Inorganic Oxygen, Sulfur, Selenium, Or Tellurium (i.e., Chalcogen) Containing Coating (e.g., Phosphosilicate, Silicon Oxynitride, Etc.) Patents (Class 427/255.29)
- Plural metal containing coating (e.g., indium oxide/tin oxide, titanium oxide/aluminum oxide, etc.) (Class 427/255.32)
- Zinc (Zn), cadmium (Cd), or mercury (Hg), containing (Class 427/255.33)
- Gallium (Ga), aluminum (Al), or indium (In) containing (Class 427/255.34)
- Germanium (Ge), tin (Sn), or lead (Pb) containing (Class 427/255.35)
- Titanium (Ti) or zirconium (Zr) containing (Class 427/255.36)
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Patent number: 7851385Abstract: The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.Type: GrantFiled: September 30, 2008Date of Patent: December 14, 2010Assignee: Applied Materials, Inc.Inventors: Matthew Spuller, Melody Agustin, Meiyee (Maggie Le) Shek, Li-Qun Xia, Reza Arghavani
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Publication number: 20100304106Abstract: A gas barrier laminate film including an organic compound layer and an oxide inorganic compound layer and having both excellent gas barrier properties and durability. The gas barrier laminate film comprises an organic compound layer, a silicon atom-containing compound layer on the organic compound layer, and an inorganic compound oxide layer on the silicon atom-containing compound layer.Type: ApplicationFiled: May 27, 2010Publication date: December 2, 2010Applicant: FUJIFILM CORPORATIONInventors: NOBUHIKO TAKANO, TOMOYUKI KIKUCHI
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Patent number: 7842342Abstract: A method for manufacturing a protective layer such that when the protective layer is formed in a film-forming chamber, the partial pressure of water in the film-forming chamber is controlled by the exhaust velocity of the water in the film-forming chamber. During formation of the protective layer the total pressure in the film-forming chamber is kept constant. In addition, the partial pressure of the water in the film-forming chamber is controlled while introducing a gas into the film-forming chamber, thereby controlling the ratio of the partial pressure of hydrogen to the partial pressure of oxygen in the film-forming chamber.Type: GrantFiled: September 11, 2006Date of Patent: November 30, 2010Assignee: Panasonic CorporationInventors: Yoshinao Ooe, Kazuo Uetani, Akira Shiokawa, Kaname Mizokami, Hiroyuki Kado
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Publication number: 20100274176Abstract: A variety of article and systems including wound care systems, methods for making the wound care systems, bactericidal, and methods for treating wounds using these systems are disclosed. The wound care systems may include a first material comprising one or more fibers or porous media. The one or more fibers or porous media may be coated with a second material that is capable of inhibiting the growth of bacteria and killing the bacteria to render the wound care system sterile, increasing the absorbency of the first material, or both upon exposure to light. The first material may be cotton, or any suitable fibrous material, the second material may be TiO2, and the light may be UV or visible light. A variety of methods including ALD may be used to coat the first material.Type: ApplicationFiled: April 23, 2010Publication date: October 28, 2010Inventors: Helmut Baumgart, Diefeng Gu
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Patent number: 7811634Abstract: The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. The method comprises volatizing at least one source material of a sulfide of a pre-determined composition to form a sulfur-bearing thin film composition on a substrate and simultaneously inhibiting any excess quantity of sulfur-bearing species volatilized from the at least one source material from impinging on the substrate. The method improves the luminance and emission spectrum of phosphor materials used for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.Type: GrantFiled: January 29, 2004Date of Patent: October 12, 2010Assignee: iFire IP CorporationInventors: Yongbao Xin, Jim Stiles, Chi Kit Leung, Terry Hunt, Joe Acchione
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Patent number: 7791272Abstract: A light-emitting element includes a protective layer in contact with an upper electrode and a circular polarizer in contact with the protective layer.Type: GrantFiled: December 20, 2006Date of Patent: September 7, 2010Assignee: Canon Kabushiki KaishaInventors: Tomoyuki Tamura, Ichiro Kataoka
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Publication number: 20100221428Abstract: Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD.Type: ApplicationFiled: April 3, 2006Publication date: September 2, 2010Inventor: Christian Dussarrat
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Patent number: 7776396Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.Type: GrantFiled: April 21, 2005Date of Patent: August 17, 2010Assignee: Applied Microstructures, Inc.Inventors: Boris Kobrin, Jeffrey D. Chinn, Romuald Nowak, Richard C. Yi
