Abstract: Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

Abstract: NdFeB magnets are very sensitive to corrosion and are provided, among other things, with a layer of aluminum in order to improve their resistance to corrosion. To improve the resistance of an aluminum-coated article, such as the NdFeB magnet, the magnet with the aluminum coating is subjected to a heat treatment at a temperature lower than the melting temperature of the aluminum, which heat treatment improves the resistance to corrosion when subjected to a humid atmosphere at an elevated temperature.

Abstract: Copper precursor formulations, including a copper precursor with at least one of (a) water, (b) a water precursor and (c) a non-ligand organic hydrate, are useful in CVD processes, e.g., in liquid delivery chemical vapor deposition, for forming a copper-containing material on a substrate. The disclosed copper precursor formulations are particularly useful in the formation of copper layers in semiconductor integrated circuits, e.g., for metallization of interconnections in such semiconductor device structures.

Abstract: Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.

Abstract: A flexible film interface includes a flexible film; flexible material attached to a portion of the flexible film; surface metallization on the flexible material, the flexible film having at least one via extending therethrough to the surface metallization; and a floating pad structure including floating pad metallization patterned over the flexible material and the surface metallization, a first portion of the floating pad metallization forming a central pad and a second portion of the floating pad metallization forming at least one extension from the central pad and extending into the at least one via.

Abstract: The present invention relates to a method of fabricating a magnetoresistive head formed by laminating a magnetic layer and a nonmagnetic metal layer including a silver film and used for converting change in magnetic field into change of resistivity of the device. A method of fabricating a magnetoresistive head upon laminating on a substrate a plurality of magnetic layers arranged to put nonmagnetic metal layer therebetween and a bias magnetic layer formed adjacent to one of the magnetic layers to give a magnetization of the specified direction to the magnetic layer, comprising the steps of setting film thicknesses of the nonmagnetic metal layers to be formed, and forming the nonmagnetic metal layers under a condition where temperature of the substrate is held within a temperature range less than an upper limit of a film forming temperature not to cause pin holes in the nonmagnetic metal layer.

Abstract: The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or 0, or combinations thereof.

Abstract: The present invention provides a method of forming a contact structure comprised of: a silicon substrate, a titanium silicide layer, a barrier layer (i.e., TiN or TiNO), and a metal layer (e.g., Al or W). There are three embodiments of the invention for forming the titanium silicide layer and two embodiments for forming the barrier layer (TiN or TiNO). The first embodiment for forming a TiSix layer comprises three selective deposition steps with varying TiCl4: SiH4 ratios. After the TiSix contact layer is formed a barrier layer and a metal plug layer are formed thereover to form a contact structure. The method comprises forming a barrier layer 140 over the silicide contact layer 126; and forming a metal plug 160 over the TiN barrier layer 140. The metal plug 160 is composed of Al or W.

Abstract: A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.

Abstract: Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N.sub.2 for increased reflectivity, is significantly improved by omitting N.sub.2 during at least a portion of deposition. Embodiments include depositing a W nucleation layer on a TiN layer employing gaseous WF.sub.6 during a nucleation phase, omitting WF.sub.6 during an interposition phase during which substantially no W deposition occurs, depositing a W layer employing gaseous WF.sub.6 during a main deposition phase, flowing N.sub.2 gas at least during the terminal portion of the main deposition phase and omitting N.sub.2 gas during at least a portion of the nucleation phase and/or interposition phase, e.g., omitting N.sub.2 gas during the entire interdeposition phase.

Abstract: A material deposition process is disclosed in which apertures of a contact mask used therein have a constricted opening terminating in a `knife edge` in a sidewall thereof near the top mask side, especially within the top 25% of the mask thickness above the substrate. A process is disclosed in which the mask, in addition, has apertures which have larger dimension lower openings on a bottom side of the mask contacting the substrate than constricted openings near the top side of the mask. Single solder bump and "bump on bump" over BLM (ball limiting metallurgy) processes are disclosed which utilize such contact mask to reduce the damage and detaching of such features during processing and subsequent handling.

