Abstract: A method of estimating the output light flux of a light emitting diode, comprises applying a drive current waveform to the LED over a period of time comprising a testing period. The forward voltage across the LED is monitored during the testing period, and the output light flux is estimated as a function of changes in the forward voltage.

Abstract: Provided is a temperature detection system which is low in cost. The temperature detection system includes a plurality of temperature detection ICs (10) for detecting an abnormal temperature and a resistor (20). Each of the plurality of temperature detection ICs (10) includes a reference voltage terminal connected to an output terminal of one of the plurality of temperature detection ICs (10) located at a preceding stage. The resistor (20) is provided between an output terminal of one of the plurality of temperature detection ICs (10) located at the final stage and a ground terminal.

Abstract: Some embodiments provide a system that tests a computing system. During operation, the system monitors a temperature of a component in the computing system while running a series of calibrated workloads on the component. Next, the system analyzes a fluctuation of the temperature resulting from the calibrated workloads to determine a thermal performance of the component. The system then uses the determined thermal performance to improve the reliability of the computing system.

Abstract: Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.

Abstract: An external DC power supply 2 feeds a power supply voltage to a drain electrode of a MOSFET 10 constituted by silicon carbide (SiC), and a variable bias voltage generated from thus fed power supply voltage is applied to a gate electrode 13, so as to raise the temperature of the MOSFET 10. To a voltage divided by resistors R3, R4 from the power supply voltage, a change in a voltage divided by resistors R1, R2 from the power supply voltage is amplified by a predetermined negative amplification factor in the MOSFET 20 and added at a drain electrode 21, so that the drain electrode 21 attains a fixed voltage, whereby the bias voltage is held constant.

Abstract: A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.

Abstract: A temperature detection circuit that can detect temperature with high accuracy regardless of manufacturing variations, and a method of adjusting the same. The circuit includes: first and second diodes having respective independent p-n junctions; a first current path including a first variable voltage dividing resistor series connected to the first diode; a second current path including a second variable voltage dividing resistor series connected to the second diode; a reference voltage generation part that feeds back a differential voltage to each of the first and second current paths and outputs as a reference voltage the differential voltage indicating a difference between a first divided voltage of the first variable voltage dividing resistor and a potential on the second current path; and a temperature detection signal generation part generating a temperature detection signal based on a second divided voltage of the second variable voltage dividing resistor.

Abstract: A system and method for measuring integrated circuit (IC) temperature. An integrated circuit (IC) includes a thermal sensor and data processing circuitry. The thermal sensor utilizes switched currents provided to a reference diode and a thermal diode. The ratios of the currents provided to each of these diodes may be chosen to provide a given delta value between the resulting sampled diode voltages. At a later time, a different ratio of currents may be provided to each of these diodes to provide a second given delta value between the resulting sampled diode voltages. A differential amplifier within the data processing circuitry may receive the analog sampled voltages and determine the delta values. Other components within the data processing circuitry may at least digitize and store one or both of the delta values. A difference between the digitized delta values may calculated and used to determine an IC temperature digitized code.

Abstract: An electronic system for an electric drive mobile machine includes at least one transistor that emits heat, a pressure detector that generates a pressure signal, a temperature detector providing a first temperature signal indicative of the detected first temperature and a second temperature of or substantially adjacent to the transistor, and a controller configured to determine a temperature protection set point based upon the first temperature signal and the pressure signal and execute a control strategy for thermally protecting the transistor when the first temperature signal indicates that the first temperature reaches the temperature protection set point.

Abstract: A method of producing a temperature measuring sensor including an insulating substrate having a top surface and a bottom surface, the top surface including a first area and a second area, and a first contact and a second contact being formed in the first area, the above contacts having a structured measuring film located therebetween: creating a conductive connection between the first contact on the top surface of the insulating substrate and the bottom surface of the insulating substrate, and a first conductive layer as a first terminal area of the temperature measuring sensor on the bottom surface such that the first conductive layer is electrically connected to the conductive connection, as well as a second conductive layer on the second area of the top surface as a second terminal area of the temperature measuring sensor such that the second conductive layer is in contact with the second contact.

