Abstract: The direct reaction of elemental phosphorus acid catalyzed by hydroiodic acid produces orthophosphorus acid free of orthophosphoric acid and phosphine free of diphosphine.

Abstract: A method for synthesizing indium phosphide that avoids the explosion problem which often occurs in the synthesis procedures which use the direct reaction of elemental phosphorus and elemental indium to produce indium phosphide. The method utilizes specific heating, pressurizing and cooling parameters to safely produce highly pure, stoichiometric, polycrystalline indium phosphide.

Abstract: Method for detoxifying phosphide containing pesticides by treatment with aqueous alkaline reagents optionally containing oxidants and/or surfactants.

Abstract: Heteropoly-acids suitable for use as a component of a variety of oxidation catalysts are prepared by hydrothermally reacting an aqueous slurry which contains an oxide and/or oxyacid each of molybdenum, vanadium and phosphorus and which may optionally contain an oxide and/or oxyacid of tungsten.

Abstract: Phosphine is continuously produced by reacting yellow phosphorus with an aqueous alkali metal hydroxide solution in the presence of an alcohol, with the exclusion of oxygen, at 44 to 90.degree. C. To this end, the reaction is effected in two separate reaction stages. In the first reaction stage, the alkali metal hydroxide solution and phosphorus are reacted with agitation in a molar ratio of 0.7:1 to 0.9:1 and the resulting gaseous phosphine is collected. Resulting liquid phase material containing unreacted phosphorus is delivered to the second reaction stage in which the unreacted phosphorus is reacted with further aqueous alkali metal hydroxide solution. The resulting gaseous reaction products are collected separately from the gaseous phosphine collected in the first reaction stage.

Abstract: Phosphine (hydrogen phosphide) is made by reacting gaseous yellow phosphorus with steam at temperatures of 280 to 400.degree. C in the presence of ammonia in contact with a carbon catalyst.

Abstract: Production of phosphine. The phosphine is produced by reducing, in a first step, anhydrous zinc phosphate to zinc phosphide by treatment with carbon at a temperature higher than 1000.degree. C, and, in a second step, reacting the zinc phosphide formed in the first step with phosphoric acid. The resulting gaseous phosphine is collected, and the resulting zinc phosphate, which is obtained as a difficultly soluble precipitate, is dried, dehydrated and recycled to the first step.

Abstract: A process for producing gallium arsenide or phosphide at temperatures below he sublimation point of arsenic and red phosphorus, respectively, which consists of grinding and tempering a mixture of the constituent elements of the compound to be obtained in substantially stoichiometric amounts.

Abstract: Novel water-soluble inorganic multi-metal polymeric complexes are obtained by reacting, in the presence of water, at least one non-alkaline metal selected from Groups I to VIII of the Periodic Table with an alkali metal hydroxide and a phosphorus-containing compound which is capable of providing active hydrophosphide groups to the reaction under the conditions prevailing in the aqueous reaction medium. In one embodiment, an excess of the non-alkaline metal or metals is introduced into a reaction vessel, already containing an aqueous solution of a phosphorus-containing acid, and the alkali metal hydroxide is thereafter incrementally added. In another embodiment, carried out under high pH conditions, the alkali metal hydroxide and phosphorus-containing compound are each incrementally added to the reaction medium.

Abstract: Technical-grade silicon is purified to produce silicon having less than 1 ppm of electrically effective impurities therein, particularly boron and phosphorus, by treating molten technical silicon with a hydrogen containing gas in the presence of water so as to remove such impurities from the molten silicon.

Abstract: The invention relates to a method for the synthesis of a semiconductor compound comprising at least one element of column III of the periodic table of Mendeleev, and an element of column V having a vapor pressure higher than that of element(s) III at the synthesis temperature of the said compound, and according to which, in a closed space, a liquid mass of element(s) III, placed in a first zone of said space which is heated at relatively high temperatures and is contacted with vapors obtained by evaporation of element V, said element V being placed in a second zone of the said space in a non-gaseous form, the evaporation temperature of element V being higher than that of the coldest point provided in a third zone of the said space, and the said first zone being situated between the second and the third zone.

