Abstract: The invention relates to a method for processing images obtained by a diffraction detector, of a crystalline or polycrystalline material, in which a first image of the material is acquired in a state of reference as well as a second image of the material in a deformed state. The invention is characterised in that, in a calculator, during a first step (E6, E12), a current elastic deformation gradient tensor Fe is given a value determined by calculation, during a second step (E7), the current displacement field induced by the tensor Fe is calculated, during a third step (E8), third digital values of a deformed image {hacek over (g)}(x)=g(x+u(x)) corrected by the current displacement field are calculated, and during an iterative algorithm, iterations of the second and third steps (E12, E7, E8) are carried out on modified values of the tensor r Fe until a convergence criterion is met in relation to the correction to the current value of Fe.

Abstract: A method for measuring the stress of a concave section of a test subject which comprises a metal and has a surface and a concave section, the method including: a detection step for detecting, using a two-dimensional detector, a diffraction ring of diffracted X-rays which is formed by causing X-rays to be incident on the concave section and to be diffracted by the concave section; and a calculation step for calculating the stress of the concave section on the basis of the detection results during the detection step. Therein, the detection step involves causing X-rays to be incident on each of a plurality of sites inside the concave section of the test subject, and detecting, using a two-dimensional detector, the diffraction ring formed by the diffraction of the X-rays by the concave section.

Abstract: A system for fan stress tracking according to an example of the present disclosure includes, among other things, a computing device that has a memory and a processor. The computing device is operable to execute a data module and a comparison module. The data module is operable to access data corresponding to a sensed value of an engine inlet parameter, and is operable to access data corresponding to a fan stress fatigue ratio profile. The fan stress fatigue ratio profile is defined with respect to at least one fan blade. The comparison module is operable to associate the sensed value of the engine inlet parameter with a stress value according to the fan stress fatigue ratio profile. The comparison module is operable to determine whether the stress value meets at least one predetermined criterion.

Abstract: A first inspection step nondestructively inspects a surface side state of a treatment target to be subjected to shot processing of shooting shot media at the treatment target and evaluates that the treatment target is failed when an inspection result deviates from a first allowable range predetermined. A condition setting step sets a shot processing condition in response to the inspection result of the first inspection step for the treatment target evaluated as not failed in the first inspection step. A shot processing step performs shot processing of shooting shot media at the treatment target evaluated as not failed in the first inspection step in the shot processing condition set in the condition setting step. A second inspection step after the shot processing step nondestructively inspects a surface side state of the treatment target.

Abstract: A high resolution grazing incidence X-ray diffraction technique for measuring residual stresses and their gradients as a function of depth in thin film materials on substrates or in bulk materials is disclosed. The technique includes positioning a material relative to an X-ray source and an X-ray detector, performing an Omega scan to determine an Omega offset, setting the incidence angle at a first target incidence angle based on the Omega offset and greater than the critical angle of the material, performing a grazing incidence X-ray diffraction scan, analyzing the results to identify diffraction peaks, selecting a diffraction peak, setting the incidence angle at a second target incidence angle based on the Omega offset and a desired penetration depth, performing two theta scanning on a range of two theta values around the selected diffraction peak, performing refraction correction, and determining residual stress values for the material.

Abstract: A high resolution grazing incidence X-ray diffraction technique for measuring residual stresses and their gradients as a function of depth in thin film materials on substrates or in bulk materials is disclosed. The technique includes positioning a material relative to an X-ray source and an X-ray detector, performing an Omega scan to determine an Omega offset, setting the incidence angle at a first target incidence angle based on the Omega offset and greater than the critical angle of the material, performing a grazing incidence X-ray diffraction scan, analyzing the results to identify diffraction peaks, selecting a diffraction peak, setting the incidence angle at a second target incidence angle based on the Omega offset and a desired penetration depth, performing two theta scanning on a range of two theta values around the selected diffraction peak, performing refraction correction, and determining residual stress values for the material.

Abstract: A high resolution grazing incidence X-ray diffraction technique for measuring residual stresses and their gradients as a function of depth in thin film materials on substrates or in bulk materials is disclosed. The technique includes positioning a material relative to an X-ray source and an X-ray detector, performing an Omega scan to determine an Omega offset, setting the incidence angle at a first target incidence angle based on the Omega offset and greater than the critical angle of the material, performing a grazing incidence X-ray diffraction scan, analyzing the results to identify diffraction peaks, selecting a diffraction peak, setting the incidence angle at a second target incidence angle based on the Omega offset and a desired penetration depth, performing two theta scanning on a range of two theta values around the selected diffraction peak, performing refraction correction, and determining residual stress values for the material.

