Abstract: Dynamic magnetic stripe communications devices may include a coil. An exchange coupled amorphous material may be inside the coil, for example, in the form of a ribbon. The exchange coupled amorphous material may include magnetically hard crystallites embedded in a soft magnetic amorphous matrix and/or at least one crystalline surface layer. A device may include a dynamic magnetic stripe communications device including one or more exchange coupled amorphous ribbons. The device may include more than one exchange coupled amorphous ribbon. Amorphous ribbons and/or layers of amorphous ribbons may be stacked (e.g., in alignment to one another) and/or offset at different heights. The ribbons may be in a single domain state without an external magnetic field, for example, an external magnetic field from a permanent magnet. The device may not include a permanent magnet.

Abstract: A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Abstract: Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable electrical property of the devices, and/or three-dimensional memory arrays of the same.

Abstract: A method of addressing a memory cell includes applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse. In addition, a memory includes a memory cell and a control circuit configured to address the memory cell by applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse.

Abstract: A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

Abstract: A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.

Abstract: A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.

Abstract: Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations.

Abstract: A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current through the storage area between the tip electrode and media electrode.

Abstract: A magneto-optical recording medium including a first magnetic layer (having film thickness t1 and saturation magnetization Ms1) and a second magnetic layer (having film thickness t2 and saturation magnetization Ms2) which are respectively made from a rare earth-transition metal alloy and sequentially laminated on a substrate to jointly make up a recording layer. Only the first magnetic layer or both the first and second magnetic layers contain a light rare earth element. At room temperature, a transition-metal sub-lattice magnetic moment is dominant in the first magnetic layer, whereas a rare earth sub-lattice magnetic moment is dominant in the second magnetic layer, respectively. Substantially, the directions to stabilize magnetization of the first and second magnetic layers are inverse from each other and the expression shown below is satisfied.t1.times.Ms 1-t2.times.Ms2.ltoreq.5 (.mu.m.times.emu/cm.sup.

Abstract: A semiconductor memory device is constructed of a lateral bipolar transistor as a load element. The base region of the lateral bipolar transistor has an impurity concentration which is increased from the upper surface of the base region in the depth direction of the base region.

Abstract: An improved magnetic bubble memory device includes a continuous propagator overlay on a sheet of magnetic material. The propagator overlay being adapted to reduce the statistical switching effects and overall coercivity of the propagator overlay. The propagator overlay consists of multiple layers of soft magnetic material being alternately arranged with non-magnetic material, in a geometric pattern specified so as to produce domain walls only internal to the pattern boundary, the soft magnetic material being chosen for its initial low coercivity characteristics and having characteristics approaching zero magneto-striction.

Abstract: Disclosed is a new magnetic storage medium including a layer of amorphous material typically GdDyFe whose Curie recording point (e.g. 120.degree. C.) is lower than its crystallization point (e.g. 350.degree. C.) to enable crystallization to cause variations in its optical properties such as transmittance or reflectivity for thermomagnetic writing. Reversible recordings are set up on the amorphous material layer by a thermomagnetic writing technique, for example Curie point writing, while unchangeable or permanent recordings are set up on the amorphous material layer through laser-activated crystallization of the amorphous material layer.

Abstract: A magneto-optic memory element consisting of a substrate provided with an amorphous layer of an alloy of a rare-earth metal and a transition metal. The layer has a uniaxial magnetic anisotropy. Such memory elements are suitable for storing digital information in the form of magnetized areas, the magnetizaiton direction of which can be read by means of the Kerr effect or Faraday effect. By adding bismuth to the alloy, the Kerr rotation and Faraday rotation can each be increased considerably, so that simpler reading of the stored information is possible.

Abstract: Amorphous ferrimagnetic layers are described with support stable and mobile magnetic charged walls. These layers can be used as drive layers in magnetic bubble domain devices, and are characterized by very weak even-fold in-plane anisotropy, or substantially zero in-plane anisotropy. The layers are metallic alloy compositions having magnetic properties that can be tailored over wide ranges, and are particularly suitable as drive layers for the propagation of bubble domains of extremely small diameters.

Abstract: A magnetic material of amorphous iron-nitride and a method for preparing the same are provided.

Abstract: A magnetic bubble domain storage device comprising a plurality of storage shift registers and at least one major shift register, which serves to provide bubble domains to the storage register and to receive bubble domains from the storage registers. A novel transfer switch, or gate, is located between each of the storage registers and the major register, which is typically configured in the conventional major/minor loop type of storage organization. This transfer switch can be made using single level masking or multiple level masking and is characterized in that the locus of bubble domain propagation paths through the switch element generally defines the letter "Y". These propagation paths are from one arm of the Y to the other arm, from one arm of the Y to the stem or base portion, or the reverse where a bubble domain travels from the stem (base) of the Y to one of the arms of the Y.

