Pretreatment Of Coating Supply Or Source Outside Of Primary Deposition Zone Or Off Site Patents (Class 427/561)
  • Patent number: 6338787
    Abstract: To provide a plating method, which enables wide industrial use of the redox system electroless plating method having excellent characteristics, and a plating bath precursor which is preferable for the plating method. The plating method comprises a process oxidizing first metal ions of a redox system of a plating bath from a lower oxidation state to a high oxidation state, and second metal ions of said redox system are reduced and deposited onto the surface of an object to be plated, wherein a process is provided in which by supplying the electrical current to the plating bath, the first metal ions are reduced from said lower oxidation state to thereby activate the plating bath. The plating bath precursor is formed stabilizing the plating bath so that reduction and deposition of the second metal ions substantially do not occur in order to improve its storing performance.
    Type: Grant
    Filed: April 5, 2000
    Date of Patent: January 15, 2002
    Assignees: Daiwa Fine Chemicals Co., Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Keigo Obata, Dong-Hyun Kim, Takao Takeuchi, Seiichiro Nakao, Shinji Inazawa, Ayao Kariya, Masatoshi Majima, Shigeyoshi Nakayama
  • Patent number: 6312768
    Abstract: Powerful nanosecond-range lasers using low repetition rate pulsed laser deposition produce numerous macroscopic size particles and droplets, which embed in thin film coatings. This problem has been addressed by lowering the pulse energy, keeping the laser intensity optional for evaporation, so that significant numbers of the macroscopic particles and droplets are no longer present in the evaporated plume. The result is deposition of evaporated plume on a substrate to form thin film of very high surface quality. Preferably, the laser pulses have a repetition rate to produce a continuous flow of evaporated material at the substrate. Pulse-range is typically picosecond and femtosecond and repetition rate kilohertz to hundreds of megahertz.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: November 6, 2001
    Assignee: The Australian National University
    Inventors: Andrei Rode, Eugene Gamaly, Barry Luther-Davies
  • Patent number: 6306543
    Abstract: An electrode for electrochemical processes comprising an electrically conductive wire having a coating of a polymer having dispersed in it Magneli phase oxide particles, at least half the mass thereof being constituted by particles with diameters in the range 200 to 1000 &mgr;m. This results in a very substantial increase in conductance compared with the conventional use of particles in the approximate range 1-50 &mgr;m. To avoid breakdown of the rather fragile particles, the energy absorbed in mixing the oxide with the polymer should be restricted to at most 200J/g.
    Type: Grant
    Filed: April 27, 1999
    Date of Patent: October 23, 2001
    Assignee: Pirelli Cables (2000) Limited
    Inventor: John Reginald Vinson
  • Publication number: 20010028926
    Abstract: The invention relates to a method for the manufacture of coatings having a low coefficient of friction on articles such as mechanical components and tools, with a layer sequence of carbon and a carbide of at least one element in the form of a metal and/or silicon and/or boron being deposited on the article by means of a PVD process. Articles which have such a layer sequence are also claimed. The coating has a low coefficient of friction, is wear-resistant and has a relatively high hardness and also relatively high elasticity.
    Type: Application
    Filed: February 7, 2001
    Publication date: October 11, 2001
    Inventors: Christian G.C. Strondl, Antonius P.A. Hurkmans, Gerrit Jan van der Kolk
  • Patent number: 6287645
    Abstract: A method of forming an oriented film. A target is provided and material from the target is ablated onto a substrate to form a film. The film is heated in a synthesis gel of the target material to orient the film.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: September 11, 2001
    Assignee: Board of Regents, The University of Texas System
    Inventors: Kenneth J. Balkus, Jr., Mary E. Kinsel, Lisa L. Washmon
  • Publication number: 20010019745
    Abstract: The invention relates to a component having a substrate and a ceramic heat-insulating layer which is arranged thereon. This heat-insulating layer has a columnar structure having ceramic stems which are essentially oriented mainly normal to the surface of the substrate and have a respective stem diameter of less than 2.5 &mgr;m. The invention also relates to a coating apparatus for producing a heat-insulating layer on a substrate and to a method of coating a substrate in the manner of a reactive gas-flow sputtering method.
