Abstract: A heat treatment apparatus for heating, in a treatment container, a substrate on which a coating film is formed. The heat treatment apparatus includes: a mount provided in the treatment container and which mounts the substrate thereon; a heating part that heats the substrate mounted on the mount; a suction pipe leading to a suction port formed in the mount, penetrating the mount, and extending directly downward; and a collection container provided on a suction path between the suction pipe and a suction mechanism. The collection container is provided directly below the mount in plan view and connected to the suction pipe to collect a sublimate in the treatment container.

Abstract: An adjustable variable atmospheric condition testing apparatus for testing an object includes an outer chamber, an inner chamber positioned inside and in fluid communication with the outer chamber, a vacuum pump configured to remove gas from the inner and outer chambers, and further configured to expel the removed gas via an exhaust, an intake configured to selectively introduce gas from ambient into the inner chamber via a valve, such that the introduced gas interacts with the object, and a sensor positioned downstream of the object and configured to detect a characteristic of the gas interacting with the object.

Abstract: Disclosed is a vertical heat treatment apparatus. The apparatus includes: a heat treatment furnace provided with a furnace inlet at a lower end thereof; a cover unit disposed on the furnace inlet of the heat treatment furnace; a cover unit opening/closing mechanism configured to support the cover unit in a cantilever manner from a bottom side of the cover unit; and an auxiliary mechanism configured to press the cover unit from the bottom side of the cover unit when the cover unit is disposed on the furnace inlet. The auxiliary mechanism is provided with a toggle mechanism.

Abstract: An apparatus for sealing a fan drive shaft in a vacuum heat treating furnace is disclosed. The sealing apparatus includes a housing having an annular body and a central opening. An inflatable first seal surrounds the central opening of the annular body. A second seal surrounds the central opening and is adjacent to the inflatable first seal. The sealing apparatus also includes a channel formed in the annular body adjacent to the second seal for conducting a purging fluid into the central opening. A means for injecting the purging fluid into the central opening is operably connected to the channel. A vacuum heat treating furnace and a fan drive system incorporating the sealing apparatus are also described.

Abstract: A high pressure container includes a casing disposed in a housing and spaced from the housing for forming a peripheral space between the housing and the casing, the casing includes a compartment and spaced from the peripheral space that is formed between the housing and the casing, and a pressurizing device is connected to the compartment of the casing with a pipe for supplying a heated or pressurized air into the casing in order to heat or pressurize the work piece to the required higher pressure or temperature, and the pressurizing device is coupled to the peripheral space that is formed between the housing and the casing with a tube for supplying a pressurized air into the peripheral space for balancing the pressure.

Abstract: A pressing arrangement for treatment of articles by hot pressing includes a pressure vessel including a furnace chamber and a furnace to hold the articles. A fan circulates a pressure medium within the furnace chamber, and enhances an inner convection loop at a load compartment. The inner convection loop pressure medium has an upward flow through the load compartment, and a downward flow along a peripheral portion of the furnace chamber. A flow generator generates a flow of pressure medium into the load compartment downstream the fan to enhance the inner convection loop. The flow is generated by transporting the pressure medium upwards from a space below a bottom insulating portion and above a bottom end portion, and by injecting the pressure medium into the load compartment downstream the fan to enhance the inner convection loop.

Abstract: For a simplified method for heating a pre-warmed muffle used for dental ceramics in a dental furnace, wherein a saving of time in heating before the pressing and also a parallel heating of the muffles should be made possible, the following steps are suggested: a) heating of the muffle to a maximal temperature (Tmax), which is above the pressing temperature (Tpress), in which pressing is carried out, b) possibly keeping the muffle at a maximal temperature (Tmax) during a first pause (t-1), c) cooling of the muffle to a minimal temperature (Tmin), which is at most as high as the pressing temperature (Tpress), and d) keeping the muffle at a minimal temperature (Tmin) during a second pause (t2). In addition, a corresponding control device for the dental furnace and a furnace equipped with this kind of control device are produced.