Abstract: Using an X-ray diffractometer, a processing device, and memory, a database models estimates of a number of cycles to failure for each of a plurality of materials. The model estimates are performed on the material at a plurality of applied fatigues up to a failure point and are based on parameters including residual stress, the micro-strain, and the ratio between X-Ray peak intensity and background intensity of the component material. To inspect a component, the material of the component is selected in the database, and measurements are obtained at two or more different depths of at least a portion of the component. Information about current residual stress, micro-strain, and ratio between X-Ray peak intensity and background intensity are determined from the obtained measurements. Then, a fatigue life of the portion of the component is estimated by matching the information to at least one of the modelled estimates of the number of cycles to failure in the database for the selected material.

Abstract: An apparatus includes an X-ray generating source; a first detecting element adapted to detect intensity of diffracted X-rays of the measuring object at a first detecting position; a second detecting element adapted to detect intensity of the diffracted X-rays of the measuring object at a second detecting position; a moving mechanism adapted to move each of the first detecting element and the second detecting element along a straight line extending in a direction orthogonal to a direction of incidence of the X-rays; a movement control unit adapted to control respective detecting positions of the first detecting element and the second detecting element by driving the moving mechanism; and a stress calculation unit adapted to calculate residual stress of the measuring object based on intensity peaks of the diffracted X-rays detected, respectively, by the first detecting element and the second detecting element each moved by the moving mechanism.

Abstract: A stress analysis apparatus capable of improving the accuracy of a stress value, a method, and a program are provided. A stress analysis apparatus 100 that calculates a residual stress of a sample S includes an analysis unit configured to calculate an error as one of solutions by using an equation including an error term and prescribing a relationship between stress and strain with using measured values of diffracted X-rays with respect to a plurality of scattering vectors and a provisional value when the stress in a direction perpendicular to the surface of the sample S is constant, and a provisional value correction unit configured to correct the provisional value using the calculated error, and the analysis unit and the provisional value correction unit repeat the calculation of the error and the correction of the provisional value.

Abstract: An x-ray interrogation system having one or more x-ray beams interrogates an object (i.e., object). A structured source producing an array of x-ray micro-sources can be imaged onto the object. Each of the one or more beams may have a high resolution, such as for example a diameter of about 15 microns or less, at the surface of the object. The illuminating one or more micro-beams can be high resolution in one dimension and/or two dimensions, and can be directed at the object to illuminate the object. The incident beam that illuminates the object has an energy that is greater than the x-ray fluorescence energy.

Abstract: A multi-layer arrangement of III-V semiconductor layers includes a strained III-V semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained III-V semiconductor layer are determined by generating a first scan in a Qx direction for a chosen reflection in reciprocal space based on diffracted X-Ray beam intensity measurements in the Qx direction. A second scan is generated in a Qz direction for the chosen reflection in the reciprocal space based on diffracted X-Ray beam intensity measurements in the Qz direction. The second scan is aligned with a diffracted X-Ray peak in the first scan which identifies the strained III-V semiconductor layer. The degree of strain of the strained III-V semiconductor layer is determined based on the first scan and the concentration of the constituent element based on the second scan.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: An inspection method for a bearing part includes the steps of: emitting X-rays onto a fatigued portion of a bearing part to be inspected; detecting annular diffracted X-rays (X-ray diffraction ring) diffracted by the fatigued portion; and estimating a use condition of the bearing part to be inspected, based on the detected annular diffracted X-rays (X-ray diffraction ring).

Abstract: An X-ray stress measuring apparatus, for measuring stress on a sample, comprises: a pair of X-ray generating means (10, 11, 10?, 11?) for irradiating X-ray beams, determining an angle defined between the X-ray beams, mutually, at an arbitrary fixed angle, on a plane inclining by an angle desired with respect to a surface of the sample to be measured stress thereon; an X-ray sensor portion (29) for detecting plural numbers of Debye rings (C, C?), which are generated by incident X-ray beams from said pair of X-ray generating means; and a battery (410) for supplying necessary electricity to each of parts of the apparatus, wherein said X-ray sensor portion is made up with only one (1) piece of a 2-dimensional X-ray detector (20) or a 1-dimensional X-ray detector (20?), and is disposed in a position where the plural numbers of Debye rings generated by the incident X-ray beams from the at least one pair of X-ray generating means are adjacent to each other, or intersect with each other, thereby detecting the plural

Abstract: An inspection method for a bearing part includes the steps of: emitting X-rays onto a fatigued portion of a bearing part to be inspected; detecting annular diffracted X-rays (X-ray diffraction ring) diffracted by the fatigued portion; and estimating a use condition of the bearing part to be inspected, based on the detected annular diffracted X-rays (X-ray diffraction ring).