    Type: Application
    Filed: March 20, 2001
    Publication date: September 6, 2001
    Applicant: Siemens Aktiengesellschaft
    Inventors: Wolfram Beele, Thomas Jung, Peter-Jochen Brand
  • Patent number: 6280802
    Abstract: A method of forming a film of ultrafine particles includes the steps of accelerating ultrafine particles within a vacuum chamber to cause them to collide with a substrate and be deposited, and, at least before said ultrafine particles collide with said substrate, irradiating the ultrafine particles and the substrate with an ionic, atomic or molecular beam or low-temperature plasma or other high-speed, high-energy beam of high-energy atoms or molecules, whereby the surfaces of the ultrafine particles and substrate are activated without being fused, thus promoting bonding between said ultrafine particles and substrate or between the ultrafine particles to form a dense deposit that has good film properties and good adhesion to the substrate while maintaining the crystal properties of the ultrafine particles.
    Type: Grant
    Filed: July 26, 1999
    Date of Patent: August 28, 2001
    Assignee: Agency of Industrial Science and Technology Ministry of International Trade and Industry
    Inventors: Jun Akedo, Hideki Takagi
  • Publication number: 20010016236
    Abstract: The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.
    Type: Application
    Filed: December 8, 2000
    Publication date: August 23, 2001
    Applicant: UT-BATTELLE, LLC.
    Inventor: Zhong-Cheng HU
  • Patent number: 6276295
    Abstract: A thermal reflow system and method employing microwave energy to reduce the time required to achieve thermal reflow of a metal thin-film layer disposed on a semiconductor substrate at reduced temperatures while maintaining good gap-filling properties. The system includes a process chamber designed as a high-Q resonant cavity for microwave energy. The substrate is supported within the chamber on an electrically non-conductive susceptor which allows movement therein to redefine the boundary conditions of the electromagnetic fields associated with the microwave energy. To prevent plasma formation or arcing in the chamber, the chamber is evacuated. This also reduces thermal transfer between the metal thin-film layer and the substrate via convection. Rapidly cooling is achieved, subsequent to the reflow of the metal thin-film layer, by pressurizing the chamber.
    Type: Grant
    Filed: July 30, 1997
    Date of Patent: August 21, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Steven T. Li
  • Patent number: 6274207
    Abstract: A method of coating a substrate with an oriented film. A target is ablated to create a plume. The substrate is manipulated, which may be by vibration, in the plume to coat the substrate with a film. The film is heated in a synthesis gel of the target to form the oriented film.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: August 14, 2001
    Assignee: The Board of Regents, The University of Texas System
    Inventors: Kenneth J Balkus, Jr., Mary E Kinsel, Ashley S Scott
  • Patent number: 6270861
    Abstract: An apparatus for forming thin films includes a deposition chamber having a window and having an environment maintained at a temperature and pressure selected for optimized deposition conditions. A target is supported within the deposition chamber, and a laser source projects a laser beam through the window onto the target with sufficient energy and duration to produce an ablation plume. A crystallization chamber is in communication with the deposition chamber through an opening and has an environment maintained at a temperature and pressure selected for optimized crystallization conditions. A substrate is movably supported within the crystallization chamber in front of the opening in alignment with the ablation plume. A seal or other suitable means segregates the environments of the deposition chamber and the crystallization chamber.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 7, 2001
    Assignee: UT, Battelle LLC
    Inventor: Douglas N. Mashburn
  • Patent number: 6265033
    Abstract: A system for the depositing of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within and directly above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: July 24, 2001
    Inventor: Donald Bennett Hilliard
  • Publication number: 20010006147
    Abstract: A method for treating a silicon substrate is described. The silicon substrate is placed into a sputtering equipment. A sputtering step is performed to simultaneously dry clean and amorphize the silicon substrate surface by using the sputtering equipment. A titanium film is deposited on the silicon substrate by the sputtering equipment.
    Type: Application
    Filed: February 6, 2001
    Publication date: July 5, 2001
    Inventor: Su-Chen Fan
  • Patent number: 6251488
    Abstract: This invention combines the precision spray process with in-flight laser treatment in order to produce direct write electronic components. In addition to these components, the process can lay down lines of conductive, inductive, and resistive materials. This development has the potential to change the approach to electronics packaging. This process is revolutionary in that components can be directly produced on small structures, thus removing the need for printed circuit boards.