Abstract: A high-pressure press is disclosed which includes a high-pressure vessel enclosing a high-pressure chamber and a high-pressure medium; a housing, separating a volume from the high-pressure press chamber, arranged for holding a fluid; a fan arranged in the high-pressure press chamber outside the housing for circulating the high pressure medium in the high-pressure press chamber; a motor, arranged in the housing and operatively connected to the fan for driving the fan; a cooling device for cooling a portion of the housing wall; and a pumping device arranged for circulating the fluid, the fluid providing a transfer of cold from the portion of the housing wall to the motor, the cooled circulation of the fluid being separated from the high-pressure press chamber by the housing.

Abstract: The present invention relates to an arrangement for treatment of articles by hot pressing. The pressing arrangement for treatment of articles by hot pressing comprises a pressure vessel including: a furnace chamber comprising a heat insulated casing and a furnace adapted to hold the articles. A heat exchanger unit is arranged below said furnace chamber and adapted to exchange thermal energy with pressure medium when the pressure medium is passing through said heat exchanger unit. According to the present invention, at least one first and second inlet or aperture, respectively, for passage of alternating warm and cold pressure medium are arranged in the heat insulated casing in proximity to the heat exchanger unit (i.e. at approximately same the height as, above or below the heat exchanger unit). The at least one second inlet (or lower inlet) is below the at least one first inlet (or upper inlet) but at same height as or below the heat exchanger unit.

Abstract: A method of cooling a load provided in a load compartment in a furnace chamber of a furnace of a hot isostatic pressing device includes releasing hot pressure medium from the load compartment. Cool pressure medium is provided for enabling it to fall through the released hot pressure medium outside the load compartment. The thus obtained mixed pressure medium is led into the load compartment. A hot isostatic pressing device includes a load compartment having an aperture near an upper portion thereof configured to vent warm pressure medium into a region surrounding the compartment and a conduit configured to introduce cool pressure medium into the region surrounding the compartment for mixing with the warm medium. The compartment also includes an aperture near a lower portion thereof configured to receive a mix of warm and cool pressure medium from the region surrounding the compartment.

Abstract: Provided is a heat treatment container for a vacuum heat treatment apparatus. The heat treatment container includes a bottom and a sidewall. An exhaust passage is defined in an upper portion of the sidewall.

Abstract: The invention relates to a method for producing a high temperature superconductor (HTSC) from a strip including an upper side precursor layer and which, for continuous sintering of the precursor layer within a furnace in the presence of a fed-in reaction gas, is drawn across a support. A furnace for performing the method is also described.

Abstract: A cooling system for a dental porcelain furnace speeds up the cycle time for the furnace.

Abstract: In an aspect of at least one embodiment of the invention, there is provided a hot isostatic pressing arrangement for treatment of articles by hot isostatic pressing. The arrangement includes a pressure vessel including a furnace chamber including a heat insulated casing and a furnace for heating of a pressure medium during pressing, and a ‘heat exchanger unit’ or heat absorbing material located below the furnace chamber. In another aspect of at least one embodiment of the invention, there is provided a method for treatment of articles in a hot isostatic press. The press further includes a pressure vessel enclosing a furnace chamber and a ‘heat exchanger unit’. The method includes the steps of loading the articles into the furnace chamber, performing pressurized and heated treatment of the articles, cooling the articles and unloading of the articles. All the steps are performed while the ‘heat exchanger unit’ remains located inside the pressure vessel.

Abstract: An improved autoclave for curing retread tires includes a chamber with circulating air flow having turbulence generating devices located in a middle length-wise portion of the chamber. The turbulence generating devices include apertures to guide air from a supply duct into the chamber, and/or wedge-shaped elements or fins mounted on the interior wall of the chamber to disrupt the air flow and cause turbulence.

Abstract: A pusher furnace includes furnace sections having respective susceptors, a slide rail extending through the furnace sections for sliding pusher plates thereon and an alignment assembly for aligning the susceptors and slide rails of adjacent furnace sections. A support structure spaces the susceptors from insulation therebelow to protect the insulation from degradation from contact with the susceptors. The susceptors are slidably mounted on the support structure to accommodate thermal expansion and shrinkage of the susceptor. The upstream end of the slide rails have beveled upper edges to help prevent the pusher plates from catching thereon. The upstream ends are also laterally tapered to reduce the degree of force encountered should a pusher plate catch thereon. Adjacent insulation members have expansion joints filled with a refractory felt. The susceptors slidably and sealingly engage exhaust ports to allow for thermal expansion and shrinkage of the susceptor without damaging the exhaust port.

