Abstract: An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 ?m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 ?m or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Abstract: Provided are an adsorbent for trapping a radioactive iodine gas generated in a process of oxidizing a nuclear fuel at a high temperature after use and a method of preparing the same, and more particularly, a radioactive iodine gas adsorbent which is formed of bismuth as a main component, thereby exhibiting an excellent radioactive iodine gas trapping capability and an excellent thermal stability after trapping, and a method of preparing the same. An adsorbent for trapping a radioactive iodine gas prepared by a method of preparing an adsorbent for trapping a radioactive iodine gas according to the present disclosure may effectively trap a radioactive iodine off-gas generated in a nuclear fuel pre-treated oxidizing process after use. Particularly, the adsorbent may trap iodine in a larger amount, which is twice or more, than a silver-containing zeolite widely used to trap a radioactive iodine gas, and the trapped iodine forms a stable compound, which is more advantageous for long-term storage.

Abstract: Embodiments disclosed herein include photovoltaic absorber materials (302) and photovoltaic devices (300) having absorber materials (302) with intentionally increased permittivity. Alternative embodiments include methods (200) of producing thin film photovoltaic absorbers (302) from materials having increased permittivity or methods of producing devices having absorbers (302) with increased permittivity. In selected embodiments, the permittivity of an absorber material (302) is increased by incorporating a permittivity increasing material therein.

Abstract: The invention provides a processing method for upgrading an organic phase substance by removing heavy element species from the organic phase substance originating from a resource substance in mild environmental conditions, and further provides a method for collecting removed heavy element species and a method for collecting other substances.

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

Abstract: A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.

Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

Abstract: A gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of 75Selenium. A further gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of 75Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that the subsequent radiation peaks may also be adjusted in relative frequency.

Abstract: Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of <110> at 0°.

Abstract: The present invention provides a GaAs single crystal wafer and a method of manufacturing the same, wherein the wafer is characterized in that, when the strain in the radial direction in the GaAs single crystal wafer is expressed as Sr and the strain in the tangential direction on the circumference of the same is expressed as St, the residual stress in a wafer plane of the semi-insulating GaAs wafer denoted by |Sr?St| is smaller than 1.0×10?5 in the center area of such wafer plane and in that the wafer has such a region in which the value |Sr?St| is not smaller than 1.0×10?5 in the outer area and has such a region in which the value |Sr?St| is smaller than 1.0×10?5 in the direction [011] in the outer area of such wafer plane.

Abstract: Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical gradient freeze process wherein the crystallizing temperature gradient is moved relative to the crystal and/or furnace to melt the raw material and reform it as a monocrystalline compound, and growing the crystal using a vertical Bridgman process on the wherein the ampoule/heating source are moved relative each other to continue to melt the raw material and reform it as a monocrystalline compound.

Abstract: There is provided a method for manufacturing a GaAs wafer comprising: growing a GaAs single crystal by an LEC method; and fabricating a GaAs wafer by slicing the GaAs single crystal obtained by growing the GaAs single crystal, wherein in growing the GaAs single crystal, a crystal-melt interface between the GaAs single crystal and a raw material melt is formed into a convex-shape toward the raw material melt side, and a ratio T1/T2 of a length T1 from an interface between the raw material melt and a liquid encapsulant to a tip of the GaAs single crystal, and an outer diameter T2 of the GaAs single crystal, is in a range of 0.25?T1/T2?0.45, and the GaAs wafer obtained by fabricating the GaAs wafer has a universal hardness of 4000 N/mm2 or more and 4850 N/mm2 or less uniformly in a wafer surface.

Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.

Abstract: An embodiment of the invention provides a single crystal cleaved from a larger crystal and having a cleavage surface that extends along a natural crystallographic plane of the single crystal, the cleavage surface produced by generating a stress field to propagate a crack in the larger crystal along the natural plane, so that during cracking by the stress field a magnitude of a derivative of an energy release rate, G(?), generated by the stress field at a front of the crack as a function of angular deviation, ?, from the natural plane, is less than or equal to twice an effective step energy, ?e, divided by a step height, h.

Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

Abstract: The present invention relates to a composition comprising one or more minerals selected from the group consisting of selenium, molybdenum or tungsten, which is carried out galenically or chemically in a way that the mineral or minerals are released completely or in part, just before, during or shortly after arrival at the large intestine, and their use in the manufacture of a medicament for administering to a mammal for the prevention or reduction of gas formation in the colon thus conditioned abdominal complaints, particularly bloatings, meteorism or abdominal cramps. Furthermore, the invention relates to a procedure for the isolation of acetogenic and butyrogenic bacterial strains that are suitable for therapeutic purposes outlined above.

Abstract: A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane (2?) relative to the cleavage device, setting a tensional intensity (K) by means of tensional fields (3?, 4?), determining an energy release rate G(?) in dependence from a possible deflection angle (?) from the cleavage plane (2?) upon crack propagation, controlling the tensional fields (3?, 4?) such that the crack further propagates in the single crystal, wherein G(0)?2?e(0) and simultaneously at least one of the following conditions is satisfied: ? ? G ? ? ? ? = 0 ? 2 ? ? e h ? ? if ? ? ? 2 ? G ? ? 2 ? 0 ? ? or ( 2.1 ) ? ? G ? ? ? ? 2 ? ? e h ? ? ? ? : ? ? 1 < ? < ? 2 , ( 2.

Abstract: A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a compound having an elemental formula of A1?xB1+yC2+z and having a coefficient of thermal expansion greater than 20 parts-per-million per degree Celsius in at least one direction at one or more operating temperatures. The A component of the compound includes at least one element selected from the group consisting of: at least one Group Ia element and at least one Group Ib element, the B component of the compound includes at least one element selected from the group consisting of: at least one Group V element and at least one Group VIII element, and the C component of the compound includes at least one Group VI element. In addition, x is between ?0.2 and 0.3, y is between ?0.2 and 0.4, and z is between ?0.2 and 0.8.

Abstract: The present invention provides a method of cleaning a GaAs substrate with less precipitate particles after cleaning. This cleaning method comprises an acid cleaning step (S11), a deionized water rinsing step (S12), and a rotary drying step (S13). First, a GaAs substrate with a mirror finished surface is immersed in an acid cleaning solution in the acid cleaning step (S11). In the acid cleaning step, the cleaning time is less than 30 seconds. Next, the deionized water rinsing step performs the cleaned GaAs substrate with deionized water (S12) to wash away the cleaning solution deposited thereon. Subsequently, the rotary drying step dries the GaAs substrate deposited on deionized water (S13). This provides the cleaned GaAs substrate with less precipitate particles.

Abstract: The present invention relates to nanocrystals consisting of a homogeneous ternary or quaternary alloy having the composition M11-xM2xA and M11-xM2xAyB1-y, respectively, a process for its production, as well as to uses of such nanocrystals such as as short wavelength light-emitting devices, and in the detection of analytes, in particular biomolecules.

Abstract: A gamma radiation source comprising selenium-75 or a precursor therefore, wherein the selenium is provided in the form of one or more thermally stable compounds, alloys, or mixed metal phases.

Abstract: An phase-change optical disk comprises a substrate, a first protective layer, a first thermostable layer, a recording layer, a second thermostable layer, a second protective layer, an absorptance control layer, and a heat-diffusing layer which are provided in this order from a side on which a laser beam comes thereinto, wherein a recording layer material has composition ratios which are within a range surrounded by composition points of B3 (Bi3, Ge46, Te51), C3 (Bi4, Ge46, Te50), D3 (Bi5, Ge46, Te49), D5 (Bi10, Ge42, Te48), C5 (Bi10, Ge41, Te49), and B5 (Bi7, Ge41, Te52) on a triangular composition diagram. Recrystallization is not caused even when information is recorded on an inner circumferential portion, a reproduced signal is scarcely deteriorated even when rewriting is performed multiple times, and any erasing residue of amorphous matters scarcely appears at an outer circumferential portion.

Abstract: The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth element D are present as a binary compound CD. In addition, the alloy is substantially free from binary compounds AD, BC, AC, and BD. These alloys can be characterized as semiconducting, quasi-binary, single phase alloys having the formula (AB)x(CD)1−x, where x is between 0 and 1 and where A, B, C, and D are different. The present invention also relates to a method of producing an alloy. The method includes providing a first binary material AB and providing a second binary material CD. The first binary material AB and the second binary material CD are contacted under conditions effective to mix the first binary material AB and the second binary material CD without decomposing either the first binary material AB or the second binary material CD.

