Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.

Abstract: The invention relates to a substrate (1) provided with a thin-film multilayer comprising an alternation of n functional layers (3) having reflection properties in the infrared and/or in solar radiation, and (n+1) coatings (2, 5), where n?1, said coatings being composed of a layer or a plurality of layers (2a, 2b, 5a, 5b), characterized in that, in order to preserve the optical and/or mechanical quality of the multilayer in the case in which the substrate (1) provided with said multilayer is subjected to a heat treatment of the toughening, bending or annealing type, at least one of the functional layers (3) includes a blocker coating (4) consisting of: on the one hand, a “protection” layer made of a material capable of helping to protect the functional layer from oxidizing and/or nitriding attack, immediately in contact with said functional layer; and on the other hand, at least one “adhesion” layer made of a material capable of promoting adhesion, immediately in contact with said “protection” layer.

Abstract: A coated cemented carbide insert is particularly useful for wet or dry milling steels at high cutting speeds, milling of hardened steels, and high feed copy milling of tool steels. The insert is formed by a cemented carbide body including WC, NbC and TaC, a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.

Abstract: Embodiments of the present invention relate to coating deposition and coatings for dental and orthopedic devices that provide prevention or reduction of ion leakage and, in some situations, improved aesthetic appearances.

Abstract: To smoothly deliver a thermal energy required in an active site of a catalyst carried on a carrier. A method of manufacturing a catalyst carrier of the present invention includes the steps of: forming a mixed thin film in which at least metal and ceramics are mixed on a metal base, by spraying aerosol, with metal powders and ceramic powders mixed therein, on the metal base; and making the mixed thin film porous, by dissolving the metal of the mixed thin film into acid or alkaline solution to remove this metal.

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxynitride or an aluminum oxynitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas, nitrogen-containing gas or an oxygen- and nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element.

Abstract: Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.

Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

Abstract: Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

Abstract: A sintered silicon oxide for film vapor deposition having a density of 1.0 to 2.0 g/cm3, three-point flexural strength of at least 50 g/mm2, and a BET specific surface area of 0.1 to 20 m2/g is provided. When this sintered silicon oxide is used for evaporation source of a film, pin holes and other defects of the film caused by the problematic splash phenomenon can be reliably prevented and stable production of a reliable package material having excellent gas barrier property is been enabled. This invention also provides a method for producing such sintered silicon oxide, and this method can be used in a large scale production without requiring any special technology, and therefore, this method is capable of supplying the market with the sintered silicon oxide at reduced cost.

Abstract: Monobutyltinchloride (“MBTC”) is recovered from an effluent vapor stream of a chemical vapor deposition coating process practiced to deposit a fluorine doped tin oxide layer over a glass ribbon. The vapor stream is condensed to a temperature to increase the ratio of MBTC to water in the liquid condensate. The condensed liquid is stored in a phase separation tank to separate the condensed liquid into at least two layers. The layers are individually removed from the phase separation tank, and the layer from the phase separation tank having a density equal to or greater than 80% the density of MBTC is further processed through a vacuum distilling operation to provide MBTC of an acceptable quality to use in the recovered MBTC in the coating process. The recovered MBTC is added to the coating precursors of the chemical deposition process.

Abstract: Disclosed herein is a gradient thin film, formed on a substrate by simultaneously depositing different materials on the substrate using a plurality of thin film deposition apparatuses provided in a vacuum chamber, wherein the gradient thin film is formed such that the composition thereof is continuously changed depending on the thickness thereof by deposition control plates provided in the path through which the different materials move to the substrate. The gradient thin film is advantageous in that the thin film is formed by simultaneously depositing different materials using various deposition apparatuses, so that the composition thereof is continuously changed depending on the thickness thereof, with the result that the physical properties of a thin film are easily controlled and the number of deposition processes is decreased, and thus processing time and manufacturing costs are decreased, thereby improving economic efficiency.

Abstract: A method of making cutting tool inserts with high demands on dimensional accuracy includes: mixing by milling of powders forming hard constituents and binder phase, forming the powder mixture to bodies of desired shape, sintering the formed bodies, grinding with high accuracy the sintered bodies to inserts with desired shape and dimension, optionally edge rounding of cutting edges, and providing the ground inserts with a wear resistant non-diamond or non-diamond-like coating. According to the method, the ground inserts are heat treated prior to the coating operation in an inert atmosphere or vacuum or other protective atmosphere below the solidus of the binder phase for such a time that the micro structure of the surface region is restructured without causing significant dimensional changes. In this way inserts with unexpected improvement of tool life and dimensional accuracy have been achieved.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: A method of surface treatment and surface treated article provided by the same are disclosed. The method of surface treatment of the present invention comprises: providing a substrate; and forming a ceramic layer on a surface of the substrate by atomic layer deposition (ALD), wherein the ceramic layer has a thickness of 1 nm to 1000 nm. The method of surface treatment of the present invention utilizes an atomic layer deposition (ALD) method to form a ceramic layer on a surface of the substrate, in which the formed ceramic layer has excellent uniformity and is randomly and entirely coated on the surface of the substrate. Therefore, the substrate surface treated by the method of the present invention is able to have a color the same as or different to that of the surface of the substrate and simultaneously prevent oxidation/tarnish occurring.

