Abstract: A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode.

Abstract: A voltage equal to the threshold value of a TFT (106) is held in capacitor unit (109). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (106). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit (109) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit (109) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.

Abstract: A voltage equal to the threshold value of a TFT (106) is held in capacitor unit (109). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (106). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit (109) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit (109) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.

Abstract: A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.

Abstract: An electronic device of the present invention includes a memory core formed on an insulative substrate and implemented by a substance that performs, when a current flows therethrough, electromigration and varies in at least part of its shape or at least part of its element composition ratio. Two electrodes are directly bonded to opposite ends of the memory core. A sense electrode is spaced from the memory core by a thin insulative film in the vicinity of one of the two electrodes. A current flowing through the memory core causes a diffusion element to concentrate around either one of the two electrodes, whereby data is written in the memory core. Charge migration from the sense electrode caused by the migration of the diffusion element is sensed to thereby read the data out of the memory core.

Abstract: A masked ROM of a flat cell structure has a plurality of bit-line diffusion layers formed in parallel in one direction in a semiconductor. substrate, a plurality of word lines formed on the bit-line diffusion layers orthogonally to the bit-line diffusion layers and channel regions between the bit-line diffusion layers beneath the word lines, wherein the word line is composed of a laminated layer of a first conductive layer and a second conductive layer on the channel regions and composed of the second conductive layer on the bit-line diffusion layers.

Abstract: A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall.

Abstract: A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal.

Abstract: Magnetic bubble memory in hybrid technology using rows of chevron patterns. The memory detection system has an active detection zone (4) constituted by rows of chevrons, in order to stretch into the form of a strip the bubbles from a propagation path (2), and a first detector (8); a bubble elimination zone (12) constituted by forcing back means (18) for stopping the advance of the bubbles and for forcing them outside the detection system; and a passive detection zone (6) located following the bubble elimination zone (12) and incorporating a second detector (9), to which no bubble must be exposed, in order to eliminate the unwanted signal due to the influence of a rotary magnetic field necessary for the propagation of the bubbles. According to the invention, elimination zone (12) is provided with at least one barrier (20) produced by ion implantation in order to block the passage of the bubbles from active zone (4) to passive zone (6).

Abstract: A duplicator in a magnetic bubble memory with non-implanted patterns, a process for realizing the duplicator and a serial - parallel magnetic bubble memory having at least one of the aforementioned duplicators are disclosed. In a magnetic bubble memory having a first group of aligned non-implanted patterns and a second group of aligned non-implanted patterns, the duplicator according to the invention is characterized in that it comprises an extension conductor and a breaking conductor, the extension conductor linking the first and second groups of patterns, the breaking conductor being positioned transversely with respect to the extension conductor, the geometry of the end pattern of the first group of patterns being such that the duplication position is a stable position and the geometry of the patterns of the second group adjacent the axis of the first group being such that the reception position of the duplicated bubble is a stable position.

Abstract: In a magnetic bubble memory device in which a major line and minor loops are constituted by ion-implanted tracks, a gate is constituted having two functions, i.e., having a replicate function and a pseudo swap function using conductor patterns of two layers that overlap on both the major line and on the minor loops. By controlling the pulsed current supplied to the conductor patterns of the two layers, the replicate function divides the bubble in the minor loop into two bubbles, so that one of the bubbles is taken onto the major line and is propagated to the detector. The pseudo swap function annihilates the bubble in the minor loop, divides the bubble on the major line into two bubbles and introduces one of them into the minor loop, thereby to realize the same function as that of the conventional swap gate.

Abstract: A magnetic bubble memory has a reading zone with thin detection elements, coated with an insulating layer which carries thick bubble propagation patterns of high magnetic permeability material, and a bubble stretching zone also including thick propagation patterns of shapes such that the rotating field of the device causes the bubbles to progress along the patterns. The device further includes, out of the detection zone, additional thin localized elements of high magnetic permeability material having a thickness much lower than that of the patterns, obtainable by photolithography and located at the same level as the thin detection elements. When located in the stretching zone, the thin patterns are arranged to cooperate with thick patterns so that the voltage well generated by the rotating field of the device has a substantially constant value while moving along the thick patterns.

