Abstract: An optical device includes a waveguide configured to guide light, a taper integrated with the waveguide on a substrate configured for optical coupling, and an attenuator to degrade unwanted optical signal from the taper. The attenuator extends along one side of the taper, and includes one of a conductive structure, a doped structure and a refractive structure.

Abstract: The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Abstract: An arrayed waveguide grating. The arrayed waveguide grating includes two star couplers and an array of waveguides connecting the star couplers. The T-shaped geometry of the array of waveguides makes possible an AWG with an arbitrarily large free spectral range in a compact form factor. An array mode converter produces a field pattern, at an aperture of a free propagation region of a star coupler, having overlapping modes from adjacent waveguides.

Abstract: The present disclosure relates to a planar optical waveguide and an optical module. A planar optical waveguide according to the present disclosure includes a core and dads provided at an upper portion and a lower portion of the core, respectively, and an end of an upper clad facing a light source is polished to form a first refractive surface inclined at a first angle to refract a light emitted to the upper portion of the core and guide the light to the core. The refractive surfaces are formed at the upper clad and the lower clad of the planar optical waveguide in consideration of beam characteristics of the light source to reduce optical coupling loss without a separate optical waveguide lens.

Abstract: Optical coupler structures have an insulator layer on a substrate, a waveguide structure in the insulator layer, and a cladding layer on the waveguide structure and the insulator layer. Optical grating couplers are on the cladding layer and the waveguide structure is connected between the optical grating couplers. The waveguide structure is discontinuous between the optical grating couplers. The insulator layer includes an array at a transmission blocking region between discontinuous sections of the waveguide structure. This array can be a void opening array of openings or can be a blocking element array of disconnected elements in the insulator layer.

Abstract: A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Abstract: An apparatus includes an optical fiber configured to transport an optical signal. A cross-section of the optical fiber has a longer slow-axis dimension and a shorter fast-axis dimension. The optical fiber includes a core configured to receive and amplify the optical signal, end features optically coupled to the core at opposite ends of the core, and a cladding surrounding the core and end features. The core has a height in the slow-axis dimension and a width in the fast-axis dimension. Each end feature has a height in the slow-axis dimension and a width in the fast-axis dimension. The core has a lower bend loss than the end features. The optical fiber is configured to confine optical power of a fundamental mode in the core and allow optical power of higher-order mode(s) to leak from the core into the end features. Each end feature's height is less than the core's width.

Abstract: The apparatus includes a sensor having a multi-portion dielectric composite. A microstrip transmission line is formed on the dielectric composite and includes an input section, radiator portion, and an output section. The dielectric material adjacent the radiator portion is selected to substantially match that of the certain portions of a live organism being sensed, allowing other constituents of the organism to be sensed. This allow the radiator portion to effectively respond as if it were embedded inside the organism, removing substantial uncertainly from the measurement process. By then applying a plurality of signals to the sensor, the reflected and transmitted components of the signal can be measured and used to determine the amount of certain constituents are present in the organism.

Abstract: A light-emitting device includes a substrate including a photonic cavity and configured to function as a gate, an active layer including a two-dimensional material, a first conductive contact, and a second conductive contact. The wavelength range of light generated by the light-emitting device may be narrowed based on the photonic cavity being included in the substrate, and the intensity and wavelength range of the generated light may be controlled based on the substrate functioning as a gate.

Abstract: An SOI substrate is attracted to and detached from an electrostatic chuck included in a semiconductor manufacturing device without failures. A semiconductor device includes a semiconductor substrate made of silicon, a first insulating film formed on a main surface of the semiconductor substrate and configured to generate compression stress to silicon, a waveguide, made of silicon, formed on the first insulating film, and a first interlayer insulating film formed on the first insulating film so as to cover the waveguide. Further, a second insulating film configured to generate tensile stress to silicon is formed on the first interlayer insulating film and in a region distant from the optical waveguide by a thickness of the first insulating film or larger. The second insulating film offsets the compression of the first insulating film.

Abstract: A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

Abstract: A method of manufacturing an ordered cellular structure including a series of interconnected unit cells. Each unit cell includes at least one straight wall segment. The method includes irradiating a volume of photo-monomer in a reservoir with at least one light beam from at least one light source to form the ordered cellular structure. Irradiating the volume of photo-monomer includes directing the at least one light beam though a series of interconnected apertures defined in a photo-mask covering the reservoir.

Abstract: A photonic device may include a lower cladding layer and a device layer. The device layer may include a first waveguide supporting TE and TM light, and a second waveguide, where a portion of a second waveguide core is proximate to a first waveguide core to provide evanescent coupling. The first waveguide core is formed from one of a first core structure or a second core structure, and the second waveguide core is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE polarized light nTE and an effective index of refraction for TM polarized light nTM, where nTM<nM<nTE such that one of TM or TE light is preferentially evanescently coupled between the first waveguide and the second waveguide.

