Abstract: There is provided a positive resist composition excellent in transparency, heat resistance, and refractive index particularly for forming a microlens and for forming a planarization film; and a microlens and a planarization film formed from the positive resist composition. A positive resist composition comprising a component (A): an alkali-soluble polymer comprising a unit structure having a biphenyl structure; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; and a component (C): a solvent. The positive resist composition wherein the alkali-soluble polymer as the component (A) is a polymer comprising a unit structure of Formula (1): where when the total number of unit structures constituting the polymer (A) is assumed to be 1.0, the ratio n1 of the unit structure of Formula (1) constituting the polymer (A) satisfies 0.3?n1?1.0.

Abstract: A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin prepared by a phosphorous-containing diamine represented by the following Chemical Formula 1, (B) a photosensitive diazoquinone compound, and (C) a solvent. A photosensitive resin film prepared using the same and a semiconductor device including the photosensitive resin film are also disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin; (B) a novolac resin including a repeating unit represented by Chemical Formula 6; (C) a photosensitive diazoquinone compound; (D) a silane compound; and (E) a solvent, a photosensitive resin film prepared by using the positive photosensitive resin composition, and a semiconductor device including the photosensitive resin film.

Abstract: A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.

Abstract: The present invention relates to a photosensitive resin composition, which comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photoinitiator (C), ortho-naphthoquinone diazide sulfonic acid ester (D), a thermal initiator (E) and a solvent (F). The photosensitive resin composition added with the ortho-naphthoquinone diazide sulfonic acid ester (D) and the thermal initiator (E) can have excellent resolution and development adherence. Moreover, the present invention further provides a spacer or a protective film formed by the aforementioned photosensitive resin composition, as well as a liquid crystal display device (LCD) including the aforementioned spacer or protective film.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) at least one dissolution controlling agent selected from a compound including a repeating unit represented by the following Chemical Formula 1, a compound including a repeating unit represented by the following Chemical Formula 2, or a combination thereof, (B) a polybenzoxazole precursor, (C) a photosensitive diazoquinone compound, and (D) a solvent. An organic insulator film for a display device manufactured using the same and a display device are also disclosed. In Chemical Formulae 1 and 2, each substituent is the same as defined in the detailed description.

Abstract: A material for a microlens having heat resistance, high resolution and high light-extraction efficiency is provided. A positive resist composition comprises an alkali-soluble polymer containing a unit structure having an aromatic fused ring or a derivative thereof, and a compound having an organic group which undergoes photodecomposition to yield an alkali-soluble group. The positive resist composition has coating film properties of a refractive index at a wavelength of 633 nm of 1.6 or more and a transmittance at wavelengths of 400 to 730 nm of 80% or more. A pattern forming method comprises applying the positive resist composition, drying the composition, exposing the composition to light, and developing the composition.

Abstract: The invention relates to a photosensitive polysiloxane composition that has good thermal transmittance, good chemical resistance and good sensitivity and good refractivity. The invention also provides a method for forming a thin film on a substrate, a thin film on a substrate and an apparatus.

Abstract: A photoresist composition including a binder resin including a novolac resin represented by Chemical Formula 1, a diazide photosensitive initiator, and a solvent including a base solvent and an auxiliary solvent, wherein the base solvent includes propylene glycol monomethyl ether acetate, and the auxiliary solvent includes dimethyl-2-methylglutarate and ethyl beta-ethoxypropionate, wherein in Chemical Formula 1, R1 to R9 are each independently a hydrogen atom or an alkyl group, “a” is an integer number from 0 through 10, “b” is an integer number from 0 through 100, and “c” is an integer number from 1 through 10.

Abstract: A photosensitive polysiloxane composition for forming a protective film having superior sensitivity is disclosed. A protective film formed from the photosensitive polysiloxane composition and an element including the protective film are also disclosed. The photosensitive polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonic acid ester, a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule, and a solvent.

Abstract: Disclosed are a positive photosensitive resin composition that includes (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a phenol compound, (D) at least one organic dye having an absorption wavelength of about 400 nm to about 700 nm, and (E) a solvent, wherein the organic dye (D) is included in an amount of about 1 to about 40 parts by weight based on about 100 parts by weight of the alkali soluble resin (A), and a photosensitive resin layer and a display device using the same.

