Abstract: A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.

Abstract: A temperature sensing circuit a switched capacitor circuit selectively samples ?Vbe and Vbe voltages and provides the sampled voltages to inputs of an integrator. A quantization circuit quantizes outputs of the integrator to produce a bitstream. When a most recent bit of the bitstream is a logic zero, operation includes sampling and integration of ?Vbe a first given number of times to produce a voltage proportional to absolute temperature. When the most recent bit of the bitstream is a logic one, operation includes cause sampling and integration of Vbe a second given number of times to produce a voltage complementary to absolute temperature. A low pass filter and decimator filters and decimates the bitstream produced by the quantization circuit to produce a signal indicative of a temperature of a chip into which the temperature sensing circuit is placed.

Abstract: Methods and apparatus for extracting temperature information for an array from a signal through first and second contacts based on temperature dependent properties of the a PN junction. An example method includes connecting first and second PN junctions to a bias source to reverse bias the first and second PN junctions, connecting a first contact to the first PN junction, connecting a second contact to N type material forming a junction with P type material of the first PN junction, and extracting temperature information for the first PN junction from a signal through the first and second contacts based on temperature dependent properties of the first PN junction.

Abstract: Aspects of the disclosure include methods, systems, and apparatus, including computer-readable storage media for multi-mode integrated circuits with balanced energy consumption. A method includes determining, by one or more processors and based at least on a maximum energy threshold for planned multi-mode system having one or more processing units, a respective number of operations that can be performed per clock cycle by the processing units for each operating mode. The system is configured to consume the same amount of energy per clock cycle in each operating mode, but perform more operations in operating modes corresponding to operations performed on smaller bit-width operands.

Abstract: The invention relates to a method for determining the temperature of a power electronics unit (1) which has at least one commutator circuit (2) and a load (3) which is powered/can be powered by the commutator circuit (2). The commutator circuit (2) comprises a first semiconductor switch device (4), which has a first semiconductor switch (5) and optionally a first diode (6), and a second diode (9), wherein the second diode (9) and the load (3) are connected in parallel to the first semiconductor switch (5). The curve of an electric current flowing through the second diode (9) is monitored at least when a reverse current is produced in the second diode (9) after the semiconductor switch (5) has been switched so as to become conductive. On the basis of the current curve, the temperature of a barrier layer of the second diode (9) is determined.

Abstract: Methods, systems and devices of the present disclosure involve techniques for cancelling base resistance error otherwise present in remote temperature sensors such as remote diode temperature sensors. In one or more embodiments, measurement logic configured to determine a temperature of or near a remote temperature sensor may be configured to determine an error cancelling coefficient and to calculate a temperature value, at least in part, responsive to the error cancelling coefficient. In some cases, error cancelling coefficients may be determined using one or more calibration techniques.

Abstract: A temperature sensing system with simplified wiring comprises an in-core temperature sensing component and an out-of-core temperature-evaluation device. The out-of-core temperature-evaluation device provides a plurality of currents to the in-core temperature sensing module in a time-sharing manner. Corresponding to the plurality of currents, the in-core temperature sensing component generates a plurality of potentials to the out-of-core temperature-evaluation device. The out-of-core temperature-evaluation device evaluates a temperature data by performing a difference calculation on the plurality of potentials.

Abstract: A system is disclosed, including an interface to a DUT and a testing apparatus. The DUT includes a first plurality of temperature sensing circuits. The testing apparatus may store a plurality of control values. Each control value may depend on at least two calibration values of corresponding temperature sensing circuits of a second plurality of temperature sensing circuits. The testing apparatus may generate a plurality of calibration values for the DUT. Each calibration value corresponds to one of the first plurality of temperature sensing circuits. The testing apparatus may determine a plurality of test values for the DUT. The testing apparatus may calculate a probability value, and repeat generation of the plurality of calibration values upon determining that the probability value is less than a predetermined threshold value. The probability value corresponds to a likelihood that the plurality of calibration values is accurate.

Abstract: A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

Abstract: A temperature detection device includes a temperature detection diode, a comparator, and a forward current correction circuit. The comparator compares a forward voltage of the temperature detection diode with a threshold voltage and outputs a level signal corresponding to a temperature state. The forward current correction circuit includes a current mirror circuit including a first transistor and a second transistor, a third transistor, an operational amplifier and a variable resistor, and corrects a forward current of the temperature detection diode to change the forward voltage.

