Abstract: The invention provides a method for producing a polymeric photoinitiator of the general formula I: Polymer-[CR2-CHR-Spacer (PI)n]m, (I) wherein m is an integer from 1-5000; n is a real number above 0 and below 5; each R group, independently, is a substituent independently selected from hydrogen, C1-C25 linear alkyl, C3-C25 branched alkyl, C3-C25 cycloalkyl, aryl, heteroaryl, —OH, —CN, halogens and amines and PI is a photoinitiator moiety. The method comprises grafting one or more photoinitiator moieties (PI), each of which comprises at least one activated alkene functional group, onto the polymer. Polymeric photoinitiators are also provided.

Abstract: Irradiation with ultraviolet (UV) light during atomic layer deposition (ALD) can be used to cleave unwanted bonds on the layer being formed (e.g., trapped precursor ligands or process-gas molecules). Alternatively, the UV irradiation can be used to excite the targeted bonds so they may be more easily cleaved by other means. The use of UV may enable the formation of low-defect-density films at lower deposition temperatures (e.g., <250 C), or reduce the need for a high-temperature post-deposition anneal, improving the quality of devices formed on heat-sensitive materials such as germanium.

Abstract: The present disclosure describes articles, such as medical articles, containing a substrate having disposed thereon a hydrophilic gel material (e.g., a shaped hydrophilic gel material or a coating of a hydrophilic gel material) and methods for making such articles. Methods are provided for making hydrophilic gel materials from a precursor composition that contains a polar solvent and a polymerizable material that is miscible with the polar solvent.

Abstract: Disclosed herein is a method for producing a plastic container coated with a thin film that is excellent in gas barrier properties, film coloration and film adhesiveness without using an external electrode having a special shape while suppressing deposition of foreign matters such as carbon powders.

Abstract: A multilayer encapsulation thin-film and a method and apparatus for preparing a multilayer encapsulation thin-film are provided. The multilayer encapsulation thin-film includes an inorganic thin film that includes a metal oxide, and an organic thin film that includes a polymer and is formed on the inorganic thin film, where the inorganic thin film and the organic thin film are alternately stacked in multiple layers.

Abstract: An isothermal, low pressure-based process of depositing material within a substrate has been developed and results in creating an extremely narrow reaction zone within which a more uniform and efficient deposition will occur. Sets of isothermal plasma operating conditions have been found that create a narrow deposition zone, assuring that the deposited material is clear glass rather than soot particles. The chemical delivery system, in one arrangement, utilizes rods of solid phase source material (which may otherwise be difficult to obtain in gaseous form). The operating conditions are selected such that the hot plasma does not transfer a substantial amount of heat to the substrate tube, where the presence of such heat has been found to result in vaporizing the reactant material (creating soot) and developing hot spots.

Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.

Abstract: Disclosed are simple, efficient, and scalable methods of patterning polymeric or metallic microstructures on planar or non-planar surfaces. The methods utilize initiated chemical vapor deposition (iCVD) technology. Also disclosed are patterned articles produced by these methods, and methods of using the articles.

Abstract: There is provided a gas barrier film which has high barrier performance and is excellent in bending resistance and smoothness as well as cutting processing suitability; a method for producing the gas barrier film; and an electronic device in which the gas barrier film is used. A gas barrier film, comprising a gas barrier layer unit on at least one surface side of a base, wherein the gas barrier layer unit comprises a first barrier layer formed by a chemical vapor deposition method, a second barrier layer obtained by performing conversion treatment to a coating film formed by coating a silicon compound onto the first barrier layer and an intermediate layer between the first barrier layer and the base.

Abstract: A method for flattening a surface of a substrate in which a film formation surface has a recess and a convex and a method for forming a protective film by using a photo-curable organic thin film material are provided. A gas of an organic thin film material having photocurability is liquefied on the surface of a substrate having the recess and the convex and a liquid organic layer is grown on the surface of the substrate (first liquid layer growing step T1); and the growth is terminated when a liquid organic layer having a flat surface is formed (first growth termination step T2).

