Abstract: A read threshold voltage can vary over time due to process variation, data retention issues, and program disturb conditions. A storage system can calibrate the read threshold voltage using data from a decoded codeword read from a wordline in the memory. For example, the storage system can use the data instead of syndrome weight in a bit error rate estimate scan (BES). As another example, the storage system can use the data to generate a bit error rate distribution, which can be used instead of a cell voltage distribution histogram. Using these techniques can help reduce latency and power consumption, increase throughput, and improve quality of service.

Abstract: An integrated circuit comprises a memory device including at least one memory point having a volatile memory cell and a single non-volatile memory cell coupled together to a common node, and a single selection transistor coupled between the common node and a single bit line. A first output of the volatile memory cell is coupled to the common node, and a second output of the volatile memory cell, complementary to the first output, is not connected to any node outside the volatile memory cell.

Abstract: A memory controller, for controlling a memory device including a plurality of memory blocks, includes a garbage collection controller configured to determine candidate blocks in which valid data is equal to or less than a predetermined ratio among the plurality of memory blocks, and configured to determine at least two or more memory blocks as victim blocks among the candidate blocks based on information on blocks that may be simultaneously erased among the plurality of memory blocks. The memory controller also includes an operation controller configured to control the memory device to copy valid data stored in the victim blocks to a different memory block.

Abstract: A system includes a memory component to, upon completion of second pass programming in response to a multi-pass programming command, write flag bits within a group of memory cells programmed by the multi-pass programming command A processing device, operatively coupled to the memory component, is to perform multi-pass programming of the group of memory cells in association with a logical address. Upon receipt of a read request, the processing device is to determine that a second logical address within the read request does not match the logical address associated with data stored at a physical address of the group of memory cells. The processing device is further to determine a number of first values within the plurality of flag bits, and in response to the number of first values not satisfying a threshold criterion, report, to a host computing device, an uncorrectable data error.

Abstract: The controller that controls a memory device includes: a processor suitable for controlling the memory device to perform a first soft read operation by using first soft read voltages; and an error correction code (ECC) codec suitable for performing a first soft decision decoding operation based on first soft read data obtained through the first soft read operation, wherein the processor controls the memory device to perform a second soft read operation with an additional read voltage, of second soft read voltages, that is different than any of the first soft read voltages and which is determined based on the first soft read data, according to whether the first soft decision decoding operation failed, and wherein the ECC codec performs a second soft decision decoding operation based on the first soft read data and second soft read data obtained through the second soft read operation.

Abstract: An array of memory cells might include a first data line, a second data line, a source, a capacitance selectively connected to the first data line, a string of series-connected non-volatile memory cells between the first data line and the capacitance, and a pass gate selectively connected between the second data line and the source, wherein an electrode of the capacitance is capacitively coupled to a channel of the pass gate.

Abstract: A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.

Abstract: The present application is applicable to the field of integrated circuit technology, and provides a data writing method, system, apparatus, device and medium for an integrated circuit chip. The data writing method is applied to a writer, the integrated circuit chip is electrically connected with the writer through a power-supply positive terminal and a power-supply negative terminal, and the data writing method includes: sending a data writing order to the integrated circuit chip, where the data writing order is configured to instruct the integrated circuit chip to enter a data writing mode after receiving the data writing order; and performing data writing to the integrated circuit chip by controlling an electrical parameter of an input voltage of the power-supply positive terminal or the power-supply negative terminal of the integrated circuit chip after the integrated circuit chip enters the data writing mode.

Abstract: A determination that a programming operation has been performed on a memory cell can be made. An amount of time that has elapsed since the programming operation has been performed on the memory cell can be identified. A determination as to whether the amount of time that has elapsed satisfies a threshold time condition can be made. In response to determining that the amount of time that has elapsed satisfies the threshold time condition an operation can be performed on the memory cell to change or maintain a voltage condition of the memory cell.

Abstract: A sense amplifier includes a voltage comparator with offset compensation, a first clamping device and a second clamping device. The voltage comparator is coupled to a bit line and a reference bit line respectively, and configured to compare a first input voltage and a second input voltage to output a sensing signal. The first clamping circuit and the second clamping circuit trim a voltage corresponding to the bit line and a voltage corresponding to the reference bit line respectively to match the voltage corresponding to the reference bit line with the voltage corresponding to the bit line.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including determining first values of a metric that is indicative of a margin for a valley that is located between programming distributions of a memory cell of the memory device. The operations further include determining second values of the metric based on the first values, and adjusting valley margins of the memory cell in accordance with the second values of the metric.