Abstract: The invention provides a temperature sensing device of an integrated circuit. The integrated circuit includes a plurality of stacked metal wire layers, and the temperature sensing device includes a first metal sheet, a first via and a second via. The first metal sheet is disposed between the first metal wire layer and the second metal wire layer of the metal wire layers. The first via and the second via are used to connect the first metal sheet and the first metal wire layer, wherein a temperature sensing signal enters the first metal sheet through the first via and leaves the first metal sheet through the second via to measure the temperature of the integrated circuit.

Abstract: A temperature sensor having a two-state input current, an element whose temperature is sensed based on a change in voltage across the element induced by the two states of the input current, a charge-to-digital converter, and a capacitor continuously connected between the element and the charge-to-digital converter. The capacitor experiences a charge difference due to the change in voltage across the element induced by the two states of the input current, and the charge-to-digital converter converts the charge difference to a digital value indicative of the temperature of the element. A two-state DC-shifting current having opposite polarity of the two-state input current, a pull-down resistor whose voltage varies with the two-states of the DC-shifting current, and a second capacitor continuously connected between the pull-down resistor and the charge-to-digital converter operate to shift down a DC operating point of the charge-to-voltage converter to increase its dynamic range.

Abstract: An integrated thermal sensor comprising photonic crystal elements that enable photonic elements for photonic sourcing, spectral switching and filtering, sensing of an exposed analyte and detection. In embodiments, applications are disclosed wherein these photonic elements provide a spectrophotometer, a photonic channel switch and a standalone sensor for toxic gases and vapors. An application coupled with a mobile phone is disclosed.

Abstract: A current sensor chip includes a first magnetic field sensor element and a second magnetic field sensor element respectfully configured to generate a first analog sensor signal and a second analog sensor signal responsive to a magnetic field caused by a primary current passing through an external primary conductor; an analog-to-digital converter coupled to the second magnetic field sensor element and configured to generate a digital sensor signal based on the second analog sensor signal; a digital signal processor coupled to the analog-to-digital converter to receive the digital sensor signal and configured to determine, based on the digital sensor signal and calibration parameters stored in a memory, a corresponding current measurement signal, which represents the primary current; and an external output pin coupled to the first magnetic field sensor element to receive the first analog sensor signal or an analog signal derived therefrom by analog signal processing.

Abstract: Methods, systems and devices of the present disclosure involve techniques for cancelling base resistance error otherwise present in remote temperature sensors such as remote diode temperature sensors. In one or more embodiments, measurement logic configured to determine a temperature of or near a remote temperature sensor may be configured to determine an error cancelling coefficient and to calculate a temperature value, at least in part, responsive to the error cancelling coefficient. In some cases, error cancelling coefficients may be determined using one or more calibration techniques.

Abstract: A temperature-aware task scheduling method, system, and computer program product, includes obtaining a temperature of the GPU and accepting and executing the task to the GPU, in response to the obtaining a temperature of the GPU.

Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

Abstract: An apparatus measures a junction temperature in an IC through a pin of the IC and concurrently provides a digital input signal to digital logic of the IC through the pin. The IC has an ESD diode structure connected to the pin. High and low side voltage sensors sense a voltage drop across the diode structure. An input multiplexer controlled by the digital input signal selectively connects high and low side current sources to the pin to concurrently provide the digital input signal to the digital logic and to drive a constant current through the diode structure. An output multiplexer controlled by the digital input signal selectively connects the high and low side voltage sensors to an output that provides a sense signal indicative of the IC junction temperature.

Abstract: Techniques for determining a temperature measurement of a junction of a power switch are described. A current can be applied to a control node, e.g., gate terminal, of the power switch, such as a field-effect transistor (FET) or an insulated-gate bipolar transistor (IGBT), while the power switch is in a steady-state region in which a gate-to-source voltage (e.g., FET) or a gate-to-emitter voltage (e.g., IGBT) of the power switch is constant. While in the steady-state region, the temperature measurements can be performed, thereby ensuring accuracy of the measurement.

Abstract: Methods of controlling semiconductor device and semiconductor device are provided in which a semiconductor device can define a normally operational ambient temperature at a low level. The Microcontroller includes a logical block, a temperature sensor for measuring junction temperature, a power consumption circuit for consuming predetermined power, and a Controller for controlling the consumption of power by the power consumption circuit such that the temperature measured at the temperature sensor is not less than a predetermined operational lower limit temperature of the logical block 110.