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Patent number: 7763317Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.Type: GrantFiled: March 30, 2007Date of Patent: July 27, 2010Assignee: Intel CorporationInventors: James M. Blackwell, Willy Rachmady, Gregory J. Kearns, Darryl J. Morrison
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Publication number: 20100129994Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.Type: ApplicationFiled: February 27, 2008Publication date: May 27, 2010Inventors: Yousef Awad, Sebastien Allen, Michael Davies, Alexandre Gaumond, My Ali El Khakani, Riadh Smirani
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Patent number: 7713584Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.Type: GrantFiled: December 22, 2005Date of Patent: May 11, 2010Assignee: ASM International N.V.Inventors: Timo Hatanpaa, Marko Vehkamaki, Mikko Ritala, Markku Leskela
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Publication number: 20100068894Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.Type: ApplicationFiled: October 13, 2009Publication date: March 18, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Ziyun Wang, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum
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Patent number: 7678422Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.Type: GrantFiled: December 4, 2007Date of Patent: March 16, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Hareesh Thridandam, Manchao Xiao, Heather Regina Bowen, Thomas Richard Gaffney
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Patent number: 7651732Abstract: Films of magnesium mixed with titanium are produced by non-equilibrium alloying processes such as electron beam evaporation of magnesium and titanium ingots in a very low pressure chamber. Such magnesium-titanium films form as single phase solid solutions. Titanium is inherently resistant to corrosion and its admixture with magnesium in solid solution provides a new composition that is less subject to intra-film galvanic corrosion. The magnesium-titanium films also provide relatively hard and strong coatings.Type: GrantFiled: September 7, 2007Date of Patent: January 26, 2010Assignee: GM Global Technology Operations, Inc.Inventors: Yang T. Cheng, Mark W. Verbrugge, Michael P. Balogh, Daniel E. Rodak, Michael Lukitsch
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Patent number: 7651959Abstract: A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at ?50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.Type: GrantFiled: December 3, 2007Date of Patent: January 26, 2010Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Jeongseok Ha, Nobuo Matsuki
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Patent number: 7641937Abstract: The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(?SeMe)]2 precursor.Type: GrantFiled: May 27, 2004Date of Patent: January 5, 2010Assignee: In-Solar Tech Co., Ltd.Inventor: In-hwan Choi
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Publication number: 20090324930Abstract: An environmental coating system for silicon based substrates wherein a porous intermediate barrier layer having an elastic modulus of about 30 to 150 GPa is provided between a silicon metal containing bondcoat and a ceramic top environmental barrier layer.Type: ApplicationFiled: June 25, 2008Publication date: December 31, 2009Applicant: UNITED TECHNOLOGIES CORPORATIONInventors: Sonia Tulyani, Tania Bhatia
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Patent number: 7628897Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: GrantFiled: September 12, 2003Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Publication number: 20090297711Abstract: A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH ??Formula (I) wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.Type: ApplicationFiled: May 21, 2009Publication date: December 3, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Steven Gerard Mayorga, Mary Kathryn Haas, Mark Leonard O'Neill, Dino Sinatore
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Patent number: 7622396Abstract: A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.Type: GrantFiled: June 6, 2008Date of Patent: November 24, 2009Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuyuki Okuda, Yasushi Yagi, Toru Kagaya, Masanori Sakai
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Patent number: 7601404Abstract: A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.Type: GrantFiled: June 9, 2005Date of Patent: October 13, 2009Assignee: United Microelectronics Corp.Inventors: Ying-Wei Yen, Yun-Ren Wang, Shu-Yen Chan, Chen-Kuo Chiang, Chung-Yih Chen