Abstract: An asynchronous power loss (APL) event is detected at a memory device. A last written page is identified in the memory device in response to detecting the APL event. A count of zeros programmed in the last written page is determined. The count of zeros is compared to a threshold constraint to determine whether to perform a dummy write operation on the last written page.

Abstract: Techniques related to methods and systems for improving a performance related to reading data stored in memory cells. The method includes selecting a first voltage read range and a second voltage read range from multiple voltage read ranges that are associated with a number of bits storable in a memory cell. The method includes receiving, a first set of parameters that represent a first probability distribution of first candidate voltage read thresholds within the first voltage read range. The method includes receiving a second set of parameters that represent a second probability distribution of second candidate voltage read thresholds within the second voltage read range. The method includes generating, based on an input to an objective function, a voltage read threshold. The method includes reading data stored in the memory cell based on the voltage read threshold.

Abstract: The Non-Volatile Arithmetic Memory Operator (NV-AMO) including a non-volatile memory cell for storing non-volatile data and a first input terminal for receiving volatile variable data is applied to perform the arithmetic operations over the volatile variable data and the non-volatile data. The NV-AMO can also be configured multiple-times for new computations. The constructions of NV-AMO in Arithmetic Logic Units (ALU) can be applied in DSP (Digital Signal Processor) computations and DNN (Deep Neural Network) computations.

Abstract: System, method and computer program product for prioritizing trial-and-error attempted corrections of bit/s, in a memory, in which logical bit levels are determined by thresholding voltage values using threshold/s, the method comprising ranking bits such that a first bit is ranked before a second bit, which is less likely than said first bit to be erroneous and sequentially attempting to correct the bits in order of the ranking, including attempting to correct the first bit before attempting to correct the second bit.

Abstract: Aspects of a storage device including a memory and a controller are provided which allow for reduction of current in open blocks during read operations using read voltage ramp rate control. The controller determines whether a block is open or closed. If the block is closed, the controller causes a read voltage to be applied to one of the block's word lines at a first ramp rate. If the block is open, the controller causes a read voltage to be applied to another of the block's word lines at a slower, second ramp rate. The controller further causes a read voltage to be applied to another word line of the open block at a different, third ramp rate. Thus, read voltages for open blocks may ramp slower than read voltages for closed blocks, as well as ramp at different rates for different word lines in open blocks.

Abstract: There are provided a memory device and an operating method thereof. The memory device includes memory cells connected between a bit line and a source line, a voltage generator for generating program voltages and verify voltages which are to be applied to a selected word line connected to a selected memory cell, a page buffer for storing data respectively sensed in verify operations using the verify voltages, and for transferring a program allow voltage, a program inhibit voltage or a program control voltage to the bit line by sequentially using the data, and a logic circuit for generating page buffer control signals for controlling the page buffer.

Abstract: A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell may be determined to a higher bit resolution than a data read value. A write condition may be selected for the RRAM cell, based on the cell characteristic. The RRAM cell may be written to, using the selected write condition.

Abstract: A method, apparatus and system to address memory cells in a memory array that includes address lines comprising wordlines (WLs) and bitlines (BLs). The method comprises: controlling a decoder circuitry of a memory array, the memory array including a plurality of WLs and a plurality of BLs, the decoder circuitry including a plurality of switches coupled respectively to the WLs, or respectively to the BLs; and causing a selected switch of the plurality of switches to change a bias of a corresponding selected address line coupled thereto from a floating bias at an idle state of the decoder circuitry to either a positive bias or a negative bias without changing a bias at deselected address lines corresponding to deselected switches of the plurality of switches from the floating bias at the idle state.

Abstract: A memory sub-system configured to improve performance using signal and noise characteristics of memory cells measured during the execution of a command in a memory component. For example, the memory component is enclosed in an integrated circuit and has a calibration circuit. The signal and noise characteristics are measured by the calibration circuit as a byproduct of executing the command in the memory component. A processing device separate from the memory component transmits the command to the memory component, and receives and processes the signal and noise characteristics to identify an attribute about the memory component. Subsequently, an operation related to data stored in the memory component can be performed based on the attribute.

