Abstract: A multi-layered phase-change optical recording medium having a first substrate and a second substrate, and a plurality of information layers, wherein each of thermal diffusion layers of information layers other than an information layer disposed at the innermost side as viewed from the first substrate side has In oxide, Zn oxide, Sn oxide and Si oxide, and when the contents of thereof are represented by “a”, “b”, “c” and “d” [mol %] respectively, the following requirements are satisfied, and when the refractive index of the first and second substrates was represented by “n”, the laser light wavelength is represented by “?” and the depth of the groove guide of the first and second substrates is represented by H, the H satisfied the following requirement, 3?a?50 0?d?30 a+b+c+d=100 ?/17n?H??/11.5n.

Abstract: An optical recording medium having first protective layer, recording layer, second protective layer, and reflective layer, wherein the recording layer contains a phase-change material represented by Formula (1?1), Formula (1-2), or Formula (1-3); the second protective layer contains one selected from zinc oxides, indium oxides, tin oxides, mixtures thereof, and materials Formula (2), and materials Formula (3). Formula (1?1): In?iSb?iX1?i(X1: Ge, Te, Zn, Mn, or mixture thereof, 0.10??1?0.25, 0.65??1?0.80, and 0.04??1?0.15) Formula (1-2): Ga?2Sb?2SnY2Ges2X2?2 (X2: Te, Zn, Mn, In, or mixture thereof, 0.04??2?0.09, 0.56?62?0.79, 0.05??2<0.30, 0.03??2?0.19, and 0??2?0.09) Formula (1-3): Mn?3Sb?3SnY3Ge?3X3?3 (X3: Te, In, Zn, Bi, or mixture thereof, 0.04??3?0.09, 0.56?63?0.79, 0.05??3?0.29, 0.03??3?0.23, and 0??3?0.09) Formula (2): ZnO—Al—Y [(100??4?64):?4:?4] (Y: Mn, Ge, Ti, or mixture thereof, 0.5??4?10.0, and 0?B4?25.

Abstract: An optical recording medium is an optical recording medium having an inorganic recording film and has a transparent conductive film on the inorganic recording film. The inorganic recording film has a first recording film containing titanium (Ti) and a second recording film containing an oxide of germanium (Ge). The transparent conductive film is provided on the side of the second recording film. The transparent conductive film contains an oxide of tin (Sn).

Abstract: An information recording medium, 15 capable of recording information by irradiation of light or applying electrical energy, wherein at least one of first and second dielectric layers 102, 106, first interface layer and counter-incident side interface layer 103, 105 is formed from a Si—In—Zr/Hf—O-based material containing at least Si, In, M1 (M1 represents at least one element selected from among Zr and Hf) and oxygen (O), with Si content being 1 atomic % or more. This medium has high recording sensitivity when information is recorded thereon, high overwrite cycle-ability and high signal intensity.

Abstract: The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.

Abstract: A two-layered optical recording medium which includes a first substrate, a first information layer, a second information layer, and a second substrate formed in this order as viewed from the light beam irradiation side, the first information layer includes a first lower dielectric layer, a first recording layer, a first upper dielectric layer, a first reflective layer, and an inorganic dielectric layer formed in this order as viewed from the light beam irradiation side; the second information layer includes a second lower dielectric layer, a second recording layer, a second upper dielectric layer, and a second reflective layer formed in this order as viewed from the light beam irradiation side; and the first reflective layer is made of Cu with a content of 99.8% by mass to 95.0% by mass and one or more metals selected from Ta, Nb, Zr, Ni, Cr, Ge, Au, and Mo.

Abstract: An information recording medium of the present invention includes a recording layer whose phase changes by irradiation with a laser beam or application of current. The recording layer contains, as its main component, a composite composed of Ge and Sb that are essential components, and Te that is an optional component. The composite has a composition within a region enclosed by: point (a) (35, 65, 0), point (b) (36.9, 60, 3.1), point (c) (3.2, 60, 36.8), and point (d) (5, 95, 0) in terms of a coordinate (Ge, Sb, Te)=(x, y, z) on the triangular coordinate shown in FIG. 1, where point (b) corresponds to a point at Sb=60 on Ge60Te40—Ge35Sb65, point (c) corresponds to a point at Sb=60 on Te—Ge5Sb95, and the region includes lines extending between point (a) and point (b), point (b) and point (c), point (c) and point (d), and point (d) and point (a).

