Sulfur Compound Containing Patents (Class 430/921)
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Patent number: 6767689Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.Type: GrantFiled: May 10, 2002Date of Patent: July 27, 2004Assignee: Shipley Company, L.L.C.Inventors: Edward K. Pavelchek, Peter Trefonas, III
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Publication number: 20040137369Abstract: A polymerizable composition containing: (A) a binder polymer; (B) a compound having a polymerizable unsaturated group; and (C) a compound which has a triarylsulfonium salt structure and in which a sum of Hammett's a constants of all substituents bonded to the aryl skeleton is larger than 0.46.Type: ApplicationFiled: December 18, 2003Publication date: July 15, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventor: Kazuto Shimada
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Publication number: 20040137368Abstract: A liquid radiation-curable composition that comprisesType: ApplicationFiled: January 13, 2003Publication date: July 15, 2004Applicant: 3D Systems, Inc.Inventor: Bettina Steinmann
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Publication number: 20040126699Abstract: A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1.Type: ApplicationFiled: November 25, 2003Publication date: July 1, 2004Applicant: Samsung Electronics Co., Inc.Inventor: Sang-Jun Choi
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Patent number: 6756179Abstract: A positive resist composition comprises (A) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developer, and (B) a compound capable of generating an aromatic sulfonic acid substituted with at least one group containing a fluorine atom upon irradiation with one of an actinic ray and radiation.Type: GrantFiled: September 18, 2001Date of Patent: June 29, 2004Assignee: Fuji Photo Film Co., Ltd.Inventors: Toru Fujimori, Kunihiko Kodama, Shinichi Kanna, Fumiyuki Nishiyama
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Patent number: 6753126Abstract: Disclosed is a polymer for use in a chemically amplified resist, a resist composition including such a polymer is suitable for use in a chemically amplified resist, which is sensitive to KrF or ArF excimer laser and forms a photoresist pattern having low dependence on and good adhesion to substrate, high transparency in the wavelength range of the above radiation, strong resistance to dry etching, and excellencies in sensitivity, resolution and developability. The resist composition can have a stronger etching resistance with a maximized content of unsaturated aliphatic ring in the polymer and a reduced edge roughness of the photoresist pattern with an alkoxyalkyl acrylate monomer employed.Type: GrantFiled: February 11, 2002Date of Patent: June 22, 2004Assignee: Korea Kumho Petrochemical Co., Ltd.Inventors: Joohyeon Park, Dongchul Seo, Jongbum Lee, Hyunpyo Jeon, Seongju Kim
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Patent number: 6749987Abstract: A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.Type: GrantFiled: October 17, 2001Date of Patent: June 15, 2004Assignee: Fuji Photo Film Co., Ltd.Inventors: Kunihiko Kodama, Toshiaki Aoai
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Publication number: 20040106064Abstract: A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided.Type: ApplicationFiled: November 6, 2003Publication date: June 3, 2004Applicant: Samsung Electronics Co., Ltd.Inventor: Sang-Jun Choi
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Patent number: 6740467Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.Type: GrantFiled: May 18, 2001Date of Patent: May 25, 2004Assignee: Shipley Company, L.L.C.Inventor: Peter Trefonas, III
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Publication number: 20040096773Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 &mgr;m.Type: ApplicationFiled: November 7, 2003Publication date: May 20, 2004Inventors: Myung Sup Jung, Yong Young Park, Sung Kyung Jung, Sang Yoon Yang
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Patent number: 6733951Abstract: A positive radiation-sensitive composition comprising: (A) at least one compound capable of generating an acid upon irradiation with an actinic ray represented by the following formula (I); and (B) a resin having a group capable of decomposing by the action of an acid to increase the solubility in an alkali developing solution: wherein R1, R2, R3, R4 and R5 each represents a hydrogen atom, an alkyl group, an alkoxyl group, a nitro group, a halogen atom, an alkyloxycarbonyl group, or an aryl group, and at least two of R1, R2, R3, R4 and R5 may be bonded to form a cyclic structure; R6 and R7 each represents a hydrogen atom, an alkyl group, a cyano group or an aryl group; Y1 and Y2 each represents an alkyl group, an aryl group, an aralkyl group, or an aromatic group containing a hetero atom, and Y1 and Y2 may be bonded to form a ring; Y3 represents a single bond or a divalent linking group; and X− represents a non-nucleophilic anion; provided that at least one of R1, R2, R3, R4 and R5,Type: GrantFiled: May 14, 2002Date of Patent: May 11, 2004Assignee: Fuji Photo Film Co., Ltd.Inventor: Kunihiko Kodama
