Abstract: A method for assembling a force sensitive capacitor is provided. The method comprises: assembling an insulating member to a rear end of a rear-end moving part; inserting a front-end moving part and the rear-end moving part into a case from a front end and a rear end of the case, respectively, and assembling connecting portions of the front-end moving part and the rear-end moving part; assembling a compressible conductor to a front end of a conductor base; and inserting the conductor base into the case from the rear end of the case and assembling the conductor base to the case.

Abstract: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (?r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types.

Abstract: A capacitor is provided having a tough surface portion which prevents cracking that tends to occur when the capacitor is built-in or surface-mounted on a wiring board. A ceramic sintered body of the capacitor includes a capacitor forming layer portion, a cover layer portion and an interlayer portion. The capacitor forming layer portion has a laminated structure wherein ceramic dielectric layers and inner electrodes connected to a peripheral portion of capacitor via conductors, are alternately laminated. The cover layer portion is exposed at a surface portion of the ceramic body and has a laminated structure wherein ceramic dielectric layers and dummy electrodes not connected to the capacitor via conductors, are alternately laminated.

Abstract: A variable capacitance element includes a movable element provided above a substrate using supporting portions and support beams so as to be displaced from the substrate. An insulating film and a movable electrode are provided on a conductor facing surface of the movable element. A driving electrode is arranged to displace the movable element, between a signal cutoff position and a signal passage position, whereby a high frequency signal transmitted through a transmission line is cut off or allowed to pass. The insulating film uses compressive stress to warp the movable element and the movable electrode in a direction of warping in a convex form toward the transmission line, and maintains this warping direction.

Abstract: A high power slide tuning capacitor (200) integrated into a circuit board adapted to function at RF and microwave frequencies. The capacitor (200) is comprised of a dielectric substrate (26) with a cavity (28) cut into a side of the substrate (26); a ground plane (24) mounted on a bottom surface of the dielectric substrate (26); a microstrip patch (22) mounted on a top surface of the dielectric substrate (26) and positioned above the cavity (28); and a movable dielectric stub (30) which engages the cavity (28) such that a variable length of the stub (30) is positioned beneath the microstrip patch (22). The microstrip patch (22) can be coupled to a desired circuit trace (20), effectively forming a shunt capacitor to ground.

Abstract: A high-Q micromechanical device such as a capacitor and method of tuning same by electrostatically moving the capacitor's dielectric are provided. The high-Q, tunable, micromechanical capacitor is realized using an IC-compatible, electroplated-metal, surface-micromachining technology and demonstrates quality (Q−) factors in excess of 290—the highest reported to date for on-chip tunable capacitors at frequencies near 1 GHz. When combined with on-chip (or off-chip) high-Q inductors, these tunable capacitors are expected to be useful for not only low-phase noise integrated VCO applications, but also for tunable, low-loss, RF filters and tunable matching networks, both key functions capable of enhancing the multi-band programmability of wireless communication handsets.

Abstract: A voltage tunable dielectric varactor includes a substrate having a first dielectric constant and having generally a planar surface, first and second electrodes positioned on the generally planar surface of the substrate, the first and second electrodes being separated to form a first gap therebetween; a tunable dielectric layer positioned on the first and second electrodes and in the first gap, the tunable dielectric layer having a second dielectric constant greater than the first dielectric constant; and third and fourth electrodes positioned on a surface of the tunable dielectric layer opposite the first and second electrodes, the third and fourth electrodes being separated to form a second gap therebetween.