Abstract: An optical information recording medium having the same recording volume as that of DVD-ROM is obtained which shows excellent characteristics at recording linear velocities within a range of twice linear velocity of DVD (about 8.2 m/s) to five times liner velocity of DVD (about 20.5 m/s) and excellent archival stability, by a construction including a transparent substrate, a recording layer which is formed on the substrate directly or with another layer interposed therebetween and can change in phase reversibly by a laser beam irradiation, wherein the composition of the recording layer is within a region bounded by composition points A(41.2, 7.4, 51.4), B(39.8, 10.5, 49.7), C(28.5, 21.7, 9.8), and D(30.6, 15.8, 53.6) in a triangular coordinate graph represented with a coordinate of (Ge, Sb—Bi, Te) and a Bi content in the recording layer is 4 atom % and more and less than 13 atom %.

Abstract: An optical information recording medium that can simultaneously achieve both a high transmittance and high signal quality of an information layer, improve the reliability of long-term conservation, and reduce the manufacturing cost, and a manufacturing method thereof are provided. In an optical information recording medium including at least one information layer on a substrate, at least one of the information layers has a recording layer and a dielectric layer, the recording layer contains Te, O, and M (M is one or a plurality of elements selected from Au, Pd, and Pt) as major components, the dielectric layer has a thermal conductivity of 0.01 W/K·cm or more, and the dielectric layer has an extinction coefficient of 0 through 1.0 inclusive.

Abstract: The information recording medium of the present invention is provided with a substrate and an information layer including a recording layer. Rerecording and reproducing of information are performed by irradiating the information layer with a laser beam. The recording layer contains, as its main component, a material composed of Te, O, and M, where M denotes at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au. In the material, the content of Te atom is 1 to 19 atom %, the content of O atom is 20 to 70 atom % (preferably 40 to 70 atom %), the content of M atom is 11 to 79 atom % (preferably 11 to 59 atom %, and more preferably more than 35 atom %). The material is, for example, is indicated as the region enclosed by A, B, C, and D, preferably by C, D, E, and F, and more preferably by E, F, H, and G, in the composition diagram of a ternary material of Te—O—Pd shown in FIG. 1.

Abstract: An information recording medium of the present invention includes recording layers 19 and 26 whose phase can change by an optical or an electrical system so as to be detectable, and interface layers 18, 20, 25 and 27, which are in contact with the recording layers 19 and 26, to serve as oxide layers. The recording layer 19 contains a Ge—Bi—Te-M material represented by a formula: Ge?Bi?Te?M100-?-?-? (atom %), where M denotes at least one element selected from Al, Ga, In and Mn, and ?, ? and ? satisfy 25???60, 0<??18, 35???55, and 82??+?+?<100. The interface layers 18, 20, 25 and 27 contain at least one oxide of the element M contained in the recording layers 19 and 26.

Abstract: A write-once information recording medium having a high recording sensitivity and reliability with respect to long-term storage is provided. The information recording medium has a recording layer on a substrate, to which information can be recorded and from which information can be reproduced by irradiating the recording layer with laser light or applying electrical energy to the recording layer. The recording layer contains, as its primary components, TeO2 and a material A, where the material A is a material that exhibits a eutectic reaction with TeO2.

Abstract: A next-generation optical recording medium has two or more information layers which include a translucent information layer. The translucent information layer has a recording film and an interface layer, provided adjacent to the recording film on the side of the light incident surface. The recording film is made of a phase change material having SbxTeyGez elements and elemental ratios. Y satisfies 5?y?15 and z satisfies 5?z?15. When In having an elemental ratio of a is further added and x+y+z+a=100 holds, a satisfies 4?a?15. The interface layer comprises of ZrO2—Cr2O3 film thickness of which is in a range of from 2 nm to 10 nm. When ZrO2:Cr2O3?C:D (mol %), the compositional ratios ZrO2 and Cr2O3 in the ZrO2—Cr2O3 film, holds, the C satisfies 20?C?90, and the D satisfies 10?D?80, and the C and the D satisfy C+D=100. The ZrO2 is stabilized ZrO2 which contains Y2O3, when ZrO2:Y2O3=(100?X):X (mol %), the compositional ratios ZrO2 and Y2O3 in the stabilized ZrO2, holds, the X satisfies 2?X?10.