Abstract: A method for evaluating temperature is disclosed. The method includes setting a configuration of a configurable delay line out of multiple possible configurations, and delaying a first input signal by a temperature sensitive delay line, delaying a second input signal by the configurable delay line. The configurable delay line is less sensitive to temperature than the temperature sensitive delay line. The method also includes detecting, by a phase detector, a delay difference between a delay introduced by the temperature sensitive delay line and a delay introduced by the configurable delay line, repeating the setting, delaying of the first input signal, delaying of the second input signal and detecting, until the delay difference is below a threshold, and evaluating the temperature of the temperature sensitive delay line in response to a configuration of the configurable delay line that results in the delay difference that is below the threshold.

Abstract: A compact resistive thermal sensor is provided for an integrated circuit (IC), wherein different sensor components are placed on different layers of the IC. This allows the lateral area needed for the sensor resistance wire on any particular IC layer to be selectively reduced. In a useful embodiment, first linear conductive members are positioned in a first IC layer, in parallel relationship with one another. Second linear conductive members are positioned in a second IC layer in parallel relationship with one another. Conductive elements connect the first linear members into a first conductive path, and the second linear members into a second conductive path. A third conductive element extending between the first and second layers connects the first and second conductive paths into a single conductive path, wherein the path resistance varies with temperature. The path resistance is used to determine temperature.

Abstract: An apparatus and method are disclosed for temperature measurement that includes performing a first ?Vbe measurement of a first temperature of a diode circuit comprising a transistor and, subsequently, performing a first Vbe measurement of a second temperature of the diode circuit. A temperature difference is calculated between the second temperature and the first temperature. If the temperature difference is not greater than a predetermined amount, a second Vbe measurement of a third temperature of the diode circuit is subsequently performed. If the temperature difference is greater than the predetermined amount, a second ?Vbe measurement of the second temperature of the diode circuit is performed.

Abstract: A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

Abstract: An array element for a temperature sensor array circuit. The array element includes a switch transistor; and a temperature sensor element having an impedance which varies as a function of temperature, the temperature sensor element being connected in parallel with a source and drain of the switch transistor.

Abstract: A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

Abstract: A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Abstract: Provided is a two-terminal semiconductor sensor device with which an external device having low circuit or element accuracy may be used. An output voltage (VOUT) of the two-terminal semiconductor sensor device based on temperature is not based on a constant current of a constant current source (70) of the external device and a current of an output transistor (60) of the two-terminal semiconductor sensor device, but on a resistance ratio of a voltage dividing circuit including a resistor (30) and a resistor (40), and a temperature voltage (Vbe) of the two-terminal semiconductor sensor device. Accordingly, accuracy of the constant current of the constant current source (70) of the external device that receives the output voltage (VOUT) does not need to be high. Therefore, the external device does not need to have a highly accurate circuit or element for receiving the output voltage (VOUT).

Abstract: Disclosed is a temperature sensor (200) comprising a p-n junction device (110), a current device (120, 130) adapted to provide a sequence of different currents to the p-n junction device, a measurement circuit adapted to measure the voltage characteristics of the p-n junction device as a function of said sequence, and a processor adapted to determine the minimum value of the voltage swing from said characteristics and to convert said minimum value to a temperature value. A method of measuring a temperature using such a device is also disclosed.

Abstract: A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator.

Abstract: A temperature detection circuit includes a sensor, an integrated circuit (IC) chip, and a resistor. The sensor is operable for sensing a temperature. The IC chip can compare a sense voltage indicative of the temperature with a threshold voltage indicative of a temperature threshold to determine a temperature condition. The IC chip has a substantially constant parameter. The resistor is externally coupled to the IC chip. The IC chip maintains a current ratio, including a ratio of a first current flowing through the sensor to a second current flowing through the resistor, equal to the substantially constant parameter.

Abstract: A physical quantity detecting apparatus includes a plurality of physical quantity conversion circuits, an output selection circuit and a signal conversion circuit. Each of the plurality of physical quantity conversion circuits converts a physical quantity to be detected into a voltage corresponding to the physical quantity and outputs the voltage. The output selection circuit is electrically connected to the plurality of physical quantity conversion circuits to select a maximum voltage from among the voltages outputted from the plurality of physical quantity conversion circuits. The signal conversion circuit is electrically connected to the output selection circuit to convert the voltage outputted from the output selection circuit into a pulse signal having a pulse width or frequency corresponding to the voltage and output the pulse signal.

