Abstract: A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl.The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.

Abstract: New and improved compacted or powder pressed materials for thermoelectric applications include a body formed from compacted powder material including at least bismuth and tellurium and at least one highly electrically conductive phase. The materials are made in accordance with the general method of the present invention by forming a particulate mixture containing the constituent elements of a first compound including at least bismuth and tellurium and the constituent elements of a second compound capable of forming at least one highly electrically conductive phase, and thereafter, compressing at least a portion of said particulate mixture to form a compacted body of the material. In accordance with a first preferred embodiment, the first and second compounds are first separately prepared from their respective constituent elements. The first and second compounds are then combined and heated to form a melt. Thereafter, the melt is cooled to solid material form and then crushed to form the particulate mixture.

Abstract: A vapor-deposited film of selenium or selenium alloy as a photoreceptor for electrophotography comprises selenium or a selenium alloy and phosphorus contained therein in an amount of not less the 0.5 ppm and adjusted to attain a desired contrast potential. The selenium alloy is selected from Se-Te, Se-As, Se-Bi, and Se-Sb alloys. The film is produced either by adding phosphorus to stock selenium or selenium alloy and then vacuum-depositing the phosphorus-containing selenium or selenium alloy or by simultaneously vapor-depositing selenium or selenium alloy and elemental phosphorus or a phosphorus compound.

Abstract: Disclosed is a process for the preparation of high purity chalcogenide alloys which comprises providing an acid mixture of the chalcogens; forming a solution thereof; and thereafter reacting the solution with a reducing agent.

Abstract: An evaporation source designed so that two or more materials to be evaporated are heated to evaporate by respective heaters, as well as method of using such an evaporation source are disclosed. The evaporation source further includes means for detecting the temperature of the slowly evaporating material and means for controlling the heaters on the basis of the detected temperature. The method of using this evaporation source comprises controlling the temperature of the slowly evaporating material in order to control the temperature of the evaporation source in such a manner that the respective materials are simultaneously heated to evaporate and deposit a film on a substrate.

Abstract: Disclosed is a process for the preparation of chalcogenide alloys in high purity which comprises providing a solution mixture of oxides of the desired chalcogens, and subsequently subjecting this mixture to a simultaneous coreduction reaction.

Abstract: There is disclosed new and improved multiphase thermoelectric alloys and a method for making the same. The alloys are disordered materials having a multiplicity of matrix crystallites separated by generally disordered grain boundaries containing transitional phases and grain boundary regions of various phases including electrically conductive phases having at least one phase having high electrical conductivity.The alloys are formed from a mixture of at least two separately prepared multiple element compounds preferably a first compound Bi.sub.10 Sb.sub.30 Te.sub.60 or Bi.sub.40 Te.sub.48 Se.sub.12 and a second compound Ag.sub.25 Sb.sub.25 Te.sub.50. These compounds while crystalline, have different crystalline structures. They themselves are polycrystalline and do not represent the most stable crystalline structure. The first compound has a rhombohedral crystalline structure and the second compound has a face centered cubic crystalline structure.

Abstract: The problem of CdTe sticking to quartz boats is avoided by preventing any presence of cadmium oxides in the as-compounded CdTe. This is accomplished by distilling the cadmium under a high vacuum immediately prior to the CdTe compounding step.

Abstract: The metal substrate of an electrophotographic member is provided with a selenium-tellurium alloy layer containing 5-30% tellurium, 10-5,000 ppm of a metallic element of the fifth main group, and 10-100 ppm of a halogen. A preferred embodiment contains 15% tellurium, 40 ppm arsenic, and 40 ppm chlorine. The addition of the metallic element of the fifth main group to the selenium-tellurium alloy results in a stabilization of charging potentials in multicycle operation.If the metal substrate is an aluminum drum, the electrophotographic member can be used as a copying drum in high-speed copiers.

Abstract: A process for preparing a selenium alloy highly resistant to the development of persistant bulk space charge during prolonged, electrophotographic cycling comprising heating a mixture comprising selenium, arsenic and chlorine to a temperature between about 290.degree. C. and about 330.degree. C. to form a molten mixture, agitating the molten mixture to blend the components therein, discontinuing or substantially discontinuing all agitation of the mixture to achieve a quiescent state for the mixture, raising the temperature of the mixture to at least about 420.degree. C. for at least about 30 minutes and cooling the mixture until it becomes a solid.

Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.