Abstract: An apparatus is provided. Latches are coupled in series with one another in a ring configuration. Each latch includes a tri-state inverter, a first resistor-capacitor (RC) network, and a second RC network. The tri-state inverter has a first clock terminal and a second clock terminal. The first RC network is coupled to the first clock terminal. The second RC network is coupled to the second clock terminal. A biasing network is also provided. The biasing network has a first bias voltage generator that is coupled to the first RC network for each latch and a second bias voltage generator that is coupled to the second RC network for each latch.

Abstract: An electronic device that counts the number of set bits in an input vector and asserts an output vector representative of the number of set bits. The electronic device uses a combination of dynamic logic components and static logic components to minimize gate delay. The electronic device may be configured so that dynamic logic components are used to count set bits in the least significant portion of an input vector while static logic components count set bits in the most significant portion of an input vector. The electronic device may include circuitry for preventing a false assertion of an output due to leakage current.

Abstract: A sequential logic circuit includes N state hold circuit where N is an integer. Each of the state hold circuits has a first input terminal, a second input terminal and an output terminal. The state hold circuits are cascaded via the respective first input terminals. The second input terminals of the state hold circuits receive a first clock signal. The first input terminal of one of the state hold circuits in a first stage receives a data signal. The output signal is obtained via the output terminal of one of the state hold circuits in a final stage.

Abstract: A flip-flop (40) for a divide-by-2 frequency divider having a first stage (50) formed by two master-slave-type memory elements (10a, 10b) each having a two-input NOR gate (20a, 20b), and by a second stage (60) with 2 NOR gates (61, 62) connected as an RS flip-flop. The memory elements (10a, 10b) also include an enhancement-type MESFET transistor (30a, 30b), the gates (Ga, Gb) and the drains (Da, Db) of said transistors (30a, 30b) being coupled to the respective inputs of the NOR-gates (20a, 20b).

Abstract: A latch circuit includes a CMOS inverter to which a logic signal is applied to the input through an input terminal, which inverter continues to supply an output signal to its output terminal; and first depletion type p and n-channel MOS transistors connected in series to each other, with the CMOS inverter being interposed therebetween. The latch circuit further includes second depletion type n and p-channel MOS transistors which are supplied, at their gates, with an output signal from the CMOS inverter; the second n-channel MOS transistor being connected between the first p-channel MOS transistor and a power supply terminal, and the second p-channel MOS transistor being connected between the first n-channel MOS transistor and a ground.