Abstract: A plasma CVD process for a metal film made from Ti or the like and a formation process of a metal nitride film made from TiN or the like. Each process solves problems on asymmetry of a film shape at an opening portion of a contact hole, corrosion of an underlaying material layer, remaining halogen in the film, and peeling of the film. In the plasma CVD using a mixed gas containing TiCl.sub.4, H.sub.2 and Ar, species for forming a Ti film is efficiently ionized and the Ti ions thus generated are made incident on a substrate to be processed in the direction substantially perpendicular to the substrate, to thus form a metal film being good in coverage. A metal nitride film having a specific thickness is formed by repeating the step of forming such a metal film and the step of nitriding the metal film by plasma nitriding.

Abstract: A method for enhancing the conductivity of transparent conductive electrodes on display substrates by providing patterned auxiliary metallic layers adjacent to the transparent conductive material. The method of the present invention eliminates the need for aligning the auxiliary metal layers with preexisting transparent conductive electrodes by providing for simultaneous patterning of the auxiliary metal layers and formation of the independently addressable electrodes.

Abstract: A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

Abstract: Process for manufacturing circuit boards in which a masking layer (2) is applied to a carrier substrate (1) of insulating material and after producing openings for soldering pads, conductor traces, and through or blind holes, in accordance with a preferred embodiment by laser ablation, a thin electrically conductive layer (5) is applied to the surface of the carrier substrate including the masking layer. Subsequently, the masking layer (2) and the conductive layer deposited thereon, for example copper, are removed and the remaining metal surfaces (6) are chemically reinforced to produce the desired thickness. The process permits the production of dense structures using few process steps and without additional abrasion steps.

Abstract: Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed.

Abstract: A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in an oven in a controlled fashion from a target temperature to a final temperature such that energetically stable Al.sub.2 Cu-.theta.-phases are formed directly among the individual aluminum grains in the aluminum film. The cooling is controlled such that the instantaneous temperature passes through a predetermined temperature profile. Within the range of 320.degree. C. to 200.degree. C., the cooling gradient is less than 6.degree. C. per hour.

Abstract: The invention provides spacers for separating and supporting a faceplate structure and a backplate structure in a flat panel display, and methods for fabricating these spacers. Each spacer is typically made of ceramic, such as alumina, containing transition metal oxide, such as titania, chromia or iron oxide. Each spacer can be fabricated with an electrically insulating core and electrically resistive skins. The insulating core can be a wafer formed of ceramic such as alumina, and the resistive skins can be formed by laminating electrically resistive wafers, formed from alumina containing transition metal oxide, to the outside surfaces of the insulating core. Each spacer can also have a core of electrically insulating ceramic composition made of a ceramic containing a transition metal oxide in its higher oxide states, and electrically resistive outside surfaces made of a ceramic containing a transition metal oxide in lower oxide states.

Abstract: Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.

Abstract: An electrosurgical instrument having a first electrode that includes an elongated, electrically conductive member and a second electrode that includes a layer of electrically conductive material adhered over at least a portion of a distal region of the elongated member and separated therefrom by an insulator. The electrodes receive electrical power in a proximal region of the instrument and apply the power to an object in the body by inducing current flow between the electrodes at the distal region. In a related aspect, the second electrode is configured so that the outer diameter of the distal region is substantially the same as the outer diameter of the distal end of the first electrode. In another aspect, one of the electrodes has a reduced circumferential extent relative to the other electrode to limit an area of current flow between the electrodes and thus restrict the size of the region in which cauterization occurs.

Abstract: A method of enhancing copper adhesion to a substrate includes preparing a single-crystal silicon substrate; forming integrated circuit components on active areas of the substrate; metallizing the integrated circuit components, including metallizing a first copper layer by low-rate CVD, and metallizing a second copper layer by high-rate CVD; and finalizing construction of the structure.

