Abstract: Methods of making a full-color organic light-emitting display are disclosed. The methods include ink-jet printing of fluorescent dopants selected to produce red, green, or blue light emission from designated subpixels of the display. The dopants are printed sequentially from ink-jet printing compositions which permit printing of dopant layers over a light-emitting layer containing a host material selected to provide host light emission in a blue spectral region. The dopants are diffused from the dopant layer into the light-emitting layer by exposing the light-emitting layer and the dopant layers to vapor of a fluid or fluid mixture. When an ink-jet printing composition is formulated with a printing fluid having fluid vapors which promote dopant diffusion, the steps of ink-jet printing and diffusing of dopants can be combined to form a selectively doped light-emitting layer.

Abstract: A method of making an organic light-emitting device is disclosed in which a dopant layer is formed adjacent to a light-emitting layer containing a light-emitting host material. The dopant is diffused from the dopant layer into the light-emitting layer by exposing the light-emitting layer and the dopant layer to vapor of a fluid or fluid mixture. The method permits doping of a light-emitting layer with one dopant or with multiple dopants so as to modify the color and efficiency of light emitted from the light-emitting layer.

Abstract: Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed.

Abstract: A method and apparatus for manufacturing EL devices in a short period of time wherein during formation of a light emitting layer composed of II, III or VI-group of elements doped with a light emitting element through a chemical vapor deposition method, water content of a transport gas that transports gasified organic metals is removed through a dehydration filter and thus, source material decomposition due to the water content is prevented and a steady supply of source materials becomes possible. By removing the water content of the transport gas, source materials can be supplied constantly even if heating temperatures exceed a temperature conventionally regarded as the temperature at which decomposition starts and thus, a light emitting layer having a practical thickness can be formed in a short period of time. Because of the high-speed film formation, the rate of the film being contaminated with impurities lessens and the light emitting layer has a luminance three times that of conventional layers.

Abstract: A process for coating an exterior of a lamp is disclosed, which comprises performing the coating in a microwave reactor by a microwave plasma CVD process and coupling microwave radiation into the microwave reactor with a microwave power greater than or equal to a power threshold value at which a plasma with reduced microwave permeability is ignited in the microwave reactor.

Abstract: Electron transporting layers comprised of organic free radicals are disclosed for use as the electron transporting layer in multi-layer structures that are useful for fabricating organic light emitting devices (OLEDs). For example, the multi-layer structure may include an electron transporting layer containing an organic free radical comprised of a multi-aryl-substituted cyclopentadienyl free radical of formula (I): ##STR1## wherein Ar.sub.1, Ar.sub.2, Ar.sub.3, Ar.sub.4 and Ar.sub.5 each are, independently of the other hydrogen, an alkyl group or an unsubstituted or substituted aromatic group. More specifically, included among these materials are those which are comprised of an electron transporting material based on, the pentaphenylcyclopentadienyl Cp.sup..phi..

Abstract: Improved luminous efficiency in plasma displays has been achieved by coating phosphor particles with a dielectric layer having a refractive index, for the ultraviolet light emitted by the plasma, that is intermediate between that of the phosphor and vacuum. When deposited in a thickness range between 0.5 and 5 microns, the layer causes the particle's reflectivity to be reduced because of reduced reflection at the vacuum-coating interface as well as internal reflection at the coating-vacuum interface. For coating thicknesses in the range of 0.1 to 0.5 microns, reflectivity is reduced because of interference between rays reflected at the vacuum-coating interface and the coating-phosphor interface. Several methods for forming these antireflection coatings are described. These include CVD, PVD, and suspension in molten dielectric followed by decanting onto either sticky or non-stick surfaces.

Abstract: A method of depositing organic layers on a substrate in organic light emitting devices is disclosed. The method uses a donor support which is coated with a transferable coating of an organic donor material selected as one of a plurality of organic materials useful in an organic light emitting device. The donor coating is positioned in transferable relationship with the substrate in an environment of reduced pressure. The donor support is heated to cause the transferable coating of organic donor material to transfer to a position on or over the substrate and to form a layer of the organic material on the substrate.

