Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes an arylsulfonium salt that when exposed to actinic rays or radiation, generates an acid, the arylsulfonium salt containing at least one aryl ring on which there are a total of one or more electron donating groups, the acid generated upon exposure to actinic rays or radiation having a volume of 240 ?3 or greater.

Abstract: The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a), wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.

Abstract: A negative resist composition, which shows excellent sensitivity and resolution in pattern formation by exposure to electron beams or EUV, a novel crosslinking agent suitable for the resist composition, and a pattern forming method using the resist composition are presented. The negative resist composition comprises: (A) a polyphenol compound comprising two or more phenolic hydroxyl groups in a molecule thereof and having a molecular weight of 300 to 3,000, (B) an acid generator which directly or indirectly produces acid by exposure to active energy rays having a wavelength of 248 nm or less, and (C) a crosslinking agent represented by the chemical formula (1).

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

Abstract: A polymer obtained from copolymerization of a recurring unit having a carboxyl group and/or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.

Abstract: Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1) (in the formula, each of R11 and R12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X11 represents an aryl group; M11 represents a single bond or a divalent linking group; and Q11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M11-Q11 is 3 or more, and at least two of R11, R12, Q11, and X11 may form a ring by bonding to each other).

Abstract: A radiographic X-ray film comprising a polymer support. One or more silver halide emulsion layers are coated on each side of the support. A blue dye is contained within at least one of the polymer support or in an adjacent hydrophilic layer in a sufficient amount to result in a CIELAB measurement of L* less than or equal to 80 and b* less than or equal to ?25. This configuration provides, after imaging and development, radiographic images having desirable visual contrast, image tone, b*, and image quality.

Abstract: There is provided an acid having a fluorine-containing carbanion structure or a salt having a fluorine-containing carbanion structure, which is represented by the following general formula (1). By using a photoacid generator for chemically amplified resist materials that generates this acid, it is possible to provide a photoacid generator which has a high sensitivity to the ArF excimer laser light or the like, of which acid (photo generated acid) to be generated has a sufficiently high acidity, and which has a high dissolution in resist solvent and a superior compatibility with resin, and a resist material containing such a photoacid generator.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that can form independent line patterns with high resolution and excellent shapes and shows excellent resist performances including roughness characteristics, and to provide an actinic ray-sensitive or radiation-sensitive film and a pattern forming method using the composition. The actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group is substituted with a group represented by the following General Formula (1) (the respective symbols in the formula represent the same definitions as in the claims and the specification).

Abstract: The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted naphtholphthalein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate, excellent characteristics in adhesion and implantation onto a non-planar substrate, a good pattern profile after light exposure, and an ion implantation resistance at the time of ion implantation; and a patterning process.

Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

Abstract: A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.

Abstract: The invention relates to a method for forming microscopic structures. By scanning a focused particle beam over a substrate in the presence of a precursor fluid, a patterned seed layer is formed. By now growing this layer with Atomic Layer Deposition or Chemical Vapor Deposition, a high quality layer can be grown. An advantage of this method is that forming the seed layer takes relatively little time, as only a very thin layer needs to be deposited.

Abstract: Disclosed is a fluorine-containing unsaturated carboxylic acid represented by formula (1), wherein R1 represents a polymerizable double-bond containing group, R3 represents a fluorine atom or fluorine-containing alkyl group, and W represents a bivalent linking group. This compound can provide a fluorine-containing polymer compound that has a weight-average molecular weight of 1,000-1,000,000 and contains a repeating unit represented by formula (2), wherein R3 and W are defined as above, each of R4, R5 and R6 independently represents a hydrogen atom, fluorine atom or monovalent organic group, at least two of R4, R5 and R6 may be combined to form a ring. This polymer compound can provide a chemically amplified resist composition that is transparent to KrF or ArF excimer laser light and has a high resolution and is capable of forming a pattern having a rectangular section with no swelling.

