Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: The invention makes it possible to adjust the light intensity of a laser scanning microscope laser beam in an economical manner and with high accuracy. A separate acousto-optic component can be omitted in that a light modulation section such as an electroabsorption modulator (EAM) or a semiconductor amplifier (SOA) is arranged directly at the laser diode, advisably at one of its front sides. It is nevertheless possible to control the light intensity economically and with high accuracy because the important parameters of the laser beam remain unchanged when the optical output power is changed by the light modulation section. The light modulation section is preferably formed integral with the laser diode in at least one material layer.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material.

Abstract: A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 ?m and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.

Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Abstract: Integrated are: semiconductor lasers of distributed feedback type that oscillate in single mode at emission wavelengths different from one another; a coupler that has as many input ports as the semiconductor lasers, the input ports to which output light from the semiconductor lasers are input, the coupler guiding and outputting the output light; and an amplifier that amplifies the output light from the coupler, and a predetermined relation holds true, where “N” is the number of the semiconductor lasers, “Ldfb” is a cavity length of each of the semiconductor lasers, “??0” is a spectral linewidth of laser light output therefrom, “Lsoa” is an amplifier length of the amplifier, “A” is an amplification factor of the amplifier, “??” is a spectral linewidth of amplified laser light output therefrom, and “R” is ??/??0.

Abstract: Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an axis of optical signal transmission of the VCSEL is substantially parallel to an axis of optical signal reception by the photodiode.

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

Abstract: An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.

Abstract: A circuit arrangement may include an input for coupling to a supply voltage; n semiconductor light source units comprising a driver device; wherein the units are coupled in parallel, wherein each driver device comprises a PWM controller. A respective controller is designed to provide a PWM signal at a respectively predefinable frequency to a control electrode of a respective converter switch. The arrangement includes current measuring devices which are designed for measuring the current through a respective string having at least one semiconductor light source; and a control device having control outputs, wherein each controller has a clock input, wherein a respective control output is coupled to a respective clock input of the controllers, wherein the control device is designed to provide clock signals at its control outputs, said clock signals being phase-shifted by 360°/n with respect to one another.

Abstract: The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.

Abstract: A method for operating a laser device, which has a laser-active solid-state body including a preferably passive Q switch, in which pumped light is applied to the laser device in order to generate a laser pulse. The laser device and/or an optical link between the laser device and a pumped light source supplying the pumped light is at least partially acted upon by an optical test pulse in order to check the integrity of a/the optical link between the laser device and a pumped light source supplying the pumped light.

Abstract: The invention provides a semiconductor light-emitting device having a monolithically integrated master laser, such as a distributed-Bragg-reflector (DBR) master laser, and injection-locked ring slave laser with modulated photon lifetime for optical communication beyond 100 GHz.

Abstract: A device for transformation of concentrated solar energy including a photovoltaic cell and laser device, which includes a first reflecting mirror adapted for entry of a beam of solar rays and a second reflecting mirror adapted for an outlet of a laser beam, with the first reflecting mirror reflective on an outlet wavelength of the laser beam and transparent to a totality of a solar spectrum and the second reflecting mirror partially reflective on the wavelength of the laser beam, reflective in an interval of the solar spectrum which is absorbed and transparent in other wavelengths different to these, and at the outlet of the laser beam. The device includes a nucleus doped with substances for total or partial absorption of the solar spectrum and coatings.

Abstract: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.

Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 ?m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.

Abstract: A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.

Abstract: A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

Abstract: A laser assembly (10) for providing a beam (20) includes a gain chip (12) and an axisymmetric optical assembly (16). The gain chip (12) emits an astigmatic, output beam (14). The optical assembly (16) adjusts the output beam (14) so that an adjusted output beam (20) has an adjusted first axis divergence angle and an adjusted second axis divergence angle. In certain embodiments, a magnitude of the adjusted first axis divergence angle is approximately equal to a magnitude of an adjusted second axis divergence angle in the far field.