Abstract: In a method of depositing a metal sulfide film on a substrate a solution containing at least one metal compound precursor comprising at least one thiocarboxylate ligand SECR, wherein E is selected from the group consisting of O and S and wherein R is selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, halogenated alkyl, and halogenated aryl is prepared. The substrate is heated to a reaction temperature. The solution is evaporated to form vapors of the metal compound precursor. The vapors and the substrate heated to the reaction temperature are contacted. The reaction temperature is sufficient to decompose the metal compound precursor to form a metal sulfide film of at least one metal on the substrate.

Abstract: One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of a vacuum vapor deposition method or molecular beam epitaxial method to produce a ternary compound semiconductor material having a low vapor pressure, and the thus produced ternary compound semiconductor material is deposited on a substrate to form a ternary compound semiconductor thin film. Particularly, when a phosphor thin film for electroluminescence emitting blue light is to be grown, an element Sr and a binary compound Ga.sub.2 S.sub.3 are respectively evaporated by the vacuum evaporation method or molecular beam epitaxial method to deposit a ternary compound semiconductor material SrGa.sub.2 S.sub.

Abstract: A thin film electroluminescence device and a process for production thereof. This device is characterized in that as a light emitting layer material or charge injection layer material, a polymer film having at least one of a light emitting layer function, a charge transport function and a charge injection function, and having a film thickness of not: more than 0.5 .mu.m is prepared by the vacuum evaporation method and used.

Abstract: The present method provides a method for preparing the PI varnish which has the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides. Such PI has a suitable thermal expansion coefficient and characteristics different form those of the PI currently in use.

Abstract: A method of forming a multicolor organic electroluminescent display panel is disclosed. The method uses a close-spaced deposition technique to form a separately colored organic electroluminescent medium on a substrate by transferring, patternwise, the organic electroluminescent medium from a donor sheet to the substrate.

Abstract: A conjugated poly(p-phenylene vinylene) is manufactured by means of CVD and using simple monomers. Such a polymer is particularly adaptable for use as an active layer in electroluminescent devices, such as a light-emitting diode.

Abstract: Items of material are patterned on a substrate by forming a layer of photoresist on the substrate and a layer of metal on the photoresist. The photoresist is patterned to define an opening exposing a portion of the substrate and the metal is patterned to define an aperture smaller than the opening so as to divide the exposed surface of the substrate into shadow areas and a non-shadow area. A first material system is evaporated generally perpendicular to the aperture to form a first organic light emitting diode on the surface of the substrate in the non-shadow area and second and third material systems are evaporated at angles to the aperture to form second and third organic light emitting diodes in the shadow areas. Passivation material is evaporated perpendicularly onto the first diode and at the angle onto the second diode.

Abstract: A method and apparatus for coating a CRT screen after assembly. The method and apparatus includes isolating a surface portion of the CRT to be coated from the remaining surface to prevent or minimize coating problems resulting from outgassing and to isolate noncompatible components from the deposition environment.

Abstract: An electroluminescence element comprises the luminescent layer having a luminescence spectrum in which, in addition to the original emission peaks of the rare earth element, one or more emission peaks exist within a 10 nm wavelength range around each of some original emission peak. The luminescent layer is of a compound semiconductor doped with a rare earth element, deposited by organic metal chemical vapor deposition in which source gases for the rare earth element and elements constituting the compound semiconductor, not containing any halogen element, are supplied to the vicinity of the insulating substrate, separately from halogen or hydrogen halide gas which is also supplied to the vicinity of the insulating substrate.

Abstract: A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M.sup.II M.sup.III.sub.2 X.sub.4 :RE, where M.sup.II is a group II metal taken from the group magnesium, calcium, strontium and barium, M.sup.III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400.degree. and 800.degree. C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound.

Abstract: A thin film electroluminescence device and a process for production thereof. This device is characterized in that as a light emitting layer material or charge injection layer material, a polymer film having at least one of a light emitting layer function, a charge transport function and a charge injection function, and having a film thickness of not more than 0.5 .mu.m is prepared by the vacuum evaporation method and used.

Abstract: There is described a process for the vapor deposition of a scintillator phosphor composition with concomitant shadowing wherein the substrate to be processed is rotated through an arc relative to a vapor source of the scintillator phosphor composition whereby shadowing introduces voided gaps or interstices between columns as a result of the preferential components receiving more coating flux, particularly in the presence of oblique flux.

