Abstract: In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.

Abstract: A surface emitting laser emitting a laser beam in a single transverse mode irrespective of an emission area while one-dimensionally aligning polarization of the output beam, including a two-dimensional photonic crystal, having resonance modes in directions of the primitive translation vector a1 and a2, lengths |a1| and |a2| of the primitive translation vectors a1 and a2 satisfied |a1|=p×(?1/2neff1), |a2|=?2/2neff2 described by a resonance wavelengths ?1 and ?2 in the resonance modes in the a1 and a2 directions, effective refractive indexes neff1 and neff2 determined by the resonance modes in the a1 and a2 directions, an integer p of 2 or more, the resonance wavelengths ?1 and ?2 satisfy ?2?2×(neff2/(nout+neff2))×?1 described by the effective refractive index neff2 and a refractive index nout of an external medium located out of the surface emitting laser.

Abstract: Optical apparatus includes a beam source, which is configured to generate an optical beam having a pattern imposed thereon. A projection lens is configured to receive and project the optical beam so as to cast the pattern onto a first area in space having a first angular extent. A field multiplier is interposed between the projection lens and the first area and is configured to expand the projected optical beam so as to cast the pattern onto a second area in space having a second angular extent that is at least 50% greater than the first angular extent.

Abstract: A laser device includes a substrate, a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a second order diffraction grating in a layer above the active layer and having dimensions of at least 100 ?m by 100 ?m. The second order diffraction grating diffracts and directs light generated in the active layer in a direction generally perpendicular to the longitudinal direction of the upper cladding layer. A laser device further includes a first reflective film on a first end face of a resonator, and a second reflective film on a second end face of the resonator, the second end face being located at the opposite end of the resonator to the first end face.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: A vertical-cavity surface-emitting laser array includes a substrate having an element forming area, multiple columnar structures formed in the element forming area on the substrate, and at least one metal wire formed adjacent to the multiple columnar structures. Each columnar structure includes a lower semiconductor reflector of a first conductivity type, an upper semiconductor reflector of a second conductivity type, and an active region formed between the lower semiconductor reflector and the upper semiconductor reflector. The columnar structure emits light in a direction perpendicular to the substrate. The at least one metal wire has a distortion applying segment that extends in the same direction relative to the multiple columnar structures.

Abstract: A vertical cavity surface emitting laser element as described herein can suppress of any dislocation, when a distributed Bragg reflector (DBR) mirror is formed on the onto a substrate (1). The vertical cavity surface emitting laser can be designed so that an average of strain in the DBR mirror (2) and a layer thickness of the DBR mirror (2) are in reference to a curvature of the substrate (1) in order to satisfy a predetermined condition, and then nitrogen can be added into the DBR mirror (2) with a composition that corresponds to a designed average of strain in the DBR mirror (2). For example, the average composition of nitrogen can be designed to be between 0.028% and 0.390%.

Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

Abstract: A parallel optical transceiver module is provided that has a heat dissipation system that dissipates large amounts of heat, while also protecting the laser diodes, ICs and other components of the module from particulates, such as dust, for example, and from mechanical handling forces. The heat dissipation system is configured to be secured to the optical subassembly (OSA) of the module such that when the OSA is secured to the upper surface of the leadframe of the module, the OSA and the heat dissipation system cooperate to encapsulate at least the laser diodes and laser diode driver IC in a way that protects these components from dust and other particulates and from external mechanical forces. The heat dissipation system of the module is disposed for coupling with an external heat dissipation system, e.g., with a heat dissipation system that is provided by the customer.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.

Abstract: A vertical cavity surface emitting laser includes, a lower DBR layer; an upper DBR layer; an active layer existing between the lower DBR layer and the upper DBR layer; and a laser emitting region provided on a surface layer of the upper DBR layer, in which the upper DBR layer includes a doped first semiconductor multilayer film layer and an undoped second semiconductor multilayer film layer; an electrode provided on the upper DBR layer is formed in a region which is on an upper part of the first semiconductor multilayer film layer and is surrounded by the second semiconductor multilayer film layer; the laser emitting region is formed on a surface layer of the second semiconductor multilayer film layer; and the surface layer of the first semiconductor multilayer film layer is formed by a contact layer and the second semiconductor multilayer film layer is stacked on the contact layer.