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Publication number: 20040072097Abstract: A photosensitive composition of the present invention has excellent sensitivity and pattern profile, which comprises an acid generator having a specific structure.Type: ApplicationFiled: September 24, 2003Publication date: April 15, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventor: Kunihiko Kodama
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Publication number: 20040067431Abstract: A photoreactive composition comprises (a) at least one reactive species that is capable of undergoing an acid- or radical-initiated chemical reaction; and (b) a photoinitiator system comprising photochemically-effective amounts of (1) at least one type of semiconductor nanoparticle quantum dot that has at least one electronic excited state that is accessible by absorption of two or more photons, and (2) a composition, different from said reactive species, that is capable of interacting with the excited state of the semiconductor nanoparticle quantum dot to form at least one reaction-initiating species.Type: ApplicationFiled: October 2, 2002Publication date: April 8, 2004Applicant: 3M Innovative Properties CompanyInventors: David S. Arney, Catherine A. Leatherdale, Manoj Nirmal
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Patent number: 6716566Abstract: There is provided a negative planographic printing plate which can be directly recorded based on digital data from computers and the like, excellent in storage stability, shows no reduction in sensitivity with the lapse of time, and has excellent face flatness. It comprises a substrate having disposed thereon a photosensitive layer which is obtained by applying a photosensitive layer application solution containing an infrared absorber, a compound which generates a radical or acid due to heat, a polymerizable compound or a crosslinking compound, and a silicon-based surfactant such as a siloxane/oxyethylene copolymer and the like, onto the substrate and drying the solution, and which is hardened by exposure to an infrared laser ray.Type: GrantFiled: July 2, 2001Date of Patent: April 6, 2004Assignee: Fuji Photo Film Co., Ltd.Inventor: Keitaro Aoshima
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Publication number: 20040058272Abstract: A negative type resist composition comprising:Type: ApplicationFiled: September 5, 2003Publication date: March 25, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Hyou Takahashi, Kazuyoshi Mizutani, Shoichiro Yasunami
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Publication number: 20040053160Abstract: A resist composition comprising:Type: ApplicationFiled: July 7, 2003Publication date: March 18, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Hyou Takahashi, Kazuyoshi Mizutani, Koji Shirakawa, Shoichiro Yasunami
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Publication number: 20040053158Abstract: A chemically amplified photoresist composition comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) as photosensitive acid donor, at least one compound of the formula Ia, Ib, Ic, IIb or IIc wherein R1 is for example C1-Calkyl, C3-C30cycloalkyl, C1-C5haloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, C6-C12bicycloalkenyl, phenyl, naphthyl, anthracyl, phenanthryl, or is a heteroaryl radical; all of which are unsubstituted or substituted; optionally some of the substituents form 5- or 6-membered rings with further substituents on the phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl ring or with one of the carbon atoms of the phenyl, naphtyl, anthracyl, phenanthryl, or heteroaryl ring; R′1 is for example C1-C12alkylene, C3-C30cycloalkylene, phenylene, naphtylene, diphenylene, or oxydiphenylene, wherein these radicals are unsubstituted or substituted; A and B for example are a direct bond; Ar1 and Ar2 independentlyType: ApplicationFiled: May 21, 2003Publication date: March 18, 2004Inventors: Hitoshi Yamato, Toshikage Asakura, Akira Matsumoto, Masaki Ohwa