    Type: Grant
    Filed: May 5, 1999
    Date of Patent: June 26, 2001
    Assignee: Optomec Design Company
    Inventors: W. Doyle Miller, David M. Keicher, Marcelino Essien
  • Patent number: 6248434
    Abstract: The invention concerns a composite body consisting of a hard metal, cermet or ceramic substrate body and at least one layer of a mechanically resistant material, a ceramic substance, a diamond-like layer, amorphous carbon and/or hexagonal boron nitride. The invention also concerns a method of producing this composite body, wherein, when the green compact has been dewaxed, with its pores still open and whilst it continues to be heated as from a temperature of between 600° C. and 1100° C., it is acted upon by sublimable solids and/or reaction gases which are necessary for coating purposes. The temperature of the green compact is then further increased and the latter is fully compressed by sintering, before one or more layers of the above-mentioned type is/are applied.
    Type: Grant
    Filed: June 3, 1999
    Date of Patent: June 19, 2001
    Assignee: Widia GmbH
    Inventors: Klaus Rödiger, Hartmut Westphal, Klaus Dreyer, Thorsten Gerdes, Monika Willert-Porada
  • Patent number: 6248394
    Abstract: The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: June 19, 2001
    Assignee: Agere Systems Guardian Corp.
    Inventors: Honghua Du, John Edwin Graebner, Sungho Jin, David Wilfred Johnson, Jr., Wei Zhu
  • Patent number: 6228228
    Abstract: A display as for images and/or information comprises a plurality of light-emitting fibers disposed in side-by-side arrangement to define a viewing surface. Each light-emitting fiber includes a plurality of light-emitting elements disposed along its length, each having two electrodes between which are applied electrical signals to cause the light-emitting element to emit light to display a pixel or sub-pixel of the image and/or information. The light-emitting fiber includes an electrical conductor disposed along its length to serve as a first electrode, a layer of light-emissive material disposed thereon, and a plurality of electrical contacts disposed on the light-emissive material to serve as the second electrodes of the light-emitting elements, and are formed in a continuous process wherein a transparent fiber passes through a plurality of processing chambers for receiving the electrical conductor, the light-emissive layer and the plurality of electrical contacts thereon.
    Type: Grant
    Filed: October 15, 1999
    Date of Patent: May 8, 2001
    Assignee: Sarnoff Corporation
    Inventors: Bawa Singh, William Ronald Roach, William Chiang
  • Patent number: 6183817
    Abstract: A method and apparatus to fabricate nano-device and semiconductor device structures and features by controlling a coherent or near coherent particle beam to directly deposit, or direct write, onto a preselected deposition site of a substrate and into a predetermined shape is provided. Evanescent wave plates are optionally included to increase the order of the particle beam prior to interaction with a photonic lens. The photonic lens is holographically generated by means of a source laser and an optical lens to focus the atomic beam onto the deposition site by means of Lorenz force interaction between light fields of the photonic lens and dipole moments of the atoms of the atomic beam.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: February 6, 2001
    Inventor: Michael S. Gersonde
  • Patent number: 6180186
    Abstract: A fabrication method in which an object is formed as a plurality of successive laminae, the method comprising the repeated steps of: (i) applying a precursor onto a recipient surface; and (ii) locally heating regions of the deposited precursor by directing a light beam onto those regions of the deposited precursor, so that the locally heated regions transform to a solid material.
    Type: Grant
    Filed: August 6, 1999
    Date of Patent: January 30, 2001
    Assignee: Imperial College of Science, Technology and Medicine
    Inventors: Kwang-Leong Choy, Wei Bai, Issac Chang
  • Patent number: 6177151
    Abstract: An device for depositing a transfer material onto a receiving substrate includes a source of pulsed laser energy, a receiving substrate, and a target substrate. The target substrate comprises a laser transparent support having a back surface and a front surface. The front surface has a coating that comprises a mixture of the transfer material to be deposited and a matrix material. The matrix material is a material that has the property that, when it is exposed to pulsed laser energy, it is more volatile than the transfer material. The source of pulsed laser energy is be positioned in relation to the target substrate so that pulsed laser energy is directed through the back surface of the target substrate and through the laser-transparent support to strike the coating at a defined location with sufficient energy to volatilize the matrix material at the location, causing the coating to desorb from the location and be lifted from the surface of the support.
