Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a coil. The coil includes first and second tier parts opposed to each other in a first axis direction, with the magnetoresistive effect element interposed therebetween. The coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect element in a second axis direction. The first tier part includes first conductors extending in a third axis direction, arranged in the second axis direction and coupled in parallel to each other. The second tier part includes a second conductor or second conductors extending in the third axis direction, the second conductors being arranged in the second axis direction and coupled in parallel to each other. The first conductors each have a width smaller than a width of the second conductor or each of the second conductors.

Abstract: A magnetic sensor device includes a magnetic sensor, and a soft magnetic structure disposed near the magnetic sensor. The magnetic sensor and the soft magnetic structure are configured so that when an external magnetic field including a detection-target magnetic field is applied to the magnetic sensor, the external magnetic field is also applied to the soft magnetic structure, and when the soft magnetic structure has a magnetization, a magnetic field based on the magnetization of the soft magnetic structure is applied to the magnetic sensor. The soft magnetic structure has a stripe domain structure.

Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient ? that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% ? R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.

Abstract: A sensor module includes a magnetic field sensor that includes a sensor main body including a magnetic field sensing element and a plurality of lead wires led out from the sensor main body, a container case including a container part that includes the sensor main body, and a molded body that includes a mold resin molded so as to include at least a part of the container case without contacting with the sensor main body.

Abstract: An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Abstract: In one embodiment, a magnetic head includes a first shield; a spin torque oscillator (STO) sensor positioned above the first shield, the STO sensor comprising a reference layer and a free layer positioned above the reference layer; and at least one shield positioned in a plane that is parallel with a media-facing surface of the STO sensor, the plane also intersecting the STO sensor, wherein one or more of the at least one shield comprises a highly magnetically permeable material that is exchange decoupled and electrically decoupled from the STO sensor. Other magnetic heads, systems, and methods for producing the magnetic heads are described according to more embodiments.

Abstract: An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Abstract: The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.

Abstract: Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.

Abstract: A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly.

Abstract: A method of making a magnetic head according to one embodiment comprises forming a shield layer having first and second recesses in first and second end regions which surround a central region; depositing first and second lead layers in the first and the second recesses; and forming a read sensor in the central region such that a first edge of the read sensor is positioned above an edge of the first lead layer and a second edge of the read sensor is positioned above an edge of the second lead layer.

Abstract: A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge includes defining a shunt having first and second leads electrically connected in parallel with the component and separated by a gap. A portion of a shield layer is deposited to form the shunt between the first and second leads to span the gap therebetween and form a shunted assembly. The shunted assembly and component are lapped to form the ABS at the location of the component, a sacrificial carbon overcoat is deposited on the ABS, and additional processing is performed on the shunted assembly. A portion of the shunted assembly, the shunt, and portions of the sacrificial carbon overcoat are then removed to form an electrical open for an unshunted assembly having ABS features comprising an air bearing cavity/deep gap at a former location of the shunted assembly.

Abstract: The magnetoresistance effect film is capable of performing enough function without employing an antiferromagnetic layer. The film comprises: a seed layer; a first pinned magnetic layer formed on the seed layer; an antiferromagnetically coupling layer formed on the first pinned magnetic layer; a second pinned magnetic layer formed on the antiferromagnetically coupling layer; a nonmagnetic layer formed on the second pinned magnetic layer; a free magnetic layer formed on the nonmagnetic layer; and a protection layer formed on the free magnetic layer. The seed layer fixes magnetizing directions of the first and the second pinned magnetic layer. The seed layer is made of a material which does not exchange-couple with the first pinned magnetic layer.

Abstract: A magnetoresistive read head having a corrugated magnetoresistive layer wherein the corrugated section does not encroach on magnetic elements on either end of the magnetoresistive layer. The corrugations in the magnetoresistive layer stabilize the magnetization in the center region of the read head, while the magnetic elements stabilize the magnetization at the ends. By separating the two stabilization methods, unfavorable interactions between them is reduced.

Abstract: A magneto-resistive element includes a vertical current type magneto-resistive element; a first conductor for causing a current to flow into the vertical current type magneto-resistive element; and a second conductor for causing the current to flow out of the vertical current type magneto-resistive element. The first conductor generates a first magnetic field based on the current. The second conductor generates a second magnetic field based on the current. The first conductor and the second conductor are located so that the first magnetic field and the second magnetic field act as a bias magnetic field applied on the vertical current type magneto-resistive element.

Abstract: A magnetoresistive effect element 5 is physically configured such that the element width is at least three times as large as the element height. A plurality of domain control layers 11 to 13 are located between the magnetoresistive effect element 5 and a plurality of detecting electrodes 8 to 10 in a state that the domain control layers 11 to 13 are closely formed on the magnetoresistive effect element 5. Each of the domain control layers 11 to 13 applies a unidirectional magnetic field to a region of the magnetoresistive effect element 5 vertically disposed in a guard band of the magnetic recording medium 4, the guard band having no information recorded therein. The unidirectional magnetic field is directed in an orientation of an initial magnetization in a single magnetoresistive effect element, the orientation of which depends on a direction of on an easy axis of the magnetoresistive effect element 5.