Abstract: Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second surface to the layer, the via hole having a first perimeter at the first surface; (d) forming an aperture in the layer, wherein the aperture has a second perimeter within the first perimeter; and (e) providing a conductive structure for sealing the via structure. Also provided are sealed via structures, methods of detecting leakage in a sealed device package, sealed device packages, device packages having cooling structures, and methods of bonding a first component to a second component.

Abstract: Semiconductor lasers, in particular Quantum Cascade Lasers (QCLs) are tuable especially in the mid-IR spectral range, e.g. in wavelengths of about 3-14 ?m, by precisely controlling the laser's temperature in the vicinity of the active region. The present invention introduces a novel design for locally heating the active region, thereby allowing fast heating and thus tuning a laser. It is generally applicable for lasers across the field, e.g. to QCLs with multi-color emitters or to Vertical-Cavity Single-Emitter Lasers (VCSELs) or to Distributed Feedback (DFB) lasers. Essentially, the invention consists of structurally integrating a heating resistor as part of the laser, placed close to the component to be temperature-controlled, i.e. the active region or the grating, etc., and feeding this resistor with a variable electrical current in order to locally control the thermal dissipation.

Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.

Abstract: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

Abstract: This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device.

Abstract: An optical device including a substrate formed of a light transmitting material and a light emitting layer formed on the front surface of the substrate. Both the front surface and the back surface of the substrate are parallel to each other and have substantially the same rectangular shape. The substrate has four side surfaces connecting the front surface and the back surface of the substrate. Each side surface of the substrate has a corrugated sectional shape such that a plurality of concave portions and convex portions are alternately formed.

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

Abstract: A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.

Abstract: A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract: An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film (1) having a first semiconductor material and an electron quantum film (2) having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film (4) having a third semiconductor material and separated by a first barrier layer (3), and the electron injector region (I) has at least one injector quantum film (5) having a fourth semiconductor material and separated by a second barrier layer (3).

Abstract: System and method for operating a single unit of light-amplifying medium, structured to produce light with a complex spatial spectrum including multitude of high-order spatial modes, in external cavity configured, in conjunction with an optical etalon installed intra-cavity, to reduce spatial spectrum of such light to provide an output containing smaller number of high-order spatial modes and, optionally, only the lowest spatial mode at power levels on the order of 1 W or higher (for example, tens or hundreds of Watts).

Abstract: The present invention provides a phosphor comprising a cerium-activated sialon crystal having a basic composition represented by formula (1): (Sr1-xCex)?Si?Al?O?N???formula: (1) (wherein, x is 0<x<1, ? is 0<??3, and ?, ?, ? and ? are numbers such that numerical values converted when ? is 2 satisfy 5???9, 1???5, 0???1.5, and 10???20), wherein the phosphor includes particles having a sphericity of 0.65 or more and emits yellow light by being excited by ultraviolet light, violet light or blue light.

Abstract: A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Abstract: There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.

Abstract: An electronic unit includes: an electronic device; and a protective film including an aluminum oxide layer and silicon oxide, the aluminum oxide layer with which the electronic device is covered, and the silicon oxide being scattered on a surface of the aluminum oxide layer.

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract: A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0<?<1.

Abstract: A high field of view, low height package and wafer-level packaging process are provided. The top surface of a first wafer has recesses defined by sidewalls, with a reflector, and a floor. The reflector is incident a horizontal light path form an edge-emitting diode on the floor, directing the light path vertically. A second optically diffusing wafer receives the vertically directed light. A vertical ring to surround each recess is wafer-level fabricated on one of the wafers. The vertical ring may have a high aspect ratio to increase light diffusion. The second wafer is connected above the first such that each vertical ring encloses its corresponding recess and such that the light vertically exits the optically diffusing media after spanning the height of the vertical ring. Diode electrical connections are provided for externally controlling the diode. Individual packages are separated by double-dicing the connected wafers between the recesses.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.

Abstract: The present disclosure relates to a light source device. The light source device includes: a semiconductor laser device having a heat dissipation face; a heat dissipation member in contact with a light emission side of the semiconductor laser device out of the heat dissipation face, the heat dissipation member having a window that emits light from the semiconductor laser device, and a wind-blocking tube provided inside the window.

Abstract: A device for producing white light includes a light conversion module and a light source. The light conversion module includes undoped metal oxide powder comprising particles having a size of less than 50 nm. The light source generates excitation light having a wavelength in the near infrared region. The excitation light is directed towards the undoped metal oxide powder, the undoped metal oxide powder is excited with the excitation light, and the excited undoped metal oxide powder emits white light having a continuous spectral distribution in the range of 440 nm to 900 nm.

