Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: A system and method for exposing a layer of resist on a target such as a semiconductor wafer are provided. An optical system includes a step and repeat projection aligner, and a mask having adjacent complementary pattern segments arranged in an alternating array of columns and rows. The method includes exposing the layer of resist in multiple stages by directing exposure energy through the mask onto the target. During each stage the target can be stepped through unequal stepping distances. A first stepping distance can be a width of a single pattern segment, and a second stepping distance can be a combined width of multiple pattern segments. The unequal stepping distances permit the complementary pattern segments to be initially exposed, and then overlayed on the target using relatively short stepping distance across most of the target.

Abstract: A high capacitance storage node structure is created in a substrate by patterning a hybrid resist (12) to produce both negative tone (16) and positive tone (18) areas in the exposed region (14). After removal of the positive tone areas (18), the substrate (12) is etched using the unexposed hybrid resist (12) and negative tone area (16) as a mask. This produces a trench (22) in the substrate (12) with a centrally located, upwardly projecting protrusion (24). The capacitor (26) is then created by coating the sidewalls of the trench (22) and protrusion (24) with dielectric (28) and filling the trench with conductive material (30) such as polysilicon.

Abstract: A novel X-ray intensifying screen is detailed comprisingBaHf.sub.1-x Zr.sub.x (PO.sub.4).sub.2wherein x is 0.0 to 1.0. Further detailed is a radiographic recording element employing the same screen. This novel X-ray intensifying screen has excellent conversion efficiency to ultraviolet emission.

Abstract: There is provided a silver halide photographic, black-and-white medical hard copy material, comprising an opaque reflecting polymeric support and at least one hydrophilic colloid outermost layer, characterized in that:(i) the material comprises a silver halide emulsion layer A and a silver halide emulsion layer B, coated on the same side of said support, the emulsion layer B being closest to said support and(ii) the silver halide emulsion layer A is faster than the silver halide emulsion layer B.Emulsion layer A is preferably between 1.25 and 3.20 times faster than emulsion layer B.A method is also provided for printing radiological images in combination with the protocol describing said radiological images onto a single sheet of hard-copy film.

Abstract: A silver halide photographic material comprises a support, at least one silver halide emulsion layer and at least one non-light-sensitive hydrophilic colloidal layer. The silver halide emulsion layer or the hydrophilic colloidal layer contains a colorant having the absorption maximum wavelength within the infrared region of 700 to 1,100 nm. The colorant is in the form of solid particles dispersed in the silver halide emulsion layer or in the hydrophilic colloidal layer. The solid particles cannot substantially be removed by a processing solution of the silver halide photographic material. An image forming process employing the silver halide photographic material is also disclosed.

Abstract: A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, 38,39,40,41,42-hexamethoxycalix?6!arene sensitive to a high-energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.

Abstract: An all-dry microlithography process, where a fluorinated layer 30 is deposited on a processable layer 18 of a semiconductor wafer, and regions of the fluorinated layer 30 are exposed to a masked radiation source so that exposed regions and unexposed areas 31 are formed in the fluorinated layer 30. An oxide layer is grown on the fluorinated layer, forming thicker region 34 of oxide on the unexposed areas 31 of the fluorinated layer 30, and forming thinner regions 32 of oxide on the exposed regions of the fluorinated layer 30. The oxide layer is then etched, removing thinner regions 32 of the oxide layer but leaving at least a fraction of the thicker portions 34 of the oxide layer to be used as a patterned hard mask. Then the exposed fluorinated layer not covered by the patterned oxide hard mask, is etched, to expose areas of the processable layer 18 not covered by the oxide hard mask, for subsequent patterned processing.

Abstract: An X-ray source such as a synchrotron which provides a significant spectral content of hard X-rays is used to expose relatively thick photoresist such that the portions of the photoresist at an exit surface receive at least a threshold dose sufficient to render the photoresist susceptible to a developer, while the entrance surface of the photoresist receives an exposure which does not exceed a power limit at which destructive disruption of the photoresist would occur. The X-ray beam is spectrally shaped to substantially eliminate lower energy photons while allowing a substantial flux of higher energy photons to pass through to the photoresist target. Filters and the substrate of the X-ray mask may be used to spectrally shape the X-ray beam. Machining of photoresists such as polymethylmethacrylate to micron tolerances may be obtained to depths of several centimeters, and multiple targets may be exposed simultaneously.