Abstract: A device for measuring voltage and temperature in a power supply is disclosed. The device includes a pin to be coupled to a temperature measuring circuit and power inputs of the power supply. The device is configured to measure a voltage at the power inputs and when the voltage changes are within a predetermined threshold for a predetermined time period, the device is configured to measure the temperature.

Abstract: A method of making a temperature sensor arrangement includes forming a sensor array. The sensor array includes a first transistor of a first device and a plurality of second transistors of a second device different from the first device. The method further includes forming a guard ring region between the sensor array and another circuit of an integrated circuit. The guard ring region includes a transistor structure. The method further includes forming a thermally conductive element between the sensor array and the guard ring region. The thermally conductive element is connected to the transistor structure, the first transistor and each of the plurality of second transistors.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same, and relates to the field of semiconductor devices. The semiconductor device includes an active region, a test region and a passive region located outside the active region and the test region, wherein a standard device is formed in the active region, and a test device for testing performance parameters of the standard device is formed in the test region.

Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

Abstract: A temperature sensing apparatus and a temperature sensing method thereof are provided. A current source circuit provides a test current to a temperature sensing load, and the temperature sensing load generates a test voltage in response to the test current. A processing circuit determines a type of the temperature sensing load according to the test voltage, and determines a temperature according to the type of the temperature sensing load and a temperature sensing voltage generated by the temperature sensing load.

Abstract: An electronic device can include a temperature sensor. The temperature sensor can include a drain electrode including drain fingers spaced apart from the source fingers; a source electrode including source fingers spaced apart from the drain fingers; and a gate electrode including a runner, gate fingers and a conductive bridge. In an embodiment, the runner includes a first portion and a second portion spaced apart from the first portion, the gate fingers are coupled to the runner and each gate finger is disposed between a pair of the source and drain fingers. The conductive bridge connects at least two gate fingers, wherein the conductive bridge is along a conduction path between the first and second portions of the runner. Designs for the temperature sensor may provide a more accurate temperature measurement reflective of a transistor within the electronic device.

Abstract: In some examples, a sigma-delta analog-to-digital converter (ADC), comprises a first set of switches configured to receive a first voltage signal; a second set of switches coupled to the first set of switches at a first node and a second node, the second set of switches configured to receive a second voltage signal; an integrator including a first input sampling capacitor coupled to the first node and a second input sampling capacitor coupled to the second node, wherein the integrator configured to generate a first output signal. The sigma-delta ADC further comprises a comparator coupled to the integrator and configured to generate a second output signal based on the first output signal; and a controller unit having a first counter, a second counter, and a processor, the controller unit coupled to the first and second sets of switches, the integrator, and the comparator.

Abstract: Unique systems, methods, techniques and apparatuses of semiconductor failure prognostication. One exemplary embodiment is a power converter comprising a semiconductor switch and a converter control system. The converter control system is configured to turn on the semiconductor switch, measure a first voltage and a current during reverse conduction, estimate junction temperature of the semiconductor device, turn off the semiconductor device, measure a second voltage after turning off the semiconductor device, determine a resistance value using the second voltage measurement, determine an expected resistance value, predict a failure of the semiconductor device using the resistance value and the expected resistance value, and transmit a semiconductor device failure warning.

Abstract: An integrated electronic device including an electronic component and a temperature transducer formed in a first die. The temperature transducer including a first diode and a second diode which are connected in antiparallel.

Abstract: In a general aspect, a circuit can include a first resistor configured to be coupled to a first terminal of a temperature-sensitive resistance, a second resistor configured to be coupled to a second terminal of the temperature-sensitive resistance and a temperature information circuit. The temperature information circuit can be configured to: receive a first voltage from the first terminal of the temperature-sensitive resistance; receive a second voltage from the second terminal of the temperature-sensitive resistance; and provide temperature information based on the first voltage and the second voltage. The temperature information circuit can include a first comparison circuit configured to determine a difference between the first voltage and the second voltage, and a second comparison circuit configured to compare an output of the first comparison circuit to a reference.

Abstract: Described is a current-mode thermal sensor with calibration apparatus which comprises: a first transistor with a gate terminal coupled to a first node; a second transistor with a gate terminal coupled to a second node; a first resistor coupled to the first and second nodes; a second resistor coupled to the first node and a supply node; a diode coupled to the second node and the supply node; a third resistor coupled to the second node; and a switch coupled to the third resistor and a reference supply.

Abstract: A method for driving a light source includes the following steps: a. providing a code to be transmitted by the light source; b. converting the code into a sequence of different current levels, which current levels are maintained for a predetermined period of time; and c. providing the sequence of different current levels to the light source such that the light source emits light at different intensity levels, where driving the light source is carried out using a set-point update rate having a set-point update period, and where transitions between the different current levels take more than one set-point update period.