Abstract: An information recording medium (300) of the present invention is an information recording medium on or from which information can be recorded or reproduced by irradiation with an optical beam (10), and includes a dielectric layer b, a recording layer (335), and a dielectric layer a in this order from an optical beam (10) incident side. The dielectric layer a and the dielectric layer b are layers disposed in contact with the recording layer (335), and an interface layer (334) corresponds to the dielectric layer a and an interface layer (336) corresponds to the dielectric layer b. The dielectric layer a contains Cr, O, and at least one element M selected from Al, Dy, Nb, Si, Ti and Y. The dielectric layer b contains Cr, O, and at least one element A selected from Zr and Hf.

Abstract: In each of at least two information layers (1, 2) which constitute a information recording medium having a plurality of information layers on its one side, the compositions of the recording layer (7) and the dielectric layers (6, 8) adjacent to the recording layer (7) in one information layer (1) are common to the compositions of the corresponding layers (12, 11, 13) in the other information layer, so that the recording layers (7, 12) and the dielectric layers (6, 11) and (8, 13) in the two information layers (1, 2) can be formed in common sputtering film-forming chambers without the replacement of targets, which makes it possible to produce a multi-layer single-sided recording medium with a decreased time loss in the production process.

Abstract: An optical recording medium is provided which includes two or more information layers in which an Sb-based eutectic material is used as the material for a recording film of a translucent information layer. There is also provided a recording film material for the optical recording medium. The translucent information layer is configured to include a recording film formed of a phase change material SbxGeyInz containing Sb, Ge, and In in an atomic ratio of x:y:z, where 5?y?15 and 4?z?15 are satisfied. The recording film further includes Te in an atomic ratio of a, provided that x+y+z+a=100 and 4?a?15 are satisfied. An interface layer formed of a ZrO2—Cr2O3 film having a thickness of 2 nm or more and 10 nm or less is provided on the laser beam incident side of the recording film. When the compositional ratio of the ZrO2—Cr2O3 film is given by ZrO2:Cr2O3=B:C (mol %), 20?B?90, 10?C?80, and B+C=100 are satisfied.

Abstract: The invention relates to a master substrate, a method for making a high density relief structure, and optical discs replicated with the high-density relief structure, the master substrate comprising a substrate layer (10) and a recording stack deposited on the substrate layer, the recording stack comprising:—an information layer (12),—an interface layer (11) sandwiched between said information layer and the substrate , forming marks and spaces representing an encoded data pattern, wherein said recording material is an alloy comprising at least two materials of the group of materials containing Ge, Sb, Te, In, Se, Bi, Ag, Ga, Sn, Pb, As. A very high-density relief structure is achieved.

Abstract: A compatible optical recording medium is described, which is designed in such a way that it has the appearance of a read-only optical recording medium for most players and recorders. Further described is a method for manufacturing the recordable optical recording medium. The optical recording medium has an essentially flat recording layer with a first reflectivity at a wavelength specified for a reading recording light beam, which has an alloyed guide track formed of the material of the essentially flat recording layer with a second reflectivity different from the first reflectivity at the specified wavelength.

Abstract: A thin film for a reflection film or a semi-transparent reflection film, which has a compound phase comprising at least one selected from the group consisting of a nitride, an oxide, a complex oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide, a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of gallium, palladium or copper, dispersed in a matrix formed of silver or a silver alloy. The compound phase in the thin film may include at least one compound selected from the group consisting of nitride, oxide, complex oxide, nitroxide, carbide, sulfide, chloride, silicide, fluoride, boride, hydride, phosphide, selenide and telluride of silver. The thin film of the present invention minimizes the deterioration of the reflectance even after a long period of use, and can prolong the life of various devices which use the thin film as a reflection film, such as an optical recording medium and a display.

Abstract: The present invention provides an information recording medium with high reliability and excellent repeated rewriting performance even when no interface layer is formed and a method for manufacturing the same. Accordingly, the information recording medium for carrying out recording and/or reproducing by light irradiation or electric energy application has a material layer containing at least one element selected from a group GM consisting of Sn and Ga, at least one element selected from a group GL consisting of Ta and Y, and oxygen.

