Abstract: The present invention relates to ceramic cutting tools, such as, an aluminum oxide with zirconium oxide ceramic cutting tool with diffusion bonding enhanced layer and CVD coatings, particularly useful for machining modern metal materials. The method comprises a chemical reaction with a mixture including nitrogen and aluminum chloride introduced to form a diffusion bonding enhanced layer between the ceramic substrate and the CVD coatings. Thus formed diffusion bonding enhanced layer is highly adherent to the aluminum oxide with zirconium oxide ceramic substrate and significantly enhances the CVD coating properties, thus improving the machining performance in terms of the tool life of zirconium-based aluminum oxide with zirconium oxide ceramic cutting tools.

Abstract: A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

Abstract: A refined method to produce textured ?-Al2O3 layers in a temperature range of 750-1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer is formed on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminum content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step composed of short pulses and purges of Ti-containing and oxidizing steps. The ?-Al2O3 layer has a thickness ranging from 1 to 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from 2 to 15, preferably 6 to 10. The layer is characterized by a strong (110) growth texture, measured using XRD, and by the low intensity of (012), (104), (113), (024) and (116) diffraction peaks.

Abstract: A method is defined for producing an iron oxide coating on a glass article. The article is preferably for use as an architectural glazing. The method includes providing a heated glass substrate having a surface on which the coating is to be deposited. Ferrocene and an oxidant are directed toward and along the surface to be coated, and the ferrocene and the oxidant are reacted at or near the surface of the glass substrate to form an iron oxide coating.

Abstract: A method of performing a CVD process on target substrates all together in a vertical CVD apparatus includes repeating, a plurality of times, first and second steps of supplying first and second reactive gases, respectively. The first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less. The second reactive gas has a vapor pressure of 2.66 kPa or more, and a bond-dissociation energy of 250 kJ/mol or more. The first reactive gas is supplied from a first delivery hole disposed at a bottom of the process chamber. The second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates entirely over a vertical length of the target substrates stacked at intervals.

Abstract: Methods of depositing a single or mixed metal oxide layer or film are described herein. The methods use a rare earth metal precursor are described herein. The rare earth metal precursors have a general formula M[OCR1(R2)(CH2)X]3, wherein M is a rare earth metal, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR, wherein R is an alkyl group or a substituted alkyl group.

Abstract: There is provided a method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. The method may include heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) or other type of carbon, with an oxygen barrier layer provided thereon directly or indirectly. Optionally, a release layer of a material such as zinc oxide or the like may be provided between the oxygen barrier layer and the DLC. In certain example embodiments, the oxygen content of at least part of the protective film when deposited may be determined based on whether the coated surface is to be bent in a convex manner, to be bent in a concave manner, or to remain flat. Following heat treatment, which may include bending the coated surface into a convex or concave shape, and quenching, the protective film may be removed by washing or the like.

Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

Abstract: A modified atomic plasma deposition (APD) procedure is used to produce amorphous, nonconformal thin metal film coatings on a variety of substrates. The films are porous, mesh-like lattices with imperfections such as pinholes and pores, which are useful as scaffolds for cell attachment, controlled release of bioactive agents and protective coatings.

Abstract: In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate.

Abstract: In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M?1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N?1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract: A method of making a coated article includes forming a layer including carbon on a glass substrate; and forming a layer (e.g., including tungsten disulfide) on the glass substrate over the carbon to prevent the layer comprising carbon from burning off upon exposure to air if taken to high temperatures. In certain embodiments, the amorphous carbon layer includes at least about 35% sp3 carbon-carbon bonds, more preferably at least about 70%, and most preferably at least about 80% of the sp3 carbon-carbon bonds.

Abstract: A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Abstract: A method for manufacturing a protective layer such that when the protective layer is formed in a film-forming chamber, the partial pressure of water in the film-forming chamber is controlled by the exhaust velocity of the water in the film-forming chamber. During formation of the protective layer the total pressure in the film-forming chamber is kept constant. In addition, the partial pressure of the water in the film-forming chamber is controlled while introducing a gas into the film-forming chamber, thereby controlling the ratio of the partial pressure of hydrogen to the partial pressure of oxygen in the film-forming chamber.

Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film thereon. In certain example embodiments, the protective film may be of or include an oxide of zinc. Following and/or during heat treatment (e.g., thermal tempering, or the like) the protective film may be removed. Other embodiments of this invention relate to the pre-HT coated article, or the post-HT coated article.

Abstract: The invention provides improved conditions for atmospheric pressure chemical vapour deposition (APCVD) of vanadium (IV) oxide. Specifically, higher quality vanadium oxide (particularly in the form of films) can be obtained by employing concentrations of precursors in the APCVD reaction which are substantially less than those used previously. These conditions improve the reproducibility of the films obtained by APCVD and also prevent particulate formation in the manufacturing apparatus, which in previous work had caused blockages. The films obtained have improved visual appearance, especially colour, and/or have improved adhesion to a substrate. The obtained films also show a greater difference in transmission above and below the switching temperature than previous films. The invention also provides doped vanadium oxide, particularly with tungsten. Substrates (e.g. glass substrates) coated with a film of vanadium oxide are also provided.