    Type: Grant
    Filed: May 25, 1999
    Date of Patent: January 23, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Douglas B. Chrisey, R. Andrew McGill, Alberto Pique
  • Patent number: 6150203
    Abstract: To provide a method of improving the characteristics and reliability of thin film transistors (TFT) which have been formed with a highest process temperature of not more than 700.degree. C. Crystalline silicon films are thermally oxidized and TFT gate insulating films, for example, are formed with the oxide so obtained. At this time, the thermal oxidation is carried out at a temperature of 500-700.degree. C. in such a way that no thermal damage is done to the substrate, for example, and a reactive gas which contains thermally excited or decomposed oxygen or nitrogen oxide (NO.sub.X, where 0.5.ltoreq..times..ltoreq.2.5) is used for the oxidizing gas. The oxidation reaction may be promoted by heating in an atmosphere of oxides of nitrogen at a high pressure of 2-10 atmospheres. Deterioration due to the implantation of hot electrons, for example, can be prevented and element reliability can be increased by using the thermal oxide films obtained in this way as gate insulating films.
    Type: Grant
    Filed: August 30, 1995
    Date of Patent: November 21, 2000
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiko Takemura
  • Patent number: 6063436
    Abstract: The uniformity of individual layers of multiple coating materials deposited on a substrate in a vacuum deposition process (such as for manufacturing mirrors for use in ring laser gyroscopes) is improved by an apparatus and method that include changing the masks placed in front of the substrate upon which the coating materials are to be deposited. Separate masks are tuned for each particular coating material to compensate for the unique plume shape of the material, and provide a uniform deposition of that particular coating material. Each mask is positioned in front of the substrate when the material for which the mask has been tuned is being deposited. The masks are changed when the coating material is changed, without venting the chamber.
    Type: Grant
    Filed: July 10, 1998
    Date of Patent: May 16, 2000
    Assignee: Litton Systems, Inc.
    Inventors: James M. Pavell, Chong C. Lee, Agop H. Cherbettchian, Alan F. Stewart
  • Patent number: 6022598
    Abstract: A uniform film of sapphire and tungsten is deposited onto a surface of a substrate using the ionized cluster beam ("ICB") apparatus. During ICB deposition, a tungsten crucible containing sapphire is heated until a vapor of sapphire and tungsten is formed. The tungsten crucible is heated to form a tungsten vapor, which causes the crucible material to mix with the sapphire, thereby forming a vapor mixture of sapphire and tungsten. The vapor is ejected through a small nozzle into a vacuum region. The resulting adiabatic expansion of the vapor promotes formation of atomic clusters. Some of the clusters are ionized, and electrons are stripped off the clusters. The clusters are accelerated toward the substrate, which is also within the vacuum region. The clusters impact the surface of the substrate, where they are deposited to form the uniform sapphire/tungsten film. The film is deposited in an sapphire (aluminum oxide)/tungsten ratio of 2:1. The film has a relatively high index of refraction of approximately 2.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: February 8, 2000
    Assignee: United Technologies Corporation
    Inventors: Scott M. Tyson, Richard Y. Kwor, Leonard L. Levenson, deceased
  • Patent number: 6013130
    Abstract: Layers of compound semiconductor 60 are grown epitaxially on a substrate 40. One or more components 24 are removed from a target 14 by a supply of energy 18, and reacted with gas surrounding the target. The gas stream conveys the components through a nozzle 34 to achieve a uniform layer on the substrate.
    Type: Grant
    Filed: March 22, 1996
    Date of Patent: January 11, 2000
    Assignee: Deutsche Forschungsanstalt Fuer Luft- und Raumfahrt e.V.
    Inventors: Ralph Dieter, Hans Opower, Heinrich Weyer
  • Patent number: 5989990
    Abstract: The present invention relates to tinoxide thin film, a process for manufacturing thereof comprising the step of depositing tin while providing oxygen or ionized oxygen around a substrate, and relates to a gas detecting sensor prepared by the use of such tinoxide thin film.
    Type: Grant
    Filed: February 14, 1996
    Date of Patent: November 23, 1999
    Assignee: Korea Gas Corporation
    Inventors: Seok Keun Koh, Hyung Jin Jung, Seok Kyun Song, Won Kook Choi, Dongsoo Choi, Jin Seok Jeon
  • Patent number: 5980975
    Abstract: The present invention is directed to providing thin-film-coated substrate manufacturing methods and apparatus that make it possible to manufacture large thin-film-coated substrates such as anti-reflection filters using relatively small production facilities. The thin-film-coated substrate manufacturing methods pertaining to the present invention area capable of producing thin films on substrates to be coated as large as the film formation area by using a film formation monitor or monitors placed outside of the film formation area or displaceably mobile therein, measuring the thickness of the monitor thin film or films formed on the film formation monitor or monitors, and controlling the film coating process based on the measured thickness of the monitor thin film or films. It is also capable of increasing the productivity of the manufacturing process through increased flexibility in the arrangement of substrate or substrates to be coated inside the film formation area.
