Abstract: Vertical field-effect transistor (VFET) devices and methods of forming the same are provided. The methods may include forming a lower structure on a substrate. The lower structure may include first and second VFETs, a preliminary isolation structure between the first and second VFETs, and a gate liner on opposing sides of the preliminary isolation structure and between the preliminary isolation structure and the substrate. Each of the first and second VFETs may include a bottom source/drain region, a channel region and a top source/drain region sequentially stacked, and a gate structure on a side surface of the channel region. The preliminary isolation structure may include a sacrificial layer and a gap capping layer sequentially stacked. The methods may also include forming a top capping layer on the lower structure and then forming a cavity between the first and second VFETs by removing the sacrificial layer.

Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method includes: generating the trench in the semiconductor substrate; generating an oxide layer over opposing sidewalls of the trench; damaging at least a portion of the oxide layer by ion implantation; coating the oxide layer with an etching mask; generating at least one opening in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth at the one of the opposing sidewalls by introducing an etching agent into the opening.

Abstract: A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.

Abstract: A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

Abstract: The semiconductor device includes a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and the barrier layer which are formed above a substrate, a gate electrode arranged within the groove through a gate insulating film, and a source electrode and a drain electrode which are formed above the barrier layer on both sides of the gate electrode. The n-type layer and the drain electrode are electrically coupled by a connection portion that reaches the n+ layer. The p-type layer and the source electrode are electrically coupled by a connection portion that reaches the p-type layer. A diode including a p-type layer and an n-type layer is provided between the source electrode and the drain electrode, to thereby prevent the breaking of an element caused by an avalanche breakdown.

Abstract: A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.

Abstract: A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure.

Abstract: A method for manufacturing a semiconductor device of the present invention includes steps of (a) preparing a silicon carbide substrate including a photoresist film formed on a principal surface, (b) dropping a first developing solution onto the photoresist film, (c) rotating the silicon carbide substrate to drain the first developing solution dropped onto the photoresist film after a lapse of a first development time since the end of the step (b), (d) dropping a second developing solution onto the photoresist film after the step (c), and (e) rotating the silicon carbide substrate to drain the second developing solution dropped onto the photoresist film after a lapse of a second development time since the end of the step (d).

Abstract: A semiconductor device and method of manufacturing the semiconductor device is disclosed in which the tradeoff relationship between the Eoff and the turning OFF dV/dt is improved at a low cost using a trench embedding method. The method comprises a step of forming a parallel pn layer that is a superjunction structure using a trench embedding method and a step of ion implantation into an upper part of an n type semiconductor layer, i.e., an n type column, forming a high concentration n type semiconductor region. This method improves the trade-off relationship between the Eoff and the turning OFF dV/dt as compared with a high concentration n type semiconductor region formed of an epitaxial layer. This method achieves shorter process time and lower cost in manufacturing because it eliminates the redundant repeating of steps performed in the conventional method of forming a superjunction structure through multi-stage epitaxial growth.

Abstract: A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.

Abstract: A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein the gate electrode includes a gate base portion on the gate insulating film and a gate umbrella portion, and a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure.

Abstract: A finFET with self-aligned punchthrough stopper and methods of manufacture are disclosed. The method includes forming spacers on sidewalls of a gate structure and fin structures of a finFET device. The method further includes forming a punchthrough stopper on exposed sidewalls of the fin structures, below the spacers. The method further includes diffusing dopants from the punchthrough stopper into the fin structures. The method further includes forming source and drain regions adjacent to the gate structure and fin structures.

Abstract: Provided are methods of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, forming a mask layer on the mold layer, etching the mold layer using the mask layer as an etch mask to form a channel hole penetrating the mold layer, shrinking the mask layer to provide a reduced mask layer, forming a spacer layer to cover the reduced mask layer, and forming a vertical channel to fill the channel hole and be electrically connected to the substrate. As a result, the channel hole can have an enlarged entrance.

Abstract: A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current.

Abstract: A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.

Abstract: An embodiment method of controlling threshold voltages in a fin field effect transistor (FinFET) includes forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate, removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material, applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over the hard mask of the dummy gate, etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin, and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin.

Abstract: For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an n++ cathode layer, an n? drift layer on the n++ cathode layer, a pair of p+ regions, an n+ channel region formed between the n? drift layer and the p+ region and sandwiched between the pair of p+ regions, n++ anode regions and an anode electrode formed on the n++ anode regions and the p+ regions.