Abstract: There is provided a dielectric material containing no sulfur (S), and there is provided an information recording medium that affords high signal quality and excellent recording sensitivity and repeated rewrite characteristics, even though no interface layer is provided between a reflective layer and a dielectric layer. To this end, the present invention is an information recording medium that is equipped with at least a recording layer and undergoes phase change when the recording layer is irradiated with a laser beam or when current is applied, comprising an oxide-fluoride dielectric layer that includes indium (In), an element M1 (where M1 is at least one element selected from among Zr, Hf, Y, Ti, Nb, Ta, Cr, Ga, and Si), oxygen (O), an element M2 (where M2 is at least one element selected from among La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Yb, Mg, Ca, and Sr), and fluorine (F).

Abstract: An information recording medium ensuring high recording and erase function and excellent archival characteristic at a high linear velocity and over a wide range of linear velocities is provided. Such a medium is obtained by constructing a recording layer which has a composition that can generate phase change as a whole, of a first through an M-th constituent layers (wherein M is an integer of 2 or greater) which are stacked in a thickness direction, such that elemental compositions of contiguous an m-th constituent layer and a (m+1)th constituent layer are different from each other (wherein m is an integer and satisfies 1?m?M) assuming that the constituent layer located at an m-th position from a laser light incident side is the m-th constituent layer. In this information recording medium, at least one m-th constituent layer constituting the recording layer preferably includes at least one element selected from Te, Bi, Sb, Ge, In, Ga, Al, Sn, Pb, Se and Si.

Abstract: A rewritable optical recording medium including: a substrate having a guide groove formed thereon, a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam. The phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %, and in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1:3 to 1:20.

Abstract: According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Abstract: An information recording medium with high recording sensitivity, superior repeat overwriting capability and favorable signal storage stability during information recording is offered. For this purpose, an information recording medium comprises one or more information layers that include a phase-change recording layer, wherein at least one of the information layers includes, a Cr-containing layer containing Cr and O that contact with one side of a surface of the recording layer, and an In-containing layer containing In and O that contact with the other side of the surface of the recording layer.

Abstract: An information recording medium ensuring high recording and erase function and excellent archival characteristic at a high linear velocity and over a wide range of linear velocities is provided. Such a medium is obtained by constructing a recording layer which has a composition that can generate phase change as a whole, of a first through an M-th constituent layers (wherein M is an integer of 2 or greater) which are stacked in a thickness direction, such that elemental compositions of contiguous an m-th constituent layer and a (m+1)th constituent layer are different from each other (wherein m is an integer and satisfies 1?m?M) assuming that the constituent layer located at an m-th position from a laser light incident side is the m-th constituent layer. In this information recording medium, at least one m-th constituent layer constituting the recording layer preferably includes at least one element selected from Te, Bi, Sb, Ge, In, Ga, Al, Sn, Pb, Se and Si.

Abstract: An information recording medium (1) of the present invention is an information recording medium allowing information to be recorded thereon by irradiation with a laser beam or by application of electrical energy. The information recording medium (1) includes a recording layer (15) capable of undergoing a phase change by the irradiation with the laser beam or by the application of the electrical energy. The recording layer (15) contains Sb, Te, Ge, and C, and a content of Te in the recording layer (15) is at least 8 atom % but not more than 25 atom %.

Abstract: In an information recording medium including a substrate and an information layer having a recording layer, on and from which information is recorded and reproduced by laser beam application, the recording layer is made from a Te—O-MA-MB material consisting of Te, O, MA (wherein MA is at least one element selected from Au and Pd) and MB (wherein MB is at least one element selected from Ag, Cu and Ni) with a content of Te of 10 atom % to 50 atom %, the content of O of 40 atom % to 70 atom %, the content of MA of 3 atom % to 15 atom %, and the content of MB of 3 atom % to 15 atom %. This constitution provides a low-cost information recording medium which enables high-density recording and stable reproduction of recorded data for a long period of term.

Abstract: The recordable optical storage medium comprises a substrate layer, a data layer and a first and a second protection layer for the data layer, wherein the data layer comprises a semiconductor layer and a dopant layer with a doping material usable for doping the semiconductor layer.

Abstract: A phase change optical disk includes a first dielectric film, a recording film, a second dielectric film and a reflecting film which are consecutively formed on a substrate. The second dielectric film includes therein a zinc sulfide at a rate of 10 to 40 mol % and a tantalum oxide at a rate of 20 to 50 mol %, for preventing sulfuration of Ag in the reflecting film.

