Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

Abstract: To provide a planar lightwave circuit capable of being optically connected to a semiconductor optical element or an optical wiring component in a simple, precise, and stable manner without an increase in circuit footprint or the number of fabrication steps or a deterioration of characteristics. By arranging a dummy optical waveguide having a mirror function in the vicinity of an input/output waveguide of an optical functional circuit forming the planar lightwave circuit, a semiconductor optical element or an optical wiring component can be easily aligned with and fixed to the optical functional circuit by monitoring the reflection light intensity from the dummy optical waveguide. When the optical functional circuit has a plurality of input/output waveguides to be optically connected, each input/output waveguide can be identified if the dummy optical waveguides having the mirror function have different reflection properties (such as reflectance, width, position, or reflection wavelength).

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: The present invention discloses a tunable semiconductor laser based on half-wave coupled partial reflectors. The laser comprises two resonant cavities; one resonant cavity is mainly composed of an optical waveguide, a first partial reflector and a second partial reflector, and the other resonant cavity is mainly composed of an optical waveguide, a first partial reflector and a second partial reflector. The resonant cavities are arranged along the same straight line and coupled to each other, and the two second partial reflectors in the two resonant cavities are connected by a common coupling waveguide. The present invention has the best single-mode selection, and an emitted wavelength can be switched between a series of channels; an optical grating needs not to be manufactured, and the structure is simple; and the laser has a high degree of freedom in coupler design and a great manufacturing tolerance and can realize large-scale digital tuning.

Abstract: Solid oxide fuel cells that include an alumina substrate as support are described. The alumina substrate supported SOFCs can exhibit desirable electrochemical characteristics including high performance at intermediate temperatures and excellent thermal stability. The alumina substrate support is formed according to a modified phase-inversion process that forms a series of aligned micro-channels extending from a first side to a second opposite side of the support enabling gas distribution between an electrode (e.g., an anode) located on one side of the alumina substrate and the other, opposite side of the alumina substrate.

Abstract: A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension.

Abstract: A planar optical waveguide based on two-dimensional grating includes an optical waveguide substrate which is a transparent plane-parallel plate, and a functional grating element which includes a two-dimensional grating having two grating directions with an angle of 60° in between. The two-dimensional grating is either protruded or recessed into the top surface of the optical waveguide substrate. The output image from a micro-projector can enter the optical waveguide and then gets projected to cover the entire area of the functional grating element, enabling a human eye to view the output image across a large eye-box.

Abstract: The present invention inexpensively provides an electrode material for a fuel electrode, the electrode material having CO2 resistance and being capable of forming a fuel cell having high electricity generation performance. An electrode material for a fuel electrode, the electrode material constituting a fuel electrode of a fuel cell including a proton-conductive solid electrolyte layer, includes a perovskite-type solid electrolyte component and a nickel (Ni) catalyst component, in which the solid electrolyte component includes a barium component, a zirconium component, a cerium component, and a yttrium component, and the mixture ratio of the zirconium component to the cerium component in the solid electrolyte component is set to be 1:7 to 7:1 in terms of molar ratio.

Abstract: An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: A top emitting VCSEL array may be coupled to a separate heat spreading superstrate that may be positioned above the apertures of the array and that may be able to transmit the emitted beams through the heat spreading superstrate. The VCSEL devices in the array may be controlled by an electrical connection to a pattern of conductive elements positioned in close contact with, but electrically isolated from, the heat spreading superstrate. The conductive elements may electrically control one or more of the VCSEL devices to enable sectional control of the light output. The elements may also be arraigned in a ground-signal-ground or coplanar waveguide configuration to improve the frequency response of the array.

Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.

Abstract: A method and a device are provided for diffracting incident light from a lithographic scanner in an IC process flow. Embodiments include forming a diffraction grating in a first layer on a semiconductor substrate; and forming a plurality of lithographic alignment marks in a second layer, overlying the first layer, wherein the diffraction grating has a width and a length greater than or equal to a width and length, respectively, of the plurality of lithographic alignment marks.

Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.

Abstract: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.

Abstract: According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.

Abstract: A method for manufacturing an organic electroluminescent element including, in the following order, an anode, a light-emitting layer, an electron injection layer, and a cathode, the method including the steps of: (A) forming the anode; (B) forming the light-emitting layer; (C) forming the electron injection layer; and (D) forming the cathode, in which the step (C) includes (i) applying an application liquid containing an ionic polymer to form a thin film, (ii) heating the thin film formed, (iii) storing a partially finished organic electroluminescent element obtained in (ii), and thereafter, (iv) heating the thin film again.