Abstract: An apparatus for analyzing a granulate for producing a pharmaceutical product has a data receiving unit adapted for receiving X-ray diffraction data indicative of a scattering of X-rays irradiated onto the granulate, a processor unit adapted for processing the X-ray diffraction data to derive information indicative of a compressibility and/or a dissolution characteristic of the granulate, and a control unit adapted for controlling a process of producing a pharmaceutical product based on the derived information.

Abstract: A sample (1) is irradiated with X-rays at different incident angles from plural X-ray sources (21, 22). Attention is focused on a Debye-ring of each X-ray diffraction emitted conically from the sample in association with incident X-ray from each of the X-ray sources (21, 22), and stress in the sample (1) is determined on the basis of information of X-ray diffraction appearing at an intersection point between the Debye-ring of the X-ray diffraction recorded on an image plate (30) and an equatorial plane (H) and information of X-ray diffraction appearing in the neighborhood of the intersection point between the Debye-ring and the equatorial plane (H).

Abstract: A sample (1) is irradiated with X-rays at different incident angles from plural X-ray sources (21, 22). Attention is focused on a Debye-ring of each X-ray diffraction emitted conically from the sample in association with incident X-ray from each of the X-ray sources (21, 22), and stress in the sample (1) is determined on the basis of information of X-ray diffraction appearing at an intersection point between the Debye-ring of the X-ray diffraction recorded on an image plate (30) and an equatorial plane (H) and information of X-ray diffraction appearing in the neighborhood of the intersection point between the Debye-ring and the equatorial plane (H).

Abstract: A system and method for non-destructively determining the grain orientation of a crystalline material using x-ray diffraction techniques to non-destructively analyze material and, more particularly, to a system and method for determining the grain orientation of an underlying crystalline material covered by an overlying polycrystalline material. Further, the system and method relate to the use of x-ray diffraction to non-destructively characterize parts and components to determine whether to accept or reject those components or parts for use in application.

Abstract: An X-ray stress measuring apparatus, for measuring stress on a sample, comprises: a pair of X-ray generating means (10, 11, 10?, 11?) for irradiating X-ray beams, determining an angle defined between the X-ray beams, mutually, at an arbitrary fixed angle, on a plane inclining by an angle desired with respect to a surface of the sample to be measured stress thereon; an X-ray sensor portion (29) for detecting plural numbers of Debye rings (C, C?), which are generated by incident X-ray beams from said pair of X-ray generating means; and a battery (410) for supplying necessary electricity to each of parts of the apparatus, wherein said X-ray sensor portion is made up with only one (1) piece of a 2-dimensional X-ray detector (20) or a 1-dimensional X-ray detector (20?), and is disposed in a position where the plural numbers of Debye rings generated by the incident X-ray beams from the at least one pair of X-ray generating means are adjacent to each other, or intersect with each other, thereby detecting the plural

Abstract: An evaluation system for plastic strain includes an X-ray diffraction device for irradiating the surface of a measurement object; and an image analyzing device that generates diffraction intensity curves from X-ray diffraction angle and intensity with an implanted database, which can be obtained in advance from test specimens made of the same material of the measurement object, establishing at least one of the relations between the full width at half maximum of the diffraction intensity curve and plastic strain, and between the integral intensity angular breadth of diffraction intensity curve and plastic strain. The image analyzing device obtains plastic strain of the measurement object based on at least one of the diffraction parameters of the full width at half maximum and the integral intensity angular breadth of a diffraction intensity curve corresponding to the implanted database indicative of the relation between the diffraction parameter and plastic strain.

Abstract: An apparatus for analyzing a granulate for producing a pharmaceutical product has a data receiving unit adapted for receiving X-ray diffraction data indicative of a scattering of X-rays irradiated onto the granulate, a processor unit adapted for processing the X-ray diffraction data to derive information indicative of a compressibility and/or a dissolution characteristic of the granulate, and a control unit adapted for controlling a process of producing a pharmaceutical product based on the derived information.

Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.

Abstract: A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.

Abstract: A calibration technique is provided that utilizes a standard sample that allows for calibration in the wavelengths of interest even when the standard sample may exhibit significant reflectance variations at those wavelengths for subtle variations in the properties of the standard sample. A second sample, a reference sample may have a relatively featureless reflectance spectrum over the same spectral region and is used in combination with the calibration sample to achieve the calibration. In one embodiment the spectral region may include the VUV spectral region.

Abstract: A system and method for non-destructively determining the grain orientation of a crystalline material using x-ray diffraction techniques to non-destructively analyze material and, more particularly, to a system and method for determining the grain orientation of an underlying crystalline material covered by an overlying polycrystalline material. Further, the system and method relate to the use of x-ray diffraction to non-destructively characterize parts and components to determine whether to accept or reject those components or parts for use in application.

Abstract: In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer.

Abstract: In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest.

Abstract: A measuring device for the short-wavelength X-ray diffraction for test samples or work pieces made of lower-atomic-number crystalline and a method thereof are disclosed in the present invention. The measuring device comprises: an X-ray tube, an incident diaphragm, a table, a position-restricting receiving slit for a position-restricted part of a measured sample or work piece, a goniometer, a detector and an energy analyzer, the said X-ray tube and detector are arranged in the two sides of the table on which the sample or work pieces is located, the detector is intended to receive the transmitted diffracted ray. With the short-wavelength X-ray diffraction transmission method in the present invention X-ray diffracting patterns at different depths and different parts of a thicker test sample or work piece made of crystalline material and their distribution can be obtained without destructing the test sample or work piece, and then the data are processed by a computer to obtain phase, residual stress, etc.

Abstract: An optic device, system and method for making are described. The optic device includes a first solid phase layer having a first index of refraction with a first photon transmission property and a second solid phase layer having a second index of refraction with a second photon transmission property. The first and second layers are conformal to each other. The optic device may be fabricated by vapor depositing a first layer and then vapor depositing a second layer thereupon. The first layer may be deposited onto a blank or substrate. The blank or substrate may be rotated during deposition. Further, a computer-controlled shutter may be used to alter the deposition rate of material along an axis of the optic device. Alternatively, the optic device may be moved at varying speeds through a vapor stream to alter the deposition rate of material.

Abstract: A system and method for displaying graphical information indicative of a plurality of material characteristics for a portion of a part under test. Energy is directed at the selected portion of the part under test. Resultant energy is detected from the selected portion of the part under test and data representative of each of a plurality of material characteristics for the portion of the part under test is obtained based, at least in part, upon the detected energy. A plurality of graphs is formed based upon the obtained data. Each of the graphs has information indicative of a separate one of the plurality of material characteristics. The plurality of graphs is displayed discrete from each other in a manner that facilitates substantially simultaneous visual comparisons between the information contained in each of the plurality of graphs.

Abstract: An X-ray thin film inspection apparatus including a sample table on which an inspection target such as a product wafer or the like is mounted, a positioning mechanism for moving the sample table, a goniometer having first and second swing arms, at least one X-ray irradiation unit that are mounted on the first swing arm and containing an X-ray tube and an X-ray optical element in a shield tube, an X-ray detector mounted on a second swing arm, and an optical camera for subjecting the inspection target disposed on the sample table to pattern recognition.

Abstract: Diffractometer and method for diffraction analysis making use of two Euler cradles, a primary and a secondary Euler cradle. The primary Euler cradle supports a source of a radiation beam, having a collimation axis, and a radiation beam detector, having a reception axis, said collimation and reception axis, conveying in a centre of the diffractometer which is fixed with respect to the primary Euler cradle. The source and detector are adapted to move along the primary Euler cradle. The secondary Euler cradle supports the primary Euler cradle and is arranged to rotate the latter.

Abstract: In accordance with the present invention, an x-ray diffraction apparatus and method are provided in which an x-ray or goniometer head can be adjusted in different directions to allow the head to direct x-rays at a part from various positions. In this manner, measurements can be taken from a wider region of the part without requiring that the part itself be moved or that an operator move the unit, which can be relatively heavy. In one aspect, the head can be rotated about its internal axis so that it can more readily direct x-rays along curved surfaces of parts while keeping a substantially constant distance therefrom. It is preferred that the apparatus be a portable unit including adjustment mounts to allow the x-ray head to be moved in the different directions so that it can be transported for use in the field at the site at which a part is located. In this instance, the unit allows for measurements to be taken from the part while it remains in service.