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

Abstract: The invention relates to a method for the coating of a surface of a ceramic basic body with a titanium compound, comprising the steps of (i) providing a preformed ceramic material; (ii) at least one step of surface activation of said ceramic material using a plasma for plasma-chemical surface preparation wherein the plasma comprises high-energy ions; (iii) at least one step of applying a titanium compound bonding layer to said ceramic material by plasma-supported coating wherein the plasma-supported coating is performed in pulsed and/or non-pulsed fashion; (iv) at least one step of applying a functional titanium compound layer by pulsed plasma-supported coating. The invention also relates to novel compositions as well as uses of the novel compositions.

Abstract: A deposition source for depositing a deposition material on a substrate, the deposition source including: a nozzle disposed to face the substrate and discharge the deposition material toward the substrate; and a hardening portion disposed to at least one side of the nozzle for immediately hardening the deposition material discharged via the nozzle when the deposition material reaches the substrate. The deposition source being part of a deposition apparatus for manufacturing an organic light-emitting display having improved characteristics of a deposited film and encapsulation characteristics.

Abstract: Method and equipment to produce nanopowders of materials based on pure metals, their alloys and chemical compounds of these metals with elements taken from the row of B, C, O and Si, encapsulated into a salt shell selected from the group of NaCl, NaF, LiCl, and LiF or their mixtures, includes independent evaporation by means of electron beam and/or laser radiation sources of the material and alkali metal(s) halogenide and simultaneous deposition of a mixture of their vapor phases on a substrate in a closed pumped-down volume. To achieve the required ratio of vapor flows, a screen with variable cross-section diaphragms is placed between the substrate movable in parallel to the evaporators, and the evaporators, thus allowing an independent regulation of the intensity of the vapor flow coming to the substrate from each of the evaporators.

Abstract: Disclosed is a method for producing a polymer-based microfluidic device, including: forming a microstructure on a lower polymer matrix; coating the lower polymer matrix with TiO2 to perform patterning of TiO2; bonding the lower polymer matrix with an upper polymer matrix; and radiating UV lights thereto to convert TiO2-coated regions into hydrophilic regions. Disclosed also is a polymer-based microfluidic device obtained by the method. The method enables development of a microfluidic device having high stability and long-term durability.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.

Abstract: Multifunctional reactive polymers created by chemical vapor deposition (CVD) and methods of making such polymeric systems are provided. Such polymers provide multifunctional surfaces which can present two or more different molecules (e.g. biological ligands) in controlled ratios. Polymers may include compositional gradients allowing attached ligands to be presented as continuous gradients across a surface. The polymer compositions are modularly designable and applicable to a wider range of applications, including biomedical devices and diagnostic systems.

Abstract: System and methods are disclosed in connection with a reaction at or below the surface of a work object, in the context of a fluid flow fostering the reaction. In some example embodiments, the reaction is fostered by (1) creating fluid flow of an inerting fluid over a surface during exposure of the surface to a predetermined type of light, (2) creating fluid flow comprising a reactive species that reacts with another species at or below the work surface in a predetermined manner and/or (3) creating a fluid flow comprising a catalytic species that catalyzes a reaction in a predetermined manner, e.g., during exposure of the surface to a predetermined type of light. In some example embodiments, a light source is employed that comprises a solid-state light source, e.g., a dense array of solid-state light sources. In at least one of such example embodiments, the reaction is a photoreaction associated with the light source.

Abstract: A cured organopolysiloxane resin film having gas barrier properties comprising a fiber-reinforced film made of a hydrosilylation-cured organopolysiloxane resin and having a transparent inorganic layer selected from silicon oxynitride layer, silicon nitride layer, and silicon oxide layer formed on the fiber-reinforced film wherein a layer of cured organopolysiloxane that contains an organic functional group, silanol group, hydrosilyl group, or an organic group produced by the polymerization of polymerizable organic functional groups is interposed between said fiber-reinforced film and inorganic layer. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.