    Type: Grant
    Filed: April 19, 1996
    Date of Patent: November 9, 1999
    Assignee: Toray Industries, Inc.
    Inventors: Fumiyasu Nomura, Takeshi Saito
  • Patent number: 5976992
    Abstract: A method of supplying an excited oxygen, which comprises the steps of exciting a oxygen gas or a gas containing an oxygen atoms with plasma in a plasma discharge zone thereby forming an excited oxygen, and transferring a gas containing the excited oxygen into a reaction zone disposed next to the plasma discharge zone while keeping a pressure within the plasma discharge zone lower than that of the reaction zone. In a reaction chamber, a reaction by the excited oxygen is effected. As a result, the formation of a thin film on a substrate disposed in a reaction chamber, the etching of the substrate and the cleaning of the interior of the reaction chamber can be carried out.
    Type: Grant
    Filed: September 27, 1994
    Date of Patent: November 2, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Ui, Isao Matsui, Yoshiaki Nakamura
  • Patent number: 5904961
    Abstract: A method of depositing organic layers on a substrate in organic light emitting devices is disclosed. The method uses a donor support which is coated with a transferable coating of an organic donor material selected as one of a plurality of organic materials useful in an organic light emitting device. The donor coating is positioned in transferable relationship with the substrate in an environment of reduced pressure. The donor support is heated to cause the transferable coating of organic donor material to transfer to a position on or over the substrate and to form a layer of the organic material on the substrate.
    Type: Grant
    Filed: January 24, 1997
    Date of Patent: May 18, 1999
    Assignee: Eastman Kodak Company
    Inventors: Ching W. Tang, Joseph K. Madathil, Dustin L. Comfort
  • Patent number: 5861190
    Abstract: A process of growing a dielectric layer includes a step of heating a gas mixture of at least one gas having a first chemical element of oxygen and a second chemical element other than oxygen to a first predetermined temperature to produce reactive precursors of the gas mixture. The reactive precursors are then introduced into a reaction chamber that houses at least one wafer to grow the dielectric layer on the wafer within the reaction chamber at a second predetermined temperature below the first predetermined temperature. A semiconductor manufacturing apparatus of growing the dielectric layer is also described.
    Type: Grant
    Filed: March 25, 1996
    Date of Patent: January 19, 1999
    Assignee: Hewlett-Packard Co.
    Inventors: Wayne M. Greene, Michael B. Cox, Frank Perlaki, Elizabeth C. Carr
  • Patent number: 5858476
    Abstract: Apparatus and methods for treatment of materials by producing gaseous product material in the form of high purity molecules including metal oxides, metal carbides, etc., using catalytic and non-catalytic processes, and stoichiometrically depositing the gaseous product material on articles, substrates or base materials in the fields of semi-conductors, superconductors, thin optical films, wear and corrosion and the like. The deposition of high purity gas phase material produced by the disclosed methods are useful in forming common refractory layers, films, and bodies such as ferroelectric, superconducting and semiconductor materials, to name a few. Catalytic reaction for the formation and desorption of the molecules, etc., may be monitored by the use of work function measurements. Such measurements also provide a basis for detecting the presence of impurities, gasification of the surface catalyst, and conditions which favor maximum gas phase molecular formation.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: January 12, 1999
    Inventor: Harold E. Siess
  • Patent number: 5858456
    Abstract: The invention relates to a method of piece by piece metal coating of thermally sensitive objects, for example optical discs. The objects are coated by being located particularly close to an evaporation source for evaporated metal. The evaporation source constitutes a melt enclosed in a crucible which is heated by inductive means. The distance between the object and the melt is kept to a few centimeters and the exposure time is kept to a few seconds in order to coat the objects without causing damage. The method includes the steps of providing an evaporation chamber containing an evaporation source of metal, reducing the pressure in the evaporation chamber, and placing the object in the evaporation chamber so that a surface of the object is opposed to a surface of the source of metal and is separated from the surface of the source of metal by a distance which is the same as or less than a dimension of the surface of the object to be coated.