Abstract: Disclosed is a positive-type photosensitive resin composition which has excellent storage stability, particularly excellent sensitivity stability, and can be formed into a cured film having excellent adhesion onto a substrate when heated at 350° C. or higher or heated in the air. The positive-type photosensitive resin composition comprises (a) a polymer having, as the main component, at least one structure selected from the group consisting of a polyimide precursor structure, a polybenzoxazole precursor structure, and a polyimide structure, (b) a quinonediazide compound, (c) a silane coupling agent having a styryl group, (d) a silane coupling agent having an epoxy group, an oxetanyl group, a methacryloxy group, an acryloxy group, an amino group, an amide group or mercapto group and an alkoxysilyl group, and (e) a solvent.

Abstract: Disclosed are: a photosensitive modified polyimide resin composition having photo-fabrication property, which is excellent in the electric properties and adhesion as well as in the heat resistance, flexibility, bending property, low warping, chemical resistance and storage stability; a resin film formed from the composition; and a printed circuit board, flexible printed circuit board (FPC) and the like which comprises the film as an insulating protective film and/or interlayer insulation film. The photosensitive modified polyimide resin composition comprises a modified polyimide of a specific structure having a flexible structure such as polycarbonate; a photosensitizer; a curing agent; and a solvent.

Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin.

Abstract: Polymeric materials, methods for making the polymeric materials, and photoresist formulations utilizing the polymeric materials are disclosed. In one aspect, a polymeric material is provided including a condensation product of a reaction mixture comprising an aldehyde with a phenolic monomer composition comprising m-cresol, p-cresol, 3,5-dimethyl phenol, and 2,5-dimethyl phenol. The polymeric material may be further contacted with a photoactive compound and a solvent to form a photoresist formulation.

Abstract: Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.

Abstract: Disclosed is a photosensitive novolac resin including a structural unit represented by the following Chemical Formula 1 and structural unit represented by the following Chemical Formula 2, wherein R11, R12, R13, and R14 in Chemical Formulae 1 and 2 are the same as defined in the detailed description, a positive photosensitive resin composition including the same, a photosensitive resin film fabricated using the same, and a semiconductor device including the photosensitive resin composition.

Abstract: The present invention relates to a positive photosensitive polyimide composition that includes polyimide, a polyamic acid, and a photoactive compound. An organic insulating layer for organic light-emitting devices (OLED), which includes the positive photosensitive polyimide composition, may control a taper angle and outgassing, and has excellent adhesion in respects to a substrate, water repellent control ability, and storage stability and the like.

Abstract: A negative-type photosensitive resin composition which is good in sensitivity and resolution, a pattern forming method by the use thereof wherein a pattern which can be developed in an alkali aqueous solution, is excellent in sensitivity, resolution and heat resistance and has a good shape is obtained, and highly reliable electronic parts are provided. The negative-type photosensitive rein composition includes (a) a polymer that has a phenolic hydroxyl group at a terminal and is soluble in the alkali aqueous solution, (b) a compound that generates an acid by irradiating active light, and (c) a compound that can be crosslinked or polymerized by an action of the acid.

Abstract: Embodiments in accordance with the present invention encompass self-imageable film forming compositions that comprise norbornene-type polymers and that can be formulated to be either positive tone imaging or negative tone. The films formed thereby are useful in the forming of microelectronic and optoelectronics devices.

Abstract: Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin including a polybenzoxazole precursor, a polyimide precursor, or a combination thereof, (B) a photosensitive diazoquinone compound, (C) a compound represented by the following Chemical Formula 1, and (D) a solvent, and a display device and an organic light emitting device using the same. The Chemical Formula 1 is the same as defined in the detailed description.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: The resin composition of the present invention is a resin composition characterized by including (a) a polyimide, a polybenzoxazole, a polyimide precursor or a polybenzoxazole precursor, (b) 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, or 2,3-dihydroxynaphthalene, and (c) a thermal cross-linking agent having a specific structure. By the use of the resin composition of the present invention, it is possible to reduce the transmittance in the visible region of a cured film while maintaining the transmittance of a resin film before curing.

Abstract: A positive photosensitive resin composition includes: (A) a polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a polyamic acid ester compound; and (E) a solvent. The positive photosensitive resin composition can reduce film shrinkage, can have high sensitivity, high resolution, and excellent residue removal properties, and can provide good pattern shapes.

Abstract: Disclosed are a novel phenol compound comprising a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, and a positive photosensitive resin composition including the same.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.