Abstract: A hydrophilic expanded fluoropolymer membrane having a coating comprising a copolymer comprising a non-wetting monomer and a fluoromonomer is described. In one embodiment, the non-wetting monomer and fluoromonomer are cross linked. A process of vaporizing, condensing and curing a formulation or formulations comprising the non-wetting monomer and/or the fluoromonomer is described. In one embodiment the condensed formulation is exposed to a high energy source such as a UV lamp for example to cross link the non-wetting monomer with the fluoromonomer. The coating may be conformable coating and may provide a hydrophilic membrane that has high water flow rates.

Abstract: A method for fabricating an ultra low dielectric constant material is disclosed. The method includes placing a substrate into a deposition reactor. A first precursor is flowed into the deposition reactor. The first precursor is a matrix precursor. A second precursor is flowed into the deposition reactor. The second precursor is a porogen precursor. A preliminary film is deposited onto the substrate based on the first and second precursors. The preliminary film includes Si, C, O, and H atoms. A first ultraviolet curing step is performed on the substrate including the preliminary film at a first temperature. At least a second ultraviolet curing step is performed on the substrate including the preliminary film at a second temperature.

Abstract: According to a method for forming a UV patternable conductive polymer film, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer, and a UV-curable polymer resin may be used as a binder to form a conductive polymer film, the method including coating a mixed solution of a binder and an oxidant on a transparent substrate, synthesizing a conductive polymer by vapor-phase polymerization (VPP) on the coating to form a conductive polymer film and patterning the conductive polymer film with UV light. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs.

Abstract: An isothermal, low pressure-based process of depositing material within a substrate has been developed, and is particularly useful in forming an optical fiber preform results in creating an extremely narrow reaction zone within which a more uniform and efficient deposition will occur. Sets of isothermal plasma operating conditions have been found that create a narrow deposition zone, assuring that the deposited material is clear glass rather than soot particles. The exhaust end of the tube is connected to a vacuum system which is in turn connected to a scrubber apparatus for removal and neutralization of reaction by-products. The operating conditions are selected such that the hot plasma does not transfer a substantial amount of heat to the substrate tube, where the presence of such heat has been found to result in vaporizing the reactant material (creating soot) and developing hot spots.

Abstract: In order to limit the negative effect of metal contamination on reflectivity within an EUV lithography device, a reflective optical element is proposed for the extreme ultraviolet and soft X-ray wavelength range with a reflective surface with an uppermost layer, in which the uppermost layer comprises one or more organic silicon compounds with a carbon-silicon and/or silicon-oxygen bond.

Abstract: A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Cascaded ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. Successive UV radiation of equal or shorter wavelengths with variable intensity and duration selectively breaks bonds in the Si—N matrix and minimizes shrinkage and film relaxation. Higher tensile stress than a non-cascaded approach may be obtained.

Abstract: The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.

Abstract: Methods for supplying one or more vapors, under reduced pressure, to an environment are provided. The vapor may comprise at least one polymerizable component. In some cases, at least two components may be combined to form the vapor. The components may be provided as separate vapor streams, which may be combined and homogenized. Methods of the invention may also be useful in the deposition of materials on the surface of a substrate. In some cases, the material may form a layer, such as a polymer layer, on the surface of a substrate. The present invention may be useful in applications that require the formation of homogeneous films on the surface of a substrate.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.

Abstract: An ultra low dielectric constant material is disclosed. The ultra-low dielectric constant material comprises a three dimensional random network porous dielectric comprising atoms of Si, C, O, and H. The ultra-low dielectric constant material also comprises a dielectric constant of not more than 2.6. The ultra-low dielectric constant material further comprises a carbon concentration of at least 15% and a content of carbon that is bonded as —CH2-groups, wherein a concentration of carbon is greater than a concentration of carbon in an ultra low dielectric constant material formed by using a single step ultra-violet curing process.

Abstract: A decorating method includes the steps of coating a base material with a coating composition comprising 45-95 parts of urethane methacrylate, 1-50 parts of a compound having at least an intra-molecular radical polymeric double bond, and 0.1-15 parts of photopolymerization initiator. The coating is hardened to form an under coat. Vacuum deposition of indium and/or tin in a crystalline structure-independent way is performed to form a non-conductive thin film. Then, a UV-hardening resin, poly acrylic-urethane resin, or acrylate-silica resin is applied, which is hardened to form a hard coat layer.