Abstract: A vehicle powertrain includes an IGBT and a gate driver. The IGBT is configured to energize an electric machine. The gate driver is configured to apply an off voltage less than a threshold voltage onto a gate of the IGBT while the IGBT is operating in a saturation mode, and in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage to reduce flyback from the electric machine. The gate driver may be configured to, in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage and below the threshold to reduce flyback from the electric machine.

Abstract: A temperature measuring device of a power semiconductor apparatus that accurately detects chip temperature even where a gradient of the measured characteristic line segment is different from a designed gradient, including a chip temperature detecting circuit that includes an A/D converter delivering a measurement value of a digital converted forward voltage across a temperature detecting diode and an operational processing unit for calibration and chip temperature calculation. In calibration processing, different known reference voltages are applied by a reference connected in place of the diode and a gradient of the line segment connecting the measurement values is calculated. The gradient is stored in a memory with an offset correction value that is one of the measurement values. A chip temperature is calculated based on a forward voltage across the diode calculated based on the measurement value and the stored values of the gradient and the offset correction value.

Abstract: In one embodiment, a circuit includes at least one transistor with a base and collector being electrically connected to a ground, and at least one current source being configured to apply four different currents (A, B, C, and D) to the emitter. A sum of the currents A and C are substantially equivalent to a sum of the currents B and D, or a sum of the currents A and D are substantially equivalent to a sum of the currents B and C. The circuit outputs first, second, third, and fourth voltage potentials between the emitter and the base during application of the currents A, B, C, and D, respectively.

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract: Various embodiments are described herein that generally relate to catheter probes for diagnostic and/or therapeutic purposes. The catheter probes described herein generally comprise a proximal hub comprising a hub housing and at least one wire, a catheter body connected to the proximal hub, the catheter body comprising a channel member and an insulator, the channel member being adapted to provide a housing for a portion of the catheter body and a conductive pathway, and the insulator being adapted to cover at least a portion of the channel member; and a catheter distal end comprising at least one electrode connected to the at least one wire.

Abstract: A system and method for measuring integrated circuit (IC) temperature. An integrated circuit (IC) includes a thermal sensor and data processing circuitry. The thermal sensor utilizes switched currents provided to a reference diode and a thermal diode. The ratios of the currents provided to each of these diodes may be chosen to provide a given delta value between the resulting sampled diode voltages. At a later time, a different ratio of currents may be provided to each of these diodes to provide a second given delta value between the resulting sampled diode voltages. A differential amplifier within the data processing circuitry may receive the analog sampled voltages and determine the delta values. Other components within the data processing circuitry may at least digitize and store one or both of the delta values. A difference between the digitized delta values may calculated and used to determine an IC temperature digitized code.

Abstract: The present invention relates to non-replicating probiotic micro-organisms and their health benefits. In particular, the present invention provides a means to help parents to protect their children from gastro-intestinal infections, in particular diarrhea. One embodiment of the present invention relates to a composition comprising non-replicating probiotic micro-organisms for use in the prevention or treatment of gastrointestinal infections in children.

Abstract: A trimmed thermal sensing system can include a temperature sensitive circuit configured to provide an output that varies as a function of temperature and in response to a trimmed bandgap reference signal. A trim network is coupled to the temperature sensitive circuit. The trim network trims the temperature sensitive circuit in an opposite direction of trimming implemented to provide the trimmed bandgap reference signal, such that temperature tolerance of the temperature sensitive circuit is reduced.

Abstract: A local area networking apparatus comprises a power stage for connecting to a network cable for carrying power and data. The power stage comprises a main current flow path which includes a switch comprising at least one transistor positioned in the main current flow path and a current monitoring apparatus for monitoring current flow in the main current flow path, and wherein the current monitoring apparatus comprises a sensor which is not placed in series with the main current flow path. The current monitoring apparatus can comprise a current mirroring stage which is arranged to mirror current flowing in the main current flow path to a monitoring current flow path. The switch can be implemented as a set of switches.

Abstract: A thermal sensor system including at least one thermal sensor, a voltage control network, a current gain network, a current compare sensor, and a controller. The voltage control network applies reference and delta voltage levels to a thermal sensor, which develops reference and delta current signals. The current gain network is used to adjust current gain. The current compare sensor is responsive to the reference and delta current signals and provides a comparison metric. The controller selects a temperature subrange and controls the current gain network to adjust the gain of the delta current signal to determine a gain differential value indicative of the temperature. The controller may select from among different sized thermal sensors, current mode gain values, and control voltages corresponding with each of multiple temperature subranges. Any one or more of these parameters may be adjusted to adjust an operating point for selecting a corresponding temperature subrange.