Abstract: A polarization-sensitive photonic splitter may include a lower cladding layer and a device layer formed from a first waveguide supporting TE and TM light, a second waveguide, a third waveguide, and a transition core. The first waveguide core and the second waveguide core are formed from one of a first core structure or a second core structure, and the third waveguide is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE light nTE and an effective index of refraction for TM light nTM, where nTM<nM<nTE. The transition core is formed from the first core structure adjacent to the second core structure and is coupled to the first transition core at one and the second and third transition cores at the other end.

Abstract: A phosphor element comprises: a support substrate; an optical waveguide for propagating an excitation light through the waveguide, the optical waveguide comprising a phosphor generating a fluorescence, and the optical waveguide comprising an emission side end surface emitting the excitation light and the fluorescence, an opposing end surface opposing the emission side end surface, a bottom surface, a top surface opposing the bottom surface and a pair of side surfaces; a bottom surface side clad layer covering the bottom surface of the optical waveguide; a top surface side clad layer covering the top surface of the optical waveguide; side surface side clad layers covering the side surfaces of the optical waveguide, respectively; a top surface side reflection film covering the top surface side clad layer; side surface side reflection films covering the side surface side clad layers, respectively; and a bottom surface side reflection film provided between the support substrate and the bottom surface side clad la

Abstract: An optical modulator capable of curbing deterioration of transmission properties due to deformation of a housing is provided. Provided is an optical modulator including a substrate (10) on which an optical waveguide (20) is formed and a housing (30) that accommodates the substrate, in which the optical waveguide includes mode conversion branching portions (21, 22) which convert a mode of light waves propagating through the optical waveguide and branch the light waves, a mounting portion (32) protruding from a surface (31) inside the housing and holding the substrate is formed, and the substrate is fixed to the mounting portion in an arrangement in which a fixed end (33) between the substrate and the mounting portion is positioned outside a region including the mode conversion branching portions when the substrate is seen in a plan view.

Abstract: A laser receiver device and an associated input coupler are provided. In this regard, a chip-scale laser receiver device is provided that includes an input coupler that is configured to receive a gaussian beam. The input coupler includes a first waveguide having an optically-transparent material and a second waveguide coupled to the first waveguide. The second waveguide has a tapered configuration that tapers to a predetermined width across a length of not less than 500 micrometers. The input coupler further includes a third waveguide coupled to the second waveguide. The third waveguide has a tapered configuration that tapers to a predetermined width across a length of not less than 250 micrometers. The chip-scale laser receiver device further includes a bus optical waveguide coupled to receive a signal output from the input coupler, and to output a wavelength-multiplexed laser signal.

Abstract: An optical neurostimulation and detection system and method are disclosed. The system includes a medical device including an implantable body, and a stimulation controller that connects to the medical lead device and provides a light source. One or more light emitter modules of the lead body couple light signals of the light source into modulated light signals, and the modulated light signals are emitted through the one or more light emitter modules to stimulate neural cells and/or neural tissue of a subject. In a preferred embodiment, the light emitter modules include a surface acoustic wave (SAW) transducer that couples the light source into the modulated light signals. Such a system provides emitted light incident upon the neural tissue of a much higher resolution than current systems and methods and can provide long-term implantation with fewer side effects and less tissue damage than current systems and methods.

Abstract: An optical element has a substrate; and first to third optical waveguides formed on the substrate and each having a lower clad layer, a core layer, and an upper clad layer, the core layer having a larger refractive index than the lower clad layer and the upper clad layer. The first optical waveguide is optically connected to the second optical waveguide, and the second optical waveguide is optically connected to the third optical waveguide. The first to third optical waveguides have a mesa structure formed in a mesa shape in which at least the upper clad layer and an upper part of the core layer project above the lower clad layer. The core height of the third optical waveguide is lower than the core height of the first optical waveguide. The mesa width of the third optical waveguide is narrower than the mesa width of the first optical waveguide.

Abstract: A single mode waveguide with a straight portion and a curved portion, the curved portion having the shape of an adiabatic bend. The single mode waveguide has a curved portion that is shaped according to an adiabatic bend, with a curvature that varies continuously, and that vanishes at a point at which the curved portion is contiguous with a straight portion of the waveguide. The absence of curvature discontinuities avoids the coupling, within the waveguide, of optical power from a fundamental mode into a higher order mode and the curvature of the curved portion results in attenuation of optical power, in higher order modes, that may be coupled into the waveguide at either end.

Abstract: A structure including a plurality of laser discharge structures located on a planar lightwave circuit, and a single laser source connected to each of the plurality of laser discharge structures by one or more Mach Zehnder switches and a plurality of optical connections.