Abstract: A process for efficient modification and metallization of substrates includes the steps of providing a substrate with highly photoefficient chemical functional groups on at least a portion of this substrate, exposing the substrate to actinic radiation to transform, deactivate, or remove these chemical functional groups, to modify their chemical reactivity, and carrying out further chemical reaction steps on these modified chemical functional groups.

Abstract: A method for making molds for use in manufacturing multiple-lead microstructures is disclosed. Each of the molds comprises a set of punch head molds and a set of matching die plate molds, and the method comprises the steps of (a) dividing the multiple-lead microstructure into a plurality of portions, each portion is to be prepared by a pair of a punch head, which contains a plurality of prutrusions, and a die plate, which contains a plurality of matching recesses; (b) preparing each of the punch head molds using a first lithographic technique; and (c) preparing each of the die plate molds using a second lithographic technique.

Abstract: A resin or amorphous carbon layer is coated on a substrate and then fluorinated by exposing it in a F.sub.2 gas atmosphere. The thus fluorinated resin or amorphous carbon layer can be excellent in dielectric constant and thermal resistance. The resin may be photo-sensitive so that the resin can be patterned before the fluorination. Alternatively, the resin can be fluorinated before patterning.

Abstract: A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R.sub.1 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alkyl, alkyl substituted phenyl, alkoxy substituted phenyl, acetoxy substituted phenyl, hydroxy substituted phenyl, t-butyloxycarbonyloxy substituted phenyl, diphenyl alkyl, alkyl substituted diphenyl, alkoxy substituted diphenyl, alkyl substituted diphenyl alkyl, or alkoxy substituted diphenyl alkyl; and R.sub.2 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy substituted cyclo alkyl, alkyl substituted phenyl, alkoxy substituted phenyl, hydroxy substituted phenyl, acetoxy substituted phenyl, or t-butyloxycarbonyloxy substituted phenyl.The present invention also provides a method of making microelectronic structures.

Abstract: A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

Abstract: A medical X-ray film comprising a transparent base coated on at least one side with (a) a laminar grain silver halide emulsion and (b) a separate hydrophillic colloid layer containing a developing agent for silver halide in an amount corresponding to at least 0.5 moles per mole of the silver coated on that side of the base.

Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

Abstract: Thin films of substantially pure soluble polythiophenes and oligothiophenes undergo cross-linking and insolubilization upon irradiation with UV/visible light, without additives. Irradiation of thin polymer films through a photomask and subsequent development with solvent leaves a polymeric image of the mask. The resulting .pi.-conjugated polymeric pattern can be rendered electronically conducting by oxidation. The electronic conductivity of these films is high and is similar to that found for oxidized, non-irradiated films. Furthermore, the conductivity can be regulated over eight orders of magnitude by controlled oxidation. Thus, the fabrication of electronically conducting, organic "wires" or "channels" using conventional semiconductor photolithographic techniques can be achieved.

Abstract: A photostimulable phosphor of which the emission intensity at the stimulation wavelength of 550 nm is higher than the emission intensity at the stimulation wavelength of 600 nm, characterized in that said phosphor is a divalent europium activated barium fluorobromide containing as codopant samarium, and wherein the terminology barium fluorobromide stands for an empirical formula wherein (1) a minor part of the barium (less than 50 atom %) is replaced optionally by at least one metal selected from the group consisting of a monovalent alkali metal, a divalent alkaline earth metal other than barium, and a trivalent metal selected from the group consisting of Al, Ga, In, Tl, Sb, Bi, Y, and a rare earth metal selected from the group consisting of Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, (2) a minor part (less than 50 atom %) of the bromine is replaced by chlorine, and/or iodine, and (3) wherein fluorine is present stoichiometrically in a larger atom % than bromine taken alone or bromine combined with chlorin

Abstract: A photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a crosslinking agent. The crosslinking agent comprises a water soluble sugar. The present invention also provides a method of making microelectronic structures.

Abstract: A method of forming a microstructure having a higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer mainly including a copolymer of methylmethacrylate and methacrylic acid is formed relatively thick on a substrate. Lithography by synchrotron orbital radiation is carried out on the resist layer, to form a resist pattern. By carrying out normal electroplating, electro-forming or the like in accordance with the resist pattern, a microstructure having a high aspect ratio is obtained.