Abstract: A method for determining an optimal threshold of a nonvolatile memory device, the method including: reading a page from a nonvolatile memory device with a default threshold and attempting to hard decode the page using the default threshold; reading the page two more times with a predetermined offset voltage when the hard decoding fails and attempting to soft decode the page using the default threshold; approximating an empirical distribution of successfully decoded bits with a Gaussian distribution for each level; finding an intersection of the Gaussian distributions; and setting the intersection as a new reading threshold and reading the page again with the new reading threshold.

Abstract: A storage device is disclosed herein. The storage device, comprises: a non-volatile memory including control circuitry and an array of memory cells formed using a set of word lines and a set of bit lines; and a reference current generator circuit configured to receive an input voltage from a voltage supply and generate therefrom a plurality of outputs, each output of the plurality of outputs used to generate one or more bias voltages/currents for one or more control signals. The control circuitry is configured to: receive a refresh read operation command; and adapt operation of the reference current generator circuit based on receiving the refresh read operation command. This proposal is also applicable for other test modes, such as SA stress, soft and preprogram, and SA test modes.

Abstract: A system includes a memory device having a plurality of dice and A processing device to perform operations, including determining a representative number of program-erase cycles performed across the plurality of dice. The operations further include tracking the representative number of program-erase cycles over time. The operations further include, in response to the representative number of program-erase cycles satisfying a first threshold criterion, adding an additional threshold voltage offset bin to a plurality of threshold voltage offset bins for the memory device, wherein each of the plurality of threshold voltage offset bins comprises a corresponding window of time after program of data to the memory device.

Abstract: The present disclosure includes apparatuses and methods related to refresh in memory. An example apparatus can refresh an array of memory cells in response to a portion of memory cells in an array having threshold voltages that are greater than a reference voltage.

Abstract: Readout circuit and magnetic memory are provided. The readout circuit includes a first charging capacitor with one end grounded and another end coupled to an output of a data unit; a first pre-charge module for charging the first charging capacitor; a first discharge control module for controlling a magnitude of a data voltage; a second charging capacitor with one end grounded and another end coupled to an output of a reference unit; a second pre-charge module for charging the second charging capacitor; a second discharge control module for controlling a magnitude of a reference voltage; and a sense amplifier for outputting readout signals.

Abstract: A flash memory and an operation method thereof are provided. The flash memory includes a plurality of memory cell strings and a pass voltage generator. Each of the memory cell strings includes a plurality of memory cells. The pass voltage generator is configured to provide a pass voltage to a plurality of word lines of a plurality of unselected memory cells of a selected memory string. During a reading operation, the pass voltage generator raises the pass voltage from a first voltage at a first time point, and raises the pass voltage to a second voltage at a second time point. The second voltage is lower than a target voltage times a preset ratio The first time point is earlier than a start time point of a bit line voltage received by the selected memory cell, and the second time point occurs at the start time point of the bit line voltage.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory includes a first word line including a plurality of first cells and a second word line adjacent to the first word line and including a plurality of second cells. The memory controller determines a read voltage to be used with respect to the plurality of the first cells, according to a plurality of adjacent voltages representing respective threshold voltages of the plurality of the second cells. The memory controller reads data from the first word line using a plurality of determined read voltages.

Abstract: Disclosed in some examples, are methods, systems, and machine readable mediums which compensate for read-disturb effects by shifting the read voltages used to read the value in a NAND cell based upon a read counter. For example, the NAND memory device may have a read counter that corresponds to a group of NAND cells (e.g., a page, a block, a superblock). Anytime a NAND cell in the group is read, the read counter may be incremented. The read voltage, Vread, may be adjusted based on the read counter to account for the read disturb voltage.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: The present disclosure includes apparatuses and methods related to sensing operations in memory. An example apparatus can perform sensing operations on an array of memory cells by applying a first signal to a first portion of the array of memory cells and a second signal to a second portion of the array of memory cells.