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Publication number: 20040048192Abstract: A radiation-sensitive resin composition comprising (A) a resin comprising at least two recurring units of the formulas (1)-(6) in the total amount of 5-70 mol %, but each in the amount of 1-49 mol %, the resin being insoluble or scarcely soluble in alkali, but becoming easily soluble in alkali by the action of an acid, and (B) a photoacid generator.Type: ApplicationFiled: August 27, 2003Publication date: March 11, 2004Inventors: Motoyuki Shima, Hiroyuki Ishii, Masafumi Yamamoto, Daichi Matsuda, Atsushi Nakamura
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Patent number: 6703182Abstract: Compounds of formulae I, II or III wherein m is zero or 1; n is 1, 2 or 3; R1 inter alia is unsubstituted or substituted phenyl, or naphthyl, anthracyl, phenanthryl, a heteroaryl radical, or C2-C12alkenyl; R′1 inter alia is vinylene, phenylene, naphthylene, diphenylene or oxydiphenylene; R2 inter alia is CN, C1-C4haloalkyl, C2-C6alkoxycarbonyl, phenoxycarbonyl, or benzoyl; R3 inter alia is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl, camphorylsulfonyl, or phenylsulfonyl; R′3 inter alia is C2-C12alkylenedisulfonyl, phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; R4 and R5 inter alia are hydrogen, halogen, C1-C8alkyl, C1-C6alkoxy, C1-C4haloalkyl, CN, NO2, C2-C6alkanoyl, benzoyl, phenyl, —S-phenyl, OR6, SR9, NR7R8, C2-C6alkoxycarbonyl or phenoxycarbonyl; R6 inter alia is hydrogen, phenyl or C1-C12alkyl; R7 and R8 inter alia are hydrogen or C1-C12alkyl; R9 inter alia is C1-C12 alkyl; R10, R11 andType: GrantFiled: February 15, 2001Date of Patent: March 9, 2004Assignee: Ciba Specialty Chemicals CorporationInventors: Jean-Luc Birbaum, Toshikage Asakura, Hitoshi Yamato
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Patent number: 6703190Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.Type: GrantFiled: June 7, 2002Date of Patent: March 9, 2004Assignee: Infineon Technologies AGInventors: Klaus Elian, Stefan Hien, Ernst-Christian Richter, Michael Sebald
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Patent number: 6696217Abstract: A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: wherein R1 is a hydrogen atom or alkyl group, R2 is an acid-labile group, X is a hydrogen atom, or substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and Y is a substituted or unsubstitued alkyl group or alicyclic hydrocarbon group having 1 to 20 carbon atoms.Type: GrantFiled: February 20, 2002Date of Patent: February 24, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-sub Yoon, Sang-gyun Woo
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Patent number: 6696216Abstract: Thiophene-containing photo acid generators having either of the following general formulas: wherein at least one of R1, R2 or R3 is thiophene or thiophene that is substituted with alkyl, alkoxy or cycloalkyl, and the remaining R1, R2 or R3, not containing a thiophene moiety, are independently selected from the group consisting of alkyl, cycloalkyl and aryl, or at least one of R1, R2 or R3 are joined together to form a cyclic moiety having from about 4 to about 8 ring carbon atoms; and Y is a counter ion, are disclosed as well as the use thereof as a component of a chemically amplified resist composition. In addition to the thiophene-containing photo acid generator, the inventive composition includes a chemically amplified base polymer, a solvent, an optional photosensitizer, an optional base, an optional dissolution modifying agent and an optional surfactant.Type: GrantFiled: June 29, 2001Date of Patent: February 24, 2004Assignee: International Business Machines CorporationInventors: Wenjie Li, Pushkara Rao Varanasi, Kuang-Jung Chen
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Publication number: 20040033440Abstract: Photoacid generators capable of generating 2,4,6-triisopropylbenzenesulfonic acid upon exposure to actinic radiation are suited for use in chemically amplified positive resist compositions. Due to the low diffusion of 2,4,6-triisopropylbenzenesulfonic acid, the compositions have many advantages including improved resolution, improved focus latitude, and minimized line width variation or shape degradation even on long-term PED.Type: ApplicationFiled: August 8, 2003Publication date: February 19, 2004Inventors: Kazunori Maeda, Youichi Ohsawa, Satoshi Watanabe
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Patent number: 6692891Abstract: The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.Type: GrantFiled: June 12, 2001Date of Patent: February 17, 2004Assignee: Hynix Semiconductor IncInventors: Jae Chang Jung, Geun Su Lee, Min Ho Jung, Ki Ho Baik
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Patent number: 6692893Abstract: Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.Type: GrantFiled: October 23, 2001Date of Patent: February 17, 2004Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Youichi Ohsawa, Jun Watanabe, Takeshi Nagata, Jun Hatakeyama