Abstract: A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods comprising forming at least one IC device on a front surface of a semiconductor substrate. The at least one IC device includes at least one circuit block and at least one power switch circuit. A dielectric layer is deposited on the IC device, and first and second electromechanical power switches are formed on the dielectric layer. The first power switch gates a voltage to the circuit block and the second power switch gates the voltage to the IC device. The first power switch is actuated by the power switch circuit, and the voltage to the circuit block is switched off. Alternatively, the second power switch is actuated by the power switch circuit, and the voltage to the IC device is switched off.

Abstract: Provided are a method of forming a contact and a method of manufacturing a phase change memory device using the same. The method of forming a contact includes forming on a substrate an insulating layer pattern having first sidewalls extending in a first direction and second sidewalls extending in a second direction perpendicular to the first direction and which together delimit contact holes, forming semiconductor patterns in lower parts of the contact holes, forming isolation spacers on the semiconductor pattern and side surfaces of the first sidewalls to expose portions of the semiconductor patterns, and etching the exposed portions of the semiconductor patterns using the isolation spacers as a mask to divide the semiconductor patterns into a plurality of finer semiconductor patterns.

Abstract: A process for fabricating a tapered field plate dielectric for high-voltage semiconductor devices is disclosed. The process may include depositing a thin layer of oxide, depositing a polysilicon hard mask, depositing a resist layer and etching a trench area, performing deep silicon trench etch, and stripping the resist layer. The process may further include repeated steps of depositing a layer of oxide and anisotropic etching of the oxide to form a tapered wall within the trench. The process may further include depositing poly and performing further processing to form the semiconductor device.

Abstract: A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein the gate electrode includes a gate base portion on the gate insulating film and a gate umbrella portion, and a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure.

Abstract: The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

Abstract: A semiconductor power device integrated with ESD protection diode is disclosed by offering a dopant out-diffusion suppression layers prior to source dopant activation or diffusion to enhance ESD protection capability between gate and source.

Abstract: A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from semiconductor body areas (10) of a first conductivity type and are surrounded by a trench structure (5) on the upper face (6) of the semiconductor component. For this purpose the trench structure has a base (7) and a wall area (8) and is filled with a material (9) with a relatively high dielectric constant (?r). The base area (7) of the trench structure (5) is provided with a heavily doped semiconductor material (11) of the same conductivity type as the lightly doped semiconductor body areas (17), and/or having a metallically conductive material (12).

Abstract: A wide-band-gap reverse-blocking MOS-type semiconductor device includes a SiC n?-type drift layer; a p+-type substrate on the first major surface side of the drift layer; a trench extending through a p+-type substrate into the drift layer; a titanium electrode in the trench bottom that forms a Schottky junction with the SiC n?-type drift layer; an active section including a MOS-gate structure on the second major surface side of the drift layer facing to the area, in which the Schottky junctions are formed; a breakdown withstanding section surrounding the active section; and a trench isolation layer surrounding the breakdown withstanding section, the trench isolation layer extending from the second major surface of the drift layer into p+-type substrate and including insulator film buried therein. The device facilitates making a high current flow with a low ON-voltage and exhibits a very reliable reverse blocking capability.

Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.

Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

Abstract: A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.

Abstract: A vertical semiconductor device with improved junction profile and a method of manufacturing the same are provided. The vertical semiconductor device includes a pillar vertically extended from a surface of a semiconductor substrate, a silicon layer formed in a bit line contact region of one sidewall of the pillar, and a junction region formed within a portion of the pillar contacting with the silicon layer.

Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

Abstract: A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.

Abstract: A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semicond

Abstract: The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan.

Abstract: It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor.

Abstract: An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a passivation layer, each trench being substantially filled with a first conductive region a second conductive region and an insulating material having a dielectric constant similar to a dielectric constant of the silicon carbide substrate composition. The first conductive region is separated from the passivation layer by the insulating material. The first and second conductive regions form gate regions for each trench MOSFET. The first conductive region is separated from the second conductive region by the passivation layer. A doped body region of a first conductivity type formed at an upper portion of the substrate composition and a doped source region of a second conductivity type formed inside the doped body region.

