Abstract: An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.

Abstract: Methods, devices and systems for improving single-frequency operation of diode lasers are described. One such method includes ramping up an operational current of a diode laser for a first predetermined number of steps, and measuring an associated current value indicative of optical power within the laser diode for each of the first predetermined number of steps. Next, operational current of the diode laser is ramped down for a second predetermined number of steps, and an associated current value indicative of optical power within the laser diode is measured for each of the second predetermined number of steps. Using the measured data current values at which a mode hop or a multimode operation is likely to occur are identified, and a contiguous range of operating currents that is devoid of identified likely mode hops or multimode regions of operation is determined as the operating current range of the diode laser.

Abstract: A method of operating an optoelectronic device comprising an optical waveguide section, the optical waveguide section comprising a semiconductor core, the method comprising the steps of determining (401) a range for a negative bias voltage for the waveguide section for which an optical loss of the core is lower than an optical loss at zero bias for an operating wavelength range of the device, selecting (402) a bias voltage within the range and applying (403) the selected bias voltage to the waveguide section.

Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

Abstract: An apparatus, including a waveguide, a first circuit, a second circuit. The waveguide is connected to the first circuit and the second circuit. The first circuit is located within a cryostat.

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

Abstract: Structures for an edge coupler and methods of fabricating such structures. The structure includes a back-end-of-line stack located over a substrate. The back-end-of-line stack includes a waveguide core having a longitudinal axis and a tapered section with a width that varies with position along the longitudinal axis based on a non-linear function.

Abstract: Provided are a laser device and a method of transforming laser spectrum, which provide a laser frequency stabilization and significant narrowing a laser spectrum. A laser device includes at least one multiple longitudinal mode laser (L) for generating a laser light having a spectrum of multiple longitudinal modes; at least one high quality factor (high-Q) microresonator (M) optically feedback coupled to the at least one multiple longitudinal mode laser (L); and a tuner (TU) for tuning the spectrum of multiple longitudinal modes of the laser light. The laser device is configured to output an output laser light having an output spectrum with at least one dominant longitudinal laser mode each at a reduced linewidth of the dominant longitudinal laser mode. The laser device allows increasing an emission power of a narrow linewidth lasing without an additional amplification while keeping a compact size of a device with a limited number of optical elements.

Abstract: A photonics frequency comb generator includes two integrated dies: an indium phosphide die laser of a first wavelength is grown on from, and a silicon photonics die having a microring resonator connected to the laser and frequency modulators. The microring resonator converts the first wavelength into a number of second wavelengths. One type of the microring resonator is a hybrid non-linear optical wavelength generator, comprising non-silicon materials, such as SiC or SiGe built on silicon to yield a non-linear wavelength generation. The second wavelengths are generated by adjusting the ring's geometric size and a distance between the ring and the traverse waveguide. Another type of microring resonator splits the first wavelength into a plurality of second wavelengths and transmits the multiple second wavelengths to filters and modulators, and each selects and modulates one of the second wavelengths in a one-to-one relationship.

Abstract: Structures for a coupler and methods of forming a structure for a coupler. A structure for a directional coupler may include a first waveguide core having one or more first airgaps and a second waveguide core including one or more second airgaps. The one or more second airgaps are positioned in the second waveguide core adjacent to the one or more first airgaps in the first waveguide core. A structure for an edge coupler is also provided in which the waveguide core of the edge coupler includes one or more airgaps.

Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

Abstract: A substrate for mounting a light-emitting element includes a substrate with a plate shape and a base that protrudes from a front surface of the substrate, wherein the base has a mounting part for mounting a light-emitting element on a top surface thereof and composes a sloping surface that slopes with respect to the front surface and the substrate and the base are integrally formed of a ceramic.

Abstract: The invention relates to an edge-emitting semiconductor laser comprising —at least two laser diodes, each of which is designed to generate electromagnetic radiation, wherein —the laser diodes are arranged on top of one another in a vertical direction, —the laser diodes are monolithically connected to one another, and —at least one frequency-stabilizing element is arranged in an end region of the laser diodes. The invention also relates to a method for producing an edge-emitting semiconductor laser.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

Abstract: A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.