Abstract: An x-ray diffraction technique for measuring a known characteristic of a sample of a material in an in-situ state. The technique includes using an x-ray source for emitting substantially divergent x-ray radiation—with a collimating optic disposed with respect to the fixed source for producing a substantially parallel beam of x-ray radiation by receiving and redirecting the divergent paths of the divergent x-ray radiation. A first x-ray detector collects radiation diffracted from the sample; wherein the source and detector are fixed, during operation thereof, in position relative to each other and in at least one dimension relative to the sample according to a-priori knowledge about the known characteristic of the sample. A second x-ray detector may be fixed relative to the first x-ray detector according to the a-priori knowledge about the known characteristic of the sample, especially in a phase monitoring embodiment of the present invention.

Abstract: An apparatus for detecting properties of a sample. An electron beam generator produces an electron beam and directs the electron beam at a desired point on the sample. The sample thereby emits characteristic x-rays at takeoff angles. A collimator receives and parallelizes the x-rays and converts the takeoff angles of the x-rays to positional differences between the parallelized x-rays. A diffractor receives and deflects the x-rays. A position sensitive detector receives the deflected x-rays and detects the positional differences between the x-rays, and generates signals that are characteristic of the received x-rays. An analyzer receives the signals from the detector and determines the properties of the sample based at least in part on the positional differences between the x-rays.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of ?=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ?) with the Miller indices (hkl) is detected. A diffraction angle ? in a strain state is measured in the vicinity of a Bragg's angle ?0 in a non-strain state. Strains ? with respect to a plurality of ? are calculated from the difference between the measurement values ? and the Bragg's angle ?0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: In one embodiment, a portable apparatus adapted to be battery powered is used to scan an object in situ with x-rays and measure the intensity of the diffracted x-rays. The apparatus includes a scanning head having an x-ray source that is battery powered and an x-ray detector. The x-ray source and the x-ray detector are aligned in one of a plurality of predetermined alignments such that x-rays from the x-ray source are incident upon an object at a specific angle and the x-ray detector is aligned to detect x-rays that are diffracted at a specific angle, wherein the specific angle is a Bragg angle for a particular plane of atoms in the object.

Abstract: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of ?=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ?) with the Miller indices (hkl) is detected. A diffraction angle ? in a strain state is measured in the vicinity of a Bragg's angle ?0 in a non-strain state. Strains ? with respect to a plurality of ? are calculated from the difference between the measurement values ? and the Bragg's angle ?0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

Abstract: In accordance with the present invention, an x-ray diffraction apparatus and method are provided in which an x-ray or goniometer head can be adjusted in different directions to allow the head to direct x-rays at a part from various positions. In this manner, measurements can be taken from a wider region of the part without requiring that the part itself be moved or that an operator move the unit, which can be relatively heavy. In one aspect, the head can be rotated about its internal axis so that it can more readily direct x-rays along curved surfaces of parts while keeping a substantially constant distance therefrom. It is preferred that the apparatus be a portable unit including adjustment mounts to allow the x-ray head to be moved in the different directions so that it can be transported for use in the field at the site at which a part is located. In this instance, the unit allows for measurements to be taken from the part while it remains in service.

Abstract: The invention provides for the making of <200 nm wavelength fluoride crystal optical elements from selected fluoride single crystals of determined quality. The invention relates to a method of determining the optical quality of a fluoride single crystal. The method according to the invention is characterised in that it comprises the following steps: (a) irradiating at least one volume element of the fluoride single crystal, along at least one given family of crystalline planes with a hard X-ray beam, in order to obtain a picture of the diffraction in transmission mode of the hard X-rays across this at least one volume element along this at least one family of crystalline planes, (b) studying the picture obtained in step (a), and (c) calculating the mosaicity of the at least one volume element along the at least one family of crystalline planes, from the study of step (b). The invention finds application in the field of the optical industry.

