Abstract: A method for manufacturing an optoelectronic module is proposed. The method comprises the following steps: providing a top cover with a reflective surface. Then, a light-guiding structure is formed. A mounting device is provided. Next, an optoelectronic device is formed on the mounting device with a first precision. A control chip is formed on the mounting device with a second precision different from the first precision. The top cover combines with the mounting device, wherein the light-guiding structure is between the top cover and the mounting device, and the optoelectronic device faces the reflective surface.

Abstract: Solid state light emitting devices include one or more light affecting elements (e.g., of one or more light-transmissive, light-absorptive, light-reflective, and/or lumiphoric materials) formed on, over, or around at least one solid state light emitter, with the light affecting elements including multiple fused elements embodying plurality of dots, rods, or layers such as may be formed by three-dimensional (3D) printing. At least one electrically conductive path in electrical communication with a solid state light emitter may be formed by selective material deposition such as 3D printing. Light affecting elements may be individually tailored to individual solid state light emitters, such as to yield different optical distributions for interactions between each specific emitter and its corresponding light affecting element.

Abstract: In a light emitting element, a semiconductor layer including a light emitting layer is stacked on a GaN substrate 11, and a surface of the GaN substrate 11 opposite to the stacked semiconductor layer serves as a main light emission surface S. At the main light emission surface S, quadrangular pyramid shaped protrusions 11a which are continuously arranged and whose standing direction F2 is displaced from a stacking direction of the semiconductor layer are formed. In each protrusion 11a, fine asperities are, by etching, preferably formed at least at an inclined surface having a small inclination angle. Moreover, each protrusion 11a may be in a truncated shape, but is preferably formed in a pointed shape.

Abstract: A light emitting apparatus includes a translucent substrate, and a light emitting section and an optical filter section arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The light emitting section has a laminate structure that includes, on the first surface of the substrate, a dielectric multilayer film, a first electrode, a functional layer with a light emitting layer, and a second electrode having semi-transmissive reflectivity. The optical filter section has a laminate structure that includes, on the first surface of the substrate, the dielectric multilayer film, the functional layer, and the second electrode. The dielectric multilayer film and the functional layer extend over the first region.

Abstract: A light emitting device has a substrate including a pair of connection terminals at least on a first main surface of the substrate a light emitting element connected to the connection terminals by a molten material, and a light reflecting member covering the light emitting element, at least one of the connection terminals including a protruding portion configured to project from a first main surface of the connection terminal at a region which is connected with the light emitting element, the protruding portion and the molten material being embedded into the light reflecting member.

Abstract: The present invention relates to a display device, and a manufacturing method thereof. The display device includes a first insulation substrate; gate lines and data lines positioned on the first insulating substrate. The gate lines and data lines are insulated from each other and crossed each other. A first passivation layer positioned on the gate lines and the data lines, and including a first contact opening. A color filter positioned on the first passivation layer, and including an opening. An organic insulation layer positioned on the color filter, and including a contact hole, in which the first contact opening is larger than the opening. The organic insulation layer covers the color filter and the contact opening.

Abstract: A white light emitting LED device comprises: base, blue light LED chips, light reflector and transparent substrate covered with a phosphor coating; two ends of the light reflector connect the base and the transparent substrate, respectively, the inner surface of the light reflector is covered with a light-reflecting coating; blue light LED chips are set on the surface of the base pointing to the transparent substrate, and the electrode leads of blue light LED chips pass through the base; blue light LED chip is a single chip, or a group of chips connected in series, or in parallel, or in a mixed manner; the transparent substrate has the shape of a plane, or a convex, or a semi-cylinder. The present invention gets the white light by utilizing the blue lights emitted by the blue light LED chips to irradiate the transparent substrate which is covered with a phosphor coating.

Abstract: An organic light emitting diode display includes a substrate, a first electrode and an assistance electrode disposed on the substrate and separated from each other, an organic emission layer disposed on the first electrode, a contact hole which exposes the assistance electrode and is defined in the organic emission layer, and a second electrode disposed on the organic emission layer and electrically connected to the assistance electrode through the contact hole.

Abstract: An organic light-emitting display apparatus includes a display substrate, a display panel on the display substrate and including a pixel region including an organic light-emitting device (OLED), and a non-pixel region, and an encapsulation substrate for encapsulating the display panel, wherein the encapsulation substrate defines at least one groove therein in which a color filer is located.

Abstract: The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract: An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.