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Patent number: 7597938Abstract: A method of making an oven door, or other coated article, is provided so as to have a color suppression coating on a substrate such as a glass substrate. Flame pyrolysis (or combustion CVD) is used in depositing at least part of a color suppression coating. For example, in an example embodiment of this invention, flame pyrolysis can be used to deposit a single SnO2 layer from suitable Sn inclusive precursor(s), or alternatively a multi-layer coating may be formed at least partially using flame pyrolysis. In another example embodiment, the coating may include a base layer of silicon oxide formed using flame pyrolysis, and another layer of tin oxide formed in any suitable manner over the base layer of silicon oxide.Type: GrantFiled: November 29, 2004Date of Patent: October 6, 2009Assignee: Guardian Industries Corp.Inventor: Scott V. Thomsen
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Patent number: 7597951Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.Type: GrantFiled: March 20, 2006Date of Patent: October 6, 2009Assignee: Sandvik Intellectual Property ABInventors: Carl Björmander, Markus Rodmar
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Patent number: 7585545Abstract: The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.Type: GrantFiled: June 28, 2004Date of Patent: September 8, 2009Assignee: Ifire IP CorporationInventors: Yongbao Xin, Joe Acchione, Terry Hunt
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Patent number: 7575775Abstract: The present invention is a low pressure physical vapor deposition method for the deposition of multi element sulfide thin film phosphor compositions for electroluminescent devices where a thermal source comprising a polysulfide compound provides the source of sulfur species for phosphor film deposition and/or annealing. The method is particularly useful for the deposition of phosphors for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.Type: GrantFiled: October 6, 2004Date of Patent: August 18, 2009Assignee: Ifire IP CorporationInventors: James Alexander Robert Stiles, Paul Barry Del Bel Belluz, John Wesley Moore
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Patent number: 7517548Abstract: A method of forming a ferroelectric thin film containing vinylidene fluoride homopolymer, including the steps of (i) preparing a green powder of vinylidene fluoride homopolymer of crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator, (ii) forming a thin film on a substrate surface by using vinylidene fluoride homopolymer of crystal form I alone or as main component obtained from the green powder product of vinylidene fluoride homopolymer of I-form crystal structure alone or as main component, and (iii) subjecting the thin film of vinylidene fluoride homopolymer formed in step (ii) above to polarization.Type: GrantFiled: September 22, 2005Date of Patent: April 14, 2009Assignee: Daikin Industries, Ltd.Inventors: Takayuki Araki, Tetsuhiro Kodani
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Publication number: 20090035463Abstract: Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.Type: ApplicationFiled: August 3, 2007Publication date: February 5, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Anthony Dip
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Patent number: 7485349Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.Type: GrantFiled: October 25, 2006Date of Patent: February 3, 2009Assignee: ASM Genitech Korea Ltd.Inventors: Won-Yong Koh, Chun-soo Lee
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Patent number: 7479306Abstract: A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC?CH, C?CH2, C?C or a [S]n linkage, where n is a defined above.Type: GrantFiled: May 18, 2005Date of Patent: January 20, 2009Assignee: International Business Machines CorporationInventors: Daniel C. Edelstein, Stephen M. Gates, Alfred Grill, Michael Lane, Qinghuang Lin, Robert D. Miller, Deborah A. Neumayer, Son Van Nguyen
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Patent number: 7476420Abstract: A process for producing metal oxide thin films on a substrate by the ALD method comprises the steps of bonding no more than about a molecular monolayer of a gaseous metal compound to a growth substrate, and converting the bonded metal compound to metal oxide. The bonded metal compound is converted to metal oxide by contacting it with a reactive vapor source of oxygen other than water, and the substrate is kept at a temperature of less than 190° C. during the growth process. By means of the invention it is possible to produce films of good quality at low temperatures. The dielectric thin films having a dense structure can be used for passivating surfaces that do not endure high temperatures. Such surfaces include, for example, organic films in integrated circuits and polymer films such as in organic electroluminescent displays and organic solar cells. Further, when a water-free oxygen source is used, surfaces that are sensitive to water can be passivated.Type: GrantFiled: November 19, 2004Date of Patent: January 13, 2009Assignee: ASM International N.V.Inventors: Jarmo Skarp, Mervi Linnermo, Timo Asikainen