Abstract: During manufacture of electroluminescent elements, layers of material are deposited upon a substrate as it is moving in a vacuum chamber beneath masks that shield the terminal regions of transparent electrodes formed upon the substrate. The masks are arranged so as to not contact the substrate, and are placed between the layer-forming material source. First insulation films, the light-emitting layers, or the second insulation films, or combinations thereof may be deposited using the method.

Abstract: The thickness distribution of a vapor deposited layer such as an interference filter deposited on a substrate such as a glass faceplate for a projection television tube, is controlled in the plane of the substrate by employing at least one variable transmission mark to partially shield the substrate during deposition.

Abstract: A process for preparing an electroluminescent film which comprises causing a substrate held at a high temperature to simultaneous contact two kinds of vapors of (a) Group II element and a Group VI element or a compound thereof, capable of forming a Group II-VI compound semiconductor, and (b) a halide of an element capable of acting as luminescent centers in the Group II-VI compound semiconductor, in the presence of flowing hydrogen or an inert gas, whereby a thin electroluminescent film comprising the Group II-VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.

Abstract: A process for forming a phosphor comprising the steps of:(a) providing a substrate for deposition and growth of an alkali halide phosphor,(b) forming a patterned surface on the substrate comprising a plurality of mesas, each of the mesas having an incline, a decline, and a horizontal surface, the mesas being separated from one another by horizontal segments of the substrate and wherein:(i) the ratio of the height of each of the mesas to the width of the horizontal segments is in the range of about 1:20 to 1:4;(ii) the ratio of the width of each of the mesas to the width of the horizontal segments is in the ratio of about 1:30 to 1:4; and(iii) the angles of incline and decline of each of the mesas are between about 5.degree. to 85.degree.; and(c) depositing an alkali halide phosphor on the patterned surface of the substrate of step (b), thereby forming cracks, in the deposited phosphor, originating from the inclines and/or declines of each of the mesas.

Abstract: Disclosed are(1) a thin film electrode for devices comprising an electron-injectable metal and an organic compound and having an excellent uniformity and minuteness,(2) a process for production of a thin film electrode for devices which comprises co-vapor depositing an electron-injectable metal and an organic compound, and(3) a process for production of an electroluminescence device which comprises co-vapor depositing an electron-injectable metal and an organic compound to form a cathode.The thin film electrode of the present invention has a small volume resistivity. An EL device using said thin film electrode has high luminous efficiency and can be expected to be utilized as a light emitting material for various display devices.

Abstract: Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

Abstract: In order to provide a thin oxysulfide film excellent in crystallinity and suitable for use as a luminescent layer of a thin film EL device and a thin fluorescent film for a CRT, a metal element is evaporated from an evaporation source provided in a chamber in which a sulfur gas and an oxygen gas have been introduced to combine those substances chemically on a substrate provided in the chamber to form a thin oxysulfide film on a surface of the substrate.

Abstract: An input screen scintillator for an X-ray image intensifier tube. The tube includes light conductive cesium iodide needles formed on an electrically conductive substrate. Each needle is entirely coated with a material such as a metal or a semiconductor which reflects the light travelling within the needle toward the inside of the needle. This coating can enhance the efficiency and resolution of the image intensifier tube.

Abstract: A method of manufacturing a hot-cathode element which consists of a rare-earth-oxide-doped refractory metal, notably thoriated tungsten, and which also contains carbon components, first a plurality of layers of the hot-cathode element being successively deposited on a substrate member (2) by means of a CVD process, after which notably the hot-cathode element is separated from the substrate member (2). The strength required for further working of the hot-cathode element is improved in that in the course of the CVD process decarburizing intermediate treatments are performed, the hot-cathode element being carburized during an aftertreatment.

Abstract: In a manufacturing method for an electroluminescent thin film, a base material made of a II-VI group compound semiconductor and a material of an element for an emission center to be included in the base material are provided separately in first and second gas passages provided in a source zone on the upstream side of a reaction tube. The base material is transported to a growth zone on the downstream side thereof through the first gas passage by the use of an inert carrier gas, while the element material is transported through the second gas passage in the form of a halogen compound vapor, so as to grow an electroluminescent thin film on a substrate disposed in the growth zone. A reducing gas is fed to the growth zone through a third gas passage which bypasses the source zone from the upstream side to the downstream side of the reaction tube.