Abstract: A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

Abstract: A display apparatus includes a first insulating substrate including a front surface that provides an image and a rear surface opposite to the front surface, a low reflection layer provided on the rear surface, a gate wiring part provided on the low reflection layer, a data wiring part provided on the rear surface, the data wiring part that is insulated from the gate wiring part; and a pixel which is connected to the data wiring part and displays the image, where the low reflection layer includes a polymer resin having a black color.

Abstract: A method of manufacturing an organic light-emitting diode (OLED) display is disclosed. In one aspect, the method includes forming a color filter on a thin film transistor substrate, forming an organic planarization layer on the color filter, and performing a vacuum heat-treatment on the color filter and organic planarization layer. The method also includes forming a first electrode on the organic planarization layer, forming an organic light-emitting layer on the first electrode, and forming a second electrode on the organic light-emitting layer. The vacuum heat-treatment is performed at a temperature in the range of about 150° C. to about 300° C. under a pressure substantially equal to or lower than about 10?3 Torr before the organic light-emitting layer is formed.

Abstract: Disclosed are an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes: a driving switching element; a pixel electrode connected with the driving switching element; an auxiliary electrode separated from the pixel electrode and positioned in a same layer as the pixel electrode; an organic common layer positioned on the pixel electrode and the auxiliary electrode and including a contact hole positioned on the auxiliary electrode; and a common electrode positioned on the organic common layer and connected with the auxiliary electrode through the contact hole; and the auxiliary electrode includes a light absorbing layer.

Abstract: The present invention provides a liquid crystal panel and a method for manufacturing the same. The liquid crystal panel comprises a color filter substrate including a first testing point of a common electrode thereon; and a thin film transistor substrate including a second testing point thereon for testing circuits of the color filter substrate, and a switching unit is arranged between the second testing point and the first testing point, and enables the circuit connection between the second testing point and the first testing point to be in a disconnected state when the potential of the second testing point is abnormal. In this manner, the potential of the first testing point inside the color filter substrate may be prevented from interfere as well as a phenomenon of picture display abnormality of the liquid crystal panel due to short in the testing points.

Abstract: The invention relates to a radiation-emitting, organic component comprising a radiation-permeable carrier body (1) having a first surface (1a) on a top side of the carrier body (1), a radiation-permeable, structured layer (2) that is arranged on the first surface (1a) and covers same at least in places, a radiation-permeable first electrode (3) that is arranged on the side of the structured layer (2) facing away from the carrier body (1), a layer stack (10) that is arranged on the side of the first electrode (3) facing away from the structured layer (2) and comprises an organic, active region, and a second electrode (6), wherein the active region (10a) can be electrically contacted via the first electrode (3) and the second electrode (6), the structured layer (2) is different from the radiation-permeable carrier body (1), and the structured layer (2) comprises structures (2a) for refracting and/or scattering electromagnetic radiation generated in the active region (100) during operation.

Abstract: Disclosed are a light-emitting diode having improved light extraction efficiency and a method for manufacturing same. This light-emitting diode includes: a gallium nitride substrate having an upper surface and a lower surface; and a gallium nitride semiconductor multilayer structure disposed on the lower surface of the substrate, and having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Herein, the gallium nitride substrate has a main pattern having a protruding portion and a concave portion on the upper surface, and a rough surface formed on the protruding portion of the main pattern. The light-emitting diode is capable of improving light extraction efficiency through the upper surface thereof since the rough surface is formed along with the main pattern on the upper surface of the gallium nitride substrate.

Abstract: A donor substrate includes: a support layer; a first light absorption layer disposed on the support layer; a buffer layer disposed on the first absorption layer; a second light absorption layer disposed on the buffer layer; and a transfer layer disposed on the second absorption layer, wherein the buffer layer includes a transparent oxide film.

Abstract: The invention relates to a light-emitting diode comprising a body (1) which consists at least partly of a semiconductor material. The body (1) has an active layer (2), in which light can be generated, and at least one exit face (3) from which the light that is generated in the active layer (2) can exit. A plurality of structures (5) is provided in the body (1), and at least some of the light exiting the active layer (2) can be scattered at said structures before reaching the exit face (3).

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: An organic EL panel includes reflective electrodes, a transparent electrode, organic light-emitting layers, and functional layers that are each provided between a corresponding one of the reflective electrodes and a corresponding one of the respective organic light-emitting layers. The film thicknesses of the respective functional layers of R, G, and B colors are each 60 nm or less such that a local maximum of light-emitting efficiency for a corresponding color is exhibited, and are substantially equal to each other. The optical distances between the respective organic light-emitting layers of the R, G, and B colors and the respective reflective electrodes are each 100 nm or less, and are substantially equal to each other.

Abstract: A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.