Abstract: A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×104 cm−2, a carbon concentration of 2.5 to 20.0×1015 cm−3, a boron concentration of 2.0 to 20.0×1016 cm−3, an impurity concentration other than carbon and boron of at most 1×1017 cm−3, an EL2 concentration of 5.0 to 10.0×1015 cm−3, resistivity of 1.0 to 5.0×108 &OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10−5.

Abstract: The quaternary Zintl material (Et.sub.4 N).sub.4 ?Au(Ag.sub.1-x Au.sub.x).sub.2 Sn.sub.2 Te.sub.9 ! that contains 1-D semiconducting chains composed of four metallic elements is prepared by treating ethylenediamine extracts of a pentanary K--Au--Ag--Sn--Te alloy with Et.sub.4 NI.

Abstract: Novel compound semiconductors are of the general formula, X.sub.5 YZ.sub.4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

Abstract: In measuring a cooling curve by means of thermal analysis of cast iron, a compressed powder moulding or sintered moulding of tellurium, bismuth, boron, zinc and/or aluminum is fixed to the inner surface of a cooling curve measuring cup, and a melt is poured into said cup when primaly crystalized and eutectic temperatures based on the metastable solidification of iron, cementite and silicon cleary appear. This method allows the carbon equivalent, carbon content and silicon content of the cast iron to be determined and the physical and mechanical properties of the iron to be estimated. Additionally, said compressed metallic powder moulding or sintered moulding is arranged at and fixed to said cooling curve measuring cup used in the method, while enclosing a thermocouple.

Abstract: The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.

Abstract: A process for producing bismuth telluride including dissolving tellurium to form a first solution; heating the first solution to approximately 70.degree. C.; stirring the first solution; slowly and quantatively adding an amount of bismuth trioxide (Bi.sub.2 O.sub.3) to produce a Bi/Te second solution wherein the ratio of Bi: Te=2:3; cooling the second solution to approximately 25.degree. C.; preparing a solution of concentrated aqueous ammonia and distilled water; adding the solution of aqueous ammonia and distilled water dropwise to the second solution at approximately 25.degree. C. to form a third solution; rapidly stirring the third solution to produce a precipitate therefrom; separating the precipitate from the third solution by centrifugation; washing the separated precipitate in distilled water; drying the washed precipitate in air to produce a Bi.sub.2 Te.sub.3 O.sub.9.xH.sub.2 O, where x=1, precursor powder; heating predetermined quantities of the dried precursor powder to 250.degree. C.-275.degree.

Abstract: Novel compound semiconductors are of the general formula,X.sub.5 YZ.sub.4,wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

Abstract: A new ternary sulfide alloy exhibits a metal-semiconductor phase transition with hysteresis as a function of temperature. One embodiment of the bistable material includes barium, cobalt, nickel and sulfur in amounts in accordance with the formula Ba(Co.sub.1-x Ni.sub.x)S.sub.2-y, and x is between 0 and 1 and y varies from 0 to 2.

Abstract: Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and subsequently removing the powdered particles from the container and compressing the powdered particles into pellets.

Abstract: A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.

Abstract: Lewis base-borane complexes such as (CH.sub.3).sub.2 S.BHBr.sub.2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammonia atmosphere to displace the base and pyrolyze the resulting complex to BN. Analogous processes may be used to prepare Group IIIA-VA compounds of the formula MM' where M is selected from the group consisting of B, Al, Ga, In, and Tl, and M' is selected from the group consisting of N, P, As, Sb and Bi.

Abstract: Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270.degree. C. to about 330.degree. C. while maintaining the mixture in a quiescent state; (2) maintaining the mixture at from about 270.degree. C. to about 330.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (3) subsequently heating the mixture from the range of from about 270.degree. C. to about 330.degree. C. to the range of from about 500.degree. C. to about 580.degree. C. while maintaining the mixture in a quiescent state; (4) maintaining the mixture at from about 500.degree. C. to about 580.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (5) thereafter maintaining the mixture at from about 500.degree. C. to about 580.degree.