Abstract: A double-chamber type heat-treating furnace comprises a hermetically closable cooling furnace, a hermetically closable heating furnace, and a transfer unit. The transfer unit has free rollers disposed within the heating and cooling chambers and for supporting the object at only both ends in a direction of width thereof, a push-pull member moving while being engaged with the object to push or pull the object, and a drive unit provided at a position adjacent to the heating chamber on a side opposite to a side on which the cooling chamber is disposed and driving the push-pull device.

Abstract: An apparatus for sealing a fan drive shaft in a vacuum heat treating furnace is disclosed. The sealing apparatus includes a housing having an annular body and a central opening. An inflatable first seal surrounds the central opening of the annular body. A second seal surrounds the central opening and is adjacent to the inflatable first seal. The sealing apparatus also includes a channel formed in the annular body adjacent to the second seal for conducting a purging fluid into the central opening. A means for injecting the purging fluid into the central opening is operably connected to the channel. A vacuum heat treating furnace and a fan drive system incorporating the sealing apparatus are also described.

Abstract: A vacuum furnace with a gas manifold branching into a plurality of secondary gas manifolds, the secondary gas manifolds each including a valve that is contained in each secondary gas manifold; a hot gas plenum including an inner and an outer shell with the outer shell attached at one side to the secondary gas manifold; a series of gas restrictor walls between the inner and outer shells of the hot gas manifold that serves the purpose of dividing the plenum into a plurality of non-circumferential sectors so that the load in the plenum may be cooled from the top, bottom, left, or right side or any combination thereof.

Abstract: An apparatus includes a first enclosure, a first door, at least one first valve, at least one inlet diffuser and at least one substrate holder. The first enclosure has a first opening. The first door is configured to seal the first opening. The first valve is coupled to the first enclosure. The inlet diffuser is coupled to the first valve and configured to provide a first gas with a temperature substantially higher than a temperature of an environment around the first enclosure. Each substrate holder disposed within the first enclosure supports at least one substrate.

Abstract: A gas cooling type vacuum heat-treating furnace according to the present invention, includes a gas cooling furnace comprising a cooling chamber in which an article to be heat-treated is stationarily set, and defining therein a gas passage in a vertical direction, a gas cooling and circulating device for cooling and circulating gas flowing in the cooling chamber, a gas direction switching device for alternately changing over directions of gas vertically passing through the cooling chamber, and upper and lower straighteners blocking upper and lower ends of the cooling chamber, for causing a velocity distribution of the gas to be uniform.

Abstract: In a system for thermally processing materials, at least one slot eductor is disposed in a wall or roof surface of the furnace chamber to provide circulation of gas within the furnace chamber.

Abstract: A vacuum furnace adapted to cool a load. The vacuum furnace has one or more means for cooling a fluid and a muffle substantially comprised of carbon fiber composite and substantially containing the load. The fluid flows in a substantially unidirectional flow substantially within the muffle.

Abstract: A diffusion furnace of semiconductor manufacturing equipment is cleaned efficiently with a cleaning gas (ClF3) by using an auxiliary cleaner. The auxiliary cleaner is inserted into an inner tube of the wafer diffusion furnace. The auxiliary cleaner has a cylindrical body that occupies a central region of the interior of the furnace but is spaced apart from an inner wall surface of the inner tube. Accordingly, the gas is confined to a peripheral region adjacent the inner wall surface. As a result, a relatively small amount of the cleaning gas is comsumed during the cleaning process.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: An apparatus (100, 100′, 100″) and a method serve to continuously produce a cooked and vacuumized confectionery mass. The apparatus (100, 100′, 100″) includes a boiling apparatus (3), an evaporating chamber (8), a conduit (7) connecting the boiling apparatus (3) to the evaporating chamber (8) and a pressure maintaining valve (9). The pressure maintaining valve (9) is arranged in the conduit (7) between the boiling apparatus (3) and the evaporating chamber (8). The pressure maintaining valve (9) serves to continuously maintain at least atmospheric pressure in the boiling apparatus (3) and negative pressure in the evaporating chamber (8). The method includes the steps of boiling an aqueous solution of substances under pressure which is at least atmospheric pressure, separating the aqueous solution of substances with respect to pressure, and evaporating the cooked solution of substances under negative pressure for at least a few seconds.