Abstract: A temperature sensor includes a compare subject voltage output unit, a temperature range decision unit, and a temperature signal output unit. The compare subject voltage output unit is configured to output a reference voltage having a constant value irrespective of a change of an external temperature and a third temperature voltage that decreases in response to an increase of an external temperature. The temperature range decision unit is configured to compare the reference voltage and the third temperature voltage, and output an enable signal, to indicate whether the external temperature is different from a normal temperature. The temperature signal output unit is configured to output a specific one of a plurality of high temperature signals or a specific one of a plurality of low temperature signals, to indicate a range of the external temperature, in response to the enable signal.

Abstract: A novel detector apparatus and detection method for measuring temperature exploit the avalanche transition edge, and are useful for contact and remote sensing & imaging and microbolometry of thermal, THz, LWIR/MWIR/SWIR/NIR, and visible light. The invention allows uncooled operation at kHz frame rates.

Abstract: The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.

Abstract: Provided is a low power consuming, highly precise, wide-range temperature sensor. The temperature sensor includes a current mirror, a first MOS transistor, and a second MOS transistor. The current mirror generates a first reference current in response to a particular current applied by a power voltage and a second reference current in response to the first reference current so as to output the first and second reference currents. The first MOS transistor includes a drain terminal D1 receiving the first reference current and a gate terminal G1 receiving a bias voltage. The second MOS transistor includes a drain terminal D2 receiving the second reference current, and the second MOS transistor generates an output voltage.

Abstract: An apparatus including a temperature-sensing circuit. The temperature-sensing circuit can include an amplifier. The amplifier can include a positive input and a negative input. The negative input can be configured to be driven by a temperature-independent signal. A first transistor electrically can be connected to the positive input. The first transistor can be configured to be controlled by a temperature signal. A temperature threshold resistance and a hysteresis resistance can be electrically connected in series to the positive input. A second transistor can be electrically connected in parallel with the hysteresis resistance.

Abstract: A circuit (1-2) for compensating for variations in the current gain ? of a sensing transistor (Q1) having a collector coupled to a reference voltage (GND) includes a first current mirror (20) having an input coupled to a base of the sensing transistor. A second current mirror (21) has an input coupled to an output of the first current mirror. A current source (13) is coupled to provide emitter current for the sensing transistor. An output of the second current mirror circuit (21) feeds base current of the sensing transistor back to its emitter to cause the collector current of the sensing transistor to be precisely equal to the current (I1) provided by the current source.

Abstract: In an exemplary embodiment, a temperature sensor and a 4-20 mA transmitter on a single flexible circuit subassembly with a separate housing suitable for use in industrial control or HVAC applications. In a preferred embodiment, a narrow flex circuit substrate includes a silicon diode-based surface-mount sensor at a sensor end, a surface-mount programmable transmitter IC on a flex circuit substrate in the transmitter section, conductive traces connecting the sensor to the transmitter IC, and two conductive pads at an output end for connecting the 4-20 mA output to a pair of external wires. Additional traces on the flex subassembly are provided for testing and programming the transmitter IC and sensor. The sensor end of the flex subassembly is mounted in a metal sensor tube, filled and sealed in the same manner as RTD or thermistor sensors with leads are currently assembled for use in industrial control or HVAC applications.

Abstract: A semiconductor device including a temperature sensor includes a pull up circuit, a pull down circuit, a first additional current path, and a second additional current path. The pull up circuit is configured to generate a pull up current that contributes to generation of a first output current. The pull down circuit is operably coupled to the pull up circuit at an output node and configured to generate a pull down current that contributes to generation of a second output current. The first additional current path, when enabled, is configured to combine a first additional current with the pull up current to comprise the first output current. The second additional current path, when enabled, is configured to combine a second additional current with the pull down current to comprise the second output current. Respective enablement of the first additional current path and the second additional current path is complementary.