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Patent number: 7470474Abstract: A magnetic recording medium which is provided on a nonmagnetic substrate 1 with at least an orientation-controlling layer 3 for controlling the orientation of a layer formed directly thereon, a perpendicularly magnetic layer 4 having an easily magnetizing axis oriented mainly perpendicularly relative to the nonmagnetic substrate 1, and a protective layer 5 and characterized in that the perpendicularly magnetic layer 4 includes two or more magnetic layers, that at least one of the magnetic layers is a layer 4a having Co as a main component and containing Pt as well and containing an oxide and that at least another of the magnetic layers is a layer 4b having Co as a main component and containing Cr as well and containing no oxide.Type: GrantFiled: April 7, 2004Date of Patent: December 30, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Akira Sakawaki, Kenji Shimizu, Kazuo Kobayashi, Hiroshi Sakai, Soichi Oikawa, Takeshi Iwasaki, Tomoyuki Maeda, Futoshi Nakamura
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Patent number: 7470296Abstract: A cutting tool insert particularly for turning of steel comprising a body and a coating with a first (innermost) layer system of at least two layers of TiCxNyOz with x+y+z?1 with a total thickness of from about 0.7 to about 4.5 ?m, a second layer system to a large extent consisting of Al2O3 and an outermost layer system comprising one or several layers in sequence of TiCxNy (x+y?1) with individual thicknesses of greater than about 0.15 to about 0.8 ?m and a layer with Al2O3 with a thickness greater than about 0.1 to about 0.4 ?m with a total thickness of the outermost layer system thinner than about 2.5 ?m and a total thickness of the coating in the range of from about 2.0 to about 12.0 ?m.Type: GrantFiled: July 13, 2005Date of Patent: December 30, 2008Assignee: Sandvik Intellectual Property ABInventors: Mikael Lindholm, Markus Rodmar, Anders Jonsson
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Patent number: 7462372Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.Type: GrantFiled: September 7, 2001Date of Patent: December 9, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshimitsu Konuma, Hiroko Yamazaki
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Publication number: 20080299288Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.Type: ApplicationFiled: May 5, 2008Publication date: December 4, 2008Inventors: Boris Kobrin, Dangaria Nikunji Hirji, Romuald Nowak, Michael T. Grimes
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Publication number: 20080299313Abstract: A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body.Type: ApplicationFiled: May 2, 2008Publication date: December 4, 2008Applicant: Seiko Epson CorporationInventor: Takeshi Kijima
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Publication number: 20080292811Abstract: Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.Type: ApplicationFiled: May 25, 2007Publication date: November 27, 2008Inventors: YOUNG-JIN CHOI, Soo Young Choi, Qunhua Wang, Weijie Wang
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Patent number: 7452569Abstract: In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.Type: GrantFiled: September 21, 2006Date of Patent: November 18, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Ho Lee, Jung-Sik Choi, Jun-Hyun Cho, Youn-Joung Cho, Tae-Sung Kim, Mi-Ae Kim, Kyoo-Chul Cho
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Publication number: 20080268153Abstract: A thin-film forming method of this invention forms a thin film on a wafer. This method is capable of improving the quality yield of wafers. The thin-film forming method includes the step of suctioning a flow of a film-forming gas from both sides of a conveyance path while conveying a wafer along the conveyance path. The conveyance path extends in a direction of passing through the gas flow.Type: ApplicationFiled: April 10, 2008Publication date: October 30, 2008Applicant: OKI ELECTRIC INDUSTRY CO, LTD.Inventor: Tetsuya Kitagawa
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Publication number: 20080254232Abstract: An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.Type: ApplicationFiled: April 9, 2008Publication date: October 16, 2008Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Roy G. GORDON, Hoon KIM, Harish BHANDARI
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Publication number: 20080241384Abstract: A deposition apparatus and deposition method for forming a film on a substrate are disclosed. A film is deposited on a substrate by exposing the substrate to different flow directions of reactant gases. In one embodiment, the substrate is rotated in the reaction chamber after a film having an intermediate thickness is formed on the substrate. In other embodiments, the substrate is transferred from one reaction chamber to another after a film having an intermediate thickness is formed on the substrate. Accordingly, a film having a uniform thickness is deposited, averaging out depletion effect.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Applicant: ASM Genitech Korea Ltd.Inventors: Sang Jin Jeong, Dae Youn Kim, Jung Soo Kim, Hyung Sang Park, Chun Soo Lee