Abstract: Disclosed is a process for treating particles of selenium alloy to reduce fractionation when the particles are subsequently vacuum evaporated onto a substrate which comprises (1) heating particles of an alloy of selenium and an alloying component selected from the group are exposed to oxygen; (2) exposing the particles to water vapor; and (3) subjecting the particles previously exposed to oxygen and water vapor to a vacuum. Also disclosed is a process which comprises (1) providing particles of an alloy of selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof; (2) forming selenium oxide on the surfaces of the particles; (3) converting the selenium oxide on the particle surfaces to selenious acid; and (4) removing the selenious acid from the particle surfaces.

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract: A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Abstract: A process for the preparation of chalcogenide alloy compositions which comprises providing a chalcogenide alloy; admixing therewith crystalline or amorphous selenium; and subsequently subjecting the resulting mixture to evaporation.

Abstract: Disclosed is a process for the preparation of chalcogenide alloys, particularly selenium tellurium alloys, of high purify wherein there is provided a solution mixture of the aforementioned compounds; and thereafter this mixture is subjected to a simultaneous oxidation reaction.

Abstract: A process for controlling fractionation in selenium alloys comprising providing pellets of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size between about 300 micrometers and about 3,000 micrometers, exposing the pellets to an ambient temperature of between about 114.degree. C. and about 190.degree. C. until an exotherm occurs in the pellets resulting in substantially complete crystallization between about 104.degree. C. and about 180.degree. C., grinding the pellets into fresh powder having an average particle size of less than about 200 micrometers, and compressing the fresh powder into fresh pellets having an average weight between about 50 mg and about 1000 mg. The resulting fresh pellets may be heated in a vacuum chamber to vacuum deposit the alloy onto a substrate.

Abstract: A layered photoresponsive imaging member comprised of a supporting substrate; an amorphous photoconductive layer and a hole transport layer dispersed in a resinous binder, which layer is formulated from a solution mixture; and wherein the photoconductive layer is prepared by a process which comprises dissolving an inorganic photoconductive component in a solvent, removing the suspended particles therefrom, depositing the resulting solution on the supporting substrate, and subsequently heating the aforementioned member.

Abstract: A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate.

Abstract: An alloy treatment process is disclosed which comprises providing particles of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, forming crystalline nuclei on at least the surface of the particles while maintaining the substantial surface integrity of the particles, heating the particles to an initial temperature between about 50.degree. C. and about 80.degree. C. for at least about 30 minutes to form a thin, substantially continuous layer of crystalline material on the surface of the particles while maintaining the core of selenium alloy in the particles in an amorphous state, and rapidly heating the particles to at least a second temperature below the softening temperature of the particles that is at least 20.degree. C. higher than the initial temperature and between about 85.degree. C.

Abstract: A method of synthesizing amorphous Group IIIA-Group VA compounds. A first solution is prepared which consists of a tris(trialkylsilyl) derivative of either a Group IIIA or Group VA element dissolved in an organic solvent. A second solution is then prepared which consists of a halide of the other of the Group IIIA or Group VA element dissolved in an organic solvent. Then the first and second solutions are mixed such that a Group IIIA-Group VA compound is formed along with a trialkylhalosilane by-product. The final step of the method consists of removing the trialkylhalosilane by-product and organic solvent mixture to form the Group IIIA-Group VA condensed phase.

Abstract: Amorphous metallic precipitates having the formula (M.sub.1).sub.a (M.sub.2).sub.b wherein M.sub.1 is at least one transition metal, M.sub.2 is at least one main group metal and the integers "a" and "b" provide stoichiometric balance; the precipitates having a degree of local order characteristic of chemical compounds from the precipitation process and useful electrical and mechanical properties.

Abstract: New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point.

Abstract: An amorphous alloy consists of iron and tellurium and has a tellurium content of from about 14 to 90 atomic%. The amorphous alloy can be utilized as an information material for optical recording and the like, and as a magnetic material and the like. The corrosion resistance and particularly heat resistance are excellent.

Abstract: Amorphous metallic precipitates having the formula (M.sub.1).sub.a (M.sub.2).sub.b wherein M.sub.1 is at least one transition metal, M.sub.2 is at least one main group metal and the integers "a" and "b" provide stoichiometric balance; the precipitates having a degree of local order characteristic of chemical compounds from the precipitation process and useful electrical and mechanical properties.