Abstract: A thin film for reflective film or semi-reflective film comprising a matrix of silver or silver alloy and, dispersed therein, a compound phase of at least one member selected from among aluminum, magnesium, tin, zinc, indium, titanium, zirconium, manganese and silicon nitrides, oxides, composite oxides, nitroxides, carbides, sulfides, chlorides, silicides (excluding silicon), fluorides, borides, hydrides, phosphides, selenides and tellurides. In this thin film, in addition to the above aluminum, etc., there may be dispersed at least one member selected from among silver, gallium, palladium and copper nitrides, oxides, composite oxides, nitroxides, carbides, sulfides, chlorides, silicides, fluorides, borides, hydrides, phosphides, selenides and tellurides.

Abstract: An optical information recording medium includes: a supporting substrate; a light-transmitting protective layer which becomes a layer on the incident side of recording and reproducing laser light; and an information recording layer intervening between the supporting substrate and the light-transmitting protective layer, wherein the information recording layer includes a phase-change material layer, a dielectric layer and a metal layer in this order from the incident side of laser light; and the dielectric layer is constituted of, as a main component, (In2O3)x(SnO2)1-x wherein x is satisfied with the relationship of (0.4<x?0.7).

Abstract: An optical data storage medium comprises at least one active layer of inorganic material, that is able to undergo local deformations during write operations. The active layer presents a front face which is designed to receive an optical radiation at least during read operations. The support also comprises a thin tin and tellurium based alloy layer forming a semi-reflective layer disposed on the front face of the active layer.

Abstract: Disclosed herein is an optical recording medium, including: a substrate; and an information recording layer formed on the substrate, an information signal being recorded and reproduced in and from the information recording layer by radiation of a light; wherein the information recording layer includes a reflecting layer, a dielectric layer formed on the reflecting layer, and a recording layer formed on the dielectric layer, the dielectric layer includes a first dielectric layer and a second dielectric layer, and a thermal conductivity of the second dielectric layer located on the reflecting layer side is higher than that of the first dielectric layer located on the recording layer side.

Abstract: A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).

Abstract: The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.

Abstract: Disclosed is a honeycomb ceramic article that exhibits a primary crystalline phase of cordierite having a coefficient of thermal expansion (CTE), wherein CTE<1.5×10?7/° C. over the temperature range of about 25° C. to about 800° C.; a total porosity, P, of at least 28%, a transverse I-ratio, IT, of less than 0.92; and a pore size distribution wherein at least 60% of the total pore volume is comprised of pores having diameters between 0.5 ?m and 5.0 ?m. Also provided is a ceramic honeycomb article comprising a phase of cordierite and exhibiting a mean CTE <1.0×10?7/° C. (from 25 to 800° C.) in at least one direction, and 28%?P?33%. Methods of manufacturing ceramic articles comprising the aforementioned cordierite compositions are also disclosed.

Abstract: An optical information recording medium (9) of the present invention is an optical information recording medium including: N information layers, where N is a natural number of 2 or more; and an intermediate layer for separating the N information layers optically from each other. With the N information layers being referred to as a first information layer (10) to an N-th information layer (7) sequentially from an optical beam incident side, a first information layer (10) corresponding to an L-th information layer included in the N information layers includes a recording layer (104) on which information can be recorded by irradiation with an optical beam, a reflective layer (108), and a transmittance adjusting layer (109) in this order from the optical beam incident side, where L is an at least one natural number that satisfies 1?L?N?1. The transmittance adjusting layer (109) contains tungsten (W) and oxygen (O).

Abstract: In each of at least two information layers (1, 2) which constitute a information recording medium having a plurality of information layers on its one side, the compositions of the recording layer (7) and the dielectric layers (6, 8) adjacent to the recording layer (7) in one information layer (1) are common to the compositions of the corresponding layers (12, 11, 13) in the other information layer, so that the recording layers (7, 12) and the dielectric layers (6, 11) and (8, 13) in the two information layers (1, 2) can be formed in common sputtering firm-forming chambers without the replacement of targets, which makes it possible to produce a multi-layer single-sided recording medium with a decreased time loss in the production.