Abstract: A method for producing an optoelectronic assembly (12) is provided, in which an optoelectronic component (16) is arranged on a carrier (14). Electrical terminals of the optoelectronic component (16) are electrically coupled to electrical contacts of the carrier (14) corresponding thereto. A dummy body (20) is arranged on a first side of the optoelectronic component (16) facing away from the carrier (14). A potting material (22) is arranged on the carrier (14), which potting material at least partially encloses the optoelectronic component (16) and at least partially encloses the dummy body (20). The dummy body (20) is removed, after the potting material (22) is dimensionally stable, whereby a recess (23) results, which is at least partially enclosed by the dimensionally stable potting material (22). An optically functional material (24) is decanted into the recess (23).

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

Abstract: The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

Abstract: A method for manufacturing a semiconductor optical device includes the steps of preparing a mold having an imprint pattern; forming a substrate product including a semiconductor layer; forming a first resin layer on the semiconductor layer; forming a diffraction grating pattern having periodic projections and recesses in the first resin layer using the mold, the projection of the diffraction grating pattern having a top portion and a base portion; changing a duty ratio of the diffraction grating pattern by dry-etching the first resin layer; forming a second resin layer on the first resin layer so as to cover the projection and the recess; removing the top portion by etching back the first and second resin layers; and selectively etching the first resin layer so as to have a reverse pattern to the diffraction grating pattern; and etching the semiconductor layer through the first resin layer.

Abstract: A tunable laser with multiple in-line sections including sampled gratings generally includes a semiconductor laser body with a plurality of in-line laser sections configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. Sampled gratings in the respective in-line sections have the same grating period and a different sampling period to produce the different wavelengths. The wavelength of the light generated in the respective laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. By selectively generating light in one or more of the laser sections, one or more channel wavelengths may be selected for lasing and transmission. By using sampled gratings with the same grating period in the multiple in-line sections, the multiple section tunable laser may be fabricated more easily.

Abstract: The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

Abstract: The present invention provides templating methods for replicating patterned metal films from a template substrate such as for use in plasmonic devices and metamaterials. Advantageously, the template substrate is reusable and can provide plural copies of the structure of the template substrate. Because high-quality substrates that are inherently smooth and flat are available, patterned metal films in accordance with the present invention can advantageously provide surfaces that replicate the surface characteristics of the template substrate both in the patterned regions and in the unpatterned regions.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: An integrated grating element system includes a first transparent layer formed on an optoelectronic substrate layer which includes at least two optoelectronic components, a first grating layer disposed on the first transparent layer which includes at least two sub-wavelength grating elements formed therein aligned with active regions of the optoelectronic components, and a second grating layer placed at a distance from the first grating layer such that light propagates between a diffraction grating element formed within the second grating layer and the at least two sub-wavelength grating elements.

Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

Abstract: Methodologies and an apparatus enabling a selection of design rules to improve a density of features of an IC design are disclosed. Embodiments include: determining a feature overlapping a grating pattern of an IC design, the grating pattern including a plurality of grating structures; determining a shape of a cut pattern overlapping the grating pattern; and selecting one of a plurality of rules for the feature based on the determined shape.

Abstract: A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A first electrode and a second electrode are formed to electrically connect with the first semiconductor layer and the second semiconductor pre-layer respectively. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures are formed on the second semiconductor pre-layer and the patterned mask layer is removed. A method for making an optical element is also provided.

Abstract: A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.

Abstract: Novel processing methods for production of high-refractive index contrast and low loss optical waveguides are disclosed. In one embodiment, a “channel” waveguide is produced by first depositing a lower cladding material layer with a low refractive index on a base substrate, a refractory metal layer, and a top diffusion barrier layer. Then, a trench is formed with an open surface to the refractory metal layer. The open surface is subsequently oxidized to form an oxidized refractory metal region, and the top diffusion barrier layer and the non-oxidized refractory metal region are removed. Then, a low-refractive-index top cladding layer is deposited on this waveguide structure to encapsulate the oxidized refractory metal region. In another embodiment, a “ridge” waveguide is produced by using similar process steps with an added step of depositing a high-refractive-index material layer and an optional optically-transparent layer.

Abstract: A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member.

Abstract: A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°.

Abstract: An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch.

Abstract: Provided is a method of fabricating an organic light emitting device that may form a light scattering layer having an irregular random structure at a low temperature. The method includes providing a substrate coated with a precursor layer; sequentially forming a metal layer and an organic layer on the precursor layer; performing a heat treatment of the organic layer to form an organic mask from the organic layer; patterning the metal layer by using the organic mask to form a metal mask; patterning the precursor layer by using the metal mask to form a light scattering layer having an irregular random structure; removing the metal mask and the organic mask; and sequentially stacking a planarization layer, a first electrode, an organic light emitting layer, a second electrode, and a passivation layer on the light scattering layer.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: An electroluminescent device, comprising: a substrate; a first electrode and a second electrode disposed on the substrate; and an electroluminescent layer sandwiched between the first electrode and the second electrode, wherein at least one of the first and second electrodes is configured to have a grating structure; and wherein the grating structure has a grating period within a range of 0.9˜1.1 times of a wavelength of a light wave generated in the electroluminescent layer.