Abstract: The present invention is related to a photosensitive resin composition containing: a vinyl-based copolymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group and a carboxyl group-containing vinyl monomer (b); a quinonediazide compound (II) and a compound (III) represented by the following formula (5), and to a photosensitive dry film and a method for forming a patter by using the photosensitive resin composition.

Abstract: A photosensitive resin composition comprising: a vinyl-based polymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group; a vinyl-based polymer (II) obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b), and having a weight average molecular weight of 20,000 to 100,000, provided that the vinyl-based polymer (I) is excluded; a quinonediazide compound (III); and a compound (IV) represented by following formula (5). [In the formula, Y is a hydrocarbon group of 1 to 6 carbon atoms; l and m are each independently an integer of 1 to 3; n is 1 or 2; p and q are each independently 0 or 1.].

Abstract: A positive photosensitive resin composition according to one embodiment of the present invention includes a polyamic acid or a polyamic acid ester compound including a repeating unit represented by Formula 1 defined in this specification, a photosensitive diazoquinone compound, a silane compound, a phenol compound, and a solvent. The positive photosensitive resin composition can be cured at a low temperature of 260° C. or less, and can have high sensitivity, resolution, residue removal, substrate adherence, and pattern-forming capabilities, and low film shrinkage.

Abstract: The present invention relates to a radiation sensitive resin composition comprising [A] an alkali-soluble resin, [B] a 1,2-quinonediazide compound and [C] a radical trapping agent. The radiation sensitive resin composition can provide an interlayer insulating film which satisfies general requirements for an interlayer insulating film such as high light transmittance and has excellent heat-resistant dimensional stability, heat discoloration resistance and adhesion to a substrate along with the improvement of process efficiency for improving product yield at a high resolution and has excellent storage stability.

Abstract: The present invention provides novel diazonaphthoquinonesulfonic acid bisphenol derivatives. More particularly, the present invention relates to photo restive coating comprising alkali-soluble resin, a photoactive compound and a surfactant. The photoresist film prepared has less then one micron. The photoactive compound is soluble or swellable in aqueous alkaline solutions and is diazonaphthoquinonesulfonic bisphenol esters of the general formula (A), wherein DNQ represents a 2-Diazo-1-naphthoquinone-4-sulfonyl, 2-Diazo-1-naphthoquinone-5-sulfonyl, 1-Diazo-2-naphthoquinone-4-sulfonyl groups and R1 R1 represents an alkyl, aryl and substituted aryl groups. The invention also provides a process for coating and imaging the light-sensitive composition.

Abstract: Embodiments in accordance with the present invention provide for norbornane-type ballast materials, norbornane-type photoactive compounds derived from such ballast materials and alkali-soluble positive-tone polymer compositions that encompass such norbornane-type photoactive compounds and one of a PBO or PNB resin.

Abstract: A positive photosensitive resin composition includes (A) a polybenzoxazole precursor resin, (B) a photosensitive diazoquinone compound, (C) a hindered phenol antioxidant shown by the following general formula (1), and (D) a phenol compound shown by the following general formula (2). Formula (1) is: wherein R1 represents a hydrogen atom or an organic group having 1 to 4 carbon atoms, a is an integer from 1 to 3, and b is an integer from 1 to 3. Formula (2) is: wherein R2 represents a methylene group or a single bond, c is an integer from 1 to 3, and d is an integer from 1 to 3. A protective film, an interlayer insulating film, and a semiconductor device and a display element using the same are also disclosed.

Abstract: A method of fabricating a thin film pattern improve the life of a blanket and reduce the cost and improve reliability in forming the thin film pattern. The method includes injecting an etch resist solution into a blanket on a printing roller, wherein the etch resist solution includes a printing solvent that satisfies the condition 6>?solvent or ?solvent>11, where ?solvent is the solubility parameter of the solvent, or satisfies the condition 6<?solvent<11 and ?<2(D), where ? is the dipole moment of the solvent; rotating the printing roller to uniformly coat the etch resist solution on the blanket; rolling the printing roller coated with the etch resist solution onto a printing plate to pattern the etch resist solution to thereby form an etch resist pattern; transferring the etch resist pattern from the printing roller to a substrate; hardening the etch resist pattern; and forming a desired thin film pattern on the substrate using the etch resist pattern.