Abstract: A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):

Abstract: A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

Abstract: Disclosed is a fluorine-containing polymer compound containing first and second repeating units respectively represented by formulas (a-1) and (a-2), wherein R3 represents a fluorine atom or fluorine-containing alkyl group, each of W and W1 independently represents a bivalent linking group, R2 represents an acid-labile protecting group, each of R4, R5 and R6 independently represents a hydrogen atom, fluorine atom or monovalent organic group, and at least two of R4, R5, R6 and W or W1 may be combined to form a cyclic structure in formula (a-1) or (a-2). This polymer compound has a weight-average molecular weight of 1,000 to 1,000,000 and can provide a resist composition capable of forming a pattern with no swelling and no pattern falling down.

Abstract: A near-field exposure apparatus includes a near-field exposure mask and a mechanism places a substrate, to be exposed, opposed to the near-field exposure mask. A mechanism performs relative alignment of the near-field exposure mask and the substrate to be exposed. A mechanism closely contacts the near-field exposure mask and the substrate to be exposed, with each other. A mechanism projects exposure light to the near-field exposure mask, and a soft X-ray irradiating device removes static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed such that the near-field exposure mask is located between the soft X-ray irradiating device and the substrate to be exposed.

Abstract: Method for detecting binding events using micro-X-ray fluorescence spectrometry. Receptors are exposed to at least one potential binder and arrayed on a substrate support. Each member of the array is exposed to X-ray radiation. The magnitude of a detectable X-ray fluorescence signal for at least one element can be used to determine whether a binding event between a binder and a receptor has occurred, and can provide information related to the extent of binding between the binder and receptor.

Abstract: A photosensitive composition includes (A) a compound represented by the following formula (I): wherein R1 to R13 each independently represents a hydrogen atom or a substituent, Z represents a single bond or a divalent linking group, and X? represents an anion containing a proton acceptor functional group.

Abstract: An industrial X-ray photosensitive material including at least one silver halide emulsion layer on both sides of a transparent support, wherein the silver halide emulsion layer contains tabular silver halide particles having an average particle thickness of less than 0.2 ?m and an aspect ratio of more than 8, a core of the particles which is a core having a volume of 1% or more and less than 3% of a particle volume does not contain Ir or Rh, and a shell of the particles which is a shell having a volume of 97% or more and less than 99% of a particle volume contains at least Ir or Rh. An industrial X-ray photosensitive material having rapid processing suitability, as well as high sensitivity and high contrast is provided.

Abstract: A resist composition for an electron beam, EUV or X-ray comprising (A1) a compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation.

Abstract: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

Abstract: Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.

Abstract: A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.

Abstract: The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by using a negative photoresist composition comprising a melamine derivative and polyvinylphenol.

Abstract: An image forming method applying X-ray exposure to a photothermographic material having, on at least one surface of a support, an image forming layer containing at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent for silver ions, and a binder, wherein the photothermographic material is brought into close contact with a fluorescence intensifying screen containing a fluorescent material that emits light, 50% or more of which has a wavelength in a range of 350 nm or more and 420 nm or less.

Abstract: The present invention is directed to a method of forming a positive image in a photothermographic element comprising a potentially negative-working emulsion wherein fog density development is imagewise inhibited in exposed areas of the image upon thermal development, the element further comprising a developer or precursor thereof and an oxidized developer scavenging agent to accelerate development by removing oxidized developer as it is formed during the thermal development step. In one embodiment of the invention, in which a density-inhibiting agent is released during thermal development that inhibits the thermal development of unexposed silver salts in the exposed areas relative to the unexposed areas, the method comprises imagewise exposing the film with a non-solarizing amount of radiation/energy to form a latent image and thermally developing the latent image in a single development step to produce a positive image in the element.

Abstract: The present invention is directed to a method of forming a positive image in a photothermographic element comprising a potentially negative-working emulsion wherein fog density development is imagewise inhibited in exposed areas of the image upon thermal development. In one embodiment of the invention, a density-inhibiting agent is released during thermal development which agent inhibits the thermal development of unexposed silver salts in the exposed areas relative to the unexposed areas. The method preferably comprises imagewise exposing the film with a non-solarizing amount of radiation/energy to form a latent image and thermally developing the latent image in a single development step to produce a positive image in the element. The present invention is also directed to a photothermographic element that can be used in the present process in which a positive image characterized by high speed and discrimination is formed when exposed and thermally heated above 150° C.

