Abstract: Method of treating a surface of a steam line plug grip wherein the surface is subjected to chemical vapor deposition (CVD) treatment to introduce a hard oxide material into pores and cracks in the surface.

Abstract: A method and installation for forming a coating on a substrate, wherein the substrate is contacted with a gas treatment atmosphere in order to carry out said coating. The gas treatment atmosphere includes a primary gas treatment mixture comprising excited or unstable gaseous species obtained from a device which converts an initial gas mixture into said species, and an adjacent gas treatment mixture comprising at least one gas precursor required to form said coating, whereby the adjacent mixture is not transported via said device. The adjacent gas treatment mixture is injected into the flow of the primary gas mixture when the gas exits from the device.

Abstract: In a method for processing a substrate, a plurality of substrates maintained in a boat are loaded into a cylindrical inner tube disposed in a cylindrical outer tube. A processing gas is supplied into a process room, and thereafter the substrates are batch-processed with the processing gas evacuated through an exhaust path formed between the inner tube and the outer tube, wherein nitrogen gas is supplied to a surface region of the ceiling of the outer tube during a film forming process of the substrates, thereby the processing gas ascended through the process room is prevented from coming into contact with the ceiling of the outer tube by the nitrogen gas covering thereat. Accordingly, products and/or by-products of the film forming gas is prevented from being adhered thereto, thereby formation of contaminants due to the deterioration of the deposition of the products and the by-products thereof can be eliminated/reduced.

Abstract: The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen.

Abstract: A titanium aluminide substrate (4) is vulnerable to air oxidation, limiting the use of this substrate in a variety of industrial applications, including the aircraft and aerospace industries. A bilayer reactive barrier (2) is formed on a titanium aluminide substrate. The barrier layer includes an &agr;-Al2O3 layer (6) from the reaction of oxygen from the disassociation of water with alumina in a gaseous and water vapor atmosphere at high temperatures and low oxygen concentration. During the process, titanium migrates through the &agr;-Al2O3 to a gas/barrier layer surface (14) and is oxidized to form a Ti2O3 layer (8). A surface of the Ti2O3 layer is subsequently oxidized to form a TiO2 layer (12). In this manner, a triple layer barrier is formed in which the immersible TiO2 and &agr;-Al2O3 are separated by Ti2O3. The three layers are bonded to each with a bond strength greater than 4500 kPa.

Abstract: A method for treating a metal enclosure to prevent the enclosure from being contaminated, comprises the steps of: (a) sand-blasting the enclosure; (b) preheating the enclosure to a predetermined temperature, and putting the enclosure into the space in a vacuum chamber between two electrodes; (c) introducing reactive gases into the vacuum chamber, the reactive gases including 1,1,3,3-tetramethyldisiloxane and oxygen; (d) applying high electrical power to the electrodes to cause the reactive gases to become an ionized plasma, the plasma reacting with a surface of the enclosure to form a layer of silicon oxide thereon. The layer of silicon oxide resists formation of a fingerprint when it is touched by a user.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.

Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Abstract: A method, composition and system for coating an external surface of containers and in particular, plastic containers, provides for low permeability to gases and vapors. The coating applied to the external surface of the containers is very thin and is comprised of one or several inorganic substances or layers of substances. For example, the coating can include silica which is bonded to the external surface of the container. This coating will be flexible and can be applied regardless of the container's internal pressure or lack thereof. The coating will firmly adhere to the container and possess an enhanced gas barrier effect after pressurization even when the coating is scratched, fractured, flexed and/or stretched. Moreover, this gas barrier enhancement will be substantially unaffected by filling of the container.

Abstract: A method, composition and system for coating an external surface of containers and in particular, plastic containers, provides for low permeability to gases and vapors. The coating applied to the external surface of the containers is very thin and is comprised of one or several inorganic substances or layers of substances. For example, the coating can include silica which is bonded to the external surface of the container. This coating will be flexible and can be applied regardless of the container's internal pressure or lack thereof. The coating will firmly adhere to the container and possess an enhanced gas barrier effect after pressurization even when the coating is scratched, fractured, flexed and/or stretched. Moreover, this gas barrier enhancement will be substantially unaffected by filling of the container.

Abstract: A method of forming a layer of oxide or oxynitride upon a substrate including first placing a substrate having an upper surface and a lower surface in a high vacuum chamber and then exposing the upper surface to a beam of atoms or molecules, or both, of oxygen or nitrogen or a combination of same at a temperature sufficient to form a reacted layer on the upper surface of said substrate wherein said layer has a chemical composition different from the chemical composition of said substrate. The reacted upper layer is then exposed simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or metal molecules selected from the group consisting of Al, Si, Zr, La, Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer in said layer.

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

Abstract: The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the oxide superconductor on a substrate. The lower thin film is deposited by a molecular beam deposition process and the upper thin film is deposited by a process having a deposition rate faster than that of the molecular beam deposition process.