Abstract: A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide, wherein the electro-optically active stack is separated from an insulator layer of the electro-optically active device by a seed layer; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Abstract: A self-sanitizing surface structure configured to selectively refract light, a method of fabricating a self-sanitizing surface configured to selectively refract light, and a method of decontaminating a surface using selectively refracted light. A waveguide including a support layer below a propagating layer is positioned over a substrate as a self-sanitizing layer. In the absence of a contaminant or residue on the waveguide, UV light injected into the propagating layer is constrained within the propagating layer due to total internal reflection. When a residue is present on the self-sanitizing surface structure, light may be selectively refracted at or near the interface with the residue along the side of the waveguide to destroy the residue. The self-sanitizing surface structure may be configured to refract a suitable amount of UV light in response to a particular type of residue or application.

Abstract: An apparatus is provided. The apparatus comprises a substrate; a low index of refraction region in or on the substrate; an optical waveguide; a cover; wherein at least a portion of the low index of refraction region and the optical waveguide are hermetically sealed under the cover; a chamber formed by the low index of refraction region and the cover; atoms; an environment, in the chamber, including the atoms and having a first index of refraction; a segment of the optical waveguide formed over the low index of refraction region and within the chamber; and wherein the segment has a second index of refraction which is substantially equal to the first index of refraction.

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core has a first width, and a polarizer includes a second waveguide core having a second width that is greater than the first width. The second waveguide core is coupled to the first waveguide core. The polarizer includes a layer that is positioned adjacent to a side surface of the second waveguide core. The layer is comprised of a material having a permittivity with an imaginary part that ranges from 0 to about 15.

Abstract: Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion of the first waveguide. The overlapping portions of the first and third waveguides are configured to transfer optical signals between the first waveguide and the third waveguide.

Abstract: Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A waveguide core has a first section, a second section, and a waveguide bend connecting the first section with the second section. The waveguide core includes a first side surface and a second side surface, the first side surface extends about an inner radius of the waveguide bend, and the second side surface extends about an outer radius of the waveguide bend. The waveguide bend includes a central region and a side region that is arranged adjacent to the central region at the first side surface or the second side surface. The central region has a first thickness, and the side region has a second thickness that is less than the first thickness.

Abstract: A device, such as an electroabsorption modulator, can modulate a light intensity by controllably absorbing a selectable fraction of the light. The device can include a substrate. A waveguide positioned on the substrate can guide light. An active region positioned on the waveguide can receive guided light from the waveguide, absorb a fraction of the received light, and return a complementary fraction of the received light to the waveguide. Such absorption produces heat, mostly at an input portion of the active region. The input portion of the active region can be thermally coupled to the substrate, which can dissipate heat from the input portion, and can help avoid thermal runaway of the device. The active region can be thermally isolated from the substrate away from the input portion, which can maintain a relatively low thermal mass for the active region, and can increase efficiency when heating the active region.

Abstract: A process of forming an electronic device can include forming a channel layer overlying a substrate and forming a barrier layer overlying the channel layer. In an embodiment, the process can further include forming a p-type semiconductor layer over the barrier layer, patterning the p-type semiconductor layer to define at least part of a gate electrode of a transistor structure, and forming an access region layer over the barrier layer. In another embodiment, the process can further include forming an etch-stop layer over the barrier layer, forming a sacrificial layer over the etch-stop layer, patterning the etch-stop and sacrificial layers to define a gate region, forming an access region layer over the barrier layer after patterning the etch-stop and sacrificial layers, and forming a p-type semiconductor layer within the gate region.

Abstract: An optical device including: a waveguide, including a core having a refractive index, for guiding a quasi monochromatic light radiation, of a central wavelength, in a first direction and transmitting the radiation through an exit facet of the waveguide to the external environment according to a transmission coefficient, the exit facet being substantially perpendicular to the first direction, a filter blade, for example an air blade, disposed in the waveguide, parallel to the exit facet and at a first non-zero distance from the exit facet, the filter blade having, in the first direction, a first thickness, the first distance and the first thickness configured so that the transmission coefficient of the waveguide is equal to a first transmission coefficient at the central wavelength.

Abstract: A display device includes a light guide plate 2 having at least one incoming surface and a plurality of light sources (3-1 to 3-4) arranged to face any of the incoming surfaces. The light guide plate 2 has a plurality of prisms 11 that is arrayed along each pattern in a plurality of patterns (21 to 24) displayed on one surface 2b of the light guide plate and reflects light emitted from a light source corresponding to the pattern and entering the light guide plate through the incoming surface toward a direction within a prescribed range of angles with reference to a direction normal to the other surface 2c of the light guide plate. Each prism 11 is formed as a triangular pyramid groove in one surface of the light guide plate 2, and one of inclined surfaces of the triangular pyramid groove is formed as a reflective surface 11a that reflects light emitted from a light source corresponding to a pattern along which the prism is arrayed and entering the light guide plate.