Abstract: A metallized film capacitor formed from a pair of metallized films. Each of the metallized films includes a dielectric film with a metal evaporated electrode formed thereon. One electrode has longitudinal electrode partitioning lines and a plurality of small blocks separated by fuse areas, while the other electrode does not. Each metallized film is formed by moving the film over a screen cylinder having a side wall with openings formed therein. A nozzle is disposed inside the screen cylinder, adjacent to the side wall. Oil is ejected from the nozzle, while the screen cylinder is rotated. The oil passes through the side wall and is deposited on the film to form a pattern thereon. Subsequently, evaporated metal is deposited on the film.

Abstract: On a semiconductor substrate, chips to be products and alignment chips located at a portion a part thereof is left out from a peripheral part of the semiconductor substrate are formed. Contact holes and alignment marks are formed at the chips to be products and the alignment chips. Covering the alignment chips with alignment mark cover parts of a substrate holder, a material for metal wiring is deposited on the semiconductor substrate to form a metal film on the substrate. A mask pattern is formed on the metal film using the alignment marks of the alignment chips on which the metal film is not formed.

Abstract: A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

Abstract: A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.

Abstract: A mesh material for a spacecraft antenna reflector is disclosed. The mesh material has a base material made from a dielectric fabric. A conductive material, such as nickel, is applied to the dielectric mesh. The type and thickness of the conductive material is adjusted to regulate the final conductivity of the reflective surface to a predefined range. The present invention utilizes a range that reduces PIM while at the same time maintains a high degree of RF reflectivity. The preferred range is 0.01 to 10 ohms per square.

Abstract: A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: Preparation of an electrode comprising a substrate of a valve metal or of an alloy thereof having similar properties thereto and a coating thereon comprising at least an outer layer of an electrocatalytically-active material which comprises an oxide of at least ruthenium and an oxide of at least one non-noble metal by a one-step coating process which comprises the vapor phase deposition of a mixture of at least ruthenium and/or oxide thereof and at least one non-noble metal or oxide thereof onto the substrate. The outer layer is of substantially uniform thickness, the contours thereof are at least substantially the same as the contours of the substrate underlying it and the electrode affords an increased surface area for a given mass of catalyst and a more efficient use of catalyst to obtain a given thickness thereof.

Abstract: A vapor deposition device for fabricating a compound semiconductor has many organometallic gas supply systems, each of which for synthesizing and supplying more than one organometallic gas, a first group of valves connected to the organometallic gas supply systems, and the first group of valves for selecting a specific system from among the organometallic gas supply systems by opening and closing the relevant valve group, an organometallic gas supply line connected to the first valve group, a second group of valves connected to the first group of valves for selecting the next organometallic gas supply system to be used among the organometallic gas supply systems by opening and closing the relevant valve group, a vent line connected to the second valve group, a reaction furnace connected to the organometallic gas supply means for continuously propagating different types of thin-films by means of organometallic gases supplied from the organometallic gas supply line, a microcomputer system for controlling the op

Abstract: A slurry is molded from ceramic fibers and/or microparticles to form a soft felt mat which is impregnated with a sol prior to drying the mat. A catalyst for the sol is caused to diffuse into the mat by exposing the mat to the catalyst and subjecting the mat to a soak time during which the catalyst diffuses into the mat and causes the sol to gel. The sol-gel binder forms bonds so that the mat is dimensionally stabilized. The mat is dried to produce ceramic insulation.Ceramic insulation having a consistent microstructure and a fully gelled sol-gel binder through its entire thickness is also provided.

Abstract: A nickel-base gamma-sigma intermetallic matrix composite material suitable for forming gas turbine engine components and structural coatings for such components. The composite material contains, in weight percent, about 20 to 50 chromium, about 0 to 32 molybdenum, and about 0.5 to 7 silicon, with the balance being nickel and incidental impurities. In addition, the composite material may contain aluminum and titanium in amounts of up to about 7 and 3 weight percent, respectively. The resulting intermetallic matrix composite material is characterized by a sigma volume fraction of greater than 30 percent, preferably at least about 50 percent, and may have a dendritic, fibrous or lamellar microstructure. The composite material can be cast to form a component, or deposited by known techniques to form a structural coating on a component.