Abstract: A dark-field imaging method for detecting defects in reflective lithography masks (e.g., extreme ultraviolet (EUV) masks) used, e.g., in processes for the fabrication of microelectronic devices. A mask blank is coated with a photoresist layer having a fluorescent dye incorporated therein. The photoresist layer is exposed to a source of radiation (e.g., EUV radiation or glancing soft X-rays). In areas of the mask blank having defects the combined direct and reflected radiation will be insufficient fully to expose the photoresist layer. After development, photoresist will remain on the mask blank surface in areas corresponding to defects. Illumination with the excitation wavelength of the fluorescent dye reveals the location of any remaining photoresist, which can be detected using an optical microscope, thereby to detect defects in the mask blank.

Abstract: A radiation-sensitive composition comprising: (A) a compound capable of generating an acid upon irradiation with one of actinic rays and radiation, and (B) a resin containing a repeating unit having a specific group, which increases the solubility in an alkali developing solution by the action of an acid.

Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a f

Abstract: Photothermographic materials contain one or more blocked aliphatic thiol compounds in an amount of at least 1 mg/m2 as stabilizers. These compounds have a calculated octanol-water partition coefficient (c log P value) of 2.0 or greater, and an N value equal to or greater than 6.5.

Abstract: A radiographic imaging assembly comprises a symmetric radiographic silver halide film has an overall system speed of at least 1100 to provide images with improved contrast and sharpness and reduced fog. The imaging assembly includes a symmetric radiographic film having a speed of at least 700 that includes at least two silver halide emulsions on each side of the support that comprise tabular silver halide grains. The emulsions closer to the support comprise a suitable crossover control agent. The imaging assembly also includes a pair of phosphor intensifying screens that have an average screen sharpness measurement (SSM) greater than reference Curve A of FIG. 4. The screens can have a support that includes a reflective substrate comprising a continuous polyester phase and microvoids containing inorganic particles dispersed within the polyester phase.

Abstract: The invention provides a photothermographic material having, on both sides of a support, an image forming layer including at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent, and a binder, which is to be exposed with X-rays using a fluorescent intensifying screen, wherein (1) a coating amount of the photosensitive silver halide per one side is from 0.01 g/m2 to 0.45 g/m2 in terms of silver amount; and (2) a crossover (%) is 30% or more, or when parallel light having the same wavelength as a main emission peak wavelength of the fluorescent intensifying screen is incident perpendicular to the surface of the photothermographic material, the parallel light component of transmitted light comprises 5% or more of the incident light. A photothermographic material for medical use having high sensitivity and high image quality is provided.

Abstract: A photothermographic material having, on at least one side of a support, an image forming layer containing at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent, and a binder, and an X-ray image forming method using the same, wherein 50% or more of a total projected area of the photosensitive silver halide is occupied by tabular grains having an aspect ratio of 2 or more, and the grains have at least one epitaxial junction portion having a multifold structure. A photothermographic material with high sensitivity and excellent storage stability, and an image forming method using the material are provided.

Abstract: Photothermographic materials are coated with thermally developable imaging layers on both sides of the support. Such materials can be arranged in association with one or more phosphor intensifying screens capable of providing emission at a predetermined wavelength in imaging assemblies. These imaging assemblies can be exposed to X-radiation and thereby form a latent image in the photothermographic material that can eventually be heat developed and used for medical diagnosis. The photothermographic materials contain an opaque material that acts as a crossover control agent that absorbs radiation at the predetermined wavelength, for example at 300 to 450 nm, and has limited absorption at higher wavelengths. When the photothermographic material is heated, the opaque material loses its opacity. Additional crossover control agents, such as UV-absorbing compounds, can also be added to the support or to an antihalation layer.

Abstract: Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source. wherein R1, R2, R3, R4, R5, R6, R7, a, b and c are as defined in the description.

Abstract: The present invention provides new high resolution nanocomposite resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite negative resists comprising a photoacid generating component, a styrene component, and an optional polyhedral oligosilsequioxane component are provided. Negative resists of this invention may also contain an optional methacrylate component. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator: Chemical Formula 1: wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and R2 is a protecting group released by an acid.