Abstract: A light guide assembly, a light collimation assembly, a backlight module and a display device are provided. The light guide assembly includes a first prism sheet, a dielectric layer and a second prism sheet sequentially laminated, a light refractive index of the dielectric layer is smaller than that of the first prism sheet and that of the second prism sheet, the first prism sheet includes a light incident side surface, and a first plane and a first prism surface, the first plane is closer to the dielectric layer, and the first prism surface includes first prism portions extending along a second direction, the second prism sheet includes a second plane and a second prism surface, the second plane is closer to the dielectric layer, the second prism surface includes second prism portions extending along the second direction, and the second prism portion has a reflection surface.

Abstract: An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

Abstract: Structures including a waveguide arrangement and methods of fabricating a structure that includes a waveguide arrangement. A second waveguide spaced in a lateral direction from a first waveguide, a third waveguide spaced in a vertical direction from the first waveguide, and a fourth waveguide spaced in the vertical direction from the second waveguide. The third waveguide is arranged in the lateral direction to provide a first overlapping relationship with the first waveguide. The fourth waveguide is arranged in the lateral direction to provide a second overlapping relationship with the second waveguide.

Abstract: Disclosed is a method for preparing a solid-state helical photonic crystal structure. The method includes: mixing a nonreactive chiral dopant with a reactive nematic mesogen, followed by curing to form a helical cholesteric liquid crystal; and removing the chiral dopant from the cholesteric liquid crystal while maintaining the helical structure of the cholesteric liquid crystal, to form a solid-state helical liquid crystal.

Abstract: A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nM and (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nTE and an effective index for TM polarized light nTM. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nM and (2) the alternating layers nTM<nM<nTE, and the indices of the upper cladding and the lower cladding are less than nTM, nM and nTE. A polarizer, polarizing beam splitter and coupler using clipped coupling can employ the material having an index nM and the alternating layers.

Abstract: A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

Abstract: Systems, methods, and computer-readable media are disclosed for dual-color frontlit displays with near uniform color mixing. In one embodiment, an example device may include a light emitting diode (LED) array that includes a first LED that emits light having a first color and a second LED that emits light having a second color, and a light guide that includes a surface having a first portion adjacent to the first LED and a second portion adjacent to the second LED. The first portion may include a first number of binary element surface features formed on the surface, and the second portion may include a second number of binary element surface features formed on the surface.

Abstract: A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.

Abstract: A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.

Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.

Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.

Abstract: An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.

Abstract: The present invention provides a photonic device such as a variable optical attenuator, in which two signal components, propagating in modes of two different polarization states, are converted to two different modes of the same polarization state prior to modulation. The modulation of both components is performed by a single device which applies the same modulation strength to both components. The two signal components can be converted back to propagate in the two different polarization states following modulation.

Abstract: An optical coupling connector, an optical coupling system, and a waveguide coupling method are provided. The optical coupling connector is configured to connect an optical fiber array and an optoelectronics chip, and includes an upper-layer connector and a lower-layer connector. The upper-layer connector includes N upper-layer waveguides, where N is a positive integer greater than or equal to 2. The lower-layer connector includes N lower-layer waveguides. The N lower-layer waveguides and the N upper-layer waveguides are coupled in a one-to-one correspondence. Each lower-layer waveguide includes a coupling waveguide portion, a pitch matching waveguide portion, and a signal light amplification waveguide portion.

Abstract: According to some possible implementations, an optical device may include a plurality of photodiodes, wherein alignment of the plurality of photodiodes with a fixed separation to a plurality of multi-mode waveguides disposed on an optical waveguide chip and with the same fixed separation is optimized by alignment of at least one of the plurality of photodiodes to at least one single-mode waveguide and translation of the optical waveguide chip relative to the plurality of photodiodes by a fixed offset of the at least one single-mode waveguide relative to the plurality of multi-mode waveguides.

Abstract: Examples of the present disclosure provide example devices that include an integrated circuit that has debugging capability. In some examples, a device includes an integrated circuit die. The integrated circuit die includes an input/output (IO) base cell and a debug port. The IO base cell has an interface node and a feedback node. The interface node is configured to be coupled to memory, such as via an interposer, for communication therebetween. The IO base cell is configurable to selectively output to the feedback node a signal that is on the interface node. The debug port has an input node and an output node. The input node is electrically connected to the feedback node. The debug port is configurable to selectively output to the output node a signal that is on the input node. The output node is configured to be coupled to a pin exterior to the integrated circuit die.

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator is arranged over a portion of a first waveguide core. The electro-optic modulator may include an electrode, an active layer, a second waveguide core, and a dielectric layer that is arranged between the active layer and the second waveguide core. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied between the electrode and the first waveguide core.