Abstract: A semiconductor memory device includes first and second bit lines, first and second memory transistors connected to the respective first and second bit lines, a source line connected to the first and second memory transistors, and a word line connected to gate electrodes of the first and second memory transistors. In an erase operation that erases data in the first and second memory transistors: a first erase voltage application operation is performed; an erase verify operation is performed on only one of the first and second memory transistors; and a second erase voltage application operation is performed without performing the erase verify operation on another of the first and second memory transistors.

Abstract: Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.

Abstract: Apparatuses and methods of directly accessing a memory space of a storage device by a host are provided. In one embodiment, a method of driverless access of a non-volatile memory of a non-volatile memory device by a host includes initializing a PCIe memory space mapping a portion of the non-volatile memory of the non-volatile memory device to a host memory space. The non-volatile memory is mapped through a PCIe link between the host and the non-volatile memory device. Load/store commands are sent to the PCIe memory space for driverless access. The method further includes negotiating an alignment size of the minimum transaction packet size to complete the load/store commands.

Abstract: The present disclosure includes apparatuses and methods related to sensing operations in memory. An example apparatus can perform sensing operations on an array of memory cells by applying a first signal to a first portion of the array of memory cells and a second signal to a second portion of the array of memory cells.

Abstract: According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to change a read level of the memory cell. The control unit controls write, read, and erase of the nonvolatile semiconductor memory device. The control unit changes the read level between a start of use of the nonvolatile semiconductor memory device and a timing after an elapse of a time.

Abstract: An apparatus comprising strings of non-volatile memory cells, a first set of pathways connected to the strings, and a second set of pathways connected to the strings. The first set of pathways have first impedances that depend on location of respective strings. The second set of pathways having second impedances. The apparatus also includes one or more control circuits configured to compensate for location dependent impedance mismatch between the first set of pathways and the second set of pathways during memory operations on the non-volatile memory cells.

Abstract: A ReRAM memory cell includes a ReRAM element, a programming circuit coupled to the ReRAM element and defining a programming circuit path in the ReRAM memory cell, and an erase circuit coupled to the ReRAM element and defining an erase circuit path in the ReRAM memory cell. The programming circuit path is separate from the erase circuit path.

Abstract: A method for initializing a channel in a non-volatile memory device comprising a memory block including a plurality of word lines and a plurality of string selection lines, includes applying a voltage to the plurality of string selection lines; converting a bit line passing through the block into a floating state; and a releasing the floating state of the bit line.

Abstract: A system includes a memory device storing a set of start voltage values, wherein the set of start voltage values each represent voltage levels used to initially store charges in performing operations to corresponding one or more memory locations of the memory device; and a processing device, operatively coupled to the memory device, to: determine whether a quantity of start voltage values in the set of start voltage values stored in the memory device meets a threshold; modify the set of start voltage values stored in the memory device to remove one or more start voltage values from the set in response to a determination that the quantity of start voltage values in the set meets the threshold; and add a new start voltage value to the modified set of start voltage values.

Abstract: A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell is determined to a finer resolution than a data read value. A write condition is selected for the RRAM cell, based on the cell characteristic. The RRAM cell is written to, using the selected write condition.

Abstract: A memory system includes a memory unit with a plurality of first memory cells connected to a first word line and a memory controller to control the memory unit to write data in page units equal in size to the number of first memory cells. The memory unit is configured to write a plurality of pages of data to the plurality of first memory cells and then read each page of data thus written. The memory controller determines whether or not each page of data, as read from the plurality of first memory cells, satisfies a predetermined condition, and registers a determination result for each page indicating whether the predetermined condition was satisfied.

Abstract: A nonvolatile semiconductor storage device includes a memory cell array layer that includes a plurality of nonvolatile memory cells connected in series in a vertical direction above a semiconductor substrate, a plurality of word lines respectively connected to gates of the plurality of nonvolatile memory cells, a select gate transistor layer that is located above the memory cell array and includes at least first and second select gate transistors connected in series in the vertical direction and to the plurality of nonvolatile memory cells, and at least first and second select gate lines respectively connected to the at least first and second select gate transistors, and a control circuit configured to execute a read operation on the nonvolatile memory cells, such that during a read period of the read operation, signals having different voltage levels are supplied to the at least first and second select gate lines.