Abstract: A method and apparatus for determining a temperature of a semiconductor device is provided herein. One aspect of the disclosed subject matter is seen in a temperature sensing device. The temperature sensing device comprises a diode and a circuit. The diode is adapted to be reverse biased by a charging voltage applied thereto. The circuit determines a temperature of the diode based on a rate that the voltage on the diode discharges in response to the charging voltage being uncoupled from the diode.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for the dynamic power control of a memory device thermal sensor. In some embodiments a memory device includes an on-die thermal sensor and enable logic to dynamically enable or disable the on-die thermal sensor. In some embodiments, the on-die thermal sensor senses thermal data responsive to a thermal data sense indication. The thermal data sense indication may be received subsequent to the expiration of a delay period.

Abstract: Some embodiments include apparatus and methods having a first switch, a second switch, and a circuit coupled to the first and second switches. The first switch may be configured to switch between an on-state and an off-state based on a value of a first current flowing through a number of resistors and a diode coupled in series with the resistors. The second switch may be configured to switch between the on-state and the off-state based on a value of a second current on a circuit path. The second current is a function of a voltage at a node between two of the resistors and a resistance of the circuit path. The circuit may be configured to provide a temperature reading based on the number of times the first switch or the second switch switches between the on-state and the off-state during a time interval.

Abstract: A system for and method of providing a signal proportional to the absolute temperature of a semiconductor junction is provided. The system comprises: a preprocessing stage configured and arranged so as to process a signal from the semiconductor junction so as to produce a preprocessed signal including a resistance error term; and a temperature to voltage converter stage for converting the preprocessed signal to a voltage proportional to absolute temperature representing the absolute temperature of the semiconductor junction; wherein the system is configured and arranged so as to remove the resistance error term so as to produce a resistance error free signal representative of the semiconductor junction temperature.

Abstract: A method judging a temperature of a chip including using a limited set of temperature sensors and using a knowledge of a power dissipation, estimating a temperature on a surface of a chip and predicting a future temperature of the chip knowing the instruction stream characteristics to be processed by the chip.

Abstract: An I/O circuit for measuring temperatures within an industrial control system uses a stored empirical model together with input from at least one reference temperature sensor to determine inter-terminal temperature differences for more accurate cold junction compensation.

Abstract: Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature.

Abstract: An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference MOSFET measured before applying stress to the semiconductor device and while the semiconductor device is under stress.

Abstract: A temperature sensor circuit includes a band-gap reference voltage circuit. The resistor and diode-connected bipolar transistor of the band-gap reference voltage circuit are separated into a transistor-resistor series circuit and a transistor-diode series circuit. The transistor-resistor series circuit is configured such that an emitter of the bipolar transistor Q21 is connected to a power supply voltage terminal VCC, a collector thereof is grounded via the resistor R2. The transistor-diode series circuit is configured such that an emitter of the bipolar transistor Q20 is connected to the power supply voltage terminal VCC, a collector thereof is connected to a collector of the diode-connected bipolar transistor Q19, and an emitter of the diode-connected bipolar transistor is grounded. A voltage divider circuit 5 having a plurality of output terminals is connected to the transistor-resistor series circuit and the transistor-diode series circuit via first and second buffer circuits 3 and 4, respectively.

Abstract: An apparatus determines cooling characteristics of an operational cooling device used for transferring heat from an electronic device. The operational cooling device is thermally coupled to a heat pipe. The heat pipe has an exposed surface for selective application of heat thereon. Heat from a localized heat source is selectively applied to at least one region of the exposed surface. The heat source is preferably capable of being varied both positionally relative to the exposed surface and in heat intensity. A heat shield is preferably positioned around the exposed surface of the heat pipe to isolate the operational cooling device from the heat from the localized heat source. A temperature detector repeatedly measures a temperature distribution across the exposed surface while the cooling device is in a heat transfer mode. The temperature distribution is then used to thermally characterize the operational cooling device.

Abstract: To provide a PDM output temperature sensor, which is reduced in area and consumption power, provided is a PDM output temperature sensor which includes no reference voltage circuit, thereby having a smaller area and consuming less power correspondingly.