Abstract: A method of reducing plasma-induced damage in a substrate, comprising providing a post-deposition ramp down of a plasma source power used in generating a plasma for substrate processing.

Abstract: An amorphous carbon film, preferably disposed on and substantially filling the pores in a porous anodized aluminum outer surface, wherein the amorphous carbon film comprises as an integral component an effective amount of a lubricity-increasing agent, preferably sulfur.

Abstract: An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.

Abstract: The process comprises the following steps: a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface; b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; and c) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).

Abstract: A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal into a chamber in which the substrate is disposed; (b) injecting a stream of reactive gas into the chamber to impinge upon the stream of metal vapor clusters and exothermically react therewith to produce substantially nanometer-sized metal compound or ceramic clusters; (c) operating heat treatment devices to heat treat the metal compound or ceramic clusters so that a non-zero proportion of the clusters is in a solid state when impinging upon the substrate; and (d) directing the metal compound or ceramic clusters to impinge and deposit onto the substrate for forming the nano-porous coating.

Abstract: A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.

Abstract: In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (SinH2n+2 (n=1, 2, 3, . . . )) is used as the process gas.

Abstract: A substrate is prepared for thin film metallization by applying one or more substantially conformal films or layers of a silicon glass onto the surface of the substrate. The total thickness of the glass on the substrate is not more than approximately 12,000 to 15,000 Angstroms and preferably between about 4000 and 6000 Angstroms. The glass is preferably deposited substantially uniformly onto the substrate surface so that the topographical features of the underlying substrate are not significantly changed by the presence of the glass.

Abstract: In a film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma generation chamber to the deposition chamber and caused to react with a process gas to form a silicon oxide film. The deposition apparatus has a host controller for dictating a pattern of control of the process gas flow to an MFC provided in a feed part for feeding the process gas into the deposition chamber. The host controller gives the MFC instructions for executing control to, in a first half side time constituting not more than half of the whole film deposition time, first make zero or limit and then gradually increase the process gas flow. The process gas flow in the first half side time can also be limited so that the thickness of film deposited in the first half side time is not greater than 10% of the overall thickness of the silicon oxide film. A silicon-hydrogen compound (SinH2n+2(n=1,2,3, . . . )) is used as the process gas.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: This invention discloses methods for the deposition of SiO2 and other oxide dielectric materials using a near room temperature thermal chemical vapor deposition process. The films have chemical, physical, optical, and electrical properties similar to or better than those of oxide films deposited using conventional, high temperature thermal CVD methods. The films of the invention are useful in the manufacture of semiconductor devices of sub-micron feature size and for food packaging.

Abstract: A method is used by a semiconductor processing tool. The method comprises forming a first layer above a substrate layer, and forming an inorganic bottom antireflective coating layer above the first layer by introducing at least two gases at a preselected ratio into the semiconductor processing tools. A signal indicating that the semiconductor processing tool has been serviced is received, and the ratio of the gases is varied in response to receiving the signal to control optical parameters of the bottom antireflective coating layer to enhance subsequent photolithographic processes.

Abstract: The present invention relates to a method for carrying out a magnesium oxide based deposition on the dielectric surface of a glass plate of a display panel. The method includes the creation of a mist from a metalorganic compound of magnesium dissolved in a solvent, the conveying of the mist to the dielectric surface of the plate, the evaporation the solvent when approaching the dielectric surface of the plate which is taken to a temperature of about 380° to 430°, and the pyrolysis of the metalorganic compound leading to the magnesium oxide based deposit on the surface of the plate and the evaporation of the organic radical of the compound, this deposit being practically waterproof. The method is especially useful in the manufacture of plasma panels.

Abstract: The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Abstract: The described device is introduced into a plastic container with a narrow opening and serves a plasma enhanced process for treating the inside surface of the container. The device (2) extends between the container opening and the container bottom along the container axis (X) and comprising a gas feed tube (23) for feeding a process gas into the container and permanent magnets (24) for establishing a stationary magnetic field inside the container. The magnets (24) form a column of superimposed magnets which is arranged inside the gas feed tube (23). The north and south poles of each magnet are positioned on opposite sides of the container axis (X). The device may also comprise cooling means (25) for cooling the gas feed tube and the magnets.

Abstract: A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

Abstract: The present invention provides a system and method for depositing materials onto a substrate and preferably includes physical vapor deposition (PVD) and chemical vapor deposition (CVD) processing. In one aspect, a system is provided that deposits a stack of layers on a substrate comprising one or more nucleation layers, one or more conductive layers compatible with a high-dielectric-constant (HDC) material and one or more HDC layers in various sequences. The HDC material is useful in depositing thin metal-oxide films and ferroelectric films, as well as other films requiring vaporization of precursor liquids. The system allows PVD and CVD to occur within a centralized system to avoid contamination and reduce processing time. Further, different CVD layers can be deposited within the same CVD chamber.