Abstract: The problem to be solved is to provide a semiconductor light emitting device attaining the improvement of the color rendering property in addition to the improvement of the light emission efficiency. The semiconductor light emitting device of the present invention including a cut filter configured to absorb light having a short wavelength equal to or less than 430 nm and transmit light having a long wavelength greater than 430 nm, wherein in a spectrum of the light emitted by the semiconductor light emitting device, light emission peak intensity deriving from the emitted light of the semiconductor light emitting element with respect to maximum intensity of the spectrum is equal to or lower than 50%. The above-mentioned problem is solved by using the semiconductor light emitting device.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.

Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.

Abstract: The 2D-PC vertical cavity surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation.

Abstract: A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Abstract: The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region (4), a current injection layer (3) and an undoped bottom semiconductor mirror (2). The current injection layer (3) is arranged between the active region (4) and the bottom semiconductor mirror (2). At least an upper layer of the substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between the bottom semiconductor mirrors (2) of said VCSELs to said upper layer of said substrate (1). A metallization (9) electrically connects the upper layer of the substrate (1) with the current injection layer (3) through said trenches (8) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.

Abstract: A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.

Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

Abstract: Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates for a number of applications, many of which are in the field of communications. The thinness of these platelets and the precision with which their dimensions are defined using the process described herein makes it conducive to assemble them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. This technology has been used to integrate edge emitting lasers onto silicon substrates, a significant challenge in the field of silicon optoelectronics.

Abstract: A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.

Abstract: An external cavity laser comprises a gain medium and an external cavity resonator without the use of a semi-reflective surface placed between the gain medium and the resonator. Radiation from the gain medium is reflected back to the gain medium by one or more resonant backscattering regions of the resonator, such that the entire optical path between the gain medium and the external cavity resonator could be free from a reflective surface.

Abstract: A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.

Abstract: A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction.

Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.

Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Abstract: Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.

Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.

Abstract: A surface emitting semiconductor laser includes a first semiconductor multilayer reflector of a first conductivity type, an active area, a second semiconductor multilayer reflector of a second conductivity type, a current confinement layer having a conductive area and a surrounding high-resistance area, each provided on a substrate, and a higher-order transverse mode suppressing layer formed on an emission surface from which laser light is emitted and in an area in which higher-order transverse mode is induced. The higher-order transverse mode suppressing layer includes first to third insulation films having first to third refractive indices, respectively, formed on each other, and capable of transmitting an oscillation wavelength. The second refractive index is lower than the first refractive index. The third refractive index is higher than the second refractive index. The optical film thickness of the first to third insulation films is an odd number times one-fourth of the oscillation wavelength.

Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: A quantum cascade laser includes a plurality of active layers, each of active layers including a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, a third barrier layer, a third quantum well layer, and a fourth bather layer provided in this order along a predetermined direction; a plurality of injection layers; and a core layer having the active layers and the injection layers, the active layers and the injection layers being alternately provided along the predetermined direction to form a cascade structure. The first quantum well layer has a film thickness larger than a film thickness of the second quantum well layer. The second quantum well layer has the film thickness larger than a film thickness of the third quantum well layer. In addition, the second barrier layer has a film thickness smaller than a film thickness of the third bather layer.

Abstract: A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InxAlyGa1-x-yN (0<x<1, 0?y<1, and 0<x+y<1) and disposed on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer. The lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater.

Abstract: A method of stably manufacturing a p type nitride semiconductor layer using a carbon dopant is provided. A crystal plane substrate is prepared having a main surface which has an offset angle in a range of +/?0.1% with respect to a C-plane or a crystal plane equivalent to the C-plane; and during a time period in which a III-source gas and a V-source gas are supplied to grow a III-V group nitride semiconductor layer, carbon tetrabromide (CBr4), which is a carbon source gas, is supplied so as to introduce carbon into a V-group atom layer.

Abstract: An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

Abstract: Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second surface to the layer, the via hole having a first perimeter at the first surface; (d) forming an aperture in the layer, wherein the aperture has a second perimeter within the first perimeter; and (e) providing a conductive structure for sealing the via structure. Also provided are sealed via structures, methods of detecting leakage in a sealed device package, sealed device packages, device packages having cooling structures, and methods of bonding a first component to a second component.