Abstract: The present disclosure discloses an apparatus for thermally protecting an LED device. The apparatus includes a substrate. A light-emitting device disposed on a first region of the substrate. The apparatus includes a thermistor disposed on a second region of the substrate. The second region is substantially spaced apart from the first region. The thermistor is thermally and electrically coupled to the light-emitting device. The present disclosure also discloses a method of thermally protecting an LED device. The method includes providing a substrate having a light-emitting diode (LED) die disposed thereon. The method includes detecting a temperature of the LED die using a negative temperature coefficient (NTC) thermistor. The NTC thermistor is positioned on a region of the substrate substantially away from the LED die. The method includes adjusting an electrical current of the LED die in response to the detecting.

Abstract: A method includes alternately coupling a selected one of a plurality of current sources and two or more of the plurality of current sources to a first terminal of a bipolar device during first and second phases of a modulator cycle of a plurality of modulator cycles. The method further includes providing sampled voltages from the first terminal of the bipolar device to a modulator to produce a modulator output signal, filtering the modulator output signal to produce a filtered output signal using a back-end filter having an impulse response, and determining a temperature in response to the filtered output signal.

Abstract: A temperature detecting device for a power conversion device is provided in which the number of components can be reduced. An exemplary embodiment of the temperature detecting device includes: a plurality of temperature detecting elements that are provided in correspondence with a plurality of temperature detection objects, each temperature detecting element outputting a signal having a correlation with the temperature of the temperature detection object by being supplied power by a common power source; and a temperature detector that detects the temperatures of the temperature detection objects based on the signals having correlation with the temperatures of the temperature detection objects outputted from the temperature detecting elements. The temperature detector detects an average temperature of at least two temperature detection objects among the plurality of temperature detection objects or respective temperatures of the plurality of temperature detection objects based on the output signals.

Abstract: The present invention relates to a micro-hotplate device comprising a frame, a membrane, an active area comprising at least one active layer, and a heating structure designed to heat said active layer, said heating structure having concentric tracks and comprising inner tracks (20) and inner spaces (22) and outer tracks (24) and outer spaces (26) as being the one or two tracks and spaces located the furthest away from the center of the heating structure, characterized in that said outer tracks (24) are designed to be located closer to their neighboring tracks and/or are designed to have a width which is lower than those of the inner tracks (20), the width and the spacing of said inner tracks (20) being substantially constant.

Abstract: A temperature measuring apparatus is provided which includes a sensor assembly made up of sensing devices which are connected together to produce an output signal correlated with the temperature of a target object. The temperature measuring apparatus determines the number of the sensing devices of the sensor assembly and corrects the output signal so as to compensate for an error in determining the temperature of the target object which depends upon the number of the sensing devices.

Abstract: A band gap reference circuit is provided that includes a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (Ra), a fifth resistor (Rb), a capacitor (Ca), an operational amplifier A, a first field effect transistor (FET) (P1), a second FET (P2), a third FET (P3), a fourth FET (Pa), a first bipolar junction transistor (BJT) (Q1), a second BJT (Q2), and a third BJT (Q3). P3 and Rb are used to control Pa, which is configured to control current flow to a reference node, and thus a reference voltage (Vref) output by the band gap reference circuit. The band gap reference circuit is configured to output a substantially constant reference voltage and is less sensitive or susceptible to noise from a power supply. Additionally, the band gap reference circuit prevents Vref from overshooting when the band gap circuit is enabled.

Abstract: Impedance calibration circuits are provided. The impedance calibration circuit includes an operation control signal generator and an impedance calibrator. The operation control signal generator receives temperature code signals to generate an operation control signal enabled when an internal temperature is changed from a first temperature to a second temperature. The impedance calibrator receives an external command signal or the operation control signal to generate pull-up code signals for pulling up an output signal and pull-down code signals for pulling down the output signal according to an external resistor.

Abstract: A lasing wavelength of a laser diode is determined by applying a forward current to the p-n junction of the laser diode and measuring a voltage across the p-n junction. The lasing wavelength can be determined by performing a simple wavelength calibration of the laser diode. This allows one to stabilize the lasing wavelength, and also to use the laser diode as a reference wavelength source.