Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.

Abstract: Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.

Abstract: A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

Abstract: A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 ?m and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.

Abstract: A photoresist which has high transparency at a wavelength of 157 nm and which therefore permits a greater layer thickness in photolithographic processes for the production of microchips. The photoresist includes a polymer that is prepared from a first fluorinated comonomer that includes a group cleavable under acid catalysis, a second comonomer that includes an anchor group, and a third comonomer whose degree of fluorination is tailored to the second comonomer so that at least one of the comonomers acts as an electron donor and the others act as electron acceptors in the free radical polymerization. Thus, in spite of a high degree of fluorination, the polymer can be prepared in a simple manner and in high yield.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1

Abstract: A sulfonyloxime compound is provided which is represented by a general formula (1): wherein, R1 represents a hydrogen atom, an alkyl group, an aryl group, or a heteroaryl group; R2 represents an alkyl group, an aryl group, or a heteroaryl group; X represents a halogen atom; Y represents —R3, a —CO—R3 group, —COO—R3 group, —CONR3R4 group, —S—R3 group, —SO—R3 group, —SO2—R3 group, a —CN group or a —NO2 group, and R3 and R4 within the Y group each represent a hydrogen atom, an alkyl group, an aryl group, or a heteroaryl group, although any two of R1, R2 and R3 may also be bonded together to form a cyclic structure, and furthermore dimers of a compound represented by the general formula (1) in which R1, R2 or Y groups from separate molecules are bonded together to form a single bivalent group, are also possible.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: The formula use the following definitions. m is a number from 0.1 to 0.9. n is a number from 0.1 to 0.9 with m+n=1. I is an integer from 1 to 100. R1 is H, an alkyl, a halogen, an amine, a silicon compound, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R2 is H, an alkyl, a halogen, an amine, a silicon group, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R3 is an organic protective group which can be eliminated. A resist and a process using the resist utilize the polymerizable composition. The use of the polymerizable composition in a resist reduces or prevents charging of a substrate at high exposure sensitivity.

Abstract: Disclosed are photoimageable compositions having improved stripping properties including a photoresist strip enhancer. Also disclosed are methods of enhancing the strippability of photoimageable compositions and methods for manufacturing printed wiring boards using such photoimageable compositions.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.

Abstract: A resist composition containing a fluoropolymer, an acid-generating compound and an organic solvent, a resist film, and methods for making thereof.

Abstract: New photoacid generator systems that comprise a sensitizer compound and one or more photoacid generator compounds are provided and photoresist compositions that comprise such systems. Photoacid generator systems of the invention are particularly useful as photoactive components of photoresists imaged at short wavelengths such as 248 nm, 193 nm and 157 nm.

Abstract: The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

Abstract: A positive resist composition comprising (A) a resin, which is decomposed by the action of an acid to increase solubility in an alkali developing solution, having a repeating unit represented by formula (Y) defined in the specification, (B) a compound capable of generating an acid upon irradiation of an actinic ray or radiation, and (C) a solvent.

Abstract: A positive photosensitive composition comprising (A1) a compound that generates an alkanesulfonic acid in which the &agr;-position is substituted with a fluorine atom upon irradiation of an actinic ray or radiation, (A2) an onium salt of an alkanesulfonic acid in which the &agr;-position is not substituted with a fluorine atom, and (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase a solubility rate in an alkali developing solution.

Abstract: A photosensitive composition for optical waveguides comprising of an organic oligomer, a polymerization initiator and a crosslinking agent, the organic oligomer being a silicone oligomer represented by the following formula (1), wherein X denotes hydrogen, deuterium, halogen, an alkyl group or an alkoxy group; m is an integer from 1 to 5; x and y represent the proportion of respective units, and neither x nor y is 0; and R1 denotes a methyl, ethyl, or isopropyl group; a production method thereof, and a polymer optical waveguide pattern formation method using the same.

Abstract: A positive radiation-sensitive composition comprising: (a) a resin whose solubility in an alkali developer increases by the action of an acid; (b) a compound which generates a carboxylic acid having a molecular weight of 100 or less upon irradiation with an actinic ray or a radiant ray; (c) a surfactant; and (d) a solvent.