Abstract: The present invention provides a method for producing a a high-performance black matrix taking the palce of a Cr film black matrix and a high-performance color display thin film, which is comprises steps of vaporizing one or more organic pigments or vaporizing and exciting a metal or an alloy together with said organic pigments, and forming a thin film or a mixed composite thin film onto a substrate by the plasma exciting deposition.

Abstract: An apparatus and process for forming at least one electrode of an electronic component includes the steps of preparing a work; placing a mask on a principal plane of the work; and applying an electrode material over the mask onto the principal plane of the work to form at least one electrode. The mask preferably comprises, for instance, a first masking portion having a substantially rectangular loop shape and a second masking portion having a substantially rectangular shape, and four pseudo masking portions shaped into substantially rectangular strips and which support the first masking portion. In this case, four through holes are formed in the masking member by the synergistic function of the first masking portion, the second masking portion, and the pseudo masking portions.

Abstract: A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400.degree. to 500.degree. C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.

Abstract: An elemental titanium-free liner and cavity cleansing process is provided that allows for the elimination of conventional sputter etch and elemental titanium depositions. A low power plasma etch provides for pre-conditioning/cleansing of cavities such as contacts and vias. A refractory metal is provided as a cavity liner. Preferably, the liner is comprised of several discrete refractory metal liner layers, each having a thickness of about 25-100 .ANG., that can be applied by CVD and/or PVD. A low power plasma cleanse is preferably interposed between each liner layer deposition. A suitable metal plug can be deposited and directed into the cavity to complete cavity filling. Preferably, the metal plug is an elemental aluminum or aluminum alloy plug that is deposited by CVD and force-filled into the cavity to reduce the incidence of micro-voids within the cavity.Elimination of the conventional sputter etch and the high temperature processing (temp..gtoreq..sup..about. 400.degree. C.

Abstract: A clamp for fixturing a substrate when forming and thermally processing upon the substrate a thermally flowable layer. The clamp comprises a backing member having a top member connected through a first mechanical means to the backing member. The backing member and the top member are sized such that a substrate may be clamped between the backing member and the top member. A portion of the top member overlaps the substrate and leaves exposed a first portion of the substrate when the substrate is clamped between the backing member and the top member. The clamp also comprises a shroud connected through a second mechanical means to the backing member, where a portion of the shroud overlaps the top member. The shroud leaves exposed a second portion of the substrate which is smaller than and contained within the first portion of the substrate. The shroud is removable from the backing member while the substrate remains clamped between the backing member and the top member.

Abstract: A method of selectively fabricating metallization on a dielectric substrate is disclosed. A seed layer is sputtered on a polymer dielectric, a patterned photoresist mask is disposed over the seed layer, exposed portions of the seed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched seed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.

Abstract: We have discovered that corrosion of an aluminum article (such as a susceptor) exposed to corrosive halogen-containing species within semiconductor processing apparatus can be avoided by fabricating the article from a high purity aluminum-magnesium alloy having an optimum magnesium content. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed upon or beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium halide layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride. The magnesium content of the aluminum article, to enable formation of a magnesium halide layer, should be in the range of about 0.1% to about 6% by weight, depending on the operational temperature of the article.

Abstract: A nitrogen oxide sensor and a method of manufacturing the sensor are disclosed. The sensor has a gas detecting portion including sensitive material having electric property thereof subject to change in association with presence of nitrogen oxide in gas and a pair of electrodes electrically connected with the gas detecting portion. The gas detecting portion includes, as a main component thereof, metal oxide compound represented by a general formula:Bi.sub.2 Sr.sub.2 (Ca.sub.1-x Y.sub.x)Cu.sub.2 O.sub.8+y(0.8.ltoreq.x.ltoreq.1; 0.ltoreq.y.ltoreq.1)and having the 2212 phase crystal structure and crystalline size greater than 100 .ANG..

Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract: An improved active electrode for use in planar sensors has been discovered, the electrode prepared by a process comprising combining a base component with a metal paste and heating the paste in the presence of air for a time sufficient to oxidize a portion of the electrode to produce the metal/metal oxide electrode. The electrodes may be incorporated into various planar sensor formats, particularly pH and CO.sub.2 sensors.

