Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.

Abstract: Embodiments of a peak power management (PPM) circuit on a memory die are disclosed. The PPM circuit includes a first transistor and a second transistor arranged in parallel, wherein the first and second transistors each has a drain terminal electrically connected to a first power source and a second power source, respectively. The PPM circuit also includes a resistor having a first terminal electrically connected to respective source terminals of the first and second transistors. The PPM circuit further includes a first contact pad on the memory die, electrically connected to a second contact pad on a different memory die through a die-to-die connection. The PPM circuit also includes a third transistor with a drain terminal electrically connected to a second terminal of the resistor, and a source terminal electrically connected to the first contact pad.

Abstract: An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

Abstract: A Universal Serial Bus (USB) device includes a USB Type-C connector having a configuration channel (CC) terminal and an integrated circuit (IC) controller. The IC controller comprises a VCONN pin coupled to the CC terminal of the USB Type-C connector, an output terminal, and an on-chip voltage protection circuit coupled between the VCONN pin and the output terminal. The on-chip voltage protection circuit comprises a switch coupled between the VCONN pin and the output terminal, a pump logic coupled to a gate of the switch, a resistor coupled between the VCONN pin and the gate of the switch, and a diode clamp coupled between the gate of the switch and ground.

Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.

Abstract: A power device which is formed on a semiconductor substrate includes: a lateral insulated gate bipolar transistor (LIGBT), a PN diode and a clamp diode. The PN diode is connected in parallel to the LIGBT. The clamp diode has a clamp forward terminal and a clamp reverse terminal, which are electrically connected to a drain and a gate of the LIGBT, to clamp a gate voltage applied to the gate not to be higher than a predetermined voltage threshold.

Abstract: An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.

Abstract: An electrostatic discharge protection circuit, including a discharge switch, a first transistor, an inverter, and a feedback circuit, is provided. The discharge switch is coupled between a first power rail and a second power rail, and may be turned on or cut off according to a control voltage. The first transistor has a first end coupled to the first power rail. A control end of the first transistor receives the control voltage. The inverter is coupled between a second end of the first transistor and a control end of the discharge switch. The feedback circuit is coupled between an output end and an input end of the inverter and is configured to determine whether to provide a turn-on path between the input end of the inverter and the second power rail according to the control voltage.

Abstract: A display device includes: a display panel including a display area including pixels and a non-display area adjacent to the display area; a first driving integrated circuit including a first ground terminal, where the first driving integrated circuit is electrically connected to the display panel; a first printed circuit board electrically connected to the first driving integrated circuit; a first plate disposed on a bottom surface of the display panel and overlapping with the first driving integrated circuit; and a second plate disposed on the bottom surface of the display panel and spaced apart from the first plate, where the second plate is electrically connected to a system ground.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode and an ESD clamp circuit. The first diode is in a semiconductor wafer, and is coupled to an input output (IO) pad. The second diode is in the semiconductor wafer, and is coupled to the first diode and the TO pad. The ESD clamp circuit is in the semiconductor wafer, and is coupled to the first diode and the second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer. The first signal tap region is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.

Abstract: The present disclosure provides an SST driving circuit, a chip, and a driving output method. The SST driving circuit includes: a signal driver for driving and outputting a signal to be driven, the signal driver including termination resistors; a first electrostatic current discharge module, providing first discharge paths for electrostatic currents generated in the signal driver; a second electrostatic current discharge module, connected in series with the termination resistors, providing second discharge paths for the electrostatic currents; and a power clamp, used for conducting the power clamp circuit, the first discharge paths and the second discharge paths when a power supply voltage of the signal driver exceeds a clamping voltage. The present disclosure provides different discharge paths, which effectively reduces voltage borne by a protected device through a voltage division method, and improves the device's ability to protect against electrostatic discharge.

Abstract: A protective circuit includes a first line, a second line, and a signal line. A first and second diode are connected in series between the first and second lines. A resistor and a capacitor are connected between the first and second lines. A first inverter, a second inverter, a third inverter are connected in series between a node between the resistor and capacitor and a gate of a first transistor. A third diode is connected between the first and second lines. The first transistor is connected between the first and second lines. A second transistor is connected between the first line and a protected circuit. A gate of the second transistor is connected to the output of the first inverter. A third transistor is connected between the second line and the protected circuit. A gate of the third transistor is connected to output of the second inverter.