Abstract: A method for manufacturing an LED (light emitting diode) with transparent ceramic is provided, which includes: adding quantitative fluorescent powder into transparent ceramic powder, wherein the doped ratio of the fluorescent powder is 0.01-100 wt %; preparing the fluorescent transparent ceramic using ceramic apparatus and process, after fully mixing the raw material; assembling the prepared fluorescent transparent ceramic and a semiconductor chip to form the LED device. The method assembles the fluorescent transparent ceramic and a semiconductor chip to form the LED device by replacing the fluorescent powder layer and the epoxy resin package casting of the traditional LED with fluorescent transparent ceramic. The fluorescent transparent ceramic is used as the package cast and fluorescent material, and the LED device manufactured through the method has more excellent performance.

Abstract: A light emitting device 1 according to an embodiment includes a planar alumina substrate, a semiconductor light-emitting element mounted on the alumina substrate, and a phosphor layer. The phosphor layer includes a silicone resin layer provided to cover an upper surface and a side surface of the semiconductor light-emitting element and a phosphor emitting visible light by being excited with light emitted from the semiconductor light-emitting element. The phosphor is dispersed in the silicone resin layer. The alumina substrate has a water absorption rate of 5% or more and 60% or less, and an adhesion strength between the alumina substrate and the silicone resin layer is 1 N or more.

Abstract: The invention is directed towards methods and compositions for identifying the amount of ammonium acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of ammonium acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of ammonium acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the ammonium acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract: A light-receiving device of the present disclosure includes a light-trapping sheet, and a photoelectric conversion section optically coupled thereto. The light-trapping sheet includes: a light-transmitting sheet; and a plurality of light-coupling structures arranged in an inner portion of the light-transmitting sheet. The light-coupling structure includes first, second and third light-transmitting layers. A refractive index of the first and second light-transmitting layers is smaller than that of the light-transmitting sheet; and a refractive index of the third light-transmitting layer is larger than those of the first and second light-transmitting layers. The third light-transmitting layer has a diffraction grating parallel to the light-transmitting sheet. At least a part of the photoelectric conversion section is located along an outer edge of at least one of the surfaces of the light-transmitting sheet.

Abstract: There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element.

Abstract: A two-stage singulation process is used in the fabrication of phosphor coated light emitting elements. Prior to the application of the phosphor coating, the individual light emitting elements are singulated using a laser dicing process (130); after application of the phosphor coating (150), the phosphor coated light emitting elements are singulated using a mechanical dicing process (180). Before laser dicing of the light emitting elements, the wafer is positioned on a piece of dicing- or die-attach-tape held by a frame; after laser dicing, the tape is stretched (140) to provide space between the individual light emitting elements that allows for the wider kerf width of the subsequent mechanical dicing (180) after application of the phosphor coating (150).

Abstract: Provided are an electronic device and a fabrication method thereof. The electronic device according to the concept of the present invention includes auxiliary interconnections disposed on a substrate, a light extraction layer that is provided on the substrate and fills between the auxiliary interconnection, and a first electrode provided on the auxiliary interconnections and the light extraction layer, wherein the light extraction layer may have a first surface facing the substrate and a second surface opposite to the first surface, the first surface may have protrusions, and the auxiliary interconnections may include a material having a lower resistance than the first electrode. Since electrical properties of the electronic device are improved, uniform light emission characteristics may be realized.

Abstract: Provided is a method of manufacturing an organic light emitting diode. The method of manufacturing an organic light emitting diode includes forming a light scattering layer on a substrate, forming a metal mask layer on the light scattering layer, forming a metal mask pattern by performing a heat treatment process on the metal mask layer, forming a nano structure by pattering the light scattering layer by using the metal mask pattern as an etching mask, and forming a planarizing layer to cover the nano structure on the substrate, wherein the heat treatment process is performed at temperature of about 80° C. to about 200° C.

Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector.

Abstract: An OLED device includes a transparent anode, of sheet resistance R1, and a cathode, of sheet resistance R2, the ratio r=R2/R1 ranging from 0.01 to 2.5, a first anode electrical contact, a first cathode electrical contact, arranged above the active zone, and a reflector covering the active zone above an OLED system, and for each point B of the anode contact, the point B being in an edge of the first anodic region, on defining a distance D between B and the point C closest to the point B, and on defining a distance L between the point B and a point X of an opposite edge of the first anodic region from the first edge, and passing through Ci the following criteria are defined: if 0.01?r<0.1, then 30%<D/L<48%, if 0.1?r<0.5, then 10%<D/L<45%, if 0.5?r<1, then 10%<D/L<45%, if 1?r<1.5, then 5%<D/L<35%, if 1.5?r<2.5, then 5%<D/L<30%.

