnetic shields. The active tunnel magnetoresistive region includes a free layer, a tunnel barrier layer and a reference layer. At least one of the gaps includes a seed layer of a chromium alloy and an electrically conductive layer having a refractory material formed on the seed layer. The seed layer in this configuration is more resistant to corrosion than elemental chromium when used in a magnetic recording head and/or in a structure exposed to even trace amounts of fluorine.

Abstract: A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.

Abstract: A slider is provided with a conformal coating (e.g., an oxide) on the air-bearing surface (ABS) to provide a consistent surface energy to the ABS. The conformal coating may be formed by an atomic layer deposition (ALD) process. A consistent surface energy inhibits accumulation of contaminants on the slider ABS, such as at topographical transition areas.

Abstract: A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.

Abstract: A multi-sensor reader includes first and second read sensors. The first read sensor includes a first sensor stack including a sensing layer having a magnetization that changes according to an external magnetic field, and a first biasing component configured to magnetically bias the sensing layer of the first sensor stack in a first direction. The second read sensor includes a second sensor stack including a sensing layer having a magnetization that changes according to an external magnetic field, and a second biasing component configured to magnetically bias the sensing layer of the second sensor stack in a second direction that is substantially opposite the first direction.

Abstract: Apparatus and method contemplating a magnetoresistive memory apparatus having a read element having a high resistance material selected to optimize read sensitivity and a write element having a material selected for a lower critical current response than the read element critical current response to optimize switching efficiency, wherein the read element resistance is higher than the write element resistance, and a shared storage space for both elements.

Abstract: In one general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistance of the tunnel barrier of each tunneling magnetoresistance sensor is about 25 ohms or less. In another general embodiment, an apparatus includes a magnetic head having at least one tunneling magnetoresistance sensor. The resistivity of the tunnel barrier of each tunneling magnetoresistance sensor is less than a product of a target resistance of the tunnel barrier and an area of the tunnel barrier. The target resistance is about 25 ohms or less.

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first free layer, a second free layer, and a first spacer layer disposed between the first and second free layers. The first spacer layer is non-magnetic. At least one of the first or second free layers include a primary free layer alloy with cobalt, iron, boron, and a free layer additional element. The free layer additional element is present at from about 1 to about 10 atomic percent. The free layer additional element is selected from one or more of molybdenum, aluminum, germanium, tungsten, vanadium, niobium, tantalum, zirconium, manganese, titanium, chromium, silicon, and hafnium.

Abstract: An apparatus according to one embodiment includes a magnetic head having multiple magnetic transducers, the transducers including read sensors. The read sensors are of at least two differing types selected from a group consisting of tunneling magnetoresistance (TMR), giant magnetoresistance (GMR), anisotropic magnetoresistance (AMR), and inductive sensors.

Abstract: A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Abstract: Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.

Abstract: A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: A device with a magnetic sensor includes a substrate with a device layer. A magnetic sensor is formed on the device layer and includes a first permanent magnet. The first permanent magnet has at least one alternating ferromagnetic (FM) layer and antiferromagnetic (AFM) layer, with a barrier layer disposed between the FM layer and the AFM layer. The first permanent magnet is magnetized in a first direction at a temperature higher than a blocking temperature of the AFM layer. A plurality of device pads are coupled to the magnetic sensor. An integrated circuit substrate with a plurality of IC pads, wherein the plurality of device pads are selectively eutectic bonded to the plurality of IC pads at a bonding temperature greater than the blocking temperature of the AFM layer of the first permanent magnet.

Abstract: In one embodiment, an apparatus includes a scissor sensor stack, a soft bias layer positioned behind the scissor sensor stack in an element height direction, the soft bias layer including a soft magnetic material, and a hard bias layer, at least a portion thereof being positioned behind the soft bias layer in the element height direction, the hard bias layer including a hard magnetic material having an initialization magnetization that is perpendicular to a media-facing surface of the apparatus to provide unidirectional anisotropy to the soft bias layer, wherein the scissor sensor stack includes a first free layer, a second free layer positioned above the first free layer, and a barrier layer positioned between the first free layer and the second free layer. Other apparatuses and methods for forming such apparatuses are described in more embodiments.

Abstract: A read head includes a bottom shield configured as a bottom electrical contact. A bottom reader stack is disposed on and electrically coupled to the bottom shield. A middle electrical contact is electrically coupled to a top layer of the bottom reader stack. A top reader stack is disposed on the bottom reader stack. A bottom layer of the top reader stack electrically coupled to the middle electrical contact. A top shield is configured as a top electrical contact. The top shield is disposed on and electrically coupled to the top reader stack.