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer with a desired thickness.

Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

Abstract: A stator for a helicoidal down-hole drilling motor is formed with a through-hole, in addition to the main stator bore. The through-hole can be a straight hole extending parallel to the axis of the stator, or a hole of helical form, the helix extending about the axis of the stator. The through-hole can be used to accommodate a communications cable extending through the through-hole, and/or the through-hole can be connected to a fluid supply. The stator is produced from metal-based powder by producing an insert of accurate dimensions corresponding to the dimensions of a bore to be created in the finished stator, the bore having a length of at least 750 mm, supporting the insert within a mould cavity, filling the mould cavity with metal-based powder, subjecting the powder to isostatic pressing, and subsequently removing the material of the insert.

Abstract: The invention describes microchannel apparatus and catalysts that contain a layer of a metal aluminide or are made in a process in which a metal aluminide layer is formed as an intermediate. Certain processing conditions have surprisingly been found to result in superior coatings. The invention includes chemical processes conducted through apparatus described in the specification. Other catalysts and catalyst synthesis techniques are also described.

Abstract: A multi-layer thin film stack, particularly suitable as a component of a solar cell, is deposited on a transparent dielectric substrate. The multi-layer film stack comprises a transparent electrically conductive metal oxide layer deposited over the dielectric substrate, the conductive metal oxide layer having a refractive index less than 2.0, a light transmittance optimizing interlayer having a refractive index between 2.3 and 3.5, deposited over the electrically conductive metal oxide layer, and a silicon layer having a refractive index of at least 4.5 deposited over the light transmittance optimizing interlayer. The film stack can be deposited by any suitable method, but deposition of each of these layers by atmospheric chemical vapor deposition is preferred.

Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

Abstract: The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.

Abstract: Article in the form of a slab or flag fabricated from stone agglomerate coated with thin, transparent films of TiO2 or ZnO, using dry deposition techniques, with a high level of resistance to solar degradation. The article has the form of a slab or flag fabricated from stone agglomerate coated with a thin, transparent film of TiO2 and/or ZnO with low or zero photocatalytic activity, the film being deposited by dry deposition, physical vapour deposition (PVD) or plasma enhanced chemical vapour deposition (PECVD) techniques. The article has a high level of resistance to solar degradation, which means that the resulting material is suitable for external environments.

Abstract: A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

Abstract: An fixed abrasive article is provided which includes a matrix material and abrasive particles embedded within the matrix material. The abrasive particles have a core-shell structure that includes a polycrystalline alpha alumina core and a shell layer overlying the polycrystalline alpha alumina core. The shell layer includes a material selected from the group consisting of silicon oxide and zirconium oxide. Also the polycrystalline alpha alumina core includes grains and having an average grain size of not greater than about 500 nm.

Abstract: Provided is a protective alumina film mainly containing alumina in the ?-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Abstract: A coating apparatus includes non-orthogonal coater geometry to improve coatings on a glass ribbon, and to improve yields of such coatings. The apparatus includes a first arrangement to move the ribbon along a first imaginary straight line through a coating zone provided in a glass forming chamber. The coater has a coating nozzle and an exhaust slot, each have a longitudinal axis. The coating nozzle directs coating vapors toward the coating zone, and the exhaust slot removes vapors from the coating zone. A second arrangement mounts the coater in spaced relation to the path with the coating nozzle and the exhaust slot facing the coating zone. A second imaginary straight line is normal to the longitudinal axis of the coating nozzle, and the first imaginary line and the second imaginary line subtend an angle in the range of greater than zero degrees to 90 degrees.

Abstract: An ultra-fast response, high sensitivity structure for optical detection of low concentrations of hydrogen gas, comprising: a substrate; a water-doped WO3 layer coated on the substrate; and a palladium layer coated on the water-doped WO3 layer.

Abstract: A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.

Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract: A magnetic-recording medium which is provided on a nonmagnetic substrate with at least an orientation-controlling layer for controlling the orientation of a layer formed directly thereon, a perpendicularly magnetic layer having an easily magnetizing axis oriented mainly perpendicularly relative to the nonmagnetic substrate, and a protective layer. The perpendicularly magnetic layer includes two or more magnetic layers, at least one of the magnetic layers is a layer having Co as a main component and containing Pt as well and containing an oxide, and at least another of the magnetic layers is a layer having Co as a main component and containing Cr as well and containing no oxide.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).

Abstract: There are provided a gas barrier laminated film, which is transparent while possessing excellent gas barrier properties and, at the same time, has excellent impact resistance, and a process for producing the same. The gas barrier laminated film comprises a base material, a vapor deposited film of an inorganic oxide provided on the base material, and a gas barrier coating film provided on the vapor deposited film. The gas barrier laminated film is characterized in that the base material on its side where the vapor deposited film is provided, has been subjected to pretreatment or primer coating treatment, and the gas barrier coating film has been formed by coating a gas barrier coating liquid onto the inorganic oxide film and then heating the coating.

