Abstract: The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.

Abstract: An object of the present invention is to provide a polyimide binder which can be prepared under lower temperature conditions. The binder composition for a secondary battery of the present invention is characterized in comprising a polyamic acid and an aromatic compound comprising an electron donating group and an organic acid group.

Abstract: A salt is represented by formula (I). In formula (I), R1, R2 and R3 each independently represent a halogen atom, a perfluoroalkyl group having 1 to 6 carbon atoms or a hydrocarbon group having 1 to 12 carbon atoms, and —CH2— included in the hydrocarbon group may be replaced by —O— or —CO—, m1 represents an integer of 0 to 4, and when m1 is 2 or more, a plurality of R1 may be the same or different from each other, m2 represents an integer of 0 to 4, and when m2 is 2 or more, a plurality of R2 may be the same or different from each other, and m3 represents an integer of 0 to 4, and when m3 is 2 or more, a plurality of R3 may be the same or different from each other.

Abstract: A resist composition comprising a base polymer and a sulfonium salt of thiophenecarboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A photoresist composition comprises a polymer resin, a photoactive compound, an organometallic compound, an enhancement additive, and a first solvent. The enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.

Abstract: The present invention relates to a positive photoresist composition including an acrylic resin including a repeat unit of a specific structure, and a photosensitive acid-generating compound, a photoresist pattern using the same, and a method for manufacturing a pattern.

Abstract: A photoresist composition comprising: a resin which has an acid-labile group; an acid generator; a compound which has a sulfide bond and a mercapto group; and a solvent.

Abstract: Provided is a resin capable of yielding a cured film with less warp and good uniformity, and of yielding a cured film (pattern) with less scum; a composition using the resin; a cured film; and a method for manufacturing a cured film and a semiconductor device. The resin is selected from polyimide precursor, polyimide, polybenzoxazole precursor, and, polybenzoxazole, and has a polymerizable group, and has a total content of a component with a molecular weight of 1,000 or smaller of 0.005 to 1.0% by mass.

Abstract: A photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I?): wherein R51, R52, R53 and R54 independently each represent a C1-C8 alkyl group, and A11 represents a C3-C36 divalent saturated cyclic hydrocarbon group which can contain one or more heteroatoms and which have one or more substituents or a C6-C20 divalent aromatic hydrocarbon group which can contain one or more heteroatoms and which have one or more substituents.

Abstract: Provided are a thermosetting resin composition which is soluble in a general-purpose solvent and which can obtain a cured product (cured film) having high optical transparency to the ultraviolet region (approximately 300 nm) from the visible region, and a polyamide-imide resin suitable for use in preparing the thermosetting resin composition. Specifically, provided are an alcohol-modified polyamide-imide resin, which is obtained by reacting an isocyanurate type polyisocyanate (a1) synthesized from an isocyanate having an aliphatic structure with a tricarboxylic anhydride (a2) to prepare a polyamide-imide resin (a), and then reacting the polyamide-imide resin (a) with an alcohol compound (b); a curable resin composition containing the polyamide-imide resin; and a cured product of the curable resin composition.

Abstract: A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.

Abstract: A water washable resin formulation for 3D printing having at least one water-soluble and/or water-dispersible ingredient such as an oligomer and/or monomer. In one example, a water-soluble ingredient is greater than 1% by weight of the resin formulation. A water-soluble or water-dispersible filler may also be used as an ingredient in the resin formulation. The water-washable photopolymer resin formulation allows printed 3D objects to be cleaned with water rather than organic solvents. Because the water-washable photopolymer resin formulation is insoluble when cured, only the uncured water-washable photopolymer resin formulation is washed away. Depending on the filler's property and compatibility with the other ingredients of the resin formulation, the blending of filler therein can be used to modify the mechanical and chemical properties of the printed 3D objects.

Abstract: A water washable resin formulation for 3D printing having at least one water-soluble and/or water-dispersible ingredient such as an oligomer and/or monomer. In one example, a water-soluble ingredient is greater than 1% by weight of the resin formulation. A water-soluble or water-dispersible filler may also be used as an ingredient in the resin formulation. The water-washable photopolymer resin formulation allows printed 3D objects to be cleaned with water rather than organic solvents. Because the water-washable photopolymer resin formulation is insoluble when cured, only the uncured water-washable photopolymer resin formulation is washed away. Depending on the filler's property and compatibility with the other ingredients of the resin formulation, the blending of filler therein can be used to modify the mechanical and chemical properties of the printed 3D objects.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The photoresist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a first sensitizer that is bonded to the polymer backbone, a second sensitizer that is not bonded to the polymer backbone, and a photo-acid generator (PAG).

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.