Abstract: An ESD protection circuit includes a trigger transistor that is responsive to a detection signal indicating an ESD event. The trigger transistor pulls the voltage of a hold node towards a voltage of a power supply rail in response to the detection signal indicating an ESD event. The ESD protection circuit includes a replica trigger transistor whose leakage current controls current provided to the hold node after the detection signal no longer indicates an ESD event to compensate for leakage current through the trigger transistor.

Abstract: According to one embodiment, a semiconductor protection circuit includes a first MOS transistor that has a drain that is connected to an input terminal, a source that is connected to an output terminal, and a gate that is connected to a control terminal, a second MOS transistor that has a drain that is connected to the gate of the first MOS transistor and a source that is connected to the source of the first MOS transistor, a rectifier element that is connected in a forward direction from a gate of the second MOS transistor to the gate of the first MOS transistor, and a low-pass filter that is connected between the gate and the source of the second MOS transistor.

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.

Abstract: Some embodiments include a capacitor having a container-shaped bottom portion. The bottom portion has a first region over a second region. The first region is thinner than the second region. The first region is a leaker region and the second region is a bottom electrode region. The bottom portion has an interior surface that extends along the first and second regions. An insulative material extends into the container shape. The insulative material lines the interior surface of the container shape. A conductive plug extends into the container shape and is adjacent the insulative material. A conductive structure extends across the conductive plug, the insulative material and the first region of the bottom portion. The conductive structure directly contacts the insulative material and the first region of the bottom portion, and is electrically coupled with the conductive plug. Some embodiments include methods of forming assemblies.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a primary ESD protection unit electrically connected to a first node and to a second node and configured to shunt current in response to an ESD pulse received between the first and second nodes and a secondary ESD protection unit electrically connected to the primary ESD protection unit and to the second node and configured to shunt current in response to the ESD pulse to keep an output voltage of the ESD protection device to be within a safe operating voltage range of a device to be protected. Other embodiments are also described.

Abstract: The protection circuit includes a detection circuit and a discharge circuit. The detection circuit is coupled to first and second power bonding pads and detects whether an ESD event or an EOS event occurs at the first power bonding pad. The detection circuit controls a detection voltage on a detection node according to a detection result. The first and second power bonding pads belong to different power domains. The discharge circuit is coupled to the detection node and the first power pad. In response to the ESD event occurring at the first power bonding pad, the discharge circuit provides a discharge path between the first power bonding pad and a ground terminal according to the detection voltage. In response to the EOS event occurring at the first power bonding pad, the detection circuit activates a second discharge path between the first power bonding pad and the ground terminal.

Abstract: A symmetrical layout technique for an electrostatic discharge ESD device and a corresponding power supply network is presented. The ESD device protects an electronic circuit against an overvoltage or overcurrent and contains a first contact area to establish an electrical contact with a first supply rail, a second contact area to establish an electrical contact with a second supply rail, and a third contact area to establish an electrical contact with a third supply rail. The first and third supply rails provide a first supply voltage, and the second supply rail provides a second supply voltage. Within the ESD device, an axis of symmetry passes through the second contact area, and the first contact area and the third contact area are arranged on opposite sides with regard to the axis of symmetry. The symmetrical layout technique allows flipping the orientation of the ESD device with regard to the supply rails.

Abstract: An electrostatic discharge circuit includes six transistors. A power supply voltage node is coupled with a gate and a drain of a first transistor and connected to a source of a second transistor and a drain of a fifth transistor. A source of the first transistor is coupled to a ground voltage node and connected to a gate of a third transistor and a gate of a fourth transistor. A gate of the second transistor is connected to the drain of the first transistor. A source of the third transistor is connected to the drain of the second transistor and a gate of the fifth transistor. A drain of the fourth transistor is connected to a drain of the third transistor. A source of the fourth transistor and a source of the sixth transistor are connected to the ground voltage node.