Abstract: In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

Abstract: An optical recording medium is provided. The optical recording medium includes a first recording layer and a second recording layer. The second recording layer includes a compound in the form of (CuXM(1-X))YO(1-Y), where M is one of Sn, Si, Zn, Al, Mg, Ge, Sb or Te, and X is approximately 0.5 to 1, and Y is approximately 0.001 to 0.1.

Abstract: An optical recording medium is provided. The optical recording medium includes a first recording layer and a second recording layer. The first recording layer includes a compound in the form of M(1?x)Ox, where M is one of Si, Zn or Sn, and X is approximately 0.001 to 0.1.

Abstract: In an information recording medium on and from which information is recorded and reproduced by applying light or electric energy, a recording layer which generates reversible phase change is formed so as to include a material containing Ge, Bi, Te and an element “M” which material is expressed with (GeTe)x[(M2Te3)y(Bi2Te3)1-y]100-x (mol %) wherein “M” represents at least one element selected from Al, Ga and In, and “x” and “y” satisfy 80?x<100 and 0<y?0.9, whereby the medium is obtained which ensures a high erasability and an excellent archival characteristic at a high linear velocity and in a wide range of linear velocities.

Abstract: Optical information media having a support substrate and an inorganic nanomaterial data layer are disclosed. The data layer provides enhanced stability and optical performance as compared to conventional data layers.

Abstract: The optical recording medium according to one embodiment of the present invention includes a substrate, a reflective layer located on the upper side of the substrate and reflecting an incident laser beam, and an information recording layer located on the reflective layer. The information recording layer includes a first recording layer containing a compound in the form of AXB1-X (0.8?X?0.9), wherein A is Ag and B is Sb and Te, and a second recording layer containing at least one element selected from the group consisting of Si, Sn, Sb and Ge. The laser beam is irradiated on the first recording layer prior to the second recording layer. Therefore, the optical recording medium of the present invention may provide high recording density and transmittance velocity suitable for BLU-RAY DISC system.

Abstract: A low-cost information recording medium is provided by which good recording quality can be obtained even when high-density is made using a blue laser. The information recording medium on or from which information can be recorded and reproduced by irradiating the recording layer with laser beam is configured so that the content of O atoms is 20 atom % or more but 70 atom % or less, the content of M atoms is 1 atom % or more but 50 atom % or less and the content of Sb atoms is 10 atom % or more but 70 atom % or less when total number of the Sb atoms, the O atoms and the M atoms contained in the recording layer is 100 atom % and the recording layer does not contain Au, Pt and Pd.

Abstract: The optical recording medium comprises an active layer made of inorganic material, presenting a front face for receiving an optical radiation during writing operations, and a rear face. The inorganic material is a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium. The alloy comprises preferably 65% of zinc and 35% of tellurium. The medium may comprise a semi-reflecting layer arranged on the front face of the active layer and/or an additional metal layer arranged on the rear face and/or a protective layer of polymer material on the rear face. Thus, writing powers, a mark resolution and a storage density corresponding to DVD format specifications may be achieved.

Abstract: A rewritable phase change optical recording medium includes a substrate, a dielectric layer deposited on a surface of the substrate, and an optical recording layer deposited on the dielectric layer, wherein the dielectric layer may be omitted. The optical recording layer contains a composition of GexSb100-x-y-zMyEz, wherein 0.5?x?14.5; 0.5?y?14.5; 0?z?14.5; and M and E are different and are selected from the group consisting of Te, Cr, V, Ti, Ag, Sn, Si, Bi, Se, Al, Au, Ni, Fe, Cu, Mn, O, Ga, Cd, In, Pb and Hf, wherein M is not Te, when x is zero; and E is not Sn, when M is Te. The optical recording composition has a small crystal grain, a high ratio of reflectivity of the amorphous phase to that of the crystalline phase thereof, and a high crystallization rate, so that a blue light laser can be used to write/erase the recording medium.

Abstract: An information recording medium with high recording sensitivity and superior repeat overwriting capability. The information recording medium (15) comprising at least recording layer (104) recording and/or reproducing information through irradiation with a laser beam or application of an electric current, and second dielectric layer (106) on substrate (14), wherein the second dielectric layer (106) comprises M1 (provided that M1 is at least one element selected from Sc, Y, La, Gd, Dy and Yb) and O.

Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention, consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atoms each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.