Abstract: A diode laser includes a p-contact layer, a n-contact layer, and a wafer body disposed between the p-contact layer and the n-contact layer, the wafer body having a front end and a back end. The diode laser further includes a first grating comprising a plurality of grooves defined in the wafer body and extending between the front end and the back end at a first tilt angle, and a second grating comprising a plurality of grooves defined in the wafer body and extending between the front end and the back end at a second tilt angle, the second tilt angle opposite to the first tilt angle. A coupling region is defined in the wafer body by interleaving portions of the first grating and the second grating. The interleaving portions provide coherent coupling of laser beams flowing through the first grating and the second grating.

Abstract: Dry oxygen, dry air, or other gases such as ozone are hermetically sealed within the package of the external cavity laser or ASE swept source to avoid packaging-induced failure or PLF. PIF due to hydrocarbon breakdown at optical interfaces with high power densities is believed to occur at the SLED and/or SOA facets as well as the tunable Fabry-Perot reflector/filter elements and/or output fiber. Because the laser is an external cavity tunable laser and the configuration of the ASE swept sources, the power output can be low while the internal power at surfaces can be high leading to PIF at output powers much lower than the 50 mW.

Abstract: An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0<x<0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0?y?1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon.

Abstract: A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.

Abstract: In accordance with one embodiment of the present disclosure, a DBR laser diode is provided where the wavelength selective grating of the laser diode is characterized by an aperiodically shifted grating phase ? and a Bragg wavelength ?B. The aperiodically shifted grating phase ? is substantially symmetric or substantially ?-shifted symmetric relative to a midpoint CL or shifted midpoint CL* of the DBR section. The phase ? of the wavelength selective grating is characterized by aperiodic phase jumps of magnitude ?J1, J2, . . . and segment lengths l0, 1, . . . . The phase jumps of the wavelength selective grating are arranged substantially symmetrically about a midpoint CL or shifted midpoint CL* of the DBR section along the optical axis of the DBR laser diode. At least two phase jumps reside on each side of the midpoint CL or shifted midpoint CL* of the DBR section.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.

Abstract: The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window. The VCSEL device thus fabricated is heat-resistant, humidity-resistant, and highly reliable. In a preferred embodiment, the oxidation process takes place at an oxidizing rate of less than 0.4 ?m/min, and the passivation layer is a SiON passivation layer.

Abstract: A light outputting device includes, a substrate, a vertical cavity surface emitting laser (VCSEL) provided on a surface of the substrate, including a light emitting surface which emits a light, and a monitoring detector provided on the light emitting surface of the VCSEL to receive a part of the light emitted from the VCSEL so as to monitor the amount of the light emitted from the VCSEL.

Abstract: A method of fabricating a laser diode structure is provided where a photolithographic process is utilized to form at least a portion of an axially extending waveguide structure such that a patterned photoresist remnant resides over the axially extending waveguide structure following the photolithographic process. A patterned isolated opening and a lift-off photoresist portion are formed in the patterned photoresist remnant by subjecting the patterned photoresist remnant to an additional photolithographic process such that the lift-off photoresist portion remains in residence over the axially extending waveguide structure following the additional photolithographic process. An insulating layer is formed over the patterned isolated opening and the lift-off photoresist portion.

Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: Dry oxygen, dry air, or other gases such as ozone are hermetically sealed within the package of the external cavity laser or ASE swept source to avoid packaging-induced failure or PIF. PIF due to hydrocarbon breakdown at optical interfaces with high power densities is believed to occur at the SLED and/or SOA facets as well as the tunable Fabry-Perot reflector/filter elements and/or output fiber. Because the laser is an external cavity tunable laser and the configuration of the ASE swept sources, the power output can be low while the internal power at surfaces can be high leading to PIF at output powers much lower than the 50 mW.