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Publication number: 20040029037Abstract: The present invention provides a sulfonate of the formula (I′): 1Type: ApplicationFiled: May 19, 2003Publication date: February 12, 2004Inventors: Akira Kamabuchi, Yasunori Uetani, Hiroshi Moriuma
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Publication number: 20040023163Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.Type: ApplicationFiled: July 31, 2003Publication date: February 5, 2004Inventors: Hiroto Yukawa, Katsumi Oomori, Ryusuke Uchida, Yukihiro Sawayanagi
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Publication number: 20040013977Abstract: A liquid radiation-curable composition that comprisesType: ApplicationFiled: January 7, 2003Publication date: January 22, 2004Applicant: 3D Systems, Inc.Inventor: Bettina Steinmann
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Publication number: 20040009430Abstract: The photosensitive resin composition of the present invention is an excellent photosensitive resin composition: exhibiting significant transmissibility at the use of an exposure light source of 160 nm or less, more specifically F2 excimer laser light , where line edge roughness and development time dependence are small and a problem of footing formation is improved; and comprising a resin which decomposes by an action of acid to increase the solubility in alkali developer, in which the resin contains a specific repeat unit; a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, in which the compound includes at least two kinds of compounds selected from the group consisting of specific compounds (B1), (B2), (B3) and (B4).Type: ApplicationFiled: June 6, 2003Publication date: January 15, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shinichi Kanna, Kazuyoshi Mizutani, Tomoya Sasaki
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Patent number: 6677100Abstract: A photosensitive polymer including a copolymer of an acrylate or methacrylate monomer having a group indicated by the following formula (I), a comonomer selected from a maleic anhydride monomer and a cyclic vinyl ether monomer, and a resist composition including the same. In the formula, R1, R2, R3, and R4 are independently a hydrogen atom, a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, a benzyl group, a phenoxy group, or —M(R′)3, M is Si, Ge, Sn, or OSi, and each R′ independently is a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, or a phenoxy group.Type: GrantFiled: September 13, 2001Date of Patent: January 13, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-woo Kim, Sang-gyun Woo
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Patent number: 6673516Abstract: A coating composition for a chemically amplified positive resist includes (A) an acid generator which generates an acid upon irradiation with active light or radiant ray, (B) a resin ingredient which exhibits increased solubility in an alkaline aqueous solution by action of an acid, (C) an organic solvent, and (D) an octanone in a proportion of from 0.1 to 5 parts by weight relative to 100 parts by weight of the ingredient (B). Using this coating composition, a method of patterning a resist. The coating composition and the method can yield a positive resist having improved definition and depth of focus.Type: GrantFiled: November 6, 2001Date of Patent: January 6, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Satoshi Kumon, Kazufumi Sato
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Patent number: 6670093Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.Type: GrantFiled: May 16, 2001Date of Patent: December 30, 2003Assignee: Industrial Technology Research InstituteInventors: Tsing-Tang Song, Tsong-Shin Jean, Weir-Torn Jiaang, Chih-Shin Chuang, Han-Bin Cheng, Jui-Fa Chang, Tzu-Yu Lin
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Publication number: 20030235784Abstract: An organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can prevent reflection of the lower film layer or substrate and reduce standing waves caused by light and variation of in the thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, with respect to a microfine pattern-forming process using photoresists for a photolithography by using ArF with 193 nm wavelength among processes for manufacturing semiconductor device. More particularly, an organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can obtain perpendicular photoresist patterns and thus inhibit breakdown and/or collapse of the patterns by comprising an acid-diffusion inhibitor.Type: ApplicationFiled: February 4, 2003Publication date: December 25, 2003Inventor: Jae-chang Jung