Abstract: An ultraviolet-curable liquid developer containing a cationically polymerizable liquid monomer, a photoinitiator according to formula (1), and a toner particle. In the developer the cationically polymerizable liquid monomer contains a vinyl ether compound, the molar average SP value of the cationically polymerizable liquid monomer is not more than 9.0, the molar average number of functional groups for the cationically polymerizable liquid monomer is at least 1.8, the photoinitiator contains a specified compound, and the content of the specified compound is at least 0.01 mass parts and not more than 5.00 mass parts per 100 mass parts of the cationically polymerizable liquid monomer.

Abstract: A thinner composition including an acetate-based compound in an amount in a range of about 30 weight percent to about 70 weight percent, a lactate-based compound in an amount in a range of about 1 weight percent to about 20 weight percent, a propionate-based compound in an amount in a range of about 30 weight percent to about 60 weight percent, and an ether-based additive in an amount in a range of about 10 ppm to about 500 ppm, based on a total amount of the composition.

Abstract: A photosensitive resin composition is prepared by dispersing at least one of a hydrophobic polymer and a mixture of an oil-soluble photopolymerization initiator and a water-insoluble or sparingly water-soluble compound having at least one photoactive, ethylenically unsaturated group in an aqueous solution that contains both a water-soluble polymer and a diazo resin is obtained by condensing a water-soluble salt of an optionally substituted 4-diazodiphenylamine with formaldehyde in the presence of sulfuric acid and phosphoric acid. This photosensitive resin composition gives a photosensitive film having excellent stability over time and a wide exposure latitude. By adding a specific fluorine compound to the photosensitive resin composition, a screen plate has an excellent discharge performance.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: According to one embodiment, An actinic-ray- or radiation-sensitive resin composition comprises a basic compound (C) having n basic groups and m groups that when exposed to actinic rays or radiation, generate an acid, provided that n and m satisfy the relationships n?1, m?2 and n<m.

Abstract: A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, which is excellent in sensitivity, resolution, a pattern profile and a depth of focus (DOF), and, an actinic ray-sensitive or radiation-sensitive film and a pattern forming method, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes a nitrogen-containing compound and a resin (Ab) capable of varying a polarity or an alkali solubility thereof by the action of an acid.

Abstract: A photoresist composition comprising: a resin which shows an increase in solubility in an aqueous alkali solution by an action of an acid; an acid generator; a compound represented by formula (I); and a solvent the amount of which is from 40 to 75% by mass of the total amount of the photoresist composition: wherein the ring W1 is a nitrogen-containing heterocyclic ring, or a benzene ring having a substituted or unsubstituted amino group, A1 represents a phenyl group or a naphtyl group, and n represents an integer of 2 or 3.

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

Abstract: Provided is an actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a specific compound represented by a general formula, (B) a resin which is alkali-insoluble or sparingly alkali-soluble and becomes easily alkali-soluble in the presence of an acid, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; a film formed using the composition; and a pattern forming method using the same.

Abstract: An infrared sensitive, positive-working, image forming composition and element are disclosed. The image forming composition comprises a 1,1-di[(alkylphenoxy)ethoxy]cyclohexane, an infrared absorbing dye having a maximum absorption peak in the range of from about 700 nm to about 1100 nm, and a novolac polymer. The composition is applied and dried on a planar, hydrophilic substrate to form an image forming element, in particular, a planographic printing plate. Upon imagewise exposure to a near-infrared radiation source, the infrared dye absorbs light in the exposed areas and converts it to heat, which causes a disruption in the matrix of the image forming composition. Upon development with an aqueous alkaline developer, the exposed areas are removed while the nonexposed areas remain, thus forming a positive image.

Abstract: Two acids may be formed per exposed photon using free radical promotion so that two acid products are produced via two parallel pathways. This results in increased fabrication facility throughput. In some embodiments, this may be achieved while reducing side-lobe defect liability.

Abstract: A resin composition for laser engraving, including: a compound (A) having at least one of a hydrolyzable silyl group or a silanol group; and a binder polymer (B) having a functional group capable of forming a crosslinked structure by reacting with at least one of a hydrolyzable silyl group or a silanol group.

Abstract: This disclosure provides a negative-working resist composition comprising a calix resorcinarene derivative (A) of specific structure, an acid generator (B) which directly or indirectly generates an acid when exposed to an active energy ray having a wavelength of 248 nm or less, and a cross-linking agent (C).

Abstract: Disclosed herein are compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantifies of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs.

Abstract: A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): (ii) a polymerization unit represented by the formula (II): and (iii) at least one polymerization unit selected from the group consisting of a polymerization unit represented by the formula (III): and a polymerization unit represented by the formula (IV): and (B) at least one acid generator.

Abstract: A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.

Abstract: In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

Abstract: A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.

Abstract: A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.