    Type: Grant
    Filed: July 7, 1995
    Date of Patent: January 12, 1999
    Assignee: Applied Vacuum Technologies 1 AB
    Inventor: Johan Nordlander
  • Patent number: 5851601
    Abstract: A method for controlling the application of lubricant to thin film, magnetic disk media entailing ultrasonic vibration of heated disk lubricant.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: December 22, 1998
    Assignee: StorMedia, Inc.
    Inventors: Yassin Mehmandoust, Hamid R. Samani, Atef H. Eltoukhy
  • Patent number: 5830588
    Abstract: The invention relates to a method of producing a magnetic material for use in an ultrahigh density magnetic recording medium and to the medium itself. The method general includes the steps of vaporing a ferromagnetic lanthanide rare earth, growing clusters of the ferromagnetic lanthanide rare earth at a temperature below the temperature at which the ferromagnetic lanthanide rare earth forms locked-moment clusters, filtering superparamagnetic clusters from locked-moment clusters, and collecting the locked-moment clusters. Preferably, the ferromagnetic lanthanide rare earth is a ytterbium rare earth. Advantageously lanthanide alloys, mixtures of lanthanide rare earths and alloys of a mixture of lanthanide rare earths can be used. The filtering employs a gradient magnetic field to separate superparamagnetic clusters from moment-locked clusters. The gradient field magnet separates the superparamagnetic clusters which deflect by a large amount from the locked-moment clusters which deflect by a small amount.
    Type: Grant
    Filed: March 16, 1993
    Date of Patent: November 3, 1998
    Assignee: University of Virginia Patent Foundation
    Inventors: David C. Douglass, Jean Pierre Bucher, Louis Aub Bloomfield
  • Patent number: 5824463
    Abstract: This invention describes a method for manufacturing a photographic support which includes providing a support and laminating a surface of the support with a polymer resin formulation containing from 0.001 to 1 weight percent antioxidant at a temperature of from 305.degree. to 360.degree. C. while exposing the polymer resin formulation to an ozone containing gas at a rate of greater than 0.1 mg/m.sup.2 of said support.
    Type: Grant
    Filed: March 24, 1997
    Date of Patent: October 20, 1998
    Assignee: Eastman Kodak Company
    Inventor: Eric E. Arrington
  • Patent number: 5820946
    Abstract: A PZT ferroelectric thin film is sputter deposited on an electrode without microcracks while avoiding oxygen and Pb ion deficiencies at the electrode interface by initially forming a buffer layer containing a sufficient amount of a volatile Pb component and a sufficient amount of oxygen to easily absorb the energy of sputter particles. The PZT ferroelectric thin film can also be deposited by laser ablation.
    Type: Grant
    Filed: May 8, 1996
    Date of Patent: October 13, 1998
    Assignee: Korea Institute of Science and Technology
    Inventors: Tae Song Kim, Joon Han Kim, Dong Heon Lee, Jeon-Kook Lee, Hyung Jin Jung
  • Patent number: 5820948
    Abstract: The apparatus for depositing thin films on both a first surface and a second surface of the substrate via off-axis laser ablation according to present invention comprises (1) a vacuum chamber, the vacuum chamber having (a) a first target of a first deposition material supported by a first target holder, (b) a second target of a second deposition material supported by a second target holder so as to positioned to be substantially coplanar with the first target, (c) a substrate holder for holding a substrate above a space between the first and second targets, the substrate being oriented to be substantially perpendicular to the targets, (d) a heating means for heating the first and second surfaces of the substrate, (e) a first entrance window through which a first laser beam passes to impinge onto the first target with a predetermined angle, and (f) a second entrance window through which a second laser beam passes to impinge onto the second target with a predetermined angle and (2) a laser optical system compri
    Type: Grant
    Filed: March 1, 1996
    Date of Patent: October 13, 1998
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hideo Itozaki, Tatsuoki Nagaishi
  • Patent number: 5820942
    Abstract: The present invention is generally directed to a process and a system for transforming a liquid into a solid material using light energy. In particular, a solution containing a parent material in a liquid form is atomized in a reaction vessel and directed towards a substrate. The atomized liquid is exposed to light energy which causes the parent material to form a solid coating on a substrate. The light energy can be provided from one or more lamps and preferably includes ultraviolet light. Although the process of the present invention is well suited for use in many different and various applications, one exemplary application is in depositing a dielectric material on a substrate to be used in the manufacture of integrated circuit chips.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: October 13, 1998
    Assignee: AG Associates
    Inventors: Rajendra Singh, Rahul Sharangpani
  • Patent number: 5777372
    Abstract: A diamond film biosensor has a transducer that is partially or totally composed of semiconducting diamond film and/or undoped diamond film. A bioidentifier is fixed partly or entirely on the surface of said semiconducting diamond film and/or undoped diamond film. The peripheral circuits are partly or entirely composed of undoped diamond film and/or semiconducting diamond film. The diamond film biosensor can detect chemical substances and biosubstances with a high sensitivity and fast response, has a long lifetime, and is reusable.