Abstract: A method of power control of an optical signal transmitted by a first network element. The first network element comprising a laser and a bandpass filter operating on the optical signal produced by said laser, whereas the method comprises receiving (106) information indicative of a power level of the optical signal transmitted by the first network element; and tuning (110) the laser output wavelength in response to said received information.

Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.

Abstract: A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

Abstract: A light source device includes: a laser diode including an emission end surface for emitting laser light and a rear end surface opposite to the emission end surface; a reflecting member that reflects a portion of the laser light emitted from the emission end surface of the laser diode; a photodetector configured to detect light that is reflected at the reflecting member; and a light-shielding member disposed between the rear end surface of the laser diode and the photodetector, the light-shielding member configured to shield at least a portion of light emitted from the rear end surface of the laser diode.

Abstract: A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Abstract: The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

Abstract: End-face coupling structures within an electrical backend are provided via photonic integrated circuit (PIC), comprising: a first plurality of spacer layers; a second plurality of etch-stop layers, wherein each etch-stop layer of the second plurality of etch-stop layers is located between two spacer layers of the first plurality of spacer layers; and an optical coupler comprising a plurality of waveguides arranged as a waveguide array configured to receive an optical signal in a direction of travel, wherein each waveguide of the plurality of waveguides is located at a layer interface defined between an etch-stop layer and a spacer layer. Portions of the PIC can be formed by depositing layers of spacer and etch-stop materials in which cavities are formed to define the waveguides when the waveguide material is deposited or interconnects when a metal is deposited therein.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Abstract: The present disclosure is a light-emitting diode (LED) with oxidized aluminum nitride (oxidized-AlN) film, which includes a substrate, an aluminum nitride buffer (AlN-buffer) layer, an oxidized-AlN film and a light-emitting diode epitaxial structure. The AlN-buffer layer is disposed on a patterned surface of the substrate, wherein the patterned surface is formed with a plurality of protrusions and a bottom portion. The oxidized-AlN film is disposed on the AlN-buffer layer on the protrusions, and with none disposed on the AlN-buffer layer on the bottom portion. The LED epitaxial structure includes gallium nitride compound crystal formed on the oxidized-AlN film and the AlN-buffer layer, to effectively reduce defect density of the gallium nitride compound crystal and to improve a luminous intensity of the LED.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: A light source includes a substrate with a first surface and an opposite second surface. An epitaxial layer is positioned on the first surface of the substrate. The light source also includes at least one light generator in the epitaxial layer positioned such that an optical signal transmitted thereby is directed toward the substrate. A diffuser is positioned on the second surface of the substrate, and at least one monitor photodetector is positioned in the epitaxial layer in an arrangement configured to receive a portion of the optical signal which is reflected by the diffuser. In one form, the light generator may include a vertical cavity surface emitting laser (VCSEL).

Abstract: A laser array (100) is described herein, wherein the laser array comprises semiconductor lasers (102, 104) that are precisely controlled such that an optical beam output by the laser array has desired shape and direction.

Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.

Abstract: Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: This disclosure relates to the layout of optical components included in a photonics integrated circuit (PIC) and the routing of optical traces between the optical components. The optical components can include light sources, a detector array, and a combiner. The optical components can be located in different regions of a substrate of the PIC, where the regions may include one or more types of active optical components, but also may exclude other types of active optical components. The optical traces can include a first plurality of optical traces for routing signals between light sources and a detector array, where the first plurality of optical traces can be located in an outer region of the substrate. The optical traces can also include a second plurality of optical traces for routing signals between the light sources and a combiner, where the second plurality of optical traces can be located in regions between banks of the light sources.

Abstract: In integrated optical structures (e.g., silicon-to-silicon-nitride mode converters) implemented in semiconductor-on-insulator substrates, wire waveguides whose sidewalls substantially consist of portions coinciding with crystallographic planes and do not extend laterally beyond the top surface of the wire waveguide may provide benefits in performance and/or manufacturing needs. Such wire waveguides may be manufactured, e.g., using a dry-etch of the semiconductor device layer down to the insulator layer to form a wire waveguide with exposed sidewalls, followed by a smoothing crystallographic wet etch.