Abstract: A semiconductor-device fabrication method includes forming a second semiconductor region of a second conductivity on a surface layer of a first semiconductor region of a first conductivity, the second semiconductor region having an impurity concentration higher than the first semiconductor region; forming a trench penetrating the second semiconductor region, to the first semiconductor region; embedding a first electrode inside the trench via an insulating film, at a height lower than a surface of the second semiconductor region; forming an interlayer insulating film inside the trench, covering the first electrode; leaving the interlayer insulating film on only a surface of the first electrode; removing the second semiconductor region such that the surface thereof is positioned lower than an interface between the first electrode and the interlayer insulating film; and forming a second electrode contacting the second semiconductor region and adjacent to the first electrode via the insulating film in the trench.

Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A semiconductor substrate is prepared. The semiconductor substrate has a first region and a second region other than the first region. A first mask is formed over the first region. The first mask has a first line-and-space pattern extending in a first direction. A first removing process is performed. The first removing process selectively removes the first region with the first mask to form a first groove extending in the first direction. The first removing process removes an upper part of the second region while a remaining part of the second region having a first surface facing upward. The bottom level of the first groove is higher than the level of the first surface.

Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first active pillars by etching a substrate using a hard mask layer as an etching barrier, forming a gate conductive layer surrounding sidewalls of the first active pillars and the hard mask layer, forming a word line conductive layer filling gaps defined by the gate conductive layer, forming word lines and vertical gates by simultaneously removing portions of the word line conductive layer and the gate conductive layer on the sidewalls of the hard mask layer, forming an inter-layer dielectric layer filling gaps formed by removing the word line conductive layer and the gate conductive layer, exposing surfaces of the first active pillars by removing the hard mask layer, and growing second active pillars over the first active pillars.

Abstract: It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor.

Abstract: A vertical channel transistor includes a plurality of active pillar patterns extending perpendicularly from the top surface of the substrate toward an upper part. A gate insulating layer is deposited on the side wall of the active pillar pattern and serves as an ion diffusion barrier between the pillar patterns and surrounding lower gate electrodes. The resultant pillar pattern structure is encapsulated with a metal. The resultant pillar pattern is surrounded on all sides by a specified height by a sacrificial layer of Spin-On Dielectric (SOD). The metal layer is etched-back to the height of the sacrificial layer, thus forming the lower gate electrodes. A spacer layer of an insulating mater is deposited surrounding the upper part of the pillar patterns and the sacrificial layer is removed exposing a part of the lower gate electrodes. The exposed gate electrode is etched to facilitate semiconductor integration.

Abstract: An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer (105), thereby forming a carbon-introduced layer.

Abstract: A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor base layer with an aperture partially exposing the principal plane; a nitride semiconductor multilayer structure portion, formed on a region extending onto the insulating layer from the aperture, having a parallel surface parallel to the principal plane of the semiconductor base layer as well as a +c-axis side first inclined surface and a ?c-axis side second inclined surface inclined with respect to the principal plane of the semiconductor base layer and including two types of group III nitride semiconductor layers at least having different lattice constants; a gate electrode formed to be opposed to the second inclined surface; a source electrode arranged to be electrically connected with the group III nitride semiconductor layers; and a drain ele

Abstract: A method for fabricating a vertical channel transistor includes forming a structure including a plurality of trimmed pillar patterns, forming a conductive layer for a gate electrode including a seam over a resultant structure with the pillar patterns, performing an etch-back process until the seam is exposed, and forming a gate electrode by etching the etch-backed conductive layer.

Abstract: Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.

Abstract: A FinFET semiconductor device has an active region formed of a semiconductor substrate and projecting from a surface of the substrate. A fin having a first projection and a second projection composed of the active region are arranged in parallel and at each side of a central trench formed in a central portion of the active region. Upper surfaces and side surfaces of the first projection and the second projection comprise a channel region. A channel ion implantation layer is provided at a bottom of the central trench and at a lower portion of the fin. A gate oxide layer is provided on the fin. A gate electrode is provided on the gate oxide layer. A source region and a drain region are provided in the active region at sides of the gate electrode. A method of forming such a device is also provided.

Abstract: A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the semiconductor layer in such a manner that the semiconductor layer is divided into a source region and a drain region. The recess has a bottom defined by the main surface of the substrate and a side wall defined by the semiconductor layer. The channel layer has an impurity concentration lower than an impurity concentration of the semiconductor layer. The channel layer is formed on the bottom and the side wall of the recess by epitaxial growth.

Abstract: An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.