Abstract: A magnetic bubble memory, in which the PI junction between a first propagation track defined by deposited patterns and a second propagation track defined by the boundary between an implanted zone and a non-implanted zone is defined by an overlap between such propagation tracks, wherein the overlap zone has a surface substantially equal to the surface of a magnetic bubble and forms a stable position for each of the two propagation paths.

Abstract: A bubble memory with a hybrid junction formed between a first propagation track defined by a boundary between an implanted area and a non-implanted area and a second propagation track defined by a sequence of deposited patterns. The overlap zone between the tracks has a surface substantially equal in size to the magnetic bubble. The boundary cleared by the magnetic bubble has a direction perpendicular to an easy magnetization axis of the magnetic material of the memory, and an implanted area is formed beneath one leg of the deposited pattern.

Abstract: In a magnetic bubble memory device employing ion-implanted tracks as minor loops for data storage, there is proposed a magnetic bubble memory element employing a minor loop having a folded structure and a turn composed of three tips formed convexly toward an ion-implanted area and two cusps as an inside turn for accomplishing the folding with a center as the ion-implanted area. In this inside turn, the line connecting between the two cusps of the turn includes a gradient in the range of 90 degrees to 120 degrees in relation to the ion-implanted straight line tracks.

Abstract: In a magnetic bubble memory having a first system of aligned ion-implanted patterns and a second system of aligned ion-implanted patterns, a swap gate having a transfer conductor for transferring a magnetic bubble from the second system to the first system, and an erase conductor for erasing the bubble to be replaced on the first system.

Abstract: A magnetic bubble memory device comprises contiguous-disk ion-implanted magnetic bubble propagation tracks formed by implanting selectively ions in a magnetic layer which can hold magnetic bubbles. At least one of the disks which form the ion-implanted bubble tracks and each of which may have a circular or square shape, is configured to include a combination of arcs of circles having different curvatures or a combination of sides of squares having different sizes.

Abstract: A hybrid magnetic bubble memory device includes, magnetic bubble propagation tracks formed of partial ion-implantation and bubble propagation tracks formed of a soft magnetic material pattern. At least one of the junctions between the two type tracks is located on a corner soft magnetic material pattern where the bubble propagation direction is changed, and the hairpin conductor is superposed on the part of the corner pattern under which the magnetic material is not ion-implanted to form ion-implanted propagation tracks.

Abstract: A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.

Abstract: The bubble memory comprises a magnetic layer in which the magnetic bubble can move under the action of a rotary field, a deposited pattern formed from a high permeability magnetic material and separated from the magnetic layer by an electrical insulating layer, a U-shaped electric conductor placed between the magnetic layer and the deposited pattern and electrically insulated therefrom, the deposited pattern covering the base of the internal space defined by the electric conductor and thus defining a nucleation position. The generator also comprises an implanted pattern produced in a fraction of the thickness of the magnetic layer, the implanted pattern at least covering the nucleation position.

Abstract: Process for producing a ferrimagnetic garnet layer having a high magnetic anisotropy on an amagnetic substrate, wherein it comprises the stages of forming at least one ferrimagnetic garnet layer by epitaxy from the amagnetic substrate, high dose ion implantation in the ferrimagnetic garnet layer in order to produce defects therein and heating the entity in the presence of a reducing agent to a temperature between 250.degree. and 450.degree. C.Application to the production of bubble stores with non-implanted propagation patterns.

Abstract: A magnetic bubble device has minor loops formed through ion implantation and used for storing information. As the density becomes higher, inside turn corner portions are formed on the minor loops. Dummy patterns having circular, triangular or other shapes are disposed in the vicinity of the corner portion. It is desirable that the minimum distance X between the dummy pattern and the propagation track satisfy the relation of 1.5 D.ltoreq.X.ltoreq.3.5 D, where D represents the diameter of a bubble.

Abstract: A high-density magnetic bubble memory device using magnetic bubbles having a diameter not larger than 2 .mu.m comprises a magnetic layer capable of sustaining the bubbles therein, and a propagation pattern formed in or on a surface of the magnetic layer. In the device, a relation H/d.ltoreq.0.8 is satisfied wherein H is the thickness of the magnetic layer and d the diameter of the bubble. When the propagation pattern is made of a permalloy, h/d (h: bubble height in that case) is not larger than 0.8. When the propagation pattern is formed through ion implantation, h'/d (h': bubble height in that case) is not larger than 0.6.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elments in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.