Abstract: A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.

Abstract: A system is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The system includes apparatus for loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature.

Abstract: The method of preparing an oxide superconducting wire comprises steps of preparing a wire by coating raw material powder for a Bi—Pb—Sr—Ca—Cu—O based oxide superconductor including a 2223 phase with a metal and heat treating the wire in a pressurized atmosphere containing oxygen in a prescribed partial pressure, and the total pressure of the pressurized atmosphere is at least 0.5 MPa. The pressure heat treatment apparatus comprises a pressure furnace storing and heat treating a target in a pressurized atmosphere, a pressure regulator for measuring the total pressure in the pressure furnace, an oxygen concentration meter for measuring the oxygen concentration in the pressure furnace and a controller for controlling the oxygen partial pressure in the pressure furnace in response to the total pressure measured by the pressure regulator and the oxygen concentration measured by the oxygen concentration meter.

Abstract: A method and apparatus for accelerated cooling of a furnace such as a furnace containing a susceptor. Cooling gases are split whereby a first percentage are provided to cool the furnace while a second percentage are provided to assist in cooling the heated cooling gases after cooling the furnace, whereby the percentages are changed throughout the process. The system further provides for unique cooling flow arrangement in the furnace which promotes maximum heat transfer through swirling.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: The method of preparing an oxide superconducting wire comprises steps of preparing a wire by coating raw material powder for a Bi—Pb—Sr—Ca—Cu—O based oxide superconductor including a 2223 phase with a metal and heat treating the wire in a pressurized atmosphere containing oxygen in a prescribed partial pressure, and the total pressure of the pressurized atmosphere is at least 0.5 MPa. The pressure heat treatment apparatus comprises a pressure furnace storing and heat treating a target in a pressurized atmosphere, a pressure regulator for measuring the total pressure in the pressure furnace, an oxygen concentration meter for measuring the oxygen concentration in the pressure furnace and a controller for controlling the oxygen partial pressure in the pressure furnace in response to the total pressure measured by the pressure regulator and the oxygen concentration measured by the oxygen concentration meter.

Abstract: A device in hot isostatic pressing has first, second and third pumps. The first pump is adapted to pump a cooled pressure medium emanating from a cooling loop in the pressure vessel upwardly from a first space to a second pump which is arranged in a second space located above the first space but below a load space. The second pump is arranged to pump a mixture of the cooled pressure medium and a warm pressure medium emanating from the second space upwardly through the load space. The third pump is arranged in the second space to pump a warm pressure medium emanating from this space to the second pump for pumping the warm pressure medium by the second pump.

Abstract: The present invention provides an apparatus for diffusing an impurity into a semiconductor wafer comprising: a diffusion furnace tubs which has a longitudinal center axis extending along a vertical direction and the diffusion tube having at least a gas injector vertically extending in a vicinity of an inner wall of the diffusion furnace tube and the gas injector having a single vertical alignment of a plurality of gas injection nozzles for blowing an impurity gas toward the longitudinal center axis in a first horizontal direction; and a wafer holder for holding at least one semiconductor wafer, the wafer holder being provided in the diffusion furnace tube so that the wafer holder rotates around a rotational axis extending along the vertical axis, whereby the at least one semiconductor wafer rotates around the rotational axis so as to keep a normal of the at least one semiconductor wafer directed in a diametrically outward direction from the rotational center axis.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: An unnecessary film is removed by cleaning gas flowing in a treatment vessel 8 for depositing a film on an object W to be processed such as a semiconductor wafer. In this case, the cleaning gas is preheated and activated by the gas heating mechanism 52 and the cleaning gas flows in the treatment vessel 8 in this state. By doing this, an unnecessary film in the treatment vessel made of quartz is removed effectively without damaging the treatment vessel.