Abstract: A read sensor that includes an air bearing surface and a synthetic antiferromagnetic (SAF) structure. The read sensor also includes a first free layer (FL) above the SAF structure and a second FL below the SAF structure. The first FL and the second FL have differing widths at the bearing surface. The first FL, the second FL and the SAF structure are configured to provide a reader resolution that corresponds to a difference between a first width of the first FL and a second width of the second FL.

Abstract: A reader includes top and bottom reader stacks disposed between a top and bottom shield. The top and bottom reader stacks are offset relative to each other in a downtrack direction. Top side shields surround the top reader stack in a crosstrack direction, and bottom side shields surround the bottom reader stack in the crosstrack direction. A split middle shield is between the top and bottom reader stacks and the top and bottom side shields. The split middle shield includes top and bottom portions separated by an isolation layer, the top and bottom portions respectively coupled to the top and bottom reader stacks.

Abstract: Apparatus for sensing data from a magnetic recording medium using a multi-sensor reader with different readback sensitivities. In accordance with some embodiments, a data transducing head has first and second read sensors. The first read sensor is optimized for reading data and the second read sensor is optimized to detect thermal asperity (TA) events.

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract: A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.

Abstract: A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head having side by side sensors. The method includes depositing a pinned layer, a barrier layer and a free layer over a shield, and removing portions of the pinned layer, barrier layer and free layer to expose portions of the shield. A bias material is deposited over the exposed shield. An opening is formed in the free layer to expose the barrier layer, and an insulative material is deposited into the opening. The resulting side by side sensors each has its own free layer separated by the insulative nonmagnetic material. The side by side sensors share the pinned layer.

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

Abstract: A read head includes a bottom shield and a bottom isolation layer that electrically isolates the bottom shield. The read head includes left and right reader stacks having respective bottom layers disposed on at least a portion of the bottom isolation layer. The left and right reader stacks are cross-track adjacent to one another. The read head also includes left and right bottom contacts electrically coupled to respective left and right bottom layers. A top shield is configured as a common top contact electrically coupled to respective top layers of the left and right reader stacks.

Abstract: A magnetic head of an embodiment includes a stack, side shields, and a first and a second magnetic shield. The stack includes a pin layer having a fixed magnetization direction, a first free layer having a magnetization direction to change in accordance with an external magnetic field, a second free layer antiferromagnetically exchange-coupled with the first free layer and having a magnetization direction to change in accordance with the field, and an antiferromagnetic layer exchange-coupled with the second free layer. A magnetic field is applied from the side shields to the first and second free layers, and a direction of the magnetic field is substantially parallel to the magnetization direction of one of the first and second free layers and substantially antiparallel to the magnetization direction of the other, and a magnetic volume of the one is larger than a magnetic volume of the other.

Abstract: A magnetoresistive element includes a first ferromagnetic layer formed on a base substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer. The second ferromagnetic layer includes at least one of H, F, Cl, Br, I, C, O, and N, and a concentration of molecules of the at least one of H, F, Cl, Br, I, C, O, and N included in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than in an upper surface and a lower surface thereof.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head having one or more sensors disposed over one or more sensors. The method includes forming one or more first sensors on a shield, forming a spacer layer over the one or more first sensors and forming one or more second sensors over the spacer layer. A single photolithography process is performed on a resist that is disposed over a portion of the one or more second sensors, the spacer layer and the one or more first sensors, and portions of the one or more second sensors, the spacer layer and the one or more first sensors not covered by the resist are removed by multiple removal processes. The stripe heights of the free layers and the pinned layers of the one or more first sensors and the one or more second sensors are defined as a result of the multiple removal processes.

Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The read sensor has a free layer including a plurality of ferromagnetic layers interleaved with and sandwiching at least one additional layer. Each of the ferromagnetic layers includes at least one of Fe, Co and B and has a first corrosion resistance. The additional layer(s) have a second corrosion resistance greater than the first corrosion resistance.

Abstract: In one embodiment, a magnetic head includes a lower shield layer positioned at a media-facing surface of the magnetic head, at least two magnetoresistive (MR) elements positioned above the lower shield layer, each MR element extending in an element height direction away from the media-facing surface of the magnetic head, back wiring layers positioned above at least one lower layer of each of the MR elements at a position away from the media-facing surface of the magnetic head in the element height direction, wherein the back wiring layers are configured to electrically communicate with the MR elements and configured to separately extract signals from each MR element during a read operation, and an upper shield layer positioned above the MR elements that is configured to electrically communicate with the MR elements.

Abstract: Apparatus for two dimensional reading. In accordance with some embodiments, a magnetic read element has a bias magnet disposed between a plurality of read sensors. The bias magnet may be configured to concurrently bias each read sensor to a predetermined magnetization.