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Publication number: 20080242111Abstract: A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.Type: ApplicationFiled: February 14, 2008Publication date: October 2, 2008Inventors: Timothy P. Holme, Friedrich B. Prinz, Masayuki Sugawara
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Patent number: 7422805Abstract: Coated cemented carbide cutting tool inserts for bimetal machining under wet conditions at moderate cutting speeds, and in particular, cutting tool inserts for face milling of engine blocks formed from alloys of cast iron and aluminium and/or magnesium. The inserts are characterized by a submicron WC—Co cemented carbide and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN.Type: GrantFiled: February 15, 2005Date of Patent: September 9, 2008Assignee: Sandvik Intellectual Property AktiebolagInventor: Ingemar Hessman
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Patent number: 7387816Abstract: A method of making a scratch resistant coated article is provided, the coated article also being resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain example embodiments, the method includes using flame pyrolysis to deposit a layer, and then forming an anti-etch layer(s) over at least the underlayer(s) deposited by flame pyrolysis.Type: GrantFiled: November 24, 2004Date of Patent: June 17, 2008Assignee: Guardian Industries Corp.Inventors: Scott V. Thomsen, Rudolph Hugo Petrmichl, Nestor P. Murphy, Vijayen S. Veerasamy
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Patent number: 7384665Abstract: A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process. In a second embodiment, the silation layer is used to protect an array of filters from physical damage during detaping operations. In a third embodiment, the silation layer is used before fabrication later filters in a color filter array to prevent damage to previous filter layers.Type: GrantFiled: May 29, 2003Date of Patent: June 10, 2008Assignee: Intel CorporationInventor: Neil Wester
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Patent number: 7348042Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.Type: GrantFiled: May 3, 2002Date of Patent: March 25, 2008Assignee: Novellus Systems, Inc.Inventors: Tony P. Chiang, Karl F. Leeser
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Patent number: 7258895Abstract: The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first species monolayer is discontinuously formed over the substrate. The substrate having the discontinuous first species monolayer is exposed to a gaseous second precursor different from the first precursor effective to react with the first species to form a second species monolayer, and effective to form a reaction product of the second precursor with substrate material not covered by the first species monolayer. The substrate having the second species monolayer and the reaction product is exposed to a third gaseous substance different from the first and second precursors effective to selectively remove the reaction product from the substrate relative to the second species monolayer. Other implementations are contemplated.Type: GrantFiled: August 6, 2003Date of Patent: August 21, 2007Assignee: Micron Technology, Inc.Inventor: Gurtej S. Sandhu
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Patent number: 7220451Abstract: Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.Type: GrantFiled: August 10, 2004Date of Patent: May 22, 2007Assignee: ASM International N.V.Inventors: Titta Aaltonen, Petra Alén, Mikko Ritala, Markku Leskelä
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Patent number: 7211295Abstract: Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.Type: GrantFiled: April 23, 2004Date of Patent: May 1, 2007Assignee: Tokyo Electron LimitedInventors: Yutaka Takahashi, Hitoshi Kato, Katsutoshi Ishii, Kazutoshi Miura
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Patent number: 7211296Abstract: Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Among other uses, these structures can be used as coatings on optical fibers, as coatings on implants, as wispering galleries, in electrochemical devices, and in nanolasers.Type: GrantFiled: August 22, 2003Date of Patent: May 1, 2007Assignee: Battelle Memorial InstituteInventors: Bradley R. Johnson, Michael J. Schweiger, Brett D. MacIsaac, S. Kamakshi Sundaram
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Patent number: 7208195Abstract: A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the substrate is lower than the condensation temperature of the component. The liquid deposit is then cooled to produce a solid phase film. The invention can provide two or more vapor phase components. The invention can be used to deposit a wide variety of layers, including thin films of metallic, semiconductor and nonmetallic inorganic materials. The invention is useful for forming solid electrolytes and the electrodes for batteries, fuel cells and other electromagnetically active devices.Type: GrantFiled: March 27, 2002Date of Patent: April 24, 2007Assignee: Ener1Group, Inc.Inventors: Yevgen Kalynushkin, Elena Shembel, Peter Novak, Chris Flury