Abstract: Phosphine is produced from elementary yellow phosphorus and an aqueous alkali metal hydroxide solution in the presence of an alcohol. The phosphine is more particularly made by using an alcohol having from 5 to 10 carbon atoms and a dissolving power for yellow phosphorus of more than 5 g/l; suspending the phosphorus with agitation in the said alcohol in a reaction zone; reacting the resulting suspension with the alkali metal hydroxide solution at temperatures lower than the boiling point of the alcohol; and collecting the resulting issuing gaseous phosphine.

Abstract: A water soluble oxidizing material is packaged with gas releasing pest control agents for decomposing residual gas producing agents.

Abstract: Method of preparing gallium phosphide having a low content of residual impurities by contacting phosphorus vapor in a closed space with a gallium bath which is subjected to a temperature gradient.A nitrogen source, preferably in the form of phosphorus nitride, is placed in the space.

Abstract: An apparatus for preparing a semiconductor compound, having one compound with a substantially higher vapor pressure than the other using a closed horizontal tube disposed in a pressure vessel. The two ends of the tube are located in respective heating ovens having their ends facing away from the tube closed. The heating ovens and tube are disposed within a pressure vessel with the heating ovens having an outside diameter which is considerably smaller than the inside diameter of the pressure vessel and with the total length of the heating ovens arranged one behind the other in the axial direction of the tube substantially smaller than the length of the pressure vessel. In addition, a portion of the tube located between the ovens has associated therewith a separate cooling device.

Abstract: A flexible electromagnetic shield is provided. The shield comprises interlaced filaments of at least one glassy metal alloy. The glassy alloy has a maximum permeability of at least about 50,000 and a coercivity of less than about 0.08 Oe.

Abstract: A method is directed to manufacturing gallium phosphide by reducing gallium orthophosphate in a reducing atmosphere while heating it. In reduction, phosphorus, gallium phosphide and/or phosphine is added as an additive to gallium orthophosphate.

Abstract: In apparatus for the preparation of a semiconductor compound such as gallium phosphide using the Bridgman method in a horizontal system equipped with a heating device and disposed in a pressure vessel, the reaction tube is mounted in a stationary fashion in a reaction boat and the heating device supported so that it is moveable in the direction of the horizontal axis of the system to permit synthesis of the semiconductor compound along with zone melting and drawing of single crystals. A light guide having its free end arranged below the reaction tube is mounted to the heating device for movement therewith and is used to measure the temperature at the reaction boat.

Abstract: There is provided a method for preparing phosphorus compounds wherein phosphorus vapor containing P.sub.2 molecules is condensed at a temperature below the solidification point of red phosphorus and the resulting solid is then reacted with a phosphorus-reactive material. When the phosphorus-reactive material is water at an elevated temperature, phosphine is produced.

Abstract: A process for the production of compact polycrystalline III A - V B compounds such as GaP through direct synthesis from the components in a closed horizontal system, in which at least one of the components has a substantially higher partial vapor pressure over the molten compound being produced than do the other components. In carrying out the process, the components which are more difficult to vaporize are heated in a narrow reaction zone to a temperature in the range of 100.degree. to 500.degree. C below the congruent melting temperature of the compound being produced while the pressure of the easily vaporized components is adjusted so that it amounts to between 0.14 and 0.33 times the decomposition vapor pressure of the compound being produced and thus to 50 to 120 times the decomposition vapor pressure of the solution of the compound being produced in the components which are difficult to vaporize at the reaction temperature.