Abstract: A surface-emitting laser includes a surface relief structure provided on an upper multilayer reflector, the surface relief structure including a region of a first laminate, a region of a second laminate that has a larger optical thickness than the first laminate, and a region of a third laminate that has a larger optical thickness than the first laminate and the second laminate.

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength ?, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: A surface emitting semiconductor laser includes a first semiconductor layer sequence, which comprises a pump laser. A second semiconductor layer sequence is arranged on the first semiconductor layer sequence and comprises a vertical emitter. The vertical emitter has a radiation-emitting active layer, a radiation exit side and a connecting side lying opposite the radiation exit side. The pump laser is arranged at the radiation exit side of the vertical emitter and a carrier body is arranged at the connecting side of the vertical emitter. Furthermore, a method for producing a surface emitting semiconductor laser is specified.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.

Abstract: A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as ?max°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+?max)° or be smaller than (90??max)°.

Abstract: A two-dimensional photonic crystal laser light is provided. The two-dimensional photonic crystal laser includes a two-dimensional photonic crystal made of a plate-shaped member provided with a periodic arrangement of identically-shaped modified refractive index areas having a refractive index different from that of the plate-shaped member; and an active layer provided on one side of the two-dimensional photonic crystal. The modified refractive index areas are arranged at lattice points of a lattice with a same period at least in two directions; each modified refractive index area is shaped so that a feedback strength is different with respect to directions of two primitive lattice vectors of the lattice; the two-dimensional photonic crystal has a periodic structure of a supercell, which contains a plurality of lattice points; and the sum of the feedback strengths by all modified refractive index areas in the supercell is identical in each direction of the two primitive lattice vectors.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. A plurality of OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the OE elements positioned in optical alignment with the optical via for receiving the light. A carrier is interposed between electrical interconnect elements. The carrier is positioned between the wiring of the silicon layer and a circuit board and the carrier is electrically connecting first interconnect elements connected to the wiring of the silicon layer and second interconnect elements connected to the circuit board.

Abstract: A device contains at least one wavelength-tunable multilayer interference reflector controlled by an applied voltage and at least one cavity. The stopband edge wavelength of the wavelength-tunable multilayer interference reflector is preferably electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode (or a composite cavity mode), resulting in a modulated transmittance of the multilayer interference reflector. A light-emitting medium is preferably introduced in the cavity or in one of the cavities permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply forward or reverse bias and may operate as a vertical cavity surface-emitting light emitter or modulator or as an edge-emitting light emitter or modulator.

Abstract: A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

Abstract: A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

Abstract: A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.

Abstract: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength.

Abstract: A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.

Abstract: A surface emitting semiconductor component with an emission direction that has a semiconductor body. The semiconductor body has a plurality of active regions for the generation of radiation and are spaced apart from one another, wherein between two active regions a tunnel junction is monolithically integrated in the semiconductor body. The two active regions are electrically conductively connected by means of the tunnel junction, and the semiconductor component is provided for operation with an external resonator. A laser device comprising a semiconductor component of this type and an external resonator is also disclosed.

Abstract: Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.

Abstract: A photonic crystal that can spatially control the resonance efficiency and reduce the leakage of light in transversal directions and a surface emitting laser that can be formed by using such a photonic crystal are provided. The photonic crystal has a first region and a second region having a same periodic structure as fundamental structures thereof and defects are introduced into the periodic structure of the first region, which is arranged around the second region.

Abstract: Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not ?/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of ?/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength ? includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than ?/4. The second layer has an optical thickness larger than ?/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.