Abstract: An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Abstract: A method of fabricating polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal sulfides or selenides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands and H2Z (Z=S, Se) as precursors. The present invention also discloses a method of fabricating metal oxide polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal oxides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands as one of precursors. Main object of the present invention is to provide a method of fabricating high quality EL device using the above technique.

Abstract: A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or Al2 O3 can be used.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where chemical precursors are added and the devices are further heated to a predefined temperature associated with the chemical precursors by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: The present invention relates to a surface treatment for hydrogen-absorbing alloy. More particularly, the present invention relates to a surface treatment for hydrogen-absorbing alloy by which the poisoning resistance of a surface of alloy powder with respect to oxide film, water or absorbing gas can be enhanced so that activation treatment can be easily conducted on alloy powder. In the method, the poisoning resistance is enhanced by forming a protective film, which contains at least one of sulfide and fluoride, on the surface of hydrogen-absorbing alloy powder in an atmosphere containing SF6 gas when hydrogen-absorbing alloy is crushed or hydrogen-absorbing alloy is in a state of powder or when hydrogen-absorbing alloy is made into powder by rapidly cooling and solidifying.

Abstract: A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.

Abstract: A CVD apparatus for depositing a copper interconnect film on a substrate is equipped with a first CVD module 15 which deposits a copper film as a foundation using a Cu(hfac)(tmvs)-based precursor material having a small film deposition rate, and a second CVD module 16 which performs film deposition to increase the thickness of the copper film using a Cu(hfac)(atms)-based precursor material having a large film deposition rate. The film deposition rate of the Cu(hfac)(tmvs)-based precursor material is about 100 nm per minute and the film deposition rate of the Cu(hfac)(atms)-based precursor material is about 400 nm per minute. This realizes a practical CVD apparatus for mass production which achieves both a high film deposition efficiency and high film quality.

Abstract: The present invention provides a gas introduction pipe in which the least component is replaced when deformation or damage is caused and a magnetic recording medium production method using this gas introduction pipe. The gas introduction pipe according to the present invention includes: a gas supply pipe 20 for supplying a gas; a main body 22, 23 connected to the gas supply pipe and having a gas flow passage 21 for flowing of a gas supplied from the gas supply pipe; and a blowoff block 25 arranged at the opposite side of the main body 22, 23 not having the gas supply pipe and having a blowoff opening 27 exposed outward for blowing off the gas outside. The blowoff block 25 is held so as to be sandwiched by the main body 22, 23 and can be detached and attached from/to the main body 22, 23.

Abstract: A method of coating an amorphous silicon layer. An amorphous silicon layer is directly deposited on the polysilicon nodes by a self-aligned method. A chemical mechanical polishing process is performed to control the thickness of the amorphous silicon layer. No additional photoresist is used during the whole processes. Therefore, the duration for deposition can be reduced and the quality of the amorphous silicon film is improved.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A method for coating a component with a thermal barrier coating, includes placing the component in a coating chamber and maintaining the component at a component temperature. A vacuum is established in the coating chamber. The process parameters vacuum pressure and component temperature are controlled together, at least during the coating process with a deposition of material forming the thermal barrier coating. The control takes place in such a way that the parameters are in a respective set-point value range and the thermal barrier coating grows with a columnar structure on the component. A coating device is also provided.

Abstract: A method for manufacturing a thin-film solar cell substrate of group IB, IIIB and VIB elements of the Periodic Table, by using an apparatus for depositing selenium (Se) on the thin-film solar cell substrate. The apparatus has a base with gas inlet and outlet pipes. A bell jar is placed on top of the base with an O-ring interposed between them. A thin-film solar cell precursor and Se powder are placed in a recess formed in a lower heating jig, and the lower heating jig is positioned on the base. An upper heating jig is placed on top of the lower heating jig. The upper heating jig is vertically moved by a vertically actuating mechanism. The upper and lower heating jigs are heated under vacuum so as to diffuse Se to the thin-film solar cells, whereby a CuInSe2 alloy film is formed.

Abstract: An apparatus is used to turn liquids into vapors for use in chemical vapor deposition. It uses a high-frequency ultrasonic plate to break the liquid into tiny droplets and a gas-dynamic sorting tower to reprocess larger droplets into smaller ones before quickly vaporizing them. The method can vaporize liquids with high efficiency even if they have low vapor pressures and limited thermal stability. The vapor concentration can be set to a known and reproducible value by setting the pumping rate. The apparatus can rapidly start and stop the vapor flow. The pressure drop in the carrier gas is very small. Only a very small dead volume of liquid is contained in the apparatus at any given time, so little is wasted when the system is cleaned.

Abstract: An SiOF layer is formed by using as raw material an organic Si compound having Si—F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organic Si compound has Si—F bonds, low in bond energy, and is thus capable of easily getting only Si—F bonds separated, the SiOF layer is prevented from getting contaminated by reaction by-products and fluorine can be introduced into the SiOF layer in stable fashion. Therefore, an insulator layer, low in dielectric constant, low in hygroscopicity and excellent in step coverage, can be formed by using a low powered apparatus.