Abstract: Methods for depositing a low dielectric constant layer on a substrate are provided. In one embodiment, the method includes introducing one or more organosilicon compounds into a chamber, wherein the one or more organosilicon compounds comprise a silicon atom and a porogen component bonded to the silicon atom, reacting the one or more organosilicon compounds in the presence of RF power to deposit a low dielectric constant layer on a substrate in the chamber, and post-treating the low dielectric constant layer to substantially remove the porogen component from the low dielectric constant layer. Optionally, an inert carrier gas, an oxidizing gas, or both may be introduced into the processing chamber with the one or more organosilicon compounds. The post-treatment process may be an ultraviolet radiation cure of the deposited material. The UV cure process may be used concurrently or serially with a thermal or e-beam curing process.

Abstract: The present invention is related to a method for the production of metal coated steel products including steps of: providing a steel product with a metal coating; adding an additional metallic element to the metal coating; subjecting the metal coated steel product to a thermal treatment. The method is characterized in that: prior to the addition of the additional element, the steel product is subjected to a plasma treatment via a dielectric barrier discharge, for cleaning and activating the surface of the metal coating; the additional element is added through a physical vapor deposition technique; the thermal treatment is applied by directing high energy infra red radiation towards the outer surface of the metal coating.

Abstract: A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation.

Abstract: A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.

Abstract: A plastic housing comprises a transparent exterior coating, a metallic coating and a substrate. The exterior coating has a first surface and a second surface. A partial of the first surface of the exterior coating is defined a plurality of groove groups thereon. The metallic coating is formed on the second surface of the exterior coating. The substrate is bonded with the metallic coating. A method for making the plastic housing is also described there.

Abstract: Disclosed herein are a protein chip substrate and a method for manufacturing the protein chip substrate. The method includes deposition of plasma polymerized ethylenediamine (PPEDA) having an amine group on plasma polymerized cyclohexnane (PPCHex) by inductively coupled plasma-chemical vapor deposition (ICP-CVD), thereby preventing non-specific adsorption of proteins on a slide surface.

Abstract: Nanoscale particles, particle coatings/particle arrays and corresponding consolidated materials are described based on an ability to vary the composition involving a wide range of metal and/or metalloid elements and corresponding compositions. In particular, metalloid oxides and metal-metalloid compositions are described in the form of improved nanoscale particles and coatings formed from the nanoscale particles. Compositions comprising rare earth metals and dopants/additives with rare earth metals are described. Complex compositions with a range of host compositions and dopants/additives can be formed using the approaches described herein. The particle coating can take the form of particle arrays that range from collections of disbursable primary particles to fused networks of primary particles forming channels that reflect the nanoscale of the primary particles. Suitable materials for optical applications are described along with some optical devices of interest.

Abstract: To provide a method of making a film of organic material excellent in moisture barrier property and/or oxygen barrier property and also to provide an electronic device excellent in long term stability, in which the film obtained by such film making method is utilized to form a protective film for protecting an electronic device, and particularly an organic electronic device, to avoid deterioration of the performance, which would otherwise be brought about by moisture and oxygen in the atmosphere. The film is formed by depositing and solidifying, on a substrate, an evaporant formed by irradiating a liquid crystal polymer capable of exhibiting an optical anisotropy with pulsed laser.

Abstract: A barrier film for packaging food or beverage comprises a polymer base film, and a barrier layer comprising an inorganic oxide applied onto the base film by vapour deposition. The inorganic oxide layer is further coated with a healing layer of a crosslinked organopolysiloxane which is covalently bound to the inorganic layer. Other aspects disclosed here involve a multilayer packaging laminate comprised of the barrier film, and a method of manufacturing the barrier film and packaging containers manufactured from the film.

Abstract: A process for filling or lining the pores of a porous silicon, silica or alumina substrate with a material which exhibits voltage-dependent index of refraction n is provided comprising providing precursors for the deposited material as a precursor solution, forming a fine mist of droplets of precursor solution and applying the droplets to the porous substrate. The invention provides for the first time porous silicon, silica and alumina substrates having a fill fraction of at least 60%. Fill fractions of close to l00% can be achieved. When provided with top and bottom electrodes, filled porous silicon, silica and alumina wafers can be used as voltage-dependent photonic devices. The same process can be used for lining trenches in the surface of a silicon substrate, for instance for use in production of microelectronic devices such as random access memories.