Abstract: A method for depositing a polysilicon layer on a substrate is provided. The method is performed in a LPCVD reaction chamber at a temperature of between 580.degree. C. to 650.degree. C. During the LPCVD process, at least two different silicon source gases, such as silane (SiH.sub.4), disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or dichlorosilane (SiH.sub.2 Cl.sub.2) are absorbed onto the substrate to form random surface conditions. This grows the polysilicon layer with grain boundaries that are discontinuous and randomly oriented. The different silicon source gases can be injected into the reaction chamber at the same time or separately. In addition, a dopant gas such as phosphine (PH.sub.3), arsine (AsH.sub.3) or diborane (B.sub.2 H.sub.6) can also be injected into the reaction chamber to dope the polysilicon layer in situ.

Abstract: A method is provided for coating a surface of an article with aluminum at a low temperature no greater than about 600.degree. F. and less than a selected temperature exposure above which adversely can affect article integrity. The method includes providing an aluminizing vapor, for example a vapor of an organo-metallic material, which can decompose to substantially pure Al in a low decomposition temperature range. At least the portion of the surface to be coated is heated to the decomposition temperature range and then exposed to the vapor which decomposes and deposits a layer of Al on the surface portion. The Al then is diffused into the portion at a temperature consistent with other heat treatment of the article and which will not affect adversely properties and conditions previously introduced and desired to be retained in the article.

Abstract: A roll of film consists of polyester film having a film thickness of less than 2 .mu.m and having a water content of less than 0.06 weight percent, based on the weight of polyester. The roll of polyester film is suitable for vacuum metallization.

Abstract: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

Abstract: A wiring forming method includes a step of forming an oxide film on a silicon substrate, a step of forming a connection hole whose aspect ratio is larger than 1 in the insulation film, a step of forming an Al wiring film on the entire surface by the bias sputtering method and heating the silicon substrate to cause Al wiring film to flow into and fill the connection hole, and a step of processing Al wiring film to form an Al wiring.

Abstract: This invention discloses methods of making new and improved multi-layer coatings for gas turbine engine parts that are exposed to elevated temperatures, such as blades and vanes in the high pressure compressor and turbine of multi-stage aircraft engines, by applying a diamond film over columnar thermal barrier coatings such as yttria-stabilized zirconia, improving the erosion resistance of the thermal barrier coating.

Abstract: A method is provided for depositing ultra high purity of greater than 99.998% titanium films which comprises generating gaseous TiI.sub.4 in situ by reacting titanium metal starting material with gaseous iodide in a reaction chamber, purifying the TiI.sub.4 by a double distillation process at reduced pressure to produce ultra high purity of greater than 99.998% TiI.sub.4, transferring the ultra high purity TiI.sub.4 in liquid form to a deposition chamber to vaporize the liquid TiI.sub.4 and contacting a heated titanium substrate with the TiI.sub.4 vapor, thereby depositing the ultra high purity Ti films on the substrate.

Abstract: A method is disclosed for operating an electron beam physical vapor deposition apparatus including a vacuum chamber containing an ingot disposed in a crucible, a workpiece disposed above the ingot, and an electron gun for emitting an electron beam to melt and vaporize the ingot to disperse vapors for deposition coating of the workpiece. The method includes directing a primary electron beam with a primary beam focus in a primary scanning pattern across a top surface of the ingot to melt and vaporize the ingot and develop an ingot melt pool floating atop an underlying ingot substrate. A secondary electron beam is superimposed across the ingot top surface in conjunction with the primary electron beam. The secondary electron beam has a secondary beam focus in a secondary scanning pattern to locally and transiently increase vaporization rate of the melt pool.

Abstract: A method is disclosed to deposit aluminum coatings on high temperature superalloys for corrosion, oxidation, and erosion protection using low temperature chemical vapor deposition and an organometallic halide precursor, specifically an aluminum alkyl halide. The process is adapted to protective coatings for turbine parts having internal passages. Due to the lower temperatures used during chemical vapor deposition, a broad range of substrate materials can be utilized. The precursor vapors clean the substrate surfaces by removing native oxides while simultaneously depositing aluminum.