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Publication number: 20030235788Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.Type: ApplicationFiled: March 26, 2003Publication date: December 25, 2003Applicant: Samsung Electronics Co., Ltd.Inventor: Sang-Jun Choi
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Patent number: 6664022Abstract: New photoacid generator compounds (“PAGs”) are provided and photoresist compositions that comprise such compounds. In particular, ionic PAGs are provided that include tri-naphthyl sulfonium, thienyl iodonium, thienyl sulfonium, pentafluorophenyl iodonium and pentafluorophenyl sulfonium compounds. PAGs of the invention are particularly useful as photoactive components of photoresists imaged at short wavelengths such as sub-300 nm, sub-200 nm and sub-160 nm such as 248 nm, 193 nm and 157 nm.Type: GrantFiled: August 25, 2000Date of Patent: December 16, 2003Assignee: Shipley Company, L.L.C.Inventors: James F. Cameron, Gerhard Pohlers
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Publication number: 20030224284Abstract: A radiation-sensitive patterning composition comprising:Type: ApplicationFiled: May 30, 2002Publication date: December 4, 2003Inventor: Ting Tao
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Publication number: 20030219679Abstract: A positive-working resist composition comprising (A1) a resin containing a repeating unit represented by the specific general formula, wherein the resin increases the solubility in an alkali developing solution by the action of an acid.Type: ApplicationFiled: April 17, 2003Publication date: November 27, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Tomoya Sasaki, Kazuyoshi Mizutani, Shinichi Kanna
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Publication number: 20030215738Abstract: Photoacid generators are provided by O-arylsulfonyl-oxime compounds having formula (1) wherein R is H, F, Cl, NO2, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is 0 to 4, r′ is 0 to 5, k is 0 to 4, and G′ and G″ are S or —CH═CH—. Chemically amplified resist compositions comprising the photoacid generators have many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, and improved pattern profile after development. Because of high resolution, the compositions are suited for microfabrication, especially by deep UV lithography.Type: ApplicationFiled: March 21, 2003Publication date: November 20, 2003Inventors: Youichi Ohsawa, Katsuhiro Kobayashi, Katsuya Takemura, Junji Tsuchiya, Kazunori Maeda
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Publication number: 20030215745Abstract: A process for producing a polymer compound having a double bond in a side chain, wherein a functional group represented by the following formula (1) is subjected to an elimination reaction to form the polymer compound which includes another functional group having the double bond in the side chain thereof represented by the following formula (2): 1Type: ApplicationFiled: March 11, 2003Publication date: November 20, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventor: Kazuhiro Fujimaki
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Publication number: 20030215748Abstract: Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.Type: ApplicationFiled: June 9, 2003Publication date: November 20, 2003Applicant: Shipley Company, L.L.C.Inventors: James W. Thackeray, James F. Cameron, Roger F. Sinta
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Publication number: 20030207209Abstract: A radiation curable resin formulation suitable for planarizing an ink jet heater chip. The resin formulation includes a multifunctional epoxy component, a difunctional epoxy component, a silane coupling agent, an aryl sulfonium salt photoinitiator, and a non-photoreactive solvent. The resin formulation is substantially devoid of acrylate polymer components. Radiation curable resins according to the invention exhibit enhanced adhesion with the nozzle plate adhesive thereby reducing the incidence of delamination between the nozzle plate and a semiconductor chip containing the resin layer. Another advantage is that the resin layer, according to the invention, reduces pigment flocculation on the surface of the resin layer when using pigment-based ink jet inks.Type: ApplicationFiled: April 18, 2003Publication date: November 6, 2003Inventors: Girish S. Patil, Brian C. Hart
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Publication number: 20030203309Abstract: 1. A radiation-sensitive resin composition comprising: (A) a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid and (B) a photoacid generator.Type: ApplicationFiled: March 13, 2003Publication date: October 30, 2003Inventors: Yukio Nishimura, Hiroyuki Ishii, Masafumi Yamamoto, Isao Nishimura