Abstract: In one embodiment, a portable apparatus adapted to be battery powered is used to scan an object in situ with x-rays and measure the intensity of the diffracted x-rays. The apparatus includes a scanning head having an x-ray source that is battery powered and an x-ray detector. The x-ray source and the x-ray detector are aligned in one of a plurality of predetermined alignments such that x-rays from the x-ray source are incident upon an object at a specific angle and the x-ray detector is aligned to detect x-rays that are diffracted at a specific angle, wherein the specific angle is a Bragg angle for a particular plane of atoms in the object.

Abstract: The apparatus comprises an X-ray source (112), a monochromator (118), a goniometer (170), a position sensitive detector (150), a mechanism to rock or rotate the sample or the X-ray source and computer means (160) for interpreting the data obtained at the position sensitive detector. The method of the present invention includes the steps of generating an X-ray; narrowing the wavelength of the X-ray beam; allowing the particles to diffract the beam; detecting the diffracted beam with a position sensitive detector, collecting the diffraction data from individual particles; rocking or rotating the specimen or the X-ray source for successive times to cover the angular range of reflection of the particles; compilation of the diffraction data in the computer memory to construct the intensity profile for the individual particles; and interpreting the data to determine particle size and particle size distribution.

Abstract: An x-ray diffraction apparatus and method are provided in which an x-ray or goniometer head can be adjusted in different directions to allow the head to direct x-rays at a part from various positions. In this manner, stress measurements can be taken from a wider region of the part without requiring that the part itself be moved or that an operator move the unit, which can be relatively heavy. Preferably, the apparatus is a portable unit including adjustment mounts to allow the x-ray head to be moved in the different directions so that it can be transported for use in the field at the site at which a part is located to allow for measurements to be taken from the part while it remains in service.

Abstract: In one embodiment, a portable apparatus adapted to be battery powered is used to scan an object in situ with x-rays and measure the intensity of the diffracted x-rays. The apparatus includes a scanning head having an x-ray source that is battery powered and an x-ray detector. The x-ray source and the x-ray detector are aligned in one of a plurality of predetermined alignments such that x-rays from the x-ray source are incident upon an object at a specific angle and the x-ray detector is aligned to detect x-rays that are diffracted at a specific angle, wherein the specific angle is a Bragg angle for a particular plane of atoms in the object.

Abstract: An apparatus for in-situ measurement of residual surface stresses comprises a compact x-ray tube and a detector. X-rays emitted by the x-ray tube are diffracted from a specimen surface and intercepted by the detector. The intercepted x-rays are converted into light and transferred by a first fiber optic bundle and a second fiber optic bundle to light detection devices. Intensities of the received light are digitized by the light detection devices to generate a first ring and a second ring with common centers. The residual stress in the specimen surface is calculated based on a difference between the radii of the first ring and the second ring.

Abstract: A method and apparatus for determining the fatigue life of a structure calculate, in real time, the values for the magnitudes of the stress forces imposed at a particular location on the structure, from one or more sensed structural parameters. Also, the associated temperature values of the structure may be calculated or measured. The calculated stress data are continuously examined, in real time, to determine if the direction of their magnitude is increasing or decreasing. If a change in direction is indicated, the previously stored peak data point in the increasing direction is paired with the previously determined peak data point in the decreasing direction to form a cycle pair. The structural fatigue life is then determined, in real time, from this cycle pair.

Abstract: The size of a detail of an object is derived from a data set of data values relating to the object. The data set assigns the data values to positions in a multidimensional space. A direction is selected in the multidimensional space. The spatial resolution of the data set is higher in the selected direction as compared to the spatial resolution in other directions. The size of the detail is derived from data values in the selected direction. The selected direction can extend along the line of intersection which intersects a scanning plane in which the data values are acquired and a transverse plane extending at right angles to the longitudinal axis of the detail. The data values can be acquired an X-ray computed tomography imaging system, a magnetic resonsance imaging system, or a 3D ultrasound imaging system.

Abstract: The apparatus comprises a crystal growing incubator having opposing first and second sides. The apparatus also includes an X-ray system which comprises an X-ray source disposed adjacent to the first side of the crystal growing incubator and an X-ray detector disposed adjacent to the second side of the crystal growing incubator. The X-ray source is configured to irradiate crystalline material grown in the crystal growing incubator and the X-ray detector is configured to detect the presence of diffracted X-rays from crystals grown in the crystal growing incubator. The apparatus preferably further comprises a positioner that positions the incubator and the X-ray system relative to each other. Also provided is a method of screening for crystalline material in its in-situ growth environment using the above described apparatus.