    Type: Grant
    Filed: March 1, 1996
    Date of Patent: July 7, 1998
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventor: Koji Kobashi
  • Patent number: 5776409
    Type: Grant
    Filed: September 1, 1994
    Date of Patent: July 7, 1998
    Assignee: 3D Systems, Inc.
    Inventors: Thomas A. Almquist, Dennis R. Smalley
  • Patent number: 5733609
    Abstract: The methods for ceramic coatings synthesized by chemical reactions energized by laser plasmas were invented. Laser plasmas were generated by pulsed laser beams focused by a reflector having a hole. The ions and electrons were formed by the laser plasmas from gaseous molecules or solid materials. The first method applied an electric or a magnetic field to separate ions from electrons and to promote ion-atom and ion-molecule reactions. The product molecular ions were focused and deflected to coat patterned coatings with extremely high precision. The second method allowed the electron-ion recombinations to form product molecules or radicals to form high uniform coatings. These two methods and their combinations provides consistent, or continuous modulations, or discrete layers in vast varieties of chemical compositions and crystal structures. Ceramic films were separated by dissolving the substrates.
    Type: Grant
    Filed: June 1, 1993
    Date of Patent: March 31, 1998
    Inventor: Liang Wang
  • Patent number: 5688551
    Abstract: A method of forming a multicolor organic electroluminescent display panel is disclosed. The method uses a close-spaced deposition technique to form a separately colored organic electroluminescent medium on a substrate by transferring, patternwise, the organic electroluminescent medium from a donor sheet to the substrate.
    Type: Grant
    Filed: May 16, 1996
    Date of Patent: November 18, 1997
    Assignee: Eastman Kodak Company
    Inventors: Jon Eric Littman, Ching Wan Tang
  • Patent number: 5688565
    Abstract: A precursor liquid comprising several metal 2-ethylhexanoates, such as stroritium tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a potion of the layered superlattice material film in a component of the integrated circuit.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: November 18, 1997
    Assignee: Symetrix Corporation
    Inventors: Larry D. McMillan, Carlos A. Paz de Araujo, Michael C. Scott
  • Patent number: 5674574
    Abstract: A vapor delivery system for vaporization and delivery of a solid precursor includes a housing having an inlet for receiving a carrier gas. A rotatable substrate surface is contained in the housing having a solid precursor material applied thereon. A focused thermal beam is positioned for impingement on the solid precursor material. A drive mechanism moves one of the rotatable surface and the focused thermal beam relative to the other such that with rotation of the rotatable substrate surface the focused thermal beam continuously impinges on a different contact area of the solid precursor material for vaporization thereof. The housing further has an outlet for transport of the vaporized precursor material therefrom. The rotatable surface may be a cylindrical surface or a circular platen surface. A CVD system having a vapor delivery system is also provided along with a device for use in the delivery system.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: October 7, 1997
    Assignee: Micron Technology, Inc.
    Inventors: David R. Atwell, Donald L. Westmoreland
  • Patent number: 5620772
    Abstract: This invention discloses a decorative sheet having a hammer tone texture and the method used to obtain such hammer tone texture. A hammer tone composition is agitated, applied to a decorative sheet using a controlled means of delivery in a sufficient thickness, and then dried at a sufficient temperature and for a sufficient time to provide the hammer tone texture on the decorative sheet.