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Publication number: 20030203307Abstract: A radiation-sensitive resin composition comprising: (A) an alkali insoluble or scarcely alkali-soluble resin having an acid-dissociable protecting group of the following formula [I], 1Type: ApplicationFiled: February 21, 2003Publication date: October 30, 2003Inventors: Akimasa Soyano, Hiroyuki Ishii, Hidemitsu Ishida, Motoyuki Shima, Yukio Nishimura
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Publication number: 20030203305Abstract: A negative resist composition comprising (A-1) an alkali-soluble resin containing a repeating unit represented by formula (1) defined in the specification, (A-2) an alkali-soluble resin containing a repeating unit represented by formula (2) defined in the specification, (B) a crosslinking agent crosslinking with the alkali-soluble resin (A-1) or (A-2) by the action of an acid, (C) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (D) a nitrogen-containing basic compound.Type: ApplicationFiled: March 26, 2003Publication date: October 30, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shoichiro Yasunami, Yutaka Adegawa, Koji Shirakawa
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Publication number: 20030198894Abstract: A resist composition for an electron beam, EUV or X-ray comprising (A1) a compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation.Type: ApplicationFiled: February 11, 2003Publication date: October 23, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Kazuyoshi Mizutani, Hyou Takahashi
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Publication number: 20030194639Abstract: The present invention provides a positive resist composition comprising a resin which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, and an acid generator, wherein the content of halogen atoms in the resin is 40% by weight or more, at least one of structural units constituting the resin is a structural unit having an alicyclic hydrocarbon skeleton, and the structural unit having an alicyclic hydrocarbon skeleton contains therein at least one group rendering the resin soluble in an alkali aqueous solution by the action of an acid, and at least one halogen atom.Type: ApplicationFiled: February 14, 2003Publication date: October 16, 2003Inventors: Yoshiko Miya, Kouji Toishi, Kazuhiko Hashimoto
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Publication number: 20030194650Abstract: A positive resist composition comprising (A) a fluorine group-containing resin, which has a structure substituted with a fluorine atom in the main chain and/or side chain of polymer skeleton and a group that is decomposed by the action of an acid to increase solubility in an alkali developer and (B) an acid generator capable of generating an acid upon irradiation of an actinic ray or radiation, and the acid generator of (B) is a compound selected from a sulfonium salt containing no aromatic ring and a compound having a phenacylsulfonium salt structure.Type: ApplicationFiled: December 12, 2002Publication date: October 16, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shinichi Kanna, Kazuyoshi Mizutani, Kunihiko Kodama, Tomoya Sasaki
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Publication number: 20030194641Abstract: A positive resist composition comprising (A) a resin, which is decomposed by the action of an acid to increase solubility in an alkali developing solution, having a repeating unit represented by formula (Y) defined in the specification, (B) a compound capable of generating an acid upon irradiation of an actinic ray or radiation, and (C) a solvent.Type: ApplicationFiled: February 25, 2003Publication date: October 16, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Kazuyoshi Mizutani, Tomoya Sasaki, Shinichi Kanna
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Publication number: 20030190554Abstract: A plate-making method of a printing plate comprising exposing a printing plate precursor having a photosensitive layer comprising a photopolymerizable composition containing (i) a crosslinking agent having two ethylenic polymerizable groups and (ii) a crosslinking agent having three or more ethylenic polymerizable groups, and development processing the exposed printing plate precursor with an alkali developer having a pH of not more than 12.5.Type: ApplicationFiled: August 29, 2002Publication date: October 9, 2003Inventor: Kazuto Kunita
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Publication number: 20030170563Abstract: The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.Type: ApplicationFiled: March 10, 2003Publication date: September 11, 2003Inventors: Dong-Won Jung, Sang-Jun Choi, Si-Hyeung Lee, Sook Lee