Abstract: The present invention provides a surface emitting laser having a novel structure which eliminates necessity to provide a low refractive index medium at an interface of a photonic crystal layer on the side of a substrate. A multilayer mirror (1300), an active layer (1200), and a refractive index periodic structure layer (1020) whose refractive index changes periodically are laminated in a direction perpendicular to a substrate (1500). The refractive index periodic structure layer is structured so as to separate a light having a wavelength ? perpendicularly incident on the refractive index periodic structure into at least a transmitted light and a diffracted light. The multilayer mirror is structured so as to have a reflectance with regard to the diffracted light higher than a reflectance with regard to the transmitted light. A resonant mode is realized within a waveguide including the refractive index periodic structure layer and the multilayer mirror.

Abstract: Surface emitting laser arrays with intra-cavity harmonic generation are coupled to an optical system that extracts harmonic light in both directions from an intra-cavity nonlinear optical material in such a way that the focusing properties of the light beams are matched.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post structure formed on the substrate, the post structure comprising a light emitter, the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.

Abstract: A vertical cavity surface emitting laser (VCSEL) system and method of fabrication are included. The VCSEL system includes a gain region to amplify an optical signal in response to a data signal and a first mirror arranged as a partially-reflective high-contrast grating (HCG) mirror at an optical output of the VCSEL system. The VCSEL system also includes a second mirror. The first and second mirrors can be arranged as a laser cavity to resonate the optical signal. The VCSEL system further includes a doped semiconductor region to generate a current through the first mirror in response to a voltage signal to substantially alter the reflectivity of the first mirror to provide Q-switching capability of the VCSEL system.

Abstract: To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.

Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of ?/8 to 3?/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

Abstract: A parallel transceiver includes a constructed array of dice. The constructed array comprises an integer number of dies that each have an integer number of optoelectronic devices arranged on the die. Each die forming the constructed array is attached to a respective tab of a shim that is fixed to a first lead frame. Each tab includes a bridge region and a mounting region. Each die is attached to a respective mounting region of a corresponding tab. When necessary, a laser hammering technique is performed whereby laser generated energy is applied along an axis in the bridge region of the shim to adjust the position of the optoelectronic devices on the die attached to the tab in one or more directions relative to the axis.

Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

Abstract: Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source.

Abstract: The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength ?x is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ?R(=Rx?Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: An extended cavity surface emitting laser has a first laser die with a first cavity and a first gain element and a second laser die with a second cavity and a second gain element. The first and second gain elements are in series to provide optical gain and optical feedback in an extended optical cavity configuration. The first and second gain elements provide optical gain and optical feedback in a common extended cavity with the first and second gain elements operating serially as a common extended cavity optical mode.

Abstract: An optical device is disclosed, including a surface emitting laser element having a surface emitting laser which emits a light in a direction which is perpendicular to a substrate face; a light receiving element which monitors the light of the surface emitting laser; a package provided with a region on which the surface emitting laser element and the light receiving element are provided; and a lid which has a window through which passes the light of the surface emitting laser, the window being formed with a transparent member, and which covers the surface emitting laser element and the light receiving element.

Abstract: A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.

Abstract: A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Abstract: A method of manufacturing a surface emitting laser element of a vertical cavity type comprises sequential accumulation that accumulates a reflecting mirror of a multilayered film layer at a lower side of the substrate, and accumulates semiconductor layers onto the reflecting minor at the lower side that comprises an active layer and a contact layer. The process includes forming a first layer of dielectric substance on the contact layer, forming an electrode of an annular shape on the contact layer that has an open part to be arranged for the first layer at an inner side of the open part, and forming a second layer of dielectric substance to cover the first layer and a gap formed between the first layer and the electrode of the annular shape. The accumulated semiconductor layers are etched to form a mesa post, using the electrode of the annular shape as a mask.

Abstract: The present invention relates to a laser device comprising at least one large area VCSEL (101) and at least one optical feedback element (201, 301) providing an angular-selective feedback for laser radiation emitted from the laser. The angular-selective feedback is higher for at least one portion of laser radiation emitted at angles ?>0 to the optical axis (601) of the laser than for laser radiation emitted on said optical axis (601). The invention also refers to a method of stabilizing a laser emission of a large area VCSEL in a desired angular distribution (501, 502). With the proposed device and method, the intensity distribution of a large area VCSEL can be stabilized in a desired shape, for example a ring shape.