Abstract: A purge chamber for providing a controlled atmosphere for the treatment of materials comprises a housing within which materials to be treated may be passed through and subjected to a cross-flow of purging gas entering and exiting through a multiplicity of inlets and outlets positioned along the length of the housing. Exiting gas may be recycled and re-entered in combination with fresh gas. In practice, materials to be treated may be conveyed through the chamber while the atmosphere surrounding the materials is continuously exchanged. Flapper doors, spanning the width of the chamber, are positioned along the path of travel of the materials being treated to direct the cross-flow of purging gas and prevent the entry of unwanted gases.

Abstract: An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.

Abstract: A hot walled, industrial, batch-type vacuum furnace constructed with a cylindrical furnace casing having a closed spherical end and an open end adapted to be closed by a sealable door. Furnace insulation is applied to the outside of the door and furnace casing so that the inside of the furnace is impervious to the furnace gases. Special mounting arrangements are used to seal furnace components extending into the casing as well as the door by elastomer seals which are air cooled.

Abstract: Discharge system for a reactor, such as a furnace. The discharge system comprises a collection duct, to which a number of discharge lines are connected, each discharge line in turn being coupled to an installation, such as a furnace. In order to keep the reduced pressure at the location of a furnace of this nature as constant as possible, it is proposed to provide a valve at the location of the reactor, which valve adjusts an opening between the discharge line and atmosphere in a controllable manner. In this way, a controlled reduced pressure can be maintained at the location of the valve, i.e. at the outlet from the reactor.

Abstract: An apparatus for manufacturing a semiconductor material includes a load-lock chamber which can contain a cassette for holding at least one wafer for taking the wafer into or out of the apparatus, a process furnace for conducting a treatment to the wafer, and a transfer chamber for transferring the wafer between the load-lock chamber and the process furnace, wherein the apparatus further includes a pressure detector for detecting a pressure difference between in the process furnace and in the transfer chamber, and a gas flow controller for controlling a flow rate of a gas flow supplied to the transfer chamber in accordance with results of detection by the pressure detector.

Abstract: A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.

Abstract: A non-mechanical leak proof coupling for use on a gas carrying pipe having two pipe sections which are moveable relative to each other. The coupling includes a first pipe section having an upstream end in flow communication with a stationary gas source and further includes a second pipe section having a downstream end in flow communication with a vibrating distribution chamber. A downstream end of the first pipe section and an upstream end of the second pipe section are disposed in closely spaced relation to define a gap therebetween. The first pipe section downstream end is in flow communication with the second pipe section upstream end such that the pressurized gas is communicated between the first pipe section to the second pipe section for discharge to the vibrating distribution chamber.

Abstract: The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.

Abstract: A dual-function scavenger system, especially useful in conjunction with ovens for processing semiconductor materials, wherein the spent process gases from the ovens are separated from their residual thermal energy for disposition through discrete channels. Back diffusion of atmospheric air into the ovens is minimized.

Abstract: A vacuum furnace method and apparatus including unique heat dissipation means and methods, including reduced area of the vacuum chamber extension, heat reflecting discs, and unique cooling methods, wherein the vacuum furnace is constructed and operated at a small fraction of the previously known vacuum furnace costs.

Abstract: A pneumatic isostatic forging process for densification of near net shape workpieces is disclosed. In the process, a workpiece is heated prior to the forging process, such as from a previous processing step. The workpiece is loaded into a pressure vessel. The pressure in the vessel is ramped to an operating pressure and held for approximately 10-120 seconds. The vessel is pressurized using rapid pressurization to achieve a high strain rate to assist in the final closure of voids within the workpiece, with the increase in the strain rate lowering the flow stress requirements for the workpiece, thereby making the workpiece more susceptible to plastic deformation.

Abstract: A furnace, for instance a reflow soldering oven, in which oxygen concentration is either directly or inferentially sensed within central processing and either one or both of the inlet and outlet sections of the furnace. Signals generated by these sensors are processed in a PID controller to generate a control signal to control the flow rate of inerting gas into the central processing section, thereby to at least inhibit ingress of air into the central processing section. The PID controller is programmed such that its integral error term is set equal to a time average of the oxygen concentrations of the central processing section less an oxygen concentration set point desired for the central processing section. The proportional and differential error terms are set equal to a time average of the concentrations of the central processing section and one or both of the inlet and outlet sections of the furnace less the oxygen concentration set point.