Abstract: The thickness distribution of a vapor deposited layer such as an interference filter deposited on a skirted substrate such as a glass faceplate for a projection television tube, is improved by shielding the substrate from indirect flux of vapor so as to reduce the shadowing effect of the skirt upon the thickness distribution of the deposited layer thereby improving the white field uniformity of the resultant projection image.

Abstract: A solid source chemical vapor deposition apparatus and a CVD method for fabricating semiconductor devices are disclosed. In accordance with the process for fabricating semiconductor devices, a CVD reactor chamber having a solid reactant source apparatus coupled thereto is provided. The reactant source apparatus includes a container which can be heated in a controllable manner and which has a gas diffuser located in the container. The container is provided with gas input and output which are located so that a carrier gas can be passed through the gas diffuser and through a finely divided solid reactant source material which is positioned over the gas diffuser. The carrier gas together with any vapor derived from the solid reactant source material is conveyed from the outlet of the reactant source apparatus to the CVD reactor chamber.

Abstract: A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the same apparatus without decreasing a growth rate of the film. Accordingly, EL displays having a large area which possess a high quality and can be manufactured efficiently.

Abstract: A method for manufacturing a color CRT includes the step of coating a shadow mask of the color CRT in black. It further includes the step of forming an electron beam reflecting film by depositing tungsten oxide with a large electron beam reflection coefficient on the side of an electron beam irradiated surface of the shadow mask coated in black.

Abstract: A scintillating article comprising a substrate coated with an inorganic scintillating material comprising a doped or undoped material selected from the group consissting of barium fluoride, calcium fluoride, zinc oxide, zinc sulfide, zinc silicate, bismuth germanate, fast cathode ray tube phosphors, yttrium silicate, rare earth silicates, orthosilicates, and mixtures thereof. Also disclosed is an appertaining method of forming such a scintillating article, comprising depositing the inorganic scintillating material by chemical vapor deposition (CVD). In a particularly advantageous embodiment, the substrate is of fibrous form, e.g., a quartz optical quality fiber, which is coated with a scintillating material such as barium fluoride.

Abstract: Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

Abstract: The disclosure describes a thin film EL device including a luminescent layer made of column polycrystals formed by independently evaporating luminescent host material and an activator and then combining the evaporated substances on a substrate. Electrons in the luminescent layer which are accelerated by an electric field applied from the outside efficiently collide against the activator without being intercepted by interfaces between crystalline particles. The thin film EL device of the present invention can be used for display, illumination, writing, reading out, and erasure of signals of photorecording mediums.

Abstract: A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

Abstract: A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.

Abstract: Si.sub.2 H.sub.6 and PH.sub.3 are introduced into a heated reaction tube in which a plurality of substrates are contained under vacuum pressure, thereby forming phosphor-doped silicon films on the substrates. By changing the flow of Si.sub.2 H.sub.6, a first layer consisting of a silicon film containing phosphor of low density, a second layer substantially consisting of phosphor, and a third layer consisting of substantially the same composition as that of the first layer are deposited in the order mentioned. Thereafter, the first through third layers are heated, thereby diffusing phosphor contained in the second layer. Thus, an integral film of uniform impurity density is formed from the first through third layers.

Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

Abstract: Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270.degree. C. to about 330.degree. C. while maintaining the mixture in a quiescent state; (2) maintaining the mixture at from about 270.degree. C. to about 330.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (3) subsequently heating the mixture from the range of from about 270.degree. C. to about 330.degree. C. to the range of from about 500.degree. C. to about 580.degree. C. while maintaining the mixture in a quiescent state; (4) maintaining the mixture at from about 500.degree. C. to about 580.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (5) thereafter maintaining the mixture at from about 500.degree. C. to about 580.degree.

Abstract: A process is disclosed for coating phosphors with hydrolyzed alkylaluminum. The hydrolyzed alkylaluminum coating renders the phosphors insensitive to atmospheric moisture. the coating process involves vaporizing an aluminum-containing precursor such as trimethylaluminum or triethylaluminum in an inert gas stream and passing this through a fluidized bed containing the phosphor particles. Water vapor is also passed through the fluidized bed and the water and aluminum precursor react on the surface of the phosphor particles to form hydrolyzed trimethylaluminum or other alkylaluminum. The hydrolyzed trimethylaluminum or other alkylaluminum phosphors are particularly useful in electroluminescent lamps.