Abstract: Disclosed are photoimageable compositions containing silsesquioxane binder polymers and photoactive compounds, methods of forming relief images using such compositions and methods of manufacturing electronic devices using such compositions. Such compositions are useful as photoresists and in the manufacture of optoelectronic devices.

Abstract: A radiation-sensitive resin composition comprising: (A) an alkali insoluble or scarcely alkali-soluble resin having an acid-dissociable protecting group of the following formula [I], wherein R1 groups are monovalent alicyclic hydrocarbon groups or alkyl groups, provided that at least one of the R1 groups is the monovalent alicyclic hydrocarbon group, or any two of the R1 groups and the carbon atom form a divalent alicyclic hydrocarbon group, (B) a photoacid generator, and (C) propylene glycol monomethyl ether acetate, &ggr;-butyrolactone, and cyclohexanone as solvents. The resin composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays and exhibits excellent film thickness uniformity and storage stability.

Abstract: The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Abstract: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Abstract: Imageable elements with improved dot stability are disclosed. The imageable elements comprise a layer of an imageable composition over a support. The imageable composition comprises an infrared absorbing compound, an acid generator, an acid activatable crosslinking agent, a polymeric binder, and about 0.01 wt % to 1 wt % of an added onium compound. The elements may be thermally imaged and developed to produce images useful as lithographic printing plates.

Abstract: A photosensitive composition for optical waveguides comprising of an organic oligomer, a polymerization initiator and a crosslinking agent, the organic oligomer being a silicone oligomer represented by the following formula (1), wherein X denotes hydrogen, deuterium, halogen, an alkyl group or an alkoxy group; m is an integer from 1 to 5; x and y represent the proportion of respective units, and neither x nor y is 0; and R1 denotes a methyl, ethyl, or isopropyl group; a production method thereof, and a polymer optical waveguide pattern formation method using the same.

Abstract: A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.

Abstract: The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.

Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.

Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Abstract: Provided are a variety of monomers suitable of producing photosensitive polymers, that are in turn, useful in photoresist compositions, through radical (cationic) polymerization including at least one multi-ring alkenyl ethers and one &agr;-fluorinated acrylate. The resulting photoresist compositions exhibit both acceptable resistance to dry etching processing and light transmittance suitable for use with various light sources such as KrF excimer lasers, ArF excimer lasers or F2 excimer lasers, in a photolithography process to produce fine photoresist patterns. In addition to the multi-ring alkenyl ethers and &agr;-fluorinated acrylates, additional monomers comprising one or more cyclic aliphatic and heterocyclic compounds, both unsubstituted and substituted, in particular dihydropyrans, may be incorporated into the photosensitive polymers.

Abstract: The present invention relates to a conductive polymer. The present invention provides a conductive polymer substituted with acid labile functional groups including an amine functional group and an acid labile functional group which plays a protecting role substituted to an amine functional group of a conductive polymer. The conductive polymer of the present invention has enhanced physical and mechanical properties with higher solubility and conductivity than a previous polyaniline or polypyrrole composition, and also, has improved transparency, sensitivity, adhesive property and patternability. Moreover, the conductive polymer of the present invention has the higher electrical conductivity of the minimum 10 times and the most maximum 102 S/cm than the previous polyaniline, and accordingly, can be used for a photosensitive material such as a fiber, a coating, an electrode, an organic semiconductor, and the like.

Abstract: Photoresist compositions that contain one or more components having sulfonamide and Si substitution. Preferred photoresist compositions of the invention contain an Si-polymer such as a silsesquioxane that has sulfonamide substitution and may be employed in multilayer resist systems. In preferred aspects, the Si-polymer has both sulfonamide substitution as well as moieties that can provide contrast upon exposure to photogenerated acid.

Abstract: To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.

Abstract: A positive-working resist composition comprising (A) a specific resin which has an aliphatic cyclic hydrocarbon group and enhances in the dissolution rate in an alkaline developing solution by an action of an acid, and (B) a specific compound generating an acid by irradiation of actinic ray or radiation. The composition is excellent in the resolving power and the exposure margin, and can be suitably used for micro-photofabrication using far ultraviolet rays, particularly ArF eximer laser beams.