Abstract: Certain embodiments are unique coatings. Other embodiments include apparatuses, articles, and components including such coatings and, systems and methods for providing such coatings. Further embodiments, forms, objects, features, advantages, aspects, and benefits shall become apparent from the following description and drawings.

Abstract: Ruthenium containing precursors for ruthenium containing films deposition comprising a ruthenium precursor selected from the group essentially consisting of Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2X2Ru(diketonate)2(amidinate)2, their derivatives, and any mixture thereof.

Abstract: Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: A method for fabricating a photonic crystal structure is disclosed herein for forming a cavity-type or a pillar type photonic crystal structure of a large area. By the property that a hetero-interface inhibits epitaxial growth, a patterned film layer is formed over the epitaxy substrate, so a photonic crystal structure is grown vertically by epitaxy in area outside of the patterned film layer on the epitaxy substrate. Furthermore, by designing the pattern of the patterned film, a defect mode photonic crystal structure such as an optical waveguide, an optical resonator and a beam splitter can be formed.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: The present invention is directed to high coordination sphere Group 2 metal ?-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

Abstract: Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy. Means of Solution H2 gas and O2 gas or, H2O2 gas, is introduced into a catalytic reactor to make contact with a catalyst to generate H2O gas, and the H2O gas is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit a metal oxide thin film on a substrate and fabricate the metal oxide thin film.

Abstract: The present invention provides a method and apparatus for forming a zinc oxide thin film with high transparency and high conductivity on a surface of a flexible substrate such as plastic without the indispensable requirement of doping impurities. In the method of forming a zinc oxide thin film by reacting oxygen radicals and zinc atoms on a surface of a substrate placed in a film-forming chamber evacuated to a vacuum, the density of crystal defects that are defects of the atomic arrangement of the zinc oxide thin film is controlled by the temperature of the substrate, and the zinc oxide thin film is thereby formed. It is suitable to form the film while maintaining the temperature of the substrate at 400° C. or less to intentionally disturb the regularity of the atomic arrangement of the zinc oxide thin film.

Abstract: The invention relates to a structure, comprising a substrate supporting a layer with a photocatalytic and anti-soiling property on at least part of the surface thereof, said layer being based on titanium dioxide (TiO2) which is at least partially crystallized in the anatase form thereof. Said structure is characterised in comprising a sublayer (SC) directly under at least one TiO2 layer, said sublayer having a crystallographic structure which provides assistance to crystallization by heteroepitaxial growth in the anatase form of the TiO2-based upper layer, the photocatalytic property being obtained without any heating step.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A coated article includes a substrate and a first coating formed over at least a portion of the substrate. The first coating includes a mixture of oxides including oxides of at least two of P, Si, Ti, Al and Zr. A conductive functional coating is formed over at least a portion of the first coating. In one embodiment, the functional coating includes fluorine doped tin oxide.

Abstract: Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials.

Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Abstract: A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium aluminum oxide may be formed in an atomic layer deposition process that includes pulsing a zirconium-containing precursor onto a substrate and pulsing an aluminum-containing precursor.

Abstract: A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract: A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.

Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.

Abstract: A method of making an oven door, or other coated article, is provided so as to have a color suppression coating on a substrate such as a glass substrate. Flame pyrolysis (or combustion CVD) is used in depositing at least part of a color suppression coating. For example, in an example embodiment of this invention, flame pyrolysis can be used to deposit a single SnO2 layer from suitable Sn inclusive precursor(s), or alternatively a multi-layer coating may be formed at least partially using flame pyrolysis. In another example embodiment, the coating may include a base layer of silicon oxide formed using flame pyrolysis, and another layer of tin oxide formed in any suitable manner over the base layer of silicon oxide.

Abstract: A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N?(R,R?) (in the formula, R and R? may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R?)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R?) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film

Abstract: The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

Abstract: The present invention is a low pressure physical vapor deposition method for the deposition of multi element sulfide thin film phosphor compositions for electroluminescent devices where a thermal source comprising a polysulfide compound provides the source of sulfur species for phosphor film deposition and/or annealing. The method is particularly useful for the deposition of phosphors for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

Abstract: A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 ?m.

Abstract: A system and method for vaporizing a solid film precursor and transporting the film precursor vapor using a precursor valve system to control delivery. The film precursor vaporization system is positioned above and coupled to the process chamber. The precursor valve system, coupled to the film precursor vaporization system, is utilized to open and close the flow of film precursor vapor from the film precursor vaporization system to the process chamber.

Abstract: A method is provided for applying a coating over a substrate surface of an engine component. The method includes inserting the engine component within a deposition chamber, heating the deposition chamber to a temperature between 325° C. and 500° C., supplying one or more precursors to the heated deposition chamber, subjecting the engine component to the one or more precursors for about five hours to form an inert oxide layer over the substrate surface of the engine component having a thickness of approximately 1-5 microns.

Abstract: There is provided a tool at least partly coated with at least two refractory layers of which one of the said layers is a fine-grained ?-Al2O3-layer which is the top layer along the cutting edge-line and the other a TiCxNyOz- or a ZrCxNy-layer being the top layer on the clearance face. The coated tool exhibits excellent flank and crater wear and high resistance to flaking, particularly when used for machining of low carbon steel and stainless steel. Used cutting edges can easily be identified by the naked eye.