Abstract: A domain drag effect stripline pattern of conductive magnetic bubble material deposited upon a substrate is located in a magnetic bias field preferably normal to the plane of the stripline. Magnetic bubbles can be propagated through the stripline in response to passage of D.C. current pulses through the stripline. The width and cross-sectional area of the stripline is preferably substantially constant except at a switching area where it may be different, and preferably wider. There a coil is juxtaposed with the stripline to apply a magnetic field upon the switching area with the magnetic field varying above and below a critical value to switch the propagation of magnetic bubbles along the stripline on and off as a function of the current through the coil. Alternatively, the external magnetic bias field can be modulated to turn the stripline switch on and off.

Abstract: A magnetic bubble domain chip having two levels of metallurgy fabricated in a single masking step and including a replicate type bubble generator. The bubble generator includes a magnetic disk which holds a seed domain during reorientation of a magnetic drive field in the plane of the magnetic bubble material, and a conductor located at the leading, i.e., cutting, edge of the magnetic disk. Current in the conductor is used to assist the splitting operation whereby a new domain is split from the stretched seed domain. The conductor includes a first portion having a relatively wide cross-section where most of the current flows through a highly conductive material, such as gold. In the area of the generator, the conductor is narrow and the current path is through the magnetic material comprising the disk.

Abstract: A laminated, integral structure that forms a bubble memory plane for the generation, storage and transfer of single wall domains, bubble domains or bubbles is disclosed. The memory plane is formed of a non-magnetic gadolinium gallium garnet (GGG) support member; formed upon the support member is a magnetizable layer that is capable of sustaining stripe domains; formed upon the stripe domain layer is a non-magnetic gadolinium gallium garnet (GGG) spacer layer; and, formed upon the spacer layer is a magnetizable layer in which single wall domains or bubbles are capable of being generated, sustained and transferred from one position to another along a planar dimension of the bubble domain layer.

Abstract: A structure and technique are provided for improving the average access time in a bubble lattice file (BLF) storage, and for providing reordering capability in the lattice file. The bubble lattice arrangement includes a translation structure for moving bubble domains in the lattice to various access channels where columns of bubble domains can be removed from the lattice. These are double access channels which remove two adjacent columns of bubble domains at the same time. A read means and a write means are associated with each channel of the double channel access for reading the information in each column removed from the lattice, and for writing new information into these columns. A transposition structure is provided for transposing the information represented by bubble domains in each of the removed columns, in response to a signal from associated control circuitry.

Abstract: This bubble domain sensor is capable of sensing the presence or absence of a bubble at a predetermined location within bubble supporting material regardless of whether the bubble is stationary or moving through that location. A magnetostrictive material layer, such as a thin film having an area approximately equal to the area of a bubble domain, is positioned with respect to the bubble material such that it is magnetically influenced by the closure field of a bubble at the predetermined location. A conductor, such as a strip conductor, is positioned in contact with the magnetostrictive material. A sonic device launches sonic wave pulses which pass in the vicinity of the magnetostrictive material layer. The sonic wave pulse stresses the magnetostrictive material, and when the magnetostrictive material is magnetically influenced by a bubble, the stress changes or rotates its magnetization thereby inducing an electric signal in the conductor.

Abstract: A cylindrical magnetic domain element is disclosed which utilizes a cylindrical magnetic domain (a magnetic bubble) produced by the application of a bias magnetic field to a magnetic sheet of orthoferrite, garnet or the like. Propagation patterns for the cylindrical magnetic domain are composed of a plurality of sets formed on one side of the magnetic sheet and have a multilayer construction with a non-magnetic film of SiO.sub.2 or the like between the layers. This multilayer construction allows for the formation of a propagation pattern having a relatively narrow pattern gap. Further, the propagation pattern is disclosed as having uniaxial magnetic anisotropy, which facilitates the magnetic bubble propagation and ensures retaining of the magnetic bubble.

Abstract: A multi-state memory cell which uses magnetic bubble domains in uniaxial material is described. The cell includes a channel in which a number of stable bubble positions separated by barriers is formed and on which select conductors are positioned to switch a bubble from one stable position to another on a threshold basis by means of coincident currents. A cell in accordance with this invention may take the form of a four-state-two conductor cell, two-bistable-state two-conductor cell, multi-state six conductor cell and six-state three-conductor cell and include destructive or non-destructive readout.