Abstract: A light-sensitive silver halide photographic material is disclosed. The light-sensitive material comprises transparent support having on each side, side-A and side-B, thereof a silver halide emulsion layer and has a specified balance in speeds of the emulsion layers each provided on side-A and side-B. A specimen obtained by exposing said light-sensitive material from its one side, side-A, followed by processing has a density higher than fog density of side-B by 0.10 or more on side-B of said light-sensitive material when the amount of exposure gives a density higher than fog density of side-A by 0.2; and a density higher than fog density of side-B by 0.70 or less on side-B of said light-sensitive material when the amount of exposure gives a density higher than fog density of side-A by 1.60. The light-sensitive material suited as a film for X-ray photography and gives an image having excellent sharpness and graininess.

Abstract: The invention relates to a process for producing microstructure elements having structure depths of from several .mu.m to the mm region by imagewise irradiation of polymers with X-rays, where the polymers employed are aliphatic polyesters.

Abstract: To eliminate the "pi-line" artefact after processing a silver halide industrial photographic X-ray material is disclosed comprising on at least one side of a support, at least one gelatino silver halide emulsion layer and a total amount of silver halide, corresponding to from 6 to 20 g of silver nitrate per square meter and per side, and at least one non-sensitive protective antistress coating, wherein said photographic material comprises at least one vinyl sulphone compound as a hardening agent and at least one polyoxyalkylene compound as a surfactant in at least one of its hydrophilic layers.

Abstract: The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.

Abstract: In one embodiment of the invention x-rays pass through an aluminum filter (18) to form filtered x-rays. At least a portion of the filtered x-rays then pass through a portion of a x-ray mask (22) to expose a portion of a photoresist layer overlying a semiconductor substrate. The aluminum filter removes high energy photons from the x-ray spectrum that adversely effect the lithographic patterning process.

Abstract: A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylating reagent is combined with a cross-linking reagent. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.

Abstract: Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

Abstract: A method for forming a radiological image using a silver halide photographic material comprising a transparent support having at least one silver halide emulsion layer on one side thereof and a backing layer on the opposite side to the silver halide emulsion layer, and a radiographic intensifying screen, wherein the radiographic intensifying screen has such characteristics that the absorbed dose is at least 25% of X-rays having an X-ray energy of 80 KVp, and the contrast transfer function (CTF) is at least 0.79 at a spatial frequency of 1 line/mm and at least 0.36 at a spatial frequency of 3 lines/mm.

Abstract: A medical radiographic element comprising a base bearing on each of its two major surfaces a layer of photographic silver halide emulsion sensitive to green light, said element having between the base and at least one silver halide layer a hydrophilic colloid layer containing a dye having a nucleus of the general formula: ##STR1## wherein: each R independently represents an alkyl group,each Y independently represents an electron attracting group andeach X represents a water solubilising group.

Abstract: The invention relates to an image plate (1) for intra-oral dental X-ray photography, the plate being placed in a shield (3) enveloping it for the duration of photography. According to the invention the shield has been made pervious to X-rays but impervious to visible light, and it comprises a closed shielding bag of plastic membrane. The shield may be made up of an inner shielding bag (3) impervious to light and a surrounding closed outer shielding bag which may be of transparent plastic membrane. After photography, the possible outer bag is first removed, the patient's saliva being removed along with it. Thereafter the image plate (1) and the surrounding shielding bag (3), one end (6) of which has been opened or, if an outer bag is used, is possibly already open, are introduced into the read-out apparatus, in which a pulling device grips the end of the plate in the bag, whereafter the bag can be pulled out while the plate remains in the read-out apparatus for the reading out of the image.

Abstract: A novel method of forming radiation images, especially X-ray images of bones and gastric areas for medical examination, is disclosed.

Abstract: Disclosed is a silver halide photographic material for X-ray photography which has at least one light-sensitive silver halide emulsion layer on each side of a transparent support and constitutes a radiation image-forming system in combination with two radiation-intensifying screens respectively arranged on the front and the back sides of the photographic material. The photographic material is characterized by having a crossover rate of at most 15% with respect to the light emitted from said intensifying screens, and by producing an image having a characteristic curve such that when drawn using crossed coordinates equal to each other in unit length, with diffusion density as ordinate (Y-axis) and common logarithm of exposure amount as abscissa (X-axis), the characteristic curve provides a point gamma value ranging from 2.7 to 4.2 at every point within the optical density (diffusion density) range of 1.6 to 2.0 and a point gamma value of at least 0.