Abstract: A coated body that includes a substrate and a coating scheme on the substrate. The coating scheme on the substrate wherein the coating scheme includes an alpha-alumina coating layer that exhibits a platelet grain morphology at the surface of the alpha-alumina coating layer or a kappa-alumina coating layer that exhibits either a lenticular grain morphology or a polyhedra-lenticular grain morphology at the surface thereof or an alpha-kappa-alumina coating layer that exhibits either a large multifaceted grain morphology or a polyhedra-multifaceted grain morphology at the surface thereof.

Abstract: 1-100 nm metal ferrite spinel coatings are provided on substrates, preferably by using an atomic layer deposition process. The coatings are able to store energy such as solar energy, and to release that stored energy, via a redox reaction. The coating is first thermally or chemically reduced. The reduced coating is then oxidized in a second step to release energy and/or hydrogen, carbon monoxide or other reduced species.

Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates be the reaction of alternating doses of cobalt(II) bis(N,N?-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: The invention relates to a structure, comprising a substrate supporting a layer with a photocatalytic and anti-soiling property on at least part of the surface thereof, said layer being based on titanium dioxide (TiO2) which is at least partially crystallized in the anatase form thereof. Said structure is characterised in comprising a sublayer (SC) directly under at least one TiO2 layer, said sublayer having a crystallographic structure which provides assistance to crystallization by heteroepitaxial growth in the anatase form of the TiO2-based upper layer, the photocatalytic property being obtained without any heating step.

Abstract: The invention described and claimed herein relates to a chemical vapor deposition process for depositing a zinc oxide coating on a substrate by delivering two gaseous precursor streams to a surface of the substrate, and mixing the gaseous precursor streams at the substrate surface for a time sufficiently short so as to form a zinc oxide coating at a deposition rate greater than 5 nm/second.

Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.

Abstract: Provided herein are media for storing information and methods of forming such media. A strontium ruthenate (SRO) layer is provided. In certain embodiments, a titanium terminated (Ti-terminated) surface is formed on the SRO layer, and a lead zirconate titanate (PZT) layer is formed on the Ti-terminated surface. In other embodiments, a Ti-terminated surface is formed on the SRO layer, a lead titanate (PTO) layer is formed on the Ti-terminated surface, and a PZT layer is formed on the PTO layer. Preferably, the PZT layer is grown on the Ti-terminated surface, or the PTO layer, by step-flow or layer-by-layer growth, so that the resulting media has an atomically smooth surface.

Abstract: A composite oxide coating is provided that efficiently blocks both ultraviolet (UV) and infrared (IR) radiation. Certain embodiments of this invention relate to a coating having IR and UV blocking characteristics. In certain example embodiments, the coating includes a silica matrix, zinc antimonite, and a UV blocking material such as cerium oxide, thereby permitting the coating after application to block significant amounts of both IR and UV radiation.

Abstract: A composition, a medical implant constructed from the composition, and a method of making the composition are described. The composition is a composite material, comprising a porous, reticulated, open cell network having at least part of its surface coated with blue-black or black oxidized zirconium.

Abstract: A CVD process is defined for producing a ruthenium dioxide or ruthenium metal like coating on an article. The article is preferably for use as an architectural glazing, and preferably has low emissivity and solar control properties. The method includes providing a heated glass substrate having a surface on which the coating is to be deposited. A ruthenium containing precursor, an oxygen containing compound, and optionally water vapor, in conjunction with an inert carrier gas, are directed toward and along the surface to be coated and the ruthenium containing precursor and the oxygen containing compound are reacted at or near the surface of the glass substrate to form a ruthenium dioxide coating.

Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.

Abstract: A photocatalyst layer (TiO2) is formed on the surface of a substrate (glass plate) through the intermediary of a monoclinic undercoat layer (ZrO2), and no dead layer is substantially present between the photocatalyst layer and the undercoat layer. Also, by providing a peel preventing layer between the substrate and the undercoat layer, it is possible to eliminate film peeling between the photocatalyst layer and the substrate, defects and discoloration. A metal element may be doped in the photocatalyst layer, and it is preferable that the metal element is at least one of Sn, Zn, Mo and Fe. The phrase “no dead layer is substantially present” means that the thickness of the dead layer is 20 nm or less. The thickness of the photocatalyst layer is preferably from 1 nm to 1,000 nm, more preferably from 1 nm to 500 nm.

Abstract: An fixed abrasive article is provided which includes a matrix material and abrasive particles embedded within the matrix material. The abrasive particles have a core-shell structure that includes a polycrystalline alpha alumina core and a shell layer overlying the polycrystalline alpha alumina core. The shell layer includes a material selected from the group consisting of silicon oxide and zirconium oxide. Also the polycrystalline alpha alumina core includes grains and having an average grain size of not greater than about 500 nm.