Abstract: An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility.

Abstract: The method of making a bi-layer coating on phosphor particles is disclosed. The first layer surrounding the phosphor is silica. The second layer surrounding the phosphor is alumina. The bi-layer phosphor is useful in fluorescent lamps providing improved maintenance and brightness. The bi-layer phosphor can also be used in high color rendition lamps employing blends of phosphors.

Abstract: Disclosed is a method for applying a continuous protective coating to the surface of individual phosphor particles. The method involves chemical vapor deposition of an aluminum oxide coating on individual particles of a phosphor powder while the particles are suspended in a fluidized bed. The particles in the fluidized bed are exposed to vaporized coating precursor material, preferably aluminum isopropoxide at a temperature above 300.degree. C. The bed is kept at as nearly an isothermal condition as possible. Prior to entering the fluidized bed the aluminum isopropoxide is vaporized and kept at a temperature less than the decomposition temperature of aluminum isopropoxide. Mechanical means are used to help increase the fluidization efficiency of the fluidized bed. After coating the phosphor particles for approximately 30 minutes the vaporized precursor material is shut off from the bed entrance and the oxygen flow rate to the fluidized bed is increased.

Abstract: A method of manufacturing a phosphor screen of a cathode ray tube having processes of forming a phosphor material on an inner surface of a cathode ray tube, forming a first intermediate film on the phosphor material, forming a second intermediate film having a baking temperature different from that of the first intermediate film on an upper surface of the first intermediate film, forming a metal back layer on an upper surface of the second intermediate layer, and baking a product at a predetermined baking temperature. Also, a method of manufacturing a phosphor screen of a cathode ray tube is disclosed, which has processes of forming a phosphor material on an inner surface of a cathode ray tube, forming an organic acid film on the phosphor material, forming an intermediate film on an upper surface of the organic acid film, forming a metal back layer on an upper surface of the intermediate layer, and baking a product at a predetermined baking temperature.

Abstract: A method whereby the thickness distribution of a vapor deposited layer, such as an interference filter deposited on a skirted substrate such as a glass faceplate for a projection television tube, is improved by shielding the substrate from indirect flux of vapor so as to reduce the shadowing effect of the skirt upon the thickness distribution of the deposited layer, thereby improving the white field uniformity of the resultant projection image.

Abstract: Disclosed is a method for applying a continuous protective coating to the surface of individual phosphor particles. The method involves chemical vapor deposition of an aluminum oxide coating on individual particles of a phosphor powder while the particles are suspended in a fluidized bed. The particles in the fluidized bed are exposed to vaporized coating precursor material, preferably aluminum isopropoxide at a temperature above 300.degree. C. The bed is kept at as nearly an isothermal condition as possible. Prior to entering the fluidized bed the aluminum isopropoxide is vaporized and kept at a temperature less than the decomposition temperature of aluminum isopropoxide. Mechanical means are used to help increase the fluidization efficiency of the fluidized bed. After coating the phosphor particles for approximately 30 minutes the vaporized precursor material is shut off from the bed entrance and the oxygen flow rate to the fluidized bed is increased.

Abstract: The invention relates to volatile mixed metal alkoxides of the formula M'.sub.x M.sub.y Cu.sub.z (OR).sub.x+2(y+z) wherein M is selected from the group consisting of Ba, Sr, and Ca, M' is an alkali metal, x=0-6, y=0-4 and z=1 to 6, and x and y are not 0 at the same time, and R is selected from the group consisting of CMe.sub.3, CMe.sub.2 Et, CMeEt.sub.2, CMe.sub.2 Pr, CMeEtPr, CEt.sub.3 or combinations of these substituents. Volatile alkoxides of Y and Cu are known. These volatile alkoxides can be used in a CVD process where stoichiometric quantities of the material are sublimated, transported to a substrate and decomposed to an oxide with or without the presence of oxygen. The oxides are then treated in a known manner to produce the superconducting film.