Abstract: Snapback ESD protection circuits that include an Input/Output pad, a ground source, a first and a second NMOS transistor, and trigger circuit, pad bias circuit, and gate bias circuit. The first transistor drain connects to the pad. The second transistor drain connects to the first transistor source. The second transistor source connects to ground. The trigger circuit connects to the pad and a reference voltage to detect an ESD event at the pad. The pad bias circuit connects to the pad, the trigger circuit, ground, and the reference voltage to manage a voltage level for the reference voltage. The gate bias circuit connects to the reference voltage, a supply voltage, ground, and the gates of the first and second transistor to dynamically control the voltage of each gate of the first and a second NMOS transistor.

Abstract: The present disclosure concerns a switching device comprising a first phosphorus-doped silicon layer on top of and in contact with a second arsenic-doped silicon layer. The present disclosure also concerns a method of making a switching device that includes forming a phosphorus-doped silicon layer in an arsenic-doped silicon layer.

Abstract: An electrostatic discharge (ESD) protection device may be provided, including a substrate having a conductivity region arranged therein, a first terminal region and a second terminal region arranged within the conductivity region, and a field distribution structure. The field distribution structure may include an intermediate region arranged within the conductivity region between the first terminal region and the second terminal region, an isolation element arranged over the intermediate region, and a first conductive plate and a second conductive plate arranged over the isolation element. The first conductive plate may be electrically connected to the first terminal region and the second conductive plate may be electrically connected to the second terminal region.

Abstract: A protection circuit including a detection circuit, a current discharge element, a first transistor, and a second transistor is provided. The detection circuit is coupled between a first pad and a second pad to detect ESD events. In response to an ESD event, the detection circuit sets the detection signal to a predetermined level. The current discharge element is coupled between the first and second pads. In response to the detection signal being at the predetermined level, the current discharge element is turned on so that the ESD current passes through the current discharge element. The first transistor is coupled between a core circuit and the second pad. The second transistor is coupled between the first transistor and the second pad. In response to the detection signal being at the predetermined level, the second transistor is turned on to turn off the first transistor.

Abstract: A flexible electrical system distribution, switching, and protection solution having two or more autonomous electrical switching devices and optionally adding circuit protection and manual switching in one self-contained device. A printed circuit board assembly is configured to operate two or more electrical switch functions to act from a remote signal input or autonomously, independently or simultaneously. The printed circuit board can be assembled into a housing where multiple independent circuits on the printed circuit board assembly can be permanently electrically connected to each other through electrical conductors thus reducing the number of independent circuits within the assembly. The assembly further consists of an electrically isolative housing and terminal studs and retaining nuts capable to receiving electrical cable ring terminals.

Abstract: An electrostatic discharge protection circuit capable of clamping both positive and negative ESD events and passing signals is provided. Generally, the circuit includes a p-channel field-effect transistor (PFET) clamp coupled to a pin to be protected, the PFET clamp including a plurality of PFETs in a DN-well, an n-channel field-effect transistors (NFET) clamp coupled between ground and the pin through the PFET clamp, the NFET clamp including a plurality of NFETs coupled in series, and a bias network for biasing a voltage of the DN well to substantially equal a voltage on the pin when the voltage on the pin is greater than ground potential, and to ground potential when the pin voltage is less than ground potential. The plurality of are PFETs coupled in parallel between the pin and the NFET clamp, each of the PFETs is coupled to the pin though one of a plurality ballast resistors.

Abstract: An electronic circuit includes a switch coupled between an input terminal intended to receive a first voltage and an output terminal coupled to a decoupling capacitor and intended to also be coupled to a load. A comparison stage is configured to compare the first voltage and a second voltage that is present at the output terminal. A first adjustment stage is configured to limit a positive inrush current flowing between the input terminal and the output terminal and a second adjustment stage is configured to limit a negative inrush current flowing between the output terminal and the input terminal. A control circuit is configured to activate either the first adjustment stage or the second adjustment stage as a function of a result of the comparison.

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.