Abstract: A sensor system for determining a physical, measured variable, and includes a sensor and a control/evaluation unit, which are spatially separated from one another and electrically conductively connected via a cable having at least two conductors, wherein provided in the sensor are a temperature measuring element for determining temperature and a sensor identifier for sensor identification. The control/evaluation unit drives the temperature measuring element and the sensor identifier via a shared conductor with a positive voltage or a negative voltage, and, depending on the applied voltage, reads a temperature measured value of the temperature element or an identifying value of the sensor identifier.

Abstract: An embodiment of the invention relates to a temperature-sensing device and a related method. In an embodiment, the device senses a temperature with a first sensing circuit configured to assert a signal when temperature is above a first temperature threshold level, and a second sensing circuit configured to substantially disable a bias current that powers the first sensing circuit when a sensed level of temperature is below a second, lower temperature threshold level. Accordingly, the device is able to draw substantially reduced current from a power source when the sensed temperature level is less than the second threshold level. Other physical parameters such as strain or pressure may also be sensed using the same technique.

Abstract: A temperature data output circuit is provided which is capable of outputting a temperature signal which is enabled when an internal temperature of at least one of the semiconductor memory chips mounted on a multi chip package exceeds a predetermined temperature.

Abstract: A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.

Abstract: Some embodiments include apparatus and methods having a first switch, a second switch, and a circuit coupled to the first and second switches. The first switch may be configured to switch between an on-state and an off-state based on a value of a first current flowing through a number of resistors and a diode coupled in series with the resistors. The second switch may be configured to switch between the on-state and the off-state based on a value of a second current on a circuit path. The second current is a function of a voltage at a node between two of the resistors and a resistance of the circuit path. The circuit may be configured to provide a temperature reading based on the number of times the first switch or the second switch switches between the on-state and the off-state during a time interval.

Abstract: In a body temperature measuring system, power consumption of a data reading device is reduced. A clinical thermometer of this invention is a body temperature measuring system including a body temperature tag and a data reading device. A processing unit of the body temperature tag includes a power supply circuit, a semiconductor temperature sensor for detecting a band gap voltage, and a storage unit configured to store calibration data to calibrate the detected band gap voltage, and is configured to, upon activating the power supply circuit, send the detected band gap voltage via the antenna unit together with the calibration data. The data reading device includes an excitation unit, and a sensing unit configured to sense a change in a magnetic field generated by excitation. The power level of the excitation unit is changed upon sensing the change in the magnetic field.

Abstract: Methods and systems for producing a digital temperature reading are provided. In an embodiment, one or more current sources and one or more switches are used to selectively provide a first amount of current (I1) and a second amount of current (I2) to the emitter of a transistor (Q1), during different time slots of a time period, to thereby produce a first base-emitter voltage (Vbe1) and a second base-emitter voltage (Vbe2), where I1=I2*M, and M is a known constant. An analog-to-digital converter (ADC) digitizes analog signals representative of the magnitudes Vbe1 and Vbe2. A difference is determined between the magnitudes of Vbe1 and Vbe2. A digital calculator produces a digital temperature reading (DTR) based on the difference between the magnitudes of Vbe1 and Vbe2.

Abstract: A temperature detection circuit includes a first voltage source circuit to generate a first voltage having a temperature dependence by utilizing a work function difference of gate electrodes of a plurality of field effect transistors, a second voltage source circuit to generate a reference voltage having no temperature dependence by utilizing a work function difference of gate electrodes of a plurality of field effect transistors, a correction circuit configured to correct the reference voltage and output a corrected voltage, and a subtraction amplifier configured to subtract the corrected voltage from the first voltage, amplify a resulting subtracted voltage, and output a resulting amplified voltage as a correction voltage signal to adjust a temperature coefficient of the correction voltage signal.

Abstract: Described herein are methods and apparatuses for testing an integrated circuit chip including a thermal diode. According to various embodiments, a method for testing an integrated circuit chip including a thermal diode may comprise performing a test operation on the integrated circuit chip, and during the test operation, detecting a signal representative of a temperature sensed by a thermal diode embedded in the integrated circuit chip. Other embodiments may be described and claimed.