Abstract: A magnetic bubble memory is formed of a series of longitudinally oriented minor registers and at least one transversely oriented major access register, all of these registers having patterns with boundaries defined by ionically implanted zones of a magnetic garnet layer. The memory is formed also with a structure for transferring bubbles from one end of the minor register to the major register, and is further configured with layered material having a predetermined format for displacing the bubbles in each minor register upon application of a rotating magnetic field. The physical structure of the memory also permits a displacement of the bubbles of the major register by the circulation of currents in two electrically conductive sheets which are superimposed on the magnetic garnet layer.

Abstract: A magnetic bubble device includes ion-implanted bubble propagation tracks of meandering cord-like configuration to assure improved bubble propagation characteristic. Amplitude of a region in which inplane magnetization layer is absent or alternatively thickness thereof is smaller than that of other region, as measured in the direction perpendicular to the bubble propagating direction, is not greater than 7/8 of a pitch of the meandering pattern in the bubble propagating direction. The amplitude is more preferably selected so as to meet the condition that 1/4.ltoreq.W/P.ltoreq.3/4 for assuring much stabilized bubble propagating operation.

Abstract: A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.

Abstract: A magnetic bubble memory device is disclosed which is equipped with a minor loop of a magnetic bubble propagation track formed by ion implantation and a major loop or major line of a magnetic bubble propagation track consisting of a soft magnetic film and in which the thickness of an insulating film at at least the junction between the minor loop and the major loop or major line is less than the thickness of insulating film at the major line or major loop.

Abstract: A process for producing an ion implanted bubble device having bubble propagation tracks formed by implanting ions in a magnetic layer formed on a substrate. The process includes: implanting ions in the magnetic layer for forming a desirable bubble propagation track thereon; exposing the ion implanted magnetic layer to plasma in order to enhance the anisotropy field change .DELTA.Hk; coating an intermediate insulation film over the magnetic layer treated with plasma; and forming bubble propagation patterns of ferromagnetic material and/or conductor patterns of conductive material on the intermediate insulation film.

Abstract: A magnetic bubble memory device comprises minor loops for the storage of information and a major loop operably associated with the minor loops through gates, the minor loops being defined by an ion-implanted pattern and the gate portions of the major line being defined by patterns of magnetically soft material. This construction makes it possible to provide a high storage density and superior gate operating margins.

Abstract: A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.

Abstract: A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.

Abstract: A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.

Abstract: A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.

Abstract: The invention relates to a magnetic bubble memory having a first layer of monocrystalline magnetic material with at least one crystallographic axis having the property of being aplanar easy magnetization axis, whereby the first layer has groups of unimplanted, contiguous and aligned motifs, called first motifs, permitting the propagation of the bubbles into a second magnetic layer, positioned below the first magnetic layer, the first motifs being shaped in such a way that two cavities are defined between two first adjacent motifs, wherein each group of first motifs has an axis such that the first motifs of the group are arranged symmetrically with respect to the axis, the groups being arranged parallel to the crystallographic axis of the first layer of material, and wherein it comprises, associated with each group, an electrical conductor, called the first conductor, permitting the duplication of the bubbles, each conductor being arranged perpendicular to the crystallographic axis of the first layer of materi

Abstract: A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.

Abstract: A magnetic bubble store, using adjoining non-implanted motifs as bubble-propagating motifs, the store comprising 3n identical, electrically interconnected storage devices, n being a positive integer, which are produced on an identical circuit chip and each comprise minor loops for storing the bubbles, at least one major loop acting as an access loop for the minor loops, first electrical component enabling bubbles to be transferred from the minor loops to the major loop and vice versa, a second electrical component enabling bubbles to be produced on the major loop, and a third electrical component enabling the bubbles on the major loop to be detected, the third, identical component, each formed by an electric conductor for bubble extension and contraction and a magneto-resistive element, being disposed in directions making an angle of 120.degree. with one another.