Abstract: To eliminate the "pi-line" artefact after processing a method of image formation in a silver halide industrial X-ray photographic material is disclosed wherein said material comprises on at least one side of a support, at least one gelatino silver halide emulsion layer and a total amount of silver halide, corresponding to from 6 to 20 g of silver nitrate per square meter and per side, and at least one non-sensitive protective antistress coating and wherein said method proceeds by the steps of exposing said material to direct X-rays and processing the material in an automatic processing machine by development, fixing, rinsing and drying, characterized in that said material further comprises at least one vinyl sulphone compound as a hardening agent in at least one of its hydrophilic layers, that development occurs in a developer comprising as a surfactant at least one anionic alkylphenoxy and/or alkoxy polyalkyleneoxy phosphate ester, sulphate ester, alkyl carboxylic, sulphonic or phosphonic acid and/or a salt

Abstract: A photographic silver halide material for industrial radiography comprises a film support and on one or both sides thereof a silver halide emulsion rich in silver chloride and a silver halide emulsion rich in silver bromide either in admixture in the same layer or in contiguous layers. The ratio by weight of colloid binder, e.g. gelatin, to silver halide (expressed as silver nitrate) is from 3:10 to 6:10 and the amount of silver halide corresponds to from 6 g to 20 g of silver nitrate per square meter and per side. The material has been forehardened to an extent such that when it is immersed in demineralised water of 25.degree. C. for 3 minutes there is absorbed less than 2.5 g of water per gram of binder. The material can be processed within a total processing time of less than 5 minutes with a developer and fixer being substantially free from hardening agents and the fixer being substantially free from ammonium ions.

Abstract: Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.

Abstract: Devices built to design rules .ltoreq.0.25 .mu.m are pattern delineated by use of synchrotron-emitted x-ray radiation using a condenser which collects over a collection arc of at least 100 mrad. Condenser designs provide for processing of collected radiation to tailor characteristics such as direction and divergence. Pattern delineation by proximity printing as well as by projection printing is described. Forms of projection printing include reduction ringfield projection as by 5:1 mask:image reduction.

Abstract: Disclosed is an improvement of a method for erasing a radiation image remaining in a stimulable phosphor sheet which has stored a radiation image and has been irradiated with stimulating rays to read the radiation image. The improvement comprises a first erasing step of irradiating the phosphor sheet with a first erasing light containing a light portion of wavelength in ultraviolet region; and a second erasing step of irradiating the phosphor sheet with a second erasing light containing no light portion of wavelength in ultraviolet region, said second erasing light and said first erasing light being employed in a ratio of amount of light in the range of 15/85 to 45/55. Devices for erasing radiation image appropriately employable in the above-mentioned method are also disclosed.

Abstract: A process for the production of micromoldings having a high aspect ratio by imagewise irradiation of a polymer with high-energy, parallel radiation from an X-ray source employs, as the polymer, a homo- or copolyoxymethylene.

Abstract: A multilayer photoresist includes an X-ray photoresist layer photosensitibe to X rays formed on a substrate, and a photoresist layer containing an X-ray absorbing agent formed on the X-ray photoresist layer. When the multilayer photoresist is selectively exposed to, for example, an I line (one spectrum), and developed, a mask to be used in the subsequent exposure to X rays is formed in the photoresist layer containing the X-ray absorbing agent. The X-ray photoresist layer on the substrate is then exposed to X rays by using the mask formed in the photoresist layer, and is developed, a resist pattern is obtained.

Abstract: An X-ray grid is produced by exposing of a photosensitive glass with a differential of solubility not less than 25 and with a radiation having a wavelength shorter than a wavelength of ultraviolet radiation.

Abstract: In the formation of microstructures, a preformed sheet of photoresist, such as polymethylmethacrylate (PMMA), which is strain free, may be milled down before or after adherence to a substrate to a desired thickness. The photoresist is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the photoresist material which has been rendered susceptible to the developer. Micrometal structures may be formed by electroplating metal into the areas from which the photoresist has been removed. The photoresist itself may form useful microstructures, and can be removed from the substrate by utilizing a release layer between the substrate and the preformed sheet which can be removed by a remover which does not affect the photoresist. Multiple layers of patterned photoresist can be built up to allow complex three dimensional microstructures to be formed.