Abstract: A transient voltage suppression device includes at least one diode string, a power clamp device, at least one first bypass diode, and at least two second bypass diodes. The diode string is coupled between a power terminal and a common bus and coupled to an input output (I/O) port. The power clamp device is coupled between the power terminal and the common bus. The first bypass diode is coupled between the common bus and a ground terminal. The second bypass diodes are coupled in series, coupled between the common bus and the ground terminal, and coupled to the first bypass diode in reverse parallel. Alternatively, the first bypass diode and the second bypass diodes are replaced with at least one bi-directional electrostatic discharge (ESD) device.

Abstract: The electronic circuit protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first diode, a second diode, a first resistor, a second resistor and a third resistor, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

Abstract: A system and method for detecting and measuring electrostatic discharge during semiconductor assembly are described. A semiconductor device fabrication process forms a conductor between two metal routes in a series path on a semiconductor die. The series path is between a bump on the die and a substrate tie. The two metal routes have a width greater than a threshold based on a metal width capable of conducting a critical current density caused by an electrostatic discharge event without conductive failure or breakdown. The conductor has a width less than the threshold. When an electrostatic discharge event occurs, if the current exceeds a critical amount of current, the conductor experiences conductive breakdown and current ceases to flow. During later testing, this series path is tested for open connections, which indicate whether the conductor acting as an electrical on-die fuse experienced conductive failure during assembly of a semiconductor chip.

Abstract: In general, according to one embodiment, a protection circuit includes first and second power lines, first and second controllers, a first transistor, and a detector. The first controller includes a first resistor element, a capacitor, first, second, and third inverters. The second controller includes third transistor. One end of the third transistor is coupled to the second power line. The other end of the third transistor is coupled to each of the output end of the first inverter and the input end of the second inverter.

Abstract: Apparatuses for providing pads included in external terminals of a semiconductor device are described. An example apparatus includes a memory cell array, a data queue (DQ) circuit, a data pad and a power pad. The memory cell array may include one or more memory cells. In a write operation, the data pad receives write data and provides the write data to the DQ circuit. The DQ circuit receives the write data and provides the write data to the memory cell array. In a read operation, the DQ circuit receives read data from the memory cell array and provides the read data. The data pad receives the read data from the DQ circuit and provides the read data. The power pad provides a power supply voltage. The data pad and the power pad are disposed across from each other with respect to the DQ circuit.

Abstract: An ESD protection circuit is provided. An embodiment provides an ESD protection circuit of a crystal oscillator for bearing an output swing level in an ESD IO for improving a reference clock isolation by adding a stacked diode to the ESD protection circuit and for improving a protection function by applying a secondary diode structure.

Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.

Abstract: An integrated circuit (IC) includes an input/output (IO) circuit in a first power domain, coupled between a first and second power supply terminal, and an integrity monitor in a second power domain, coupled between a third and fourth power supply terminal. The IO circuit includes an external terminal configured to communicate signals external to the IC, and an internal circuit node configured to provide a tap signal, wherein the internal circuit node is neither the first power supply terminal nor the second power supply terminal. The integrity monitor has a counter configured to provide a count value by counting each time the tap signal reaches a threshold voltage, and is configured to provide an integrity fault indicator based at least in part on the count value, in which the integrity fault indicator indicates whether or not a signal provided or received by the external terminal is trustworthy.

Abstract: A two-terminal electrical protective device operates by harvesting energy from a small but non-zero voltage drop across a closed solid-state switch. From a default, open-circuit state, the device is remotely triggered by an AC signal to enter the desired conductive state. Power scavenged by an energy harvesting circuit while the device is in the conductive state, powers a gate drive circuit to hold the device in the conductive state for as long as current flows. When current stops, the device returns to the default open-circuit state.