Abstract: A thin film magnetic head including a magnetoresistive element (MR) having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element, a pair of magnetic domain controlling layers are formed by stacking a buffer layer, a magnetic bias layer and a first cap layer in this order on both sides, in a track-width direction, of the MR element via an insulating layer, respectively. Then, a second cap layer is formed to cover the upper surface of the MR element and connect the pair of cap-layers. Then, a gap adjustment layer and a top shielding layer are formed to cover the pair of first cap layers and the second cap layer, completing a read head section.

Abstract: A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.

Abstract: An ultrahigh differential current perpendicular to the plane dual spin valve read head with high pinning stability. The high pinning stability may be achieved using the same anti-ferromagnetic materials for two spin valves by introducing a double synthetic anti-ferromagnetic structure in one of the two spin valves.

Abstract: According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tp2>tp1 is satisfied when a thickness of the first pinning layer is tp1, and a thickness of the second pinning layer is tp2. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements.

Abstract: A magnetic recording read head is provided capable of achieving high reproduction output, resolution, and SNR, even at a high linear density. There is also provided a magnetic recording and reproducing device capable of achieving sufficient error bit rate. The magnetic recording read head includes a differential read head and a write head. The differential read head has a multilayer structure formed by laminating a first magnetoresistive sensor having a first free layer, a differential gap layer, and a second magnetoresistive sensor having a second free layer. Outside the multilayer structure, a pair of electrodes and a pair of magnetic shields are provided respectively. A ratio (Gl/bl) of an inside distance (Gl) between the first and second free layers to a bit length (bl) is set to 0.6 or more and 1.6 or less.

Abstract: A magneto-resistive (MR) device for reading at least one of a legacy data and a present data magnetically recorded on at least one legacy track and a least one present track, respectively, is provided. The device comprises first and second MR elements, and first, second, and third permanent magnets. The first MR read element is positioned between the first and the second permanent magnets to stabilize the first MR read element while reading the legacy data from the media. The second MR element is positioned adjacent to the second permanent magnet and configured to read the present data from the media. The third permanent magnet is positioned adjacent to the second MR element and opposite to the second permanent magnet. The second and the third permanent magnets cooperate with each other to stabilize the second MR read element while reading the present data from the media.

Abstract: A magnetic tunnel junction transistor (MTJT) device includes a source-drain region comprising a source electrode and a drain electrode, a double MTJ element formed between the source electrode and the drain electrode and comprising a free magnetic layer at a center region thereof, and a gate region adjacent to the source-drain region and comprising an insulating barrier layer formed on an upper layer of the double MTJ element and a gate electrode formed on the insulating barrier layer. The MTJT device switches a magnetization orientation of the free magnetic layer by application of a gate voltage to the gate electrode, thereby changing a resistance of the source-drain region.

Abstract: A magnetoresistive (MR) sensor or read head for a magnetic recording disk drive has multiple independent current-perpendicular-to-the-plane (CPP) MR sensing elements. The sensing elements are spaced-apart in the cross-track direction and separated by an insulating separation region so as to be capable of reading data from multiple data tracks on the disk. The sensing elements have independent CPP sense currents, each of which is directed to independent data detection electronics, respectively. Each sensing element comprises a stack of layers formed on a common electrically conducting base layer, which may be a bottom magnetic shield layer formed of electrically conducting magnetically permeable material. Each sensing element has a top electrical lead layer. A top magnetic shield layer is located above the sensing elements in contact with the top lead layers.

Abstract: A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration.

Abstract: A computer case includes a housing, a fixing bracket and an adapter module. The fixing bracket is fixed in the housing. The adapter module is detachably fixed in the fixing bracket. The adapter module includes a shell and a rear plate fixed to an end of the shell. The shell defines a receiving portion to receive a slim drive. The rear plate includes a first jack received in a port of the slim disc drive.

Abstract: Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

Abstract: A thin-film magnetic head has a magnetoresistive effect read head element. The magnetoresistive effect read head element includes a lower shield layer, an upper shield layer, and a magnetoresistive effect layer formed between the lower shield layer and the upper shield layer. The magnetoresistive effect read head element also includes a lower antiferromagnetic layer. The lower antiferromagnetic layer is contacted with the lower shield layer only at an edge area of the lower shield layer.

Abstract: A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

Abstract: An opening (3) is formed on a surface of a metal film (2), a plurality of axes (4, 5, 6, 7) cross each other substantially perpendicularly at the opening (3), a plurality of periodic grooves (8, 9, 10, 11) are provided for respective axes (4, 5, 6, 7), and each of the periodic grooves (8, 9, 10, 11) includes a plurality of grooves (8-n, 9-n, 10-n, and 11-n) substantially perpendicular to the axis for which each periodic groove is provided, and the periodic grooves (8, 9, 10, 11) is positioned point-symmetrically with respect to the opening (3).