Abstract: The disclosure relates to an LED chip, an LED array and an LED packaging method. By adding a reflecting layer on the periphery of the LED, the reflecting layer adjusts the emission direction of light emitted by a light-emitting layer of the LED, so that the adjusted emission direction is more concentrated to a certain required illumination direction, and the light emitted by the light-emitting layer is prevented from irradiating adjacent LEDs and thereby causing interference to the adjacent LEDs. Therefore, according to the method provided by the disclosure, the light field directivity of the emitted light beam is improved, the embodiment is easy to operate with convenient implementation and improved LED performance, providing convenience for a user to use an LED lamp.

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: A laser system includes a resonant laser cavity configured to output a laser signal. The system also includes a utility waveguide configured to receive the laser signal from the laser cavity. The utility waveguide includes a perturbation region that is external to the laser cavity and receives the laser signal from the laser cavity and outputs a laser beam. The perturbation region includes one or more perturbation structures that each causes one or more perturbation(s) in the index of refraction of the utility waveguide. The perturbation structures are selected to provide optical feedback to the resonant laser cavity such that a power versus wavelength distribution in the laser beam is different from the power versus wavelength distribution that would be in the laser signal in the absence of the perturbation structures.

Abstract: A light emitting device includes a wiring board having a first wiring layer and a second wiring layer adjacent to the first wiring layer via an insulating layer, and a laser having a cathode electrode and an anode electrode, mounted on the wiring board, and driven through low-side driving. The first wiring layer includes a cathode wire connected to the cathode electrode, an anode wire connected to the anode electrode, and a first reference potential wire connected to a reference potential. The second wiring layer includes a second reference potential wire connected to the reference potential. An area of an overlap between the second reference potential wire and the anode wire is larger than an area of an overlap between the second reference potential wire and the first reference potential wire.

Abstract: An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and ?>? and ?>0 are satisfied where ? is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and ? is the contact area included in a half region on the second facet side.

Abstract: This application describes a wavelength-tunable laser apparatus, which reduces complexity of wavelength tuning of a laser. The laser includes a reflective gain unit, an optical phase shifter, a coupler, and a passive filter unit array. Furthermore, an output port of the reflective gain unit is connected to an input port of the optical phase shifter, an output port of the optical phase shifter is connected to an input port of the coupler, a first output port of the coupler is connected to an input port of the passive filter unit array, and a second output port of the coupler is an output port of the laser. The passive filter unit array includes a plurality of passive filter units, where any two of the plurality of passive filter units have different wavelength tuning ranges, and each filter unit has a linearly tunable wavelength.

Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.

Abstract: A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

Abstract: An optical semiconductor device includes an insulative base having first and second surfaces, and a metallic pattern formed on the first surface and including a grounding pattern, a transmission pattern having a line connected between input and output ends thereof, and first and second patterns, where the first pattern is located between the second surface crossing a direction parallel to the first surface, and the second pattern. The device includes a laser chip, mounted on the first surface between the transmission pattern and the first and second patterns, and having an electrode and a light emitting end located between the electrode and the second surface, a first wire connecting the output end to the electrode, a second wire connecting the electrode to the first pattern, an inductor provided on the first surface connected between the first and second patterns and formed by a meander wiring or a bonding wire.

Abstract: An optical component includes: an upper surface; a lower surface; a first light reflecting surface extending at least partially between the upper surface and the lower surface, the first light reflecting surface comprising a flat surface; and a rounded region formed between the first light reflecting surface and the lower surface. An angular edge is located at a first light reflecting surface side of the upper surface.

Abstract: A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

Abstract: A semiconductor optical integrated device comprises a semiconductor amplifier and a plurality of semiconductor lasers, wherein the semiconductor amplifier and the semiconductor lasers are monolithically integrated on a semiconductor substrate, an n-side cladding layer of the semiconductor amplifier and an n-side cladding layer of each of the semiconductor lasers are electrically insulated by an insulating layer formed between the semiconductor substrate and the n-side cladding layer of the semiconductor lasers and an insulating layer formed between the n-side cladding layer of the semiconductor amplifier and the n-side cladding layer of the semiconductor lasers, the n-side cladding layer of the semiconductor lasers and the p-side cladding layer of the semiconductor amplifier is configured to be electrically connected, and the semiconductor amplifier and each semiconductor laser of the plurality of semiconductor lasers are electrically connected in series.