Abstract: A hybrid magnetic bubble memory device includes a first magnetic bubble propagation tracks formed of a portion of the boundary between first and second regions of a magnetic medium film having uniaxial anisotropy and adapted to be applied with a magnetic field in a direction perpendicular to the magnetic medium film to generate magnetic bubbles therein, and a second magnetic bubble propagation tracks formed of a soft magnetic material film on the magnetic medium film and connected with the first magnetic bubble propagation tracks. The first region is implanted with ions under ion-implant conditions different from those for the second region, and thus the above boundary is produced.

Abstract: Herein disclosed is a laminated magnetic bubble device of a multiple layer structure composed of at least one thin magnetic film having low coercive force and vertically oriented anisotropy which can allow easy generation and erasure of a magnetic bubble, and at least one thin magnetic film having high coercive force and vertically oriented anisotropy which will not be affected by a magnetic field of low level used for generating the magnetic bubble in the thin film of low coercive force.

Abstract: This device comprises an ionically implanted magnetic garnet layer, in which are defined non-implanted patterns and an electrically conductive layer superimposed on the garnet layer and insulated therefrom. The patterns are islands which are separated from one another. The electrically conductive layer has a first conductive coating having windows parallel to the first direction for respectively displacing the bubbles located between the patterns of the first pairs of patterns arranged parallel to a first direction, by a pulse-type current parallel to a first direction. The electrically conductive layer also has a second conductive coating superimposed on the first conductive coating and insulated therefrom and which has windows parallel to a second direction in order to respectively displace the bubbles between the patterns of the second pairs of patterns arranged parallel to a second direction, by a pulse-type current parallel to a second direction.

Abstract: A magnetic bubble memory device comprises a magnetic bubble propagation track formed by ion implantation. A region enclosed by the propagation track and lightly or shallowly implanted with ions on a condition differing from that for forming the propagation track or not implanted with ions at all is provided with a island-like isolated region heavily or deeply implanted with ions on the same condition as that for forming the propagation track.

Abstract: A magnetic bubble memory device comprises an ion-implanted region for information storage formed in a surface of a magnetic material layer and a permalloy transfer path formed near an ion implantation transfer path defined by the edge of the ion-implanted region for reading information from the ion implantation transfer path or writing information in the ion implantation transfer path. The ion implantation depth in a portion of the ion-implanted region near the permalloy transfer path is continuously changed to provide an inclined edge of the ion-implanted region.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

Abstract: A magnetic bubble store including at least two series of longitudinally oriented major shift registers and a rotating magnetic field for producing a displacement of the bubbles in the minor registers. The series of minor registers are respectively arranged on either side of a transverse boundary. The minor registers of each of the series are constituted by motifs defined by ion implantation in a magnetic garnet layer. On either side of the boundary, these motifs define complementary distributions of implanted areas and non-implanted area.

Abstract: Hydrogen ion is implanted twice or more at different acceleration voltages into desired portions of a magnetic film holding magnetic bubbles to form a magnetic bubble propagation path. This ensures production of an ion-implanted device having a sufficiently large anisotropic magnetic field parallel to the magnetic film and a high Curie temperature.

Abstract: Ion-implanted bubble device comprises a magnetic layer in which bubble propagation paths are formed by ion-implantation. The bubble propagation path has an inside turn including a cusp of which the summit deviates toward a direction of bubble propagation with respect to a cusp center line. Such a bubble propagation path permits the ion-implanted bubble device adopting a folded minor loop organization to be realized.

Abstract: A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.

Abstract: A detector structure for contiguous-disk bubble devices has a non-ionimplanted elongated bar, a hairpin conductor and a thin-film magneto-resistive element. The elongated bar is positioned in spaced relation to a large period element at the end of a propagation loop. The elongated bar extends both above and below the large period element and prevents the bubble from passing around the element. The hairpin conductor is positioned over the edge of the bar that faces the end period element. The magneto-resistive element is positioned parallel to and at the center of the hairpin conductor.

Abstract: The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.

Abstract: A magnetic bubble memory has a first bubble propagation track formed with an ion-implanted pattern and a second bubble propagation track formed with permalloy members connected to each other to form a storage loop. The arrangement is such that a position of an attractive magnetic pole created in one of the permalloy members coincides with a position of an attractive charged wall appearing in the ion-implanted layer at a junction of the first and second bubble propagation tracks when a driving magnetic field is in a particular range of direction.