    Type: Grant
    Filed: March 17, 1995
    Date of Patent: April 15, 1997
    Assignee: Minnesota Mining and Manufacturing Company
    Inventor: Michio Taniguchi
  • Patent number: 5611883
    Abstract: A process for joining solid compositions, comprising placing a first solid composition having a first joining zone and a second solid composition having a second joining zone in a chamber; positioning a first gas phase, which comprises a substance that decomposes to a material that adheres to the first and second solid compositions during the process, proximate the target area; directing an energy beam to the first and second joining zones to selectively deposit material from the first gas phase on the first joining zone and the second joining zone until a joint is formed between the first and second solid compositions wherein the joint adheres to the first and second compositions at the first and second joining zones.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: March 18, 1997
    Assignee: Board Of Regents, The University of Texas System
    Inventors: James V. Tompkins, Britton R. Birmingham, Kevin J. Jakubenas, Harris L. Marcus
  • Patent number: 5612099
    Abstract: A method and apparatus for coating the surface of a substrate suspends a coating material above the surface of the substrate and irradiates both the coating material and the underlying surface of the substrate. By irradiating both the coating material and the underlying surface of the substrate, a first portion of the coating material is melted to form an at least partially molten droplet of coating material. In addition, at least a second portion of the coating material is ablated to thereby create an ablation plume which propels the at least partially molten droplet of coating material toward the substrate. In addition, the portion of the substrate toward which the at least partially molten droplet of coating material is propelled is simultaneously heated, such that the at least partially molten droplet coating material adheres to the heated substrate, thereby coating the surface of the substrate.
    Type: Grant
    Filed: May 23, 1995
    Date of Patent: March 18, 1997
    Assignee: McDonnell Douglas Corporation
    Inventor: Stephen L. Thaler
  • Patent number: 5593742
    Abstract: An ablation process by which fused deposits of silicon particles are accuated on a substrate of selected material in accordance with whether microclusters of spherical configurations or microfilaments of cylindrical configurations are to be fabricated. Silicon ablation is accomplished in an inert gas atmosphere with an excimer laser that generates light pulses of which the wavelength and frequency are controlled to fix the energy level thereof. The pressure of the inert gas atmosphere is also controlled in accordance with whether microclusters or microfilaments are to be fabricated.
    Type: Grant
    Filed: August 24, 1995
    Date of Patent: January 14, 1997
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Robert A. Lux, James A. Harvey, Arthur Tauber, Steven C. Tidrow
  • Patent number: 5589231
    Abstract: The present invention is directed to a method of producing diamond films through the thermal dissociation of molecular chlorine into atomic chlorine in a heated graphite heat exchanger at temperatures of from about 1,100.degree. C. to about 1,800.degree. C. The atomic chlorine is subsequently rapidly mixed with molecular hydrogen and carbon-containing species downstream. Atomic hydrogen and the carbon precursors are produced through rapid hydrogen abstraction reactions of atomic chlorine with molecular hydrogen and hydrocarbons at the point where they mix. The mixed gases then flow across a heated substrate, where diamond is deposited as a film. Diamond deposits have been confirmed by Raman spectroscopy.
    Type: Grant
    Filed: April 4, 1995
    Date of Patent: December 31, 1996
    Assignee: Rice University
    Inventors: Robert H. Hauge, Chenyu Pan
  • Patent number: 5585147
    Abstract: A surface treatment of a glass fabric used for a fiber reinforced composite such as multilayer circuit boards comprises the steps of exposing the glass fabric to an atmospheric pressure plasma of a mixture gas to obtain a plasma-treated surface of the glass fabric, and coating an organosilane compound on the plasma-treated surface. The mixture gas contains as a reaction gas at least one of an oxidative gas and a fluorine-containing gas, and a rare gas as a carrier of the reaction gas. The mixture gas is pre-heated prior to the plasma excitation thereof. When the glass fabric includes an organic compound as a sizing agent, the organic compound can be efficiently removed from the glass fabric by the exposing step. For example, the organosilane compound can be coated on the plasma-treated surface by exposing the plasma-treated surface to a second atmospheric pressure plasma of a second mixture gas containing an organosilane monomer.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: December 17, 1996
    Assignee: Matsushita Electric Works, Ltd.
    Inventors: Satoru Ogawa, Yasushi Sawada, Masahiro Matsumura, Yoshihiko Nakamura
  • Patent number: 5582879
    Abstract: In a method of manufacturing a thin film, evaporated particles are generated by a vapor source and are clustered. The clustered evaporated particles are deposited onto a substrate in a vacuum atmosphere without ionizing the particles. A partial pressure of water in the vacuum atmoshpere is controlled to not more than 5.times.10.sup.-6 Torr. A temperature of the substrate is maintained to be 150.degree. C. or lower. A film according to this method has a high adhesion characteristics and a high mechanical strength without heating the substrate to a high temperature and without damaging the substrate by ions.
    Type: Grant
    Filed: November 4, 1994
    Date of Patent: December 10, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hidehiko Fujimura, Mitsuharu Sawamura, Makoto Kameyama, Akihiko Yokoyama