Abstract: A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper 201 having a second groove pattern P2; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist film 304 on a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist film 304 by air pressure to form a third groove pattern P3 on the resist film 304; and a step of etching the wafer with the resist film 304 serving as a mask to form a diffraction grating on a surface of the wafer.

Abstract: A method for manufacturing a semiconductor optical device includes the steps of preparing a mold having an imprint pattern; forming a substrate product including a semiconductor layer; forming a first resin layer on the semiconductor layer; forming a diffraction grating pattern having periodic projections and recesses in the first resin layer using the mold, the projection of the diffraction grating pattern having a top portion and a base portion; changing a duty ratio of the diffraction grating pattern by dry-etching the first resin layer; forming a second resin layer on the first resin layer so as to cover the projection and the recess; removing the top portion by etching back the first and second resin layers; and selectively etching the first resin layer so as to have a reverse pattern to the diffraction grating pattern; and etching the semiconductor layer through the first resin layer.

Abstract: Forming an adhesive layer on a part of a surface of the flexible substrate; forming a magnetic material layer on the surface of the flexible substrate in a part other than the part on which the adhesive layer is formed; temporarily holding, using magnetic force, the flexible substrate on which the adhesive layer and the magnetic material layer are formed, above an inflexible substrate having magnetic property; fixing the flexible substrate with the inflexible substrate via the adhesive layer; forming a layer composing an organic EL unit on the flexible substrate temporarily held using the magnetic force and fixed via the adhesive layer; removing the part in which the flexible substrate and the inflexible substrate are fixed via the adhesive layer; separating the flexible substrate from the inflexible substrate; and separating the magnetic material layer from the flexible substrate separated from the inflexible substrate are included.

Abstract: A light extracting member for an organic electroluminescent element, to be provided on a side for extracting light emitted by the organic electroluminescent element, wherein a light extracting surface of the member has a concave-convex structure which is configured such that when comparing an intensity of light that enters the member and is output from the light extracting surface with an intensity of light that is output from a flat light extracting surface of a virtual member, a frontal intensity and an integrated intensity of the former are each greater by a factor of 1.3 or more.

Abstract: A light emitting device includes a number of light emitting diode dies (LEDs) mounted on a shared submount and covered with a single lens element that includes a corresponding number of lens elements. The LEDs are separated from each other by a distance that is sufficient for lens element to include separate lens elements for each LED. The separation of the LEDs and lens elements may be configured to produce a desired amount of light on a target at a predefined distance. In one embodiment, the lens elements are approximately flat type lens elements, such as Fresnel, TIR, diffractive lens, photonic crystal type lenses, prism, or reflective lens.

Abstract: A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer having an upper part covering top ends of the protrusions; forming a distributed bragg reflective layer on the un-doped GaN layer until the distributed bragg reflective layer totally covering the protrusions and the un-doped GaN layer; etching the distributed bragg reflective layer and the upper part of the un-doped GaN layer to expose the top ends of the protrusions; and forming an n-type GaN layer, an active layer, and a p-type GaN layer sequentially on the top ends of the protrusions and the distributed bragg reflective layer. An LED chip formed by the method described above is also provided.

Abstract: Fine asperities are simply formed in the surface of a light emission surface to improve an luminous efficiency of a light emitting element. An LED element 10 is prepared as an example of a luminous body, and a thermally deformable heat mode recording material layer 12 is formed in the light emission surface 18 of the LED element 10. The recording material layer 12 is then illuminated with condensed light so that a plurality of recessed portions 15 are formed at a pitch of 0.01-100 times a center wavelength of the light emitted from the LED element 10.

Abstract: A display device provided with an MEMS light valve, comprising: a substrate, a fixed grating located on the substrate, an MEMS light valve for controlling the opening and closing of the fixed grating; a guide is disposed on the substrate. The MEMS light valve comprises: a movable grating, a movable electrode and fixed electrodes; the moveable grating is located in the guide and is electrically connected to the guide when contacting the guide; one end of the movable electrode is fixedly connected with the movable grating, and the other end is suspended; and the fixed electrodes and the movable electrode form a capacitor. When a potential difference forms between the fixed electrodes and the movable electrode, the movable electrode drives the movable grating to move in the guide, thereby opening and closing the fixed grating. Therefore, the MEMS light valve sensitivity can be enhanced and reliability is improved.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.