Abstract: A laser diode capable of reducing a radiating angle ?? in the vertical direction, an optical pickup device, an optical disk apparatus, and optical communications equipment, all equipped with the laser diode which increases optical coupling efficiency. It has a first cladding layer of the first conductive type formed on a substrate, with an active layer on top of the first cladding layer and a second cladding layer of the second conductive type on top of the active layer. In at least the first or second cladding layer, it is formed of at least one optical guide layer having a higher refractive index than the first or second cladding layer and operating to expand a beam waist in the waveguide. This operation contributes to widening a region in which to shut up light, enabling a radiating angle ?? in the vertical direction to be reduced.

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Abstract: The invention relates to a device for generating electromagnetic THz radiation with free electron beams, comprising a dynatron tube, where the dynatron tube comprises an electron source, an extraction grid, and, an anode preferably coated with a material composition for high secondary electron emission, arranged in vacuum. The dynatron tube is connected to a voltage supply supplying an extractor voltage and an anode voltage and the extractor voltage is higher than the anode voltage. An oscillator modulates the anode voltage and the anode voltage is set to a work point voltage.

Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

Abstract: A system comprising a multiplicity of quantum dot lasers disposed on a back surface of a control circuit, wherein each of the quantum dot lasers produces coherent light; a multiplicity of micro-lens collimators, each micro-lens collimator secured to a corresponding quantum dot laser, where light generated by the quantum dot laser passes through the fiber and exits at the tip; a diffraction grating, wherein the light from each of the micro-lens collimators is directed to the diffraction grating; and wherein the coherent light leaving the diffraction grating is a high powered optical light.

Abstract: A photonic package includes a photonic device having a photon emitter on the front side of the die. A beam of photons from the photon emitter passing from the front side to the backside of the die, passes through the substrate material of the die which is substantially transparent to the beam of photons, to the backside of the die. Other embodiments are also described.

Abstract: The invention relates to light sources and displays incorporating blue laser pumped light sources that provide green light. According to a first aspect of the invention, a green light source includes a semiconductor diode laser emitting light in an optical path having a dominant wavelength within the blue spectral region, a substrate positioned in the optical path of the semiconductor diode laser, and a material coupled to the substrate. The material is selected to absorb light emitted by the semiconductor diode laser and, in response, to emit light having a dominant wavelength within the green spectral region. According to a second aspect of the invention, an apparatus includes a lighting module for a display, the lighting module includes an array of red laser light sources, an array of blue laser light sources, and an array of green light sources according to the first aspect of the invention.

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: The optical device includes a Fabry-Perot laser positioned on a base. A modulator is also positioned on the base so as to receive the output from the laser. The modulator is a Franz-Keldysh modulator that uses the Franz-Keldysh effect to modulate light signals. The laser and modulator are configured such that the modulator modulates the output from the laser and also such that the temperature dependence of the modulator tracks the temperature dependence of the laser.

Abstract: A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light with a wavelength at which the one of the gain peaks and one of the reflection peaks coincides. In the present LD, both the gain spectrum and the reflection spectrum are modified by adjusting the temperature of the SG-DFB region and that of the CSG-DBR region independently.

Abstract: An electronic device comprising a multilayer semiconductor structure formed by a periodic structure having a first semiconductor layer and a second semiconductor layer, wherein in at least a portion of the multilayer semiconductor structure, the first semiconductor layer and the second semiconductor layer have different conduction types. The first semiconductor layer and the second semiconductor layer have different refractive indexes, and the multilayer semiconductor structure functions as a multilayer reflective mirror. As a result, an electronic device, a surface emitting laser, a surface emitting laser array, a light source, and an optical module with decreased parasitic capacitance can be realized.

Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

Abstract: A semiconductor light-emitting element includes: a substrate; a semiconductor stacked film including a first cladding layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first cladding layer, and a second cladding layer of a second conductivity type formed on the light-emitting layer, and having an optical waveguide; a first electrode formed so as to be electrically connected to the first cladding layer; and a second electrode formed so as to be electrically connected to the second cladding layer. The light-emitting layer generates guided light that is guided in the optical waveguide, and non-guided light that is not guided in the optical waveguide, and the non-guided light is emitted from one of the substrate side and the semiconductor stacked layer side to the outside.