Abstract: Method for production of a zeolitic material represented by the formula:R.sub.x H.sub.5.sub.-x (Al.sub.y Fe.sub.1.sub.-y).sub.4 (P.sub.l As.sub.1.sub.-l).sub.3 O.sub.16.zH.sub.2 Owherein R represents Na or K, x, y, z and l are numerical values of O.ltoreq.x.ltoreq.5, O.ltoreq.y.ltoreq.1, Z.ltoreq.9 and O.ltoreq.l.ltoreq.1, respectively; which comprises preparing an aqueous solution by dissolving (1) at least one source of aluminum and iron, (2) at least one source of phosphorus and arsenic and (3) at least one source of sodium and potassium in water in the ranges expressed in terms of the molar ratios of their oxides of3.5.ltoreq.(Al, Fe).sub. 2 O.sub.3 /(P, As).sub. 2 O.sub.5 .ltoreq.4.5and(K, Na).sub.2 O/(Al, Fe) .sub.2 O.sub.3 >0.12adjusting the pH of the solution to within the range of the cross-hatched area in FIGS. 1 to 4 and heating the solution at 150 to 250.degree.C in a closed vessel to crystallize the zeolitic material and recovering the objective zeolitic material.

Abstract: A method of making a single crystal intermetallic compound semiconductor which includes growing a single crystal in a crucible while maintaining the extent of the melt beyond the growing surface of its single crystal substantially constant during growth.

Abstract: A method for manufacturing bromine-polyphosphate and bromine-iodine-polyphosphate complex compounds having detergent and disinfecting properties is described.These compounds disinfectant a wide range of application as efficient disinfectants and disinfectants detergents in such fields as medicine, veterinary medicine, agriculture, dairy and meat industries.

Abstract: A high-temperature reaction method is disclosed. The method comprises coupling an inductive heating coil to the contents of a reaction vessel, containing at least one conductive reactant with a coupling efficiency that is different than the coupling efficiency between the coil and the contents of the reaction vessel at the completion of the reaction. An alternating voltage is developed across the coil and the current flowing in the coil is monitored. Typically, the monitored current increases as the reaction proceeds until the reaction is completed whereupon a constant current value is obtained.

Abstract: Waste material consisting substantially of contaminated phosphorous acid is utilized. To this end, the phosphorous acid is introduced, with agitation into a liquid phase. Liquid phase and phosphorous acid are maintained in a ratio by volume between 1:1 and 10:1. The liquid phase is placed in a reactor, maintained between 250.degree. and 400.degree.C and selected from a phosphoric acid of the general formula H.sub.n.sub.+2 P.sub.n O.sub.3n.sub.+1, in which n substantially stands for a number between 1 and 5. Resulting hydrogen phosphide is removed. In the event of continuous operation, newly formed liquid phase is removed from the reactor, at the same rate as it is being formed.

Abstract: A method of preparing III-V material which is or contains one of the compounds aluminum nitride, indium nitride, indium phosphide, gallium phosphide and gallium nitride involves directing a controlled gaseous flow of a hydride of nitrogen or phosphorus as appropriate, preferably ammonia or phosphine, into the vapour of a halide, preferably a chloride, of aluminum, indium or gallium as appropriate at a temperature below the decomposition temperature of the appropriate III-V material and collecting the III-V material formed by the reaction of the hydride and the halide.

Abstract: A single crystal of gallium phosphide including 0.5 atomic ratio or less of indium is grown from a melt consisting of indium, gallium and phosphorous with an atomic ratio of gallium to phosphorous equal to at least 2.0.

Abstract: A process for preparing oxygenated products comprising aldehydes, which have high normal to branched-chain isomer ratios. The process involves using particularly characterized rhodium-containing complex catalysts under a specific combination of carefully controlled reaction conditions. The product aldehydes as made above may be condensed and hydrogenated to form saturated aldehyde dimers thereof.

Abstract: The compound Tl.sub.3 PSe.sub.4 is disclosed. Non-conducting single crystals of the compound are prepared which have outstanding acousto-optical properties including an exceptionally high acousto-optical figure of merit. The crystals are used in various acousto-optical devices including a display device, a laser modulator, a non-collinear acousto-optic filter, and an acoustic delay line.