Abstract: A light shielding film for a display device, comprising a polymer binder, metal particles dispersed in the polymer binder, and a compound including a sulfur atom or a nitrogen atom. A substrate for a display device comprising the light shielding film. And a color filter comprising the light shielding film.

Abstract: Radiation-sensitive compositions can be used to prepare imageable elements useful for example to make lithographic printing plates. The compositions include an aqueous alkaline solvent soluble phenolic resin or poly(vinyl acetal) as a polymeric binder. The compositions also include a fluorinated compound that has a urethane moiety and a fluorinated alkyleneoxy moiety to provide improved coating and friction properties particularly when stacked with interleaf papers. The radiation-sensitive composition can be coated as an imageable layer that further includes a radiation absorbing compound that is sensitive, for example, to infrared radiation.

Abstract: A photoreactive composition comprises (a) at least one reactive species that is capable of undergoing an acid- or radical-initiated chemical reaction; and (b) a photoinitiator system comprising photochemically-effective amounts of (1) at least one type of semiconductor nanoparticle quantum dot that has at least one electronic excited state that is accessible by absorption of two or more photons, and (2) a composition, different from said reactive species, that is capable of interacting with the excited state of the semiconductor nanoparticle quantum dot to form at least one reaction-initiating species.

Abstract: A positive resist composition includes a resin component (A) whose alkaline solubility changes by an action of an acid, an acid generator component (B), and polypropylene glycol, wherein the component (A) includes a resin component (A1) including a constitutional unit (a1) represented by general formula (I), a constitutional unit (a2) represented by general formula (II), and a constitutional unit (a3) having an acid dissociable dissolution inhibiting group, wherein R represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 3, wherein R represents a hydrogen atom or a methyl group, and R1 represents alkyl group having a carbon number of 1 to 5, and l represents an integer of 0 to 3.

Abstract: To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.

Abstract: A negative type radiation sensitive resin composition comprising: (A) an alkali-soluble resin containing the polymerized unit of a polymerizable unsaturated compound having a phenolic hydroxyl group and having a weight average molecular weight of 4,100 to 20,000 and a weight average molecular weight/number average molecular weight ratio of more than 1.25 to not more than 2.00; (B) a radiation sensitive acid generating agent; and (C) an acid crosslinking agent. This composition can be used with an alkali developer having a normal concentration, can form a high-resolution rectangular line-and-space resist pattern, and provides a chemically amplified negative type resist which is free from a resist pattern defect (bridging or chip line) after development and has excellent sensitivity, developability and dimensional fidelity.

Abstract: Provided are sulfonyldiazomethane compounds and photoacid generators suited for resist materials which generate less foreign matters after application, development and peeling, and in particular, are excellent in the pattern profile after the development; and resist materials and patterning process using them. Provided are sulfonyldiazomethane compounds represented by formula (1): Also provides are photoacid generators containing the sulfonyldiazomethane compounds, and a chemical amplification resist material comprising (A) a resin which changes its solubility in an alkali developer by action of an acid, and (B) a sulfonyldiazomethane compound of formula (1) capable of generating an acid by exposure to radiation. Provided is a patterning process comprising steps of applying the above-described resist material onto a substrate to form a coating, heating the coating, exposing the coating, and developing the exposed coating in a developer after an optional heat treatment.

Abstract: The present invention relates to a resin composition comprising: an alkali-soluble resin (A); an infrared absorbing agent (B); and a thiol compound (C), wherein a solubility thereof in an alkaline aqueous solution is changed by exposure with a infrared laser ray, and a positive or negative-type image recording layer containing the resin composition.

Abstract: A positive photosensitive composition comprising (A1) a compound that generates an aromatic sulfonic acid substituted with at least one fluorine atom and/or a group having at least one fluorine atom upon irradiation of an actinic ray or radiation, (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase solubility in an alkali developing solution, and (C) a compound that has at least three hydroxy or substituted hydroxy groups and at least one cyclic structure or (A2) an onium salt of an alkanesulfonic acid in which the ?-position of the sulfonic acid is not substituted with a fluorine atom and/or an onium salt of a carboxylic acid.

Abstract: The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group

Abstract: Resist compositions comprising basic compounds having an imidazole skeleton and a polar functional group have an excellent resolution and an excellent focus margin and are useful in microfabrication using electron beams or deep-UV light.

Abstract: A process for fabricating of an article by exposing a photoreactive composition to light under multiphoton absorption conditions. The light passes through an optical system having a final optical element having a numeric aperture in a range of from 0.65 to 1.25, inclusive.

Abstract: A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

Abstract: A chemical amplification type resist composition comprising a specific sulfonyldiazomethane containing long-chain alkoxyl groups has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

Abstract: Sulfonyldiazomethane compounds containing a long-chain alkyl- or alkoxy-naphthyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, and minimized line width variation or shape degradation even on long-term PED.