Abstract: A voltage clamping circuit for protecting an internal circuitry comprising an input means for receiving Vin; a p-channel clamping transistor (PCT) coupled to input means for clamping Vin to prevent Vin from falling below a p-channel biasing voltage VbiasP; an n-channel clamping transistor (NCT) coupled to input means for clamping Vin to prevent Vin from rising above an n-channel biasing voltage VbiasN; and a plurality of output means for providing a first output voltage from PCT and a second output voltage from NCT; a p-channel bias circuit including a first, a second and a third bias transistor with each transistor possessing a threshold voltage Vth for providing a p-channel bias voltage to turn on PCT; and an n-channel bias circuit including a fourth, a fifth and a sixth bias transistor with each transistor possessing the threshold voltage Vth for providing an n-channel bias voltage to turn on NCT.

Abstract: A power regulator includes an input capacitor connected between a first voltage bus and an intermediate point, an output capacitor connected between a second voltage bus and the intermediate point, a plurality of switches and an inductor connected between the input capacitor and the output capacitor, wherein a source of one switch of the plurality of switches is connected to the intermediate point and a protection device connected between the intermediate point and a third voltage bus.

Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.

Abstract: Examples described herein generally relate to devices that include electrostatic discharge (ESD) protection in a chip stack. In an example, a device includes a chip stack including first and second chips, ground and power supply voltage nodes, and first and second resistor-capacitor (RC) clamps. The second chip is disposed on and attached to the first chip. The ground and power supply voltage nodes are connected between and extend in the first and second chips, and are connected to the ground and power supply voltage exterior connector pads, respectively, of the first chip. The first and second RC clamps are disposed in the first and second chips, respectively. The first and second RC clamps are connected to and between the ground node and the power supply voltage node. An RC-time constant of the second RC clamp is less than an RC-time constant of the first RC clamp.

Abstract: An integrated circuit comprises a power switch comprising a current path and a current sense node; and a temperature sense circuit internally coupled between the current path and the current sense node.

Abstract: Methods and apparatuses for protecting a low voltage (LV) circuit implemented with LV transistors are presented. Protection is provided via a protection circuit operating in a high voltage domain defined by a varying supply voltage and a reference ground. The protection circuit generates high side, VH, and low side, VL, voltages to the LV circuit, while protecting the LV circuits from high voltage and maintaining a minimum difference voltage, VH?VL. The protection circuit generates the difference voltage based on a voltage across a resistor of a resistor ladder that is coupled between the varying supply voltage and the reference ground. The protection circuit includes a clamp circuit that limits the minimum difference voltage for low values of the supply voltage.

Abstract: A BiMOS-type transistor includes a gate region, a channel under the gate region, a first channel contact region and a second channel contact region. The first channel contact region is electrically coupled to the gate region to receive a first potential. The second channel contact region is electrically coupled to receive a second potential.

Abstract: A semiconductor memory device has an output driving circuit. The output driving circuit includes a pull-down driver and a gate control logic. The pull-down driver includes first and second transistors. The first and second transistors are coupled between a pad and a ground node. The gate control logic includes third and fourth transistors. The third and fourth transistors are coupled between a pad and a first supply voltage node. The gate control logic is configured to receive a voltage of the pad and output a feedback voltage. The first transistor is controlled by the feedback voltage. The second and third transistors are controlled by the first supply voltage. The fourth transistor is controlled by the voltage of the pad.

Abstract: High voltage tolerant electrical overstress protection with low leakage current and low capacitance is provided. In one embodiment, a semiconductor die includes a signal pad, an internal circuit electrically connected to the signal pad, a power clamp electrically connected to an isolated node, and one or more isolation blocking voltage devices electrically connected between the signal pad and the isolated node. The one or more isolation blocking voltage devices are operable to isolate the signal pad from a capacitance of the power clamp. In another embodiment, a semiconductor die includes a signal pad, a ground pad, a high voltage/high speed internal circuit electrically connected to the signal pad, and a first thyristor and a second thyristor between the signal pad and the ground pad.

Abstract: A semiconductor system includes a control device, and a semiconductor apparatus coupled with the control device through a first line and a second line. A loading of the second line is greater than a loading of the first line, wherein the semiconductor apparatus includes a first receiving circuit which is electrically coupled with the first line and a second receiving circuit which is electrically coupled with the second line. Further a loading between the first line and the first receiving circuit is greater than a loading between the second line and the second receiving circuit.

Abstract: A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.

Abstract: An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.