Abstract: An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.

Abstract: To improve light extraction efficiency of light emitting elements such as electroluminescent elements. A first electrode 101, a light emitting layer 102, and a second electrode 103 are formed over a substrate 100, which partially constitute a light emitting element. Light produced in the light emitting layer 102 is emitted out through the second electrode 103. A plurality of three-dimensional bodies 104 are provided in contact with a surface of the second electrode 103. With the provision of the bodies 104, light totally reflected between the second electrode 103 and the air enters the bodies 104 and can be emitted through faces of the bodies 104 that are not parallel to the interface between the bodies and the second electrode 103.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: A semiconductor lighting device may include a substrate populated with at least one semiconductor light source, wherein at least one reflective surface region of the substrate is covered with a light-reflecting layer, and wherein the light-reflecting layer has an aluminum carrier coated in a reflection-intensifying manner.

Abstract: A donor substrate for transfer and a manufacturing method of an organic light emitting diode (OLED) display, the donor substrate including a transparent support layer; a light-to-heat conversion layer on one side of the support layer, the light to heat conversion layer being in the form of a first pattern; a transfer layer covering the light-to-heat conversion layer; and a reflection layer on another side of the support layer, the other side being opposite to the one side of the support layer, the reflection layer being in the form of a second pattern.

Abstract: A light source assembly includes a base substrate, a resin layer disposed on the base substrate, and exposing a portion of the base substrate, and a first light source disposed on the portion of the base substrate which is exposed by the resin layer. The first light source has a hexahedron shape. The first light source has a face in parallel with the base substrate and having a height smaller than length or width of the face.

Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

Abstract: The present invention addresses the problem of providing an LED device having no color unevenness in light emission. In order to solve the problem, this LED device manufacturing method includes: a step of providing an LED chip-mounted package; a step of film-forming a fluorescent material layer by applying a fluorescent material-dispersed solution to a emission surface of the LED chip, said fluorescent material-dispersed solution containing a solvent, a fluorescent material, clay minerals and porous inorganic particles, and by drying the fluorescent material-dispersed solution; and a step of film-forming a wavelength conversion section by applying, to the fluorescent material layer, a precursor solution having a precursor of a light transmissive ceramic dispersed in a solvent, and by firing the layer, said wavelength conversion section being composed of a light transmissive ceramic layer having the fluorescent material, the clay minerals and the porous inorganic particles dispersed therein.

Abstract: There is provided a light emitting device including a light emitting element, a covering member for covering a side surface of the light emitting element, and a light-transmissive member disposed on upper surfaces in a light emitting direction of the light emitting element and the covering member and having an end face on substantially the same plane as an end face of the covering member, wherein the covering member has a recess portion or a convex portion on the upper surface, a light emitting surface of the light emitting element and an upper surface other than the recess portion or the convex portion of the covering member are arranged on substantially the same plane, and the light-transmissive member is provided in contact with the recess portion or the convex portion.

Abstract: Provided are a substrate for an organic electronic device, and the like. The substrate for an organic electronic device having a functional layer which may improve a function such as light extraction efficiency of an organic electronic system such as organic light emitting device and stability of the device due to excellent cohesive strength to the substrate may be provided. An organic electronic system including the substrate and a use thereof may also be provided.

Abstract: Optical components and devices are provided that include a substrate, a microlens array, and a barrier film system conformally covering the microlens array. An OLED may be optically coupled to the microlens array. The barrier film may provide protection to the microlens array or other components, without having a significant negative impact on outcoupling of light from the coupled OLED by the microlens array.

Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Abstract: A process for manufacturing a liquid crystal display panel, a display device and a monochromatic quantum dot layer are disclosed; in the liquid crystal display panel, a plurality of pixel units are defined on the liquid crystal display panel, each pixel unit having sub-pixel units displaying different colors, at a position of the apposing substrate or the array substrate corresponding to a sub-pixel unit of at least one color in each pixel unit, a monochromatic quantum dot layer is disposed. Dispersing of monochromatic quantum dots with a macromolecular polymer network can prevent the quantum dots from aggregation and increase the quantum yield of the quantum dots, so as to increase the light efficacy of quantum excitation, as well as avoiding the contact between the monochromatic quantum dots with oxygen and increasing the life of quantum dots.

Abstract: The present invention provides manufacturing methods of an LED and a light emitting device. The manufacturing method of the LED includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a lens structure covering the second electrode; coating the lens structure with fluorescent powder; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.

Abstract: For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

Abstract: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.