Abstract: A method to produce nonlinear optical microcomponents is described which makes it possible to employ material combinations not yet used to date. By means of X-ray depth lithography not only waveguide structures, but also microcell structures are produced, into which subsequently material of nonlinear optical properties is placed. By means of X-ray depth lithography and micromolding techniques a mold insert with a waveguide structure is produced as a positive mold, and the waveguide structure is impressed into a polymer base material by means of the mold insert. Then the impressed waveguide structure is filled with optically linear material, and after the filling operation at least one microcell structure is produced, at least in the areas of the optically linear material, into which microcell structure optically nonlinear material is placed. The microcell structure may also be impressed by means of another mold insert.

Abstract: A method to produce nonlinear optical microcomponents is described which employs hitherto not yet used material combinations. Not only waveguide structures are produced by means of X-ray depth lithography, but also microcell structures, into which materials having nonlinear optical properties are introduced. The microstructure is produced as a positive mold part, from which there is subsequently generated, by means of electroforming, a mold insert, a negative of which is made using a polymer material. After the molding operation the microstructure is applied to a substrate, and nonlinear optical material, covered by a cover plate if needed or desired, is introduced into the microcell structure.

Abstract: Dental X-ray films for the direct absorption of x-radiation are disclosed in which silver halide emulsion layers are coated on the opposite faces a transparent film support. To achieve direct absorption of X-radiation with the low image noise levels required for dental diagnostics while enhancing image invariance as a function of processing solution seasoning silver halide grains containing less than 5 mole percent iodide, based on silver, forming the emulsion layers are coated on each face of the support at a silver coverage of greater than 7.5 g/m.sup.2, greater than 75 percent of total grain projected area being accounted for by tabular grains having an average equivalent circular diameter of less than 5.0 .mu.m, an average thickness of less than 0.36 .mu.m, and an average aspect ratio of at least 5.

Abstract: An X-Ray sensitive composition including one or several photopolymerizable monomer or photocrosslinkable polymer systems and thermochromic substances which can be used in a dry X-Ray reproduction process. The process is based on the different dielectric constants and dielectric losses exhibited by a monomer and the corresponding polymer or a polymer and the crosslinked polymer and the reaction of certain thermochromic substances which exhibits a specific threshold temperature above which these substances change from a colorless form to a color stable form. The X-Ray sensitive element is exposed according to a pattern of X-Ray with spatial modulation providing an X-Ray image to form a latent image of polymerized or crosslinked zones and unpolymerized or non crosslinked zones.

Abstract: A radiographic assembly comprising:a radiographic element which comprises a support and a front and back pair of silver halide emulsion layers coated on the opposite sides of the support, anda front and back pair of intensifying screens adjacent said front and back emulsion layers, respectively,wherein at least one of said silver halide emulsion layers shows a swelling index lower than 140% and a melting time of from 45 to 120 minutes, and the contrast difference between said pair of silver halide emulsion layers is at least 0.5,wherein the X-ray stimulated light emission difference between said pair of intensifying screens is at least 0.6 IogE, andwherein the average imagewise cross-over of said radiographic element is lower than 5% at optical density of from 0.5 to 1.75 and in the range of from 5 to 15% at optical density of from 1.75 to 3.25, said imagewise cross-over being measured according to the formula described in the specificaton.

Abstract: A photosensitizer comprising a diazo ester of benzolactone ring compound, such as phenolphthalein or cresolphthalein as the backbone, where at least one of the hydroxy groups on benzolactone ring has been esterified with diazo-sulfonyl chloride consisting of 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride or a mixture thereof, and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition and a suitable solvent.

Abstract: An integrated light deflector and fabrication method are disclosed. In accordance with the method, a mold is constructed above the surface of a substrate using a thick photo resist and a mask to define a deflector plane. A collimated light beam is applied at an appropriate angle of incidence to the photo resist material and mask. The developed resist provides a mold into which the deflector body is cast, leaving a deflector body whose front surface serves as the deflecting surface.

Abstract: A process for the production of micromoldings having a high aspect ratio by imagewise irradiation of a polymer with high-energy, parallel radiation from an X-ray source employs, as the polymer, a copolymer comprising SO.sub.2 and one or more ethylenically unsaturated organic compounds.

Abstract: A method for digital imaging employing a green light laser. The method comprises obtaining a digitized picture image, modulating a green light laser beam in accord with the digitized picture image, and directing the modulated laser beam onto film that is sensitive to green-blue light. The film is then developed to create a gray-scale image useful in radiography and other imaging fields.