Abstract: The present invention provides a positive photosensitive composition containing a specific tetrafunctional silsesquioxane compound (A), a siloxane polymer (B) formed of multiple kinds of alkoxysilane compounds having different numbers of alkoxyl groups, a 1,2-quinone diazide compound (C), and a solvent (D) in order to provide a positive photosensitive composition useful for forming a film on which a pattern is formed, the film being excellent in high thermal resistance, high transparency, crack resistance, adhesiveness with a ground, and the like, and being obtained by performing development with an alkali aqueous solution.

Abstract: Disclosed is a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound; and (E) a solvent. In the above Chemical Formula 1, each substituent is the same as defined in the specification.

Abstract: A positive lift-off resist composition is provided comprising (A) an alkali-soluble novolac resin, (B) a quinonediazidosulfonate photosensitive agent, (C) an alkali-soluble cellulose resin, and (D) an aromatic hydroxy compound having a formula weight of 180-800. The composition has shelf stability, high sensitivity, and a film retention after development of at least 95% and is used to form a lift-off resist pattern of fully undercut profile.

Abstract: The present invention provides a positive-type radiation-sensitive composition containing (A) a siloxane polymer, and (B) a quinone diazide compound, in which the content of aryl groups relative to Si atoms in the siloxane polymer (A) is greater than 60% by mole and no greater than 95% by mole.

Abstract: Disclosed is a positive photosensitive resin composition that includes: (A) a polybenzoxazole precursor including a repeating unit represented by the Chemical Formula 1, a repeating unit represented by the Chemical Formula 2, or a combination thereof, and a thermally polymerizable functional group at least one terminal end of the polybenzoxazole precursor; (B) a photosensitive diazoquinone compound; (C) a silane compound; (D) a phenol compound including a cross-linking functional group; and (E) a solvent.

Abstract: The positive photosensitive resin composition of the present invention has a polyamide resin and a photosensitive agent, wherein the polyamide resin has a specific structure. The cured film of the present invention has a cured product of the positive photosensitive resin composition. The protecting film and insulating film of the present invention has the cured film each. The semiconductor device and display device of the present invention has the cured film each.

Abstract: Disclosed are a photosensitive compound and a method of manufacturing the same. The photosensitive is composed of a naphthoquinonediazide sulfonic ester compound having at least one naphthoquinonediazide sulfoxy group, and having either at least one carboxy group with 1 to 8 carbon atoms or at least one alkoxy group with 1 to 8 carbon atoms, in one molecule.

Abstract: Disclosed is a photosensitive resin composition, comprising 0.1 to 20 parts by weight of a polygonal oligomeric silsesquioxane derivative, and 5 to 30 parts by weight of a compound generating acid by light, based on 100 parts by weight of a polyamide derivative.

Abstract: A positive-type photosensitive resin composition includes (A) a polyamide resin that includes a structural unit shown by the following formula (1) and a structural unit shown by the following formula (2), and (B) a photosensitive compound, the polyamide resin (A) having a weight average molecular weight (Mw) of 5000 to 80,000, and a cured film obtained by curing the positive-type photosensitive resin composition at 250° C. having a tensile modulus of elasticity of 2.0 to 4.0 GPa and a tensile elongation of 10 to 100%. According to the present invention, a positive-type photosensitive resin composition that can be cured at a low temperature and a highly reliable semiconductor device including a cured film of the positive-type photosensitive resin composition can be provided.

Abstract: A positive-type photosensitive composition including an alkali-soluble polymer formed through copolymerization of monomer (A) represented by the following General Formula (I) and other radical polymerizable monomer (B), a 1,2-quinonediazide compound, and a nanowire structure: where R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom or a C1 to C5 alkyl group, n is an integer of 1 to 5, and m is an integer of 1 to 7.

Abstract: Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.

Abstract: Polyimide-based polymers and copolymers thereof are provided. Further provided is a positive type photoresist composition comprising at least one of the polyimide-based polymers and copolymers thereof as a binder resin. The photoresist composition exhibits high resolution, high sensitivity, excellent film characteristics and improved mechanical properties, which are required for the formation of semiconductor buffer coatings.

Abstract: An array for a display device is formed by adhering a positive dry film resist, which has a positive photoresist resin layer over a supporting film, to a substrate such that the photoresist resin layer adheres on a surface of the substrate. The supporting film is then released from the photoresist resin layer adhered to the surface of the substrate, the layer is exposed to light; and the positive type photoresist layer is developed to remove exposed regions.

Abstract: Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.