Abstract: A magnetic sensor has a magnetoresistive strip including a plurality of magnetoresistive elements arranged in the y-direction through a plurality of hard magnetic members and ferromagnetic films arranged in the x-direction through a magnetic gap. The magnetoresistive strip is disposed around a magnetic gap. One end of the magnetoresistive strip in the y-direction is connected to a terminal electrode not through another magnetoresistive element applied with another magnetic field to be detected, and the other end thereof in the y-direction is connected to a terminal electrode not through another magnetoresistive element applied with the magnetic field to be detected. The magnetoresistive strip S thus has a linear shape not having a folded structure, so that the relation between the direction of a magnetic bias and the direction of flow of current becomes constant over all the sections of the magnetoresistive strip.

Abstract: The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.

Abstract: A method of making a magnetic head according to one embodiment comprises forming a shield layer having first and second recesses in first and second end regions which surround a central region; depositing first and second lead layers in the first and the second recesses; and forming a read sensor in the central region such that a first edge of the read sensor is positioned above an edge of the first lead layer and a second edge of the read sensor is positioned above an edge of the second lead layer.

Abstract: A magnetoresistive sensor having a novel seed layer that allows a bias layer formed there over to have exceptional hard magnetic properties when deposited over a crystalline structure such as an AFM layer in a partial mill sensor design. The seed layer structure includes alternating layers of Ru and Si and a layer of CrMo formed thereover. The seed layer interrupts the epitaxial growth of an underlying crystalline structure, allowing a hard magnetic material formed over the seed layer to have a desired grain structure that is different from that of the underlying crystalline layer. The seed layer is also resistant to corrosion, providing improved sense current conduction to the sensor.

Abstract: A magnetic sensor includes a sensor stack having a sensing layer. A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer. A second biasing structure having a second magnetization vector is positioned within the sensor stack relative to the sensing layer to counter the biasing field at a center of the sensing layer.

Abstract: A high frequency, low loss, power, laminated magnetic material includes alternating magnetic plates of low hysteresis loss material and electrically insulating films. The multi-layer structure allows for independently and simultaneously controlling and reducing hysteresis loss and eddy current loss, and maintaining a high resistivity, while operating at high frequencies and at high flux density levels, resulting in extremely low net loss density for the composite material. Methods of making this material include co-firing of the magnetic plates and thin insulating films, making the magnetic plates (of low hysteresis material, such as a ferrite) and insulating films separately, and using heat and/or pressure and/or adhesive or making a stack of magnetic plates with spacers in between them and dipping in a molten or liquid insulating material.

Abstract: A thin-film magnetic head in which has a spin-valve element and a pair of electrode layers that are electrically connected to both ends of the element in the direction of width. A tantalum film is laminated as a protective layer on the uppermost part of the abovementioned element. A pair of electrode layers are caused to overlap on both end portions of the element. The tantalum oxide present in the areas on which the electrode layers overlap is removed prior to the formation of the electrode layers so that the electrical resistance between the electrode layers and the element is reduced.

Abstract: A shielded magnetoresistance (MR) effect sensor includes the following layers that are laminated in sequence: a lower shielding layer, a lower gap layer, a MR effect device, a vertical bias layer that directly contacts side surfaces of the MR effect device, and a lower electrode layer that also directly contacts the side surfaces of the MR effect device. An upper gap layer is laminated on the lower electrode layer and on a top surface of the MR effect device and an upper shielding layer is laminated on the upper gap layer. Alternatively, the vertical bias layer directly contacts the top and side surfaces of the MR effect device and the lower electrode is laminated on the vertical bias layer.