Abstract: Provided are a non-volatile memory device and an erasing method thereof. The erasing method of the non-volatile memory device including a plurality of cell strings in which memory cells and selection transistors are connected, includes: performing a first erase operation based on an erase voltage provided to a first electrode of at least one of the selection transistors and an erase control voltage provided to a second electrode of the at least one of the selection transistors; determining whether there are slow erase cells by performing a multiple erase verify operation based on first and second verify voltages, the second verify voltage being higher than the first verify voltage; adjusting, when there are slow erase cells, the erase control voltage such that a voltage difference between the erase voltage and the erase control voltage increases; and performing a second erase operation based on the adjusted erase control voltage.

Abstract: Memories having a controller configured to perform methods during programming operations including applying a first voltage level to first and second data lines while applying a second, lower, voltage level to first and second select gates connected between the data lines and respective strings of memory cells; decreasing a voltage level of the first data line to a third voltage level; increasing a voltage level of the first select gate to a fourth voltage level; applying a fifth voltage level, higher than the first voltage level, to first and second access lines coupled to memory cells of the strings of memory cells; and increasing a voltage level of the first access line to a sixth voltage level.

Abstract: A ZR or ZR+ interface includes circuitry configured to receive one or more client signals; and circuitry configured to transmit the one or more client signals as an aggregate signal in a Flexible Ethernet (FlexE) format in one of a ZR format and a ZR+ format, including a mapping indicative of how the one or more client signals are one of multiplexed and subrated into the aggregate signal. The aggregate signal can have a rate that does not correspond to a standard Ethernet Physical Medium Dependent (PMD). The FlexE format can include a plurality of FlexE instances with at least one of the FlexE instances having calendar slots removed for a subrating application.

Abstract: Methods, systems, and devices for multiple plate line architecture for multideck memory arrays are described. A memory device may include two or more three-dimensional arrays of ferroelectric memory cells overlying a substrate layer that includes various components of support circuitry, such as decoders and sense amplifiers. Each memory cell of the array may have a ferroelectric container and a selector device. Multiple plate lines or other access lines may be routed through the various decks of the device to support access to memory cells within those decks. Plate lines or other access lines may be coupled between support circuitry and memory cells through on pitch via (OPV) structures. OPV structures may include selector devices to provide an additional degree of freedom in multideck selectivity. Various number of plate lines and access lines may be employed to accommodate different configurations and orientations of the ferroelectric containers.

Abstract: A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, a sense amplifier connected to the memory cell through the bit line, and a control circuit. The sense amplifier includes a sense node connected to the bit line, a first capacitive element connected to the sense node and a sense transistor having a gate connected to the sense node. The control circuit is configured to adjust a voltage applied to a back gate of the sense transistor or a source of the sense transistor to correct a variation of a threshold voltage of the sense transistor.

Abstract: To provide a semiconductor memory device capable of storing multi-value data while suppressing an increase in the threshold voltage set for a memory cell. A semiconductor memory device according to an embodiment includes a plurality of memory cell pairs, each having a first memory cell and a second memory cell. The first memory cell is configured so as to set at least one threshold voltage, whereas the second memory cell is configured so as to set a plurality of threshold voltages. Data stored in the memory cell pairs is defined using differences between the threshold voltages of the second memory cell and the threshold voltage of the first memory cell.

Abstract: According to one embodiment, a semiconductor memory includes a first memory cell array including a plurality of first memory cells; and a second memory cell array including a plurality of second memory cells. Each of threshold voltages of the first memory cells and the second memory cells is set to any of a first threshold voltage, a second threshold voltage higher than the first threshold voltage, and a third threshold voltage higher than the second threshold voltage. Data of three or more bits including a first bit, a second bit, and a third bit is stored using a combination of a threshold voltage of the first memory cell and a threshold voltage of the second memory cell.

Abstract: A data writing method for a rewritable non-volatile memory module having a plurality of physical erasing units and a memory control circuit unit and a memory storage apparatus using the same are provided. Each of the physical erasing units has a plurality of physical programming unit sets, and each of the physical programming unit sets has a plurality of physical programming unit. The method includes receiving data and arranging the data to generate a first data stream and a second data stream. The method also includes encoding the first data stream and the second data stream to generate a third data stream, and issuing a programming command sequence to write the first data stream, the second data stream and the third data stream respectively into a first physical programming unit, a second physical programming unit and a third physical programming unit of a physical programming unit set.