Abstract: System and methods are disclosed in connection with a reaction at or below the surface of a work object, in the context of a fluid flow fostering the reaction. In some example embodiments, the reaction is fostered by (1) creating fluid flow of an inerting fluid over a surface during exposure of the surface to a predetermined type of light, (2) creating fluid flow comprising a reactive species that reacts with another species at or below the work surface in a predetermined manner and/or (3) creating a fluid flow comprising a catalytic species that catalyzes a reaction in a predetermined manner, e.g., during exposure of the surface to a predetermined type of light. In some example embodiments, a light source is employed that comprises a solid-state light source, e.g., a dense array of solid-state light sources. In at least one of such example embodiments, the reaction is a photoreaction associated with the light source.

Abstract: A method of preparing a porous SiCOH-containing low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

Abstract: A process is described for modifying polymeric surfaces. The process is particularly useful for modification of polyesters, and can be used to impart surface functionality that confers antimicrobial, anti-soiling, or other desirable properties to the polymer. The process comprises the steps of exposing a polymeric substrate to deep UV irradiation, followed by reaction with a grafting agent. In preferred embodiments, a vapor-phase grafting agent undergoes covalent reactions with the UV-modified polymer surface to produce a polymer with improved properties.

Abstract: Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a light source which locally activates the portion of the substrate surface in contact with said radicals.

Abstract: The invention relates to a method for producing an oriented-porosity dielectric material on a substrate comprising: a) vapour phase deposition on a substrate of a composite layer, comprising a material forming a matrix and a compound comprising chemical groups capable of being oriented under the effect of an electromagnetic field and/or photonic radiation; b) the treatment of the composite layer to obtain the cross-linking of the material forming a matrix; said method also comprising a step c) consisting of subjecting said substrate coated with said composite layer to an electromagnetic field and/or a photonic radiation, said step c) being carried out simultaneously with step a), when said layer is subjected to a photonic radiation or carried out before and/or simultaneously with step b), when said layer is subjected to an electromagnetic field, given that the electromagnetic field is applied in contact with the substrate, said step c) being carried out so as to align the chemical groups mentioned in step a)

Abstract: [Summary] [Problem] To provide a conductive pattern formation method in which a fine pattern can be formed in a simple way at low cost. [Means for solving problem] A flat plate having a convex pattern on its surface is provided so as to oppose a substrate, a fluid body including conductive particles and a gas bubble generating agent is supplied into a gap between the substrate and the flat plate, and thereafter, the fluid body is heated for generating gas bubbles from the gas bubble generating agent included in the fluid body. The fluid body is forced out of the gas bubbles as the gas bubbles generated from the gas bubble generating agent grow, so as to self-assemble between the convex pattern formed on the flat plate and the substrate owing to interfacial force, and an aggregate of the conductive particles included in the fluid body having self-assembled is made into a conductive pattern formed on the substrate.

Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

Abstract: A machine (1) for depositing a thin layer of a barrier-effect material inside a container (2) by plasma-enhanced chemical vapor deposition, said machine (1) comprising: a processing unit (4) receiving the container (2) and equipped with an electromagnetic wave generator (11); a precursor gas outlet (17); an injector (13) for injecting said precursor gas into the container (2), said injector (13) having a bottom end (14) that opens out into the container (2) and an opposite top end (15); a precursor gas feed duct (20) that puts the precursor gas outlet (17) into fluid flow connection with the top end (15) of the injector (13); and a solenoid valve (25) interposed in the feed duct (20) between the precursor gas outlet (17) and the injector (13), immediately upstream from the top end (15) of the injector (13).

Abstract: Structures in the nanoscale and mesoscale domain are provided. The structures typically have a shell which can be comprised of a porous polymeric material such as parylene. The surfaces of the shell can further comprise pendant functional groups that can provide reactive or passive characteristics.