Abstract: A phosphor screen comprises an inorganic phosphor capable of absorbing X-rays and emitting electromagnetic radiation having a wavelength greater than 300 nm. The phosphor is disposed on a support that has a reflective substrate comprising a continuous polyester first phase and a second phase dispersed within the continuous polyester first phase. The second phase contains microvoids that in turn contain barium sulfate particles. This support provides improved reflectivity particularly at shorter wavelengths.

Abstract: Photothermographic materials are designed with increased photospeed by chemical sensitizing the photosensitive silver halide grains with a combination of compounds. A first chemical sensitizer is a specific gold(III)-containing compound and a second chemical sensitizer is a sulfur-containing compound that is a diphenylphosphine sulfide. The molar ratio of the gold (III)-containing compound to the sulfur-containing compound is at least 1:1.

Abstract: A reflective radiographic material is useful to provide images that can be viewed without a light box. This reflective radiographic material has a reflective support and a silver halide emulsion on one side of the support only. The material can be used with a single green- or blue-light emitting fluorescent intensifying screen as part of an imaging assembly. The reflective support enables the image in the radiographic material to be viewed without a light box and the speed of the material enables the use of low power X-radiation generating equipment.

Abstract: A reflective radiographic material (at least 200 system speed) is useful especially to provide images that can be viewed without a light box. This reflective radiographic material has a reflective support, a silver halide emulsion on one side of the support only, and a photographic speed of at least 200. The reflective material also includes an incorporated black-and-white developing agent and a co-developing agent, and can be used with a single fluorescent intensifying screen as part of an imaging assembly. The reflective support enables viewing the resulting image without a light box and the high speed of the material enables the use of low power X-radiation generating equipment. The incorporated black-and-white developing agent and co-developing agent allow the radiographic material to be quickly processed after exposure using simplified processing chemistry.

Abstract: The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A photolithographic method of making an information storage device having different storage characteristics at a plurality of discrete memory locations thereon, comprises the steps of: (a) providing a substrate having a surface portion, said surface portion having a linking group coupled thereto or charge storage group coupled thereto, said linking group or charge storage group having a photocleavable protecting group thereon; (b) exposing at least one first discrete segment of said surface portion to radiant energy sufficient to cleave said protecting group from said linking group or charge storage group and generate a deprotected group, so that said group is deprotected in at least one first discrete memory location and preferably said group remains protected in at least one second discrete memory location. Additional groups are then coupled to the deprotected group as desired. Products produced by such methods are also described.

Abstract: A radiographic imaging assembly comprises a symmetric radiographic silver halide film has an overall system speed of at least 200 but less than 800 to provide images with improved contrast and sharpness and reduced fog. The imaging assembly includes a symmetric radiographic silver halide film having a speed of at least 700 that includes two silver halide emulsions on both sides of the support that comprise tabular silver halide grains. The emulsions closer to the support comprise a suitable crossover control agent. The imaging assembly also includes a pair of phosphor intensifying screens that have a screen sharpness measurement (SSM) greater than reference Curve A of FIG. 4. The screens can have a support that includes a reflective substrate comprising a continuous polyester phase and microvoids containing inorganic particles dispersed within the polyester phase.

Abstract: A high-speed (over 700) radiographic silver halide film is useful for radiography to provide images with improved contrast and sharpness and reduced fog. The film includes at least one tabular grain silver halide emulsion layer on each side of a film support which grains are dispersed in a hydrophilic polymeric vehicle mixture comprising at least 0.05% of oxidized gelatin, based on the total dry weight of the hydrophilic polymeric vehicle mixture. Where multiple silver halide emulsion layers are disposed on each side of the film support, the emulsion layers closest to the support on each side can include crossover control agents to reduce crossover to less than 15%.

Abstract: An ultra-high-speed radiographic imaging assembly (at least 900 system speed) is useful especially for pediatric radiography to provide images with improved contrast and sharpness and reduced fog. The imaging assembly includes a symmetric film having a speed of at least 400 that includes at least two silver halide emulsion layers on each side of a film support that comprise tabular silver halide grains. The imaging assembly also includes two fluorescent intensifying screens wherein the pair of screens has a screen speed of at least 400 and the screens have an average screen sharpness measurement (SSM) value greater than reference Curve A of FIG. 4. The screens can have a support that includes a reflective substrate comprising a continuous polyester phase and microvoids containing inorganic particles dispersed within the polyester phase.