Abstract: A photosensitive polymer having a hydroxy alkyl vinyl ether monomer and a resist composition are provided. The photosensitive polymer includes an alkyl vinyl ether monomer having the formula, and the photosensitive polymer has a weight average molecular weight of 3,000 to 50,000: where x is an integer from 3 to 6 inclusive, R1 and R2 are independently alkyl having from 1 to 20 carbon atoms, fluorinated alkyl having from 1 to 10 carbon atoms or perfluoronated alkyl having from 1 to 10 carbon atoms.

Abstract: A negative resist composition comprising: (A) a compound being capable of generating an acid upon irradiation with an actinic ray or a radiation; (B) an alkali-soluble polymer; and (C) at least two crosslinking agents being capable of generating crosslinking with the polymer (B) by an action of an acid, wherein the crosslinking agent (C) comprises at least two compounds having a different skeleton from each other, which are selected from phenol derivatives having at least one of a hydroxymethyl group and an alkoxymethyl group on a benzene ring thereof, in which a sum of the hydroxymethyl group and the alkoxymethyl group is two or more, one of the at least two crosslinking agents comprises one or two benzene rings in the molecule thereof, and other one of the at least two crosslinking agents comprises from 3 to 5 benzene rings in the molecule thereof.

Abstract: A method of colouring a polymeric material containing a) a latent acid, b) a colour former and c) optionally further ingredients by irradiation with UV-light.

Abstract: The present invention relates to an image forming material having, on a substrate, an image forming layer that includes at least (A) a novolac type phenolic resin containing phenol as a structural unit, (B) a photo-thermal converting agent, and (C) a specific ammonium compound or a specific onium salt.

Abstract: The present invention relates to new copolymers and use of such copolymer as a resin binder component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention include repeat units of 1) meta-hydroxystyrene groups, 2) para-hydroxystyrene groups, and 3) photoacid-labile groups.

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

Abstract: A planographic printing plate precursor of the present invention includes a hydrophilic support, and a lower layer and an image recording layer disposed on the hydrophilic support in this order. The lower layer includes a water-insoluble and alkali-soluble resin, and wherein the image recording layer includes a novolak type phenolic resin containing phenol as a structural unit thereof and a light-to-heat conversion agent, and exhibits increased solubility in an alkaline aqueous solution when exposed to an infrared laser.

Abstract: The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.

Abstract: New photoresist compositions are provided that contain a halogenated salt, particularly a halogenated counter ion of an ammonium or alkyl ammonium salt. Preferred photoresists of the invention are chemically-amplified positive resists and contain an ammonium or alkyl ammonium salt that has a halogenated anion component such as a halogenated alkyl sulfonate or carboxylate anion component. Inclusion of the halogenated organic salt in a photoresist composition can provide enhanced lithographic performance.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: A liquid radiation-curable composition that comprises

Abstract: There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same.

Abstract: A polymerizable composition containing: (A) a binder polymer; (B) a compound having a polymerizable unsaturated group; and (C) a compound which has a triarylsulfonium salt structure and in which a sum of Hammett's a constants of all substituents bonded to the aryl skeleton is larger than 0.46.

Abstract: The present invention provides a chemical amplification type positive resist composition comprising (A) resin having a phenol skeleton wherein the phenol skeleton has protective group which can be dissociated by the action of an acid, the phenol skeleton itself is insoluble or poorly soluble in an alkali aqueous solution and the phenol skeleton becomes soluble in an alkali aqueous solution after dissociation of the protective group, (B) resin obtained by protecting a part of hydroxyl group in poly(p-hydroxystyrene) with pivaloyl group and (C) an acid generator.

Abstract: TIMD (tetraisoprophyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 mn.

Abstract: The present invention pertains to photoimaging and the use of photoresists (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The present invention also pertains to novel hydroxy ester-containing polymer